אנו להכיר שהבאות כספי תמיכה; מענק הסיוע עבור קידום מיוחד מחקר (לא 25000003) מ- JSPS, מענק הסיוע עבור מחקר סטארט-אפ פעילות (No.15H06133) וחקר מאתגר (גישוש) (לא. JP17K18748) מן MEXT של יפן.

המחברים אין לחשוף.

WS2 NTs והן פתיתים, לנו יש בהצלחה בשליטת המאפיינים חשמלי אלקטרוסטטי או אלקטרו כימי נושא סמים בספורט.
באזור סימום אלקטרוסטטית, נצפתה טרנזיסטור ambipolar מבצע. עיקול העברה ambipolar כזה עם גבוה/ביטול יחס (> 102) נצפתה ב הטיה נמוך מתח מציין המוביל יעיל סמים בספורט-הממשק של טכניקה ?...

שליטה של המספר המוביל היא הטכניקה המפתח למימוש של מעבר פאזה קוונטית מוצקים1. ב ה טרנזיסטור אפקט שדות קונבנציונלי (FET), היא מושגת על ידי שימוש של שער מוצק1,2. במכשיר כזה, הדרגתי פוטנציאל חשמלי הוא אחיד לאורך כל החומרים מבודד ולכן המספר המוביל המושרה על הממשק הוא מוגבל, המוצגת איור 1a.
מצד שני, ניתן להשיג את צפיפות הספק גבוהה יותר ממשק או בתפזורת על-ידי החלפת החומרים מבודד מוצק מוצקים יוניים/נוזלים או פולימר אלקטרוליטים3,4,5,6, 7,8,9,10,11 (איור 1b). ב להזרקות אלקטרוסטטית על ידי שימוש של הנוזל יוניים, נוצרת שכבה כפולה חשמלי טרנזיסטור (EDLT) מבנה בין נוזל יוניים, לדוגמה, יצירת שדה חשמלי חזק (> V 0.5/Å) אפילו במתח נמוך הסטייה. צפיפות הספק גבוהה הנובעת (>14 10 ס מ-2) המושרה על הגורם13 ממשק12,10,את הרומן אלקטרונית מאפיינים או קוונטית מעבר פאזה כגון פרומגנטיות חשמלי-שדה-induced14, קולון מצור על15, תחבורה ambipolar16,17,18,19,20, 21 , 22 , 23 , 24 , 25 , 26 , 27, היווצרות צומת p-n ו- electroluminance תוצאות28,29,30, אפנון גדול של כוחות תרמואלקטרי31,32גובה גל הצפיפות ואת מוט המעברים33,34,35, מתכת מבודד חשמלי-שדה-induced שינוי מיגדרי36,37 כולל מוליכות חשמלית-שדה-induced9 ,10,11,38,39,40,41,42,43,44 ,45,46,47,48,49.
ב אלקטרוליט gating (איור 1 c), יונים לא רק צבר-הממשק לצורה EDLT, אבל יכול להיות intercalated גם לתוך שכבות של חומרים מימדי באמצעות דיפוזיה התרמי מבלי להזיק הדגימה תחת החלת את המתח שער גדול, שמוביל אלקטרוכימי סימום8,9,11,34,38,50,51,52,53 . לפיכך, אנחנו יכולים באופן דרסטי לשנות את המספר המוביל בהשוואה ה טרנזיסטור אפקט שדות קונבנציונלי באמצעות השער מוצק. בפרט, מוליכות חשמלית-שדה-induced9,11,34,38,50 ממומש על ידי השימוש אלקטרוליט gating באזור של הספק גדול המספר שבו לא נוכל לגשת על ידי השיטה המקובלת המגביל מוצק.
במאמר זה, נסקור טכניקה ייחודית זו השליטה מספר הספק מוצקים, סקירה כללית של טרנזיסטור מבצע של מוליכות חשמלית-שדה-induced ב- WS מוליכים למחצה2 דוגמאות כגון WS2 פתיתי WS2 צינוריות54,55,56,57.

