Chemical Vapor Deposition of an Organic Magnet, Vanadium Tetracyanoethylene

Recent progress in the field of organic materials has yielded devices such as organic light emitting diodes (OLEDs) which have advantages not found in ...

The Ohio State University

A demultiplexer is an electronic circuit designed to separate two or more combined signals. We report on a demultiplexer architecture for bridging from the submicrometer dimensions of lithographic patterning to the nanometer-scale dimensions that can be achieved through nanofabrication methods for the selective addressing of ultrahigh-density nanowire circuits. Order log2(N) large wires are required to address N nanowires, and the demultiplexer architecture is tolerant of low-precision manufacturing. This concept is experimentally demonstrated on submicrometer wires and on an array of 150 silicon nanowires patterned at nanowire widths of 13 nanometers and a pitch of 34 nanometers.

Bridging dimensions: demultiplexing ultrahigh-density nanowire circuits.

We describe our research into building integrated molecular electronics circuitry for a diverse set of functions, and with a focus on the fundamental scientific issues that surround this project. In particular, we discuss experiments aimed at understanding the function of bistable rotaxane molecular electronic switches by correlating the switching kinetics and ground state thermodynamic properties of those switches in various environments, ranging from the solution phase to a Langmuir monolayer of the switching molecules sandwiched between two electrodes. We discuss various devices, low bit-density memory circuits, and ultra-high density memory circuits that utilize the electrochemical switching characteristics of these molecules in conjunction with novel patterning methods. We also discuss interconnect schemes that are capable of bridging the micrometre to submicrometre length scales of conventional patterning approaches to the near-molecular length scales of the ultra-dense memory circuits. Finally, we discuss some of the challenges associated with fabricated ultra-dense molecular electronic integrated circuits.

Spiers Memorial Lecture. Molecular mechanics and molecular electronics.

High density metal cross bars at 17 nm half-pitch were fabricated by nanoimprint lithography. Utilizing the superlattice nanowire pattern transfer technique, a 300-layer GaAs/AlGaAs superlattice was employed to produce an array of 150 Si nanowires (15 nm wide at 34 nm pitch) as an imprinting mold. A successful reproduction of the Si nanowire pattern was demonstrated. Furthermore, a cross-bar platinum nanowire array with a cell density of approximately 100 Gbit/cm(2) was fabricated by two consecutive imprinting processes.

Circuit fabrication at 17 nm half-pitch by nanoimprint lithography.

The primary metric for gauging progress in the various semiconductor integrated circuit technologies is the spacing, or pitch, between the most closely spaced wires within a dynamic random access memory (DRAM) circuit. Modern DRAM circuits have 140 nm pitch wires and a memory cell size of 0.0408 mum(2). Improving integrated circuit technology will require that these dimensions decrease over time. However, at present a large fraction of the patterning and materials requirements that we expect to need for the construction of new integrated circuit technologies in 2013 have 'no known solution'. Promising ingredients for advances in integrated circuit technology are nanowires, molecular electronics and defect-tolerant architectures, as demonstrated by reports of single devices and small circuits. Methods of extending these approaches to large-scale, high-density circuitry are largely undeveloped. Here we describe a 160,000-bit molecular electronic memory circuit, fabricated at a density of 10(11) bits cm(-2) (pitch 33 nm; memory cell size 0.0011 microm2), that is, roughly analogous to the dimensions of a DRAM circuit projected to be available by 2020. A monolayer of bistable, [2]rotaxane molecules served as the data storage elements. Although the circuit has large numbers of defects, those defects could be readily identified through electronic testing and isolated using software coding. The working bits were then configured to form a fully functional random access memory circuit for storing and retrieving information.

A 160-kilobit molecular electronic memory patterned at 10(11) bits per square centimetre.

Ferroelectric ferromagnets are exceedingly rare, fundamentally interesting multiferroic materials that could give rise to new technologies in which the low power and high speed of field-effect electronics are combined with the permanence and routability of voltage-controlled ferromagnetism. Furthermore, the properties of the few compounds that simultaneously exhibit these phenomena are insignificant in comparison with those of useful ferroelectrics or ferromagnets: their spontaneous polarizations or magnetizations are smaller by a factor of 1,000 or more. The same holds for magnetic- or electric-field-induced multiferroics. Owing to the weak properties of single-phase multiferroics, composite and multilayer approaches involving strain-coupled piezoelectric and magnetostrictive components are the closest to application today. Recently, however, a new route to ferroelectric ferromagnets was proposed by which magnetically ordered insulators that are neither ferroelectric nor ferromagnetic are transformed into ferroelectric ferromagnets using a single control parameter, strain. The system targeted, EuTiO(3), was predicted to exhibit strong ferromagnetism (spontaneous magnetization, approximately 7 Bohr magnetons per Eu) and strong ferroelectricity (spontaneous polarization, approximately 10 microC cm(-2)) simultaneously under large biaxial compressive strain. These values are orders of magnitude higher than those of any known ferroelectric ferromagnet and rival the best materials that are solely ferroelectric or ferromagnetic. Hindered by the absence of an appropriate substrate to provide the desired compression we turned to tensile strain. Here we show both experimentally and theoretically the emergence of a multiferroic state under biaxial tension with the unexpected benefit that even lower strains are required, thereby allowing thicker high-quality crystalline films. This realization of a strong ferromagnetic ferroelectric points the way to high-temperature manifestations of this spin-lattice coupling mechanism. Our work demonstrates that a single experimental parameter, strain, simultaneously controls multiple order parameters and is a viable alternative tuning parameter to composition for creating multiferroics.

