Deposition of Hydrogenated Amorphous Silicon (a-Si:H) on a Fused Silica Substrate by Plasma-enhanced Chemical Vapor Deposition (PECVD)
1:35
Formation of the Chromium Etching Mask
6:53
Etching Process of Hydrogenated Amorphous Silicon
7:41
Results: The Fabricated Metasurface and its Polarization-independent
8:31
Conclusion
Transcript
This protocol provides a detailed fabrication method to realize high efficiency metasurfaces, one of the most important issues in metasurface research area. Compared with other methods to test atomic layer deposition, this technique is a low cost
Sign in or start your free trial to access this content
A protocol for the fabrication and optical characterization of dielectric metasurfaces is presented. This method can be applied to the fabrication of not only beam splitters, but also of general dielectric metasurfaces, such as lenses, holograms, and optical cloaks.