<table><tbody><tr><td>Sonication machine</td><td>SND Co., Ltd.</td><td>US-2</td><td>http://www.senjyou.jp/</td></tr><tr><td>Spin-coater machine</td><td>ACTIVE Co.,Ltd.</td><td>ACT-300AII</td><td>http://www.acti-ve.co.jp/spincoater/standard/act300a2.html</td></tr><tr><td>Hot-plate</td><td>TAIYO</td><td>HP131224</td><td>http://www.taiyo-kabu.co.jp/products/detail.php?product_id=431</td></tr><tr><td>Optical Microscopy</td><td>OLYMPUS</td><td>BX51</td><td>https://www.olympus-ims.com/ja/microscope/bx51p/</td></tr><tr><td>Electron Beam Lithography machine</td><td>ELIONIX INC.</td><td>ELS-7500I</td><td>https://www.elionix.co.jp/index.html</td></tr><tr><td>Scribing machine</td><td>TOKYO SEIMITSU CO., LTD.</td><td>A-WS-100A</td><td>http://www.accretech.jp/english/product/semicon/wms/aws100s.html</td></tr><tr><td>Wire-bonding machine</td><td>WEST&amp;middot;BOND&amp;nbsp;</td><td>7476D-79</td><td>https://www.hisol.jp/products/bonder/wire/mgb/b.html</td></tr><tr><td>Physical Properties Measurement System</td><td>Quantum Design</td><td>PPMS</td><td>http://www.qdusa.com/products/ppms.html</td></tr><tr><td>Lock-in amplifier</td><td>Stanford Research Systems</td><td>SRS830</td><td>http://www.thinksrs.com/products/SR810830.htm</td></tr><tr><td>Source meter</td><td>Textronix</td><td>KEITHLEY 2612A</td><td>http://www.tek.com/keithley-source-measure-units/smu-2600b-series-sourcemeter</td></tr><tr><td>KClO&lt;sub&gt;4&lt;/sub&gt;</td><td>Sigma-Aldrich</td><td>241830</td><td>http://www.sigmaaldrich.com/catalog/product/sigald/241830?lang=ja&amp;amp;region=JP</td></tr><tr><td>PEG</td><td>WAKO</td><td>168-09075</td><td>http://www.siyaku.com/uh/Shs.do?dspCode=W01W0116-0907</td></tr><tr><td>IPA</td><td>WAKO</td><td>169-28121</td><td>http://www.siyaku.com/uh/Shs.do?dspWkfcode=169-28121</td></tr><tr><td>MIBK</td><td>WAKO</td><td>131-05645</td><td>http://www.siyaku.com/uh/Shs.do?dspCode=W01W0113-0564</td></tr><tr><td>PMMA</td><td>MicroChem</td><td>PMMA</td><td>http://microchem.com/Prod-PMMA.htm</td></tr><tr><td>Acetone</td><td>WAKO</td><td>012-26821</td><td>http://www.siyaku.com/uh/Shs.do?dspWkfcode=012-26821</td></tr></tbody></table>

electric-field control of electronic states in ws2 nanodevices by electrolyte gating

שיטת השליטה מספר הספק של gating אלקטרוליט הוא הפגין. לנו יש להשיג WS2 פתיתי דק עם משטח שטוח מאגרי באמצעות דבק שיטה או בודדים WS2 צינורות על ידי פיזור התליה של WS2 צינורות. הדגימות שנבחרו היה מפוברק לתוך מכשירים על ידי שימוש ליתוגרפיה קרן אלקטרונים, אלקטרוליט הוא לשים על המכשירים. אנחנו שאפיינו את מאפייני ההתקנים תחת החלת את המתח שער אלקטרונית. באזור מתח שער קטן, יונים של האלקטרוליט שנצברו על פני השטח של הדגימות אשר מוביל גדול חשמלי פוטנציאל טיפה ואת תוצאות אלקטרוסטטית המוביל סימום על הממשק. העברת ambipolar עקומה נצפתה באזור זה סימום אלקטרוסטטית. כאשר המתח השער הוא גדל עוד יותר, נפגשנו עלייה דרסטית נוספת של זרם המקור-סוחטים ממנה משתמע כי יונים הן intercalated לתוך שכבות של WS2 , הספק אלקטרוכימי סימום הוא הבין. באזור סימום אלקטרוכימי כזה, נצפתה מוליכות-. הטכניקה ממוקד מספק עוצמה אסטרטגיה להשגת של מעבר פאזה קוונטית חשמלי-הגיש-induced.