A strong ferroelectric ferromagnet created by means of spin-lattice coupling.

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Graphene's success has shown that it is possible to not only create stable, single and few atom-thick layers of van der Waals materials, but also that these materials can exhibit fascinating and technologically useful properties. Here we review the state-of-the-art of 2D materials beyond graphene. Initially, we will outline the different chemical classes of 2D materials and discuss the various strategies to prepare single-layer, few, and multilayer assemblies materials in solution, on substrates, and on the wafer scale. Additionally, we present an experimental guide for identifying and characterizing single-layer thick materials, as well as outlining emerging techniques that yield both local and global information. We describe the differences that occur in the electronic structure between the bulk and the single layer and discuss various methods of tuning their electronic properties by manipulating the surface. Finally, we highlight the properties and advantages of single-, few-, and many-layer 2D materials in field effect transistors, spin- and valley-tronics, thermoelectrics, and topological insulators, among many other applications.

Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene.

Succ&egrave;s du graph&egrave;ne a montr&eacute; qu&#39;il est possible de cr&eacute;er non seulement stables, simples et quelques couches d&#39;atome d&#39;&eacute;paisseur de van der Waals, mat&eacute;riaux, mais aussi que ces mat&eacute;riaux peut pr&eacute;senter des propri&eacute;t&eacute;s fascinantes et technologiquement utiles. Nous r&eacute;sumons ici la de-la-pointe des mat&eacute;riaux 2D au-del&agrave; de graph&egrave;ne. Au d&eacute;part, nous d&eacute;crira les diff&eacute;rentes classes chimiques des mat&eacute;riaux 2D et discuter les diff&eacute;rentes strat&eacute;gies pour pr&eacute;parer les monocouches, mat&eacute;riaux multicouches et quelques assembl&eacute;es en solution, sur des substrats et sur l&#39;&eacute;chelle de la plaquette. En outre, nous pr&eacute;sentons un guide exp&eacute;rimental pour identifier et caract&eacute;riser les mat&eacute;riaux &eacute;pais monocouche, tout en d&eacute;finissant les nouvelles techniques qui donnent des informations locales et mondiales. Les auteurs d&eacute;crivent les diff&eacute;rences qui surviennent dans la structure &eacute;lectronique entre l&#39;essentiel et la couche unique et de discutent des diverses m&eacute;thodes de l&#39;&eacute;coute de leurs propri&eacute;t&eacute;s &eacute;lectroniques en manipulant la surface. Enfin, nous mettons en &eacute;vidence les propri&eacute;t&eacute;s et les avantages de single-, quelques-uns-, et plusieurs couches de mat&eacute;riaux 2D en champ effect transistors, spin - et de la vall&eacute;e-tronics, thermo&eacute;lectrique et isolateurs topologiques, parmi beaucoup d&#39;autres applications.

Progr&egrave;s, d&eacute;fis et opportunit&eacute;s en mat&eacute;riaux bidimensionnels au-del&agrave; de graph&egrave;ne.

Graphen der Erfolg hat gezeigt, dass es m&ouml;glich ist, nicht nur stabile, Einzel- und paar Atom-dicke Schichten von van-der-Waals Materialien, aber auch das Erstellen dieser Materialien k&ouml;nnen faszinierende und technologisch n&uuml;tzliche Eigenschaften aufweisen. Hier &uuml;berpr&uuml;fen wir den Stand der Technik von 2D Material &uuml;ber Graphen. Zun&auml;chst, wir beschreiben die verschiedenen chemischen Klassen 2D Materialien und diskutieren die verschiedenen Strategien zur Vorbereitung der einschichtigen, Assemblys paar und mehrschichtigen Materialien in L&ouml;sung auf Substraten und auf Wafer-Ebene. Dar&uuml;ber hinaus pr&auml;sentieren wir einen experimentellen Leitfaden f&uuml;r die Identifizierung und Charakterisierung einschichtige Dicke Materialien, sowie die Gliederung Zukunftstechniken, die sowohl lokale als auch globale Informationen liefern. Wir beschreiben die Unterschiede, die in der Elektronenstruktur zwischen die Masse und die einlagige auftreten und verschiedene Methoden der Optimierung ihrer elektronischen Eigenschaften durch Manipulation der Oberfl&auml;che diskutieren. Schlie&szlig;lich wir markieren die Eigenschaften und Vorteile der Einzel-, Paar, und n-Schicht 2D Materialien im Feld Effekt Transistoren, Drehbeschleunigung und Tal-Tronics, Thermoelektrik und topologische Isolatoren, unter vielen anderen Anwendungen.

Fortschritt, Herausforderungen und Chancen im zweidimensionalen Materialien &uuml;ber Graphen.