הפעולות טרנזיסטור טיפוסי של NT2 בודדים של WS והתקנים של WS2 פתית מוצגים באיור 3a ו- 3b, בהתאמה, היכן המקור ניקוז הנוכחי (אניDS) כפונקציה של המתח שער (V G) יפה פועלת במצב ambipolar, מציג ניגוד מדהים על התגובה unipolar שער FET מגודרת מו?...

Watch this Scientific Journal Video about Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating at JoVE.com

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

כאן, אנו מציגים פרוטוקול כדי לקבוע את מספר הספק במוצקים באמצעות האלקטרוליט.

פקד שדה חשמלי של הברית אלקטרונית ב- WS Nanodevices2 מאת אלקטרוליט Gating

A method of carrier number control by electrolyte gating is demonstrated. We have obtained WS2 thin flakes with atomically flat surface via scotch tape ...

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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Electric Charges and Fields

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11.3K Views.  The University of Tokyo. כאן, אנו מציגים פרוטוקול כדי לקבוע את מספר הספק במוצקים באמצעות האלקטרוליט.

Video: Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

A quantum computer is a computer composed of quantum bits (qubits) that takes advantage of quantum effects, such as superposition of states and entanglement, to solve certain problems exponentially faster than with the best known algorithms on a classical computer. Gate-defined lateral quantum dots on GaAs/AlGaAs are one of many avenues explored for the implementation of a qubit. When properly fabricated, such a device is able to trap a small number of electrons in a certain region of space. The spin states of these electrons can then be used to implement the logical 0 and 1 of the quantum bit. Given the nanometer scale of these quantum dots, cleanroom facilities offering specialized equipment- such as scanning electron microscopes and e-beam evaporators- are required for their fabrication. Great care must be taken throughout the fabrication process to maintain cleanliness of the sample surface and to avoid damaging the fragile gates of the structure. This paper presents the detailed fabrication protocol of gate-defined lateral quantum dots from the wafer to a working device. Characterization methods and representative results are also briefly discussed. Although this paper concentrates on double quantum dots, the fabrication process remains the same for single or triple dots or even arrays of quantum dots. Moreover, the protocol can be adapted to fabricate lateral quantum dots on other substrates, such as Si/SiGe.

This paper presents a detailed fabrication protocol for gate-defined semiconductor lateral quantum dots on gallium arsenide heterostructures. These nanoscale devices are used to trap few electrons for use as quantum bits in quantum information processing or for other mesoscopic experiments such as coherent conductance measurements.

Nanofabrication של השער שהוגדרו GaAs / AlGaAs נקודות קוונטיות רוחביות

A quantum computer is a computer composed of quantum bits (qubits) that takes advantage of quantum effects, such as superposition of states and ...

Fine-tuning the Size and Minimizing the Noise of Solid-state Nanopores

Solid-state nanopores have emerged as a versatile tool for the characterization of single biomolecules such as nucleic acids and proteins1. However, the creation of a nanopore in a thin insulating membrane remains challenging. Fabrication methods involving specialized focused electron beam systems can produce well-defined nanopores, but yield of reliable and low-noise nanopores in commercially available membranes remains low2,3 and size control is nontrivial4,5. Here, the application of high electric fields to fine-tune the size of the nanopore while ensuring optimal low-noise performance is demonstrated. These short pulses of high electric field are used to produce a pristine electrical signal and allow for enlarging of nanopores with subnanometer precision upon prolonged exposure. This method is performed in situ in an aqueous environment using standard laboratory equipment, improving the yield and reproducibility of solid-state nanopore fabrication.

A methodology for preparing solid-state nanopores in solution for biomolecular translocation experiments is presented. By applying short pulses of high electric fields, the nanopore diameter can be controllably enlarged with subnanometer precision and its electrical noise characteristics significantly improved. This procedure is performed in situ using standard laboratory equipment under experimental conditions.

כיוון עדין גודל ומזעור הרעש של מצב המוצק Nanopores

Solid-state nanopores have emerged as a versatile tool for the characterization of single biomolecules such as nucleic acids and proteins1. However, the ...

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Owing to its relativistic low-energy charge carriers, the interaction between graphene and various impurities leads to a wealth of new physics and degrees of freedom to control electronic devices. In particular, the behavior of graphene&#8217;s charge carriers in response to potentials from charged Coulomb impurities is predicted to differ significantly from that of most materials. Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) can provide detailed information on both the spatial and energy dependence of graphene&#39;s electronic structure in the presence of a charged impurity.&#160;The design of a hybrid impurity-graphene device, fabricated using controlled deposition of impurities onto a back-gated graphene surface, has enabled several novel methods for controllably tuning graphene&#8217;s electronic properties.1-8 Electrostatic gating enables control of the charge carrier density in graphene and the ability to reversibly tune the charge2 and/or molecular5 states of an impurity. This paper outlines the process of fabricating a gate-tunable graphene device decorated with individual Coulomb impurities for combined STM/STS studies.2-5 These studies provide valuable insights into the underlying physics, as well as signposts for designing hybrid graphene devices.

This paper details the fabrication process of a gate-tunable graphene device, decorated with Coulomb impurities for scanning tunneling microscopy studies. Mapping the spatially dependent electronic structure of graphene in the presence of charged impurities unveils the unique behavior of its relativistic charge carriers in response to a local Coulomb potential.

המצאה של השער-מתכונן התקני גראפן לסריקה מיקרוסקופית מנהור מחקרים עם זיהומים קולון

Owing to its relativistic low-energy charge carriers, the interaction between graphene and various impurities leads to a wealth of new physics and degrees ...

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization.

The fabrication process and experimental characterization techniques relevant to single-electron pumps based on silicon metal-oxide-semiconductor quantum dots are discussed.

סיליקון מתכת-תחמוצת-מוליכים למחצה קוונטי נקודות לשאיבת חד אלקטרון

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by ...

Fabrication of Carbon Nanotube High-Frequency Nanoelectronic Biosensor for Sensing in High Ionic Strength Solutions

The unique electronic properties and high surface-to-volume ratios of single-walled carbon nanotubes (SWNT) and semiconductor nanowires (NW) 1-4 make them good candidates for high sensitivity biosensors. When a charged molecule binds to such a sensor surface, it alters the carrier density5 in the sensor, resulting in changes in its DC conductance. However, in an ionic solution a charged surface also attracts counter-ions from the solution, forming an electrical double layer (EDL). This EDL effectively screens off the charge, and in physiologically relevant conditions ~100 millimolar (mM), the characteristic charge screening length (Debye length) is less than a nanometer (nm). Thus, in high ionic strength solutions, charge based (DC) detection is fundamentally impeded6-8.
We overcome charge screening effects by detecting molecular dipoles rather than charges at high frequency, by operating carbon nanotube field effect transistors as high frequency mixers9-11. At high frequencies, the AC drive force can no longer overcome the solution drag and the ions in solution do not have sufficient time to form the EDL. Further, frequency mixing technique allows us to operate at frequencies high enough to overcome ionic screening, and yet detect the sensing signals at lower frequencies11-12. Also, the high transconductance of SWNT transistors provides an internal gain for the sensing signal, which obviates the need for external signal amplifier.
Here, we describe the protocol to (a) fabricate SWNT transistors, (b) functionalize biomolecules to the nanotube13, (c) design and stamp a poly-dimethylsiloxane (PDMS) micro-fluidic chamber14 onto the device, and (d) carry out high frequency sensing in different ionic strength solutions11.

We describe the device fabrication and measurement protocol for carbon nanotube based high frequency biosensors. The high frequency sensing technique mitigates the fundamental ionic (Debye) screening effect and allows nanotube biosensor to be operated in high ionic strength solutions where conventional electronic biosensors fail. Our technology provides a unique platform for point-of-care (POC) electronic biosensors operating in physiologically relevant conditions.

המצאה של Biosensor Nanotube פחמן בתדירות גבוהה Nanoelectronic לחישה בפתרוני כוח יוניים גבוהים

The unique electronic properties and high surface-to-volume ratios of single-walled carbon nanotubes (SWNT) and semiconductor nanowires (NW) 1-4 make them ...