Successo di grafene ha dimostrato che &egrave; possibile non solo creare stabili, singoli e qualche atomo di spessore strati di van der Waals, materiali, ma anche che questi materiali possono esibire propriet&agrave; tecnologicamente utile e affascinante. Qui esaminiamo lo stato di arte di materiali 2D di l&agrave; di grafene. Inizialmente, ci descrivono le diverse classi chimiche dei materiali 2D e discutere le diverse strategie per preparare single-layer, materiali assembly pochi e multistrato in soluzione, su substrati e sulla scala dei wafer. Inoltre, vi presentiamo una guida sperimentale per identificare e caratterizzare materiali spessi e singolo strato, nonch&eacute; delineare tecniche emergenti che producono informazioni sia locali che globali. Descriviamo le differenze che si verificano nella struttura elettronica tra la massa e il singolo strato e discutere i vari metodi di sintonizzazione loro propriet&agrave; elettroniche manipolando la superficie. Infine, si evidenziano le propriet&agrave; e vantaggi del singolo-, pochi, e molti strati di materiali 2D in campo l&#39;effetto transistor, spin - e Valle-tronics, termoelettrica e isolanti topologici, tra molte altre applicazioni.

Progresso, sfide e opportunit&agrave; in materiali bidimensionale di l&agrave; di grafene.

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&Eacute;xito de grafeno ha demostrado que es posible crear no solo estables, &uacute;nica y algunas capas del &aacute;tomo de espesor de van der Waals materiales, sino que estos materiales pueden exhibir propiedades fascinantes y tecnol&oacute;gicamente &uacute;tiles. Aqu&iacute; revisamos el estado-de-la-arte de materiales 2D m&aacute;s all&aacute; de grafeno. Inicialmente, vamos a describir las diferentes clases de qu&iacute;micas de materiales 2D y discutir las diversas estrategias para preparar monocapa, materiales de pocos, y multicapa en soluci&oacute;n, sobre sustratos y en la escala de la oblea. Adem&aacute;s, presentamos a una gu&iacute;a experimental para identificar y caracterizar una capa de materiales gruesos, as&iacute; como esbozar nuevas t&eacute;cnicas que producen informaci&oacute;n tanto local como global. Describimos las diferencias que se producen en la estructura electr&oacute;nica entre el grueso y la capa &uacute;nica y discuten varios m&eacute;todos de ajuste sus propiedades electr&oacute;nicas mediante la manipulaci&oacute;n de la superficie. Por &uacute;ltimo, destacamos las propiedades y ventajas del solo-, pocos-, y muchas capas 2D materiales en campo efect&uacute;an transistores, vuelta - y Valle-tronics, termoel&eacute;ctricos y aislantes topol&oacute;gicos, entre otras muchas aplicaciones.

Avances, retos y oportunidades en dos dimensiones materiales m&aacute;s all&aacute; de grafeno.

The preparation and characterization of a new thin-film organic-based magnet V[MeTCEC]x (V = vanadium; MeTCEC = methyl tricaynoethylenecarboxylate) via low-temperature chemical vapor deposition (50 °C) is reported. These thin films exhibit room-temperature magnetic ordering and semiconducting behavior, demonstrating the ability of tuning their magnetic, and potentially spintronic, functionality via chemical modification of the organic ligand.

Thin-film deposition of an organic magnet based on vanadium methyl tricyanoethylenecarboxylate.

Understanding the complex properties of electronic and spintronic devices at the micro- and nano-scale is a topic of intense current interest as it becomes increasingly important for scientific progress and technological applications. In operando characterization of such devices by scanning probe techniques is particularly well-suited for the microscopic study of these properties. We have developed a scanning probe microscope (SPM) which is capable of both standard force imaging (atomic, magnetic, electrostatic) and simultaneous electrical transport measurements. We utilize flexible and inexpensive FPGA (field-programmable gate array) hardware and a custom software framework developed in National Instrument's LabVIEW environment to perform the various aspects of microscope operation and device measurement. The FPGA-based approach enables sensitive, real-time cantilever frequency-shift detection. Using this system, we demonstrate electrostatic force microscopy of an electrically biased graphene field-effect transistor device. The combination of SPM and electrical transport also enables imaging of the transport response to a localized perturbation provided by the scanned cantilever tip. Facilitated by the broad presence of LabVIEW in the experimental sciences and the openness of our software solution, our system permits a wide variety of combined scanning and transport measurements by providing standardized interfaces and flexible access to all aspects of a measurement (input and output signals, and processed data). Our system also enables precise control of timing (synchronization of scanning and transport operations) and implementation of sophisticated feedback protocols, and thus should be broadly interesting and useful to practitioners in the field.

Ezekiel Johnston-Halperin

Department of Physics

The Ohio State University

Chemical Vapor Deposition of an Organic Magnet, Vanadium Tetracyanoethylene

Ezekiel Johnston-Halperin

.css-o250i3{font-size:18px;font-family:Open Sans,sans-serif;line-height:21.6px;}Department of Physics

The Ohio State University

Chemical Vapor Deposition of an Organic Magnet, Vanadium Tetracyanoethylene

Department of Physics