Bioengineering

Characterizing Electron Transport through Living Biofilms

Here we demonstrate the method of electrochemical gating used to characterize electrical conductivity of electrode-grown microbial biofilms under physiologically relevant conditions.1 These measurements are performed on living biofilms in aqueous medium using source and drain electrodes patterned on a glass surface in a specialized configuration referred to as an interdigitated electrode (IDA) array. A biofilm is grown that extends across the gap connecting the source and drain. Potentials are applied to the electrodes (ES and ED) generating a source-drain current (ISD) through the biofilm between the electrodes. The dependency of electrical conductivity on gate potential (the average of the source and drain potentials, EG = [ED + ES]/2) is determined by systematically changing the gate potential and measuring the resulting source-drain current. The dependency of conductivity on gate potential provides mechanistic information about the extracellular electron transport process underlying the electrical conductivity of the specific biofilm under investigation. The electrochemical gating measurement method described here is based directly on that used by M. S. Wrighton2,3 and colleagues and R. W. Murray4,5,6 and colleagues in the 1980&#39;s to investigate thin film conductive polymers.

A protocol for measuring electrical conductivity of living microbial biofilms under physiologically relevant conditions is presented.

אפיון תחבורה אלקטרון דרך חיים Biofilms

Here we demonstrate the method of electrochemical gating used to characterize electrical conductivity of electrode-grown microbial biofilms under ...

Chemistry

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Flow-assisted dielectrophoresis (DEP) is an efficient self-assembly method for the controllable and reproducible positioning, alignment, and selection of nanowires. DEP is used for nanowire analysis, characterization, and for solution-based fabrication of semiconducting devices. The method works by applying an alternating electric field between metallic electrodes. The nanowire formulation is then dropped onto the electrodes which are on an inclined surface to create a flow of the formulation using gravity. The nanowires then align along the gradient of the electric field and in the direction of the liquid flow. The frequency of the field can be adjusted to select nanowires with superior conductivity and lower trap density. 
In this work, flow-assisted DEP is used to create nanowire field effect transistors. Flow-assisted DEP has several advantages: it allows selection of nanowire electrical properties; control of nanowire length; placement of nanowires in specific areas; control of orientation of nanowires; and control of nanowire density in the device. 
The technique can be expanded to many other applications such as gas sensors and microwave switches. The technique is efficient, quick, reproducible, and it uses a minimal amount of dilute solution making it ideal for the testing of novel nanomaterials. Wafer scale assembly of nanowire devices can also be achieved using this technique, allowing large numbers of samples for testing and large-area electronic applications.

In this paper, flow assisted dielectrophoresis is demonstrated for the self-assembly of nanowire devices. The fabrication of a silicon nanowire field effect transistor is shown as an example.

בסיוע זרימת Dielectrophoresis: שיטה בעלות נמוכה עבור הזיוף של התקני ננו-חוט processable-פתרון ביצועים גבוהים

Flow-assisted dielectrophoresis (DEP) is an efficient self-assembly method for the controllable and reproducible positioning, alignment, and selection of ...

Generation and Control of Electrohydrodynamic Flows in Aqueous Electrolyte Solutions

To drive electrohydrodynamic (EHD) flows in aqueous solutions, the separation of cation and anion transport pathways is essential because a directed electric body force has to be induced by ionic motions in liquid. On the other hand, positive and negative charges attract each other, and electroneutrality is maintained everywhere in equilibrium conditions. Furthermore, an increase in an applied voltage has to be suppressed to avoid water electrolysis, which causes the solutions to become unstable. Usually, EHD flows can be induced in non-aqueous solutions by applying extremely high voltages, such as tens of kV, to inject electrical charges. In this study, two methods are introduced to generate EHD flows induced by electrical charge separations in aqueous solutions, where two liquid phases are separated by an ion-exchange membrane. Due to a difference in the ionic mobility in the membrane, ion concentration polarization is induced between both sides of the membrane. In this study, we demonstrate two methods. (i) The relaxation of ion concentration gradients occurs via a flow channel that penetrates an ion-exchange membrane, where the transport of the slower species in the membrane selectively becomes dominant in the flow channel. This is a driving force to generate an EHD flow in the liquid. (ii) A long waiting time for the diffusion of ions passing through the ion-exchange membrane enables the generation of an ion-dragged flow by externally applying an electric field. Ions concentrated in a flow channel of a 1 x 1 mm2 cross-section determine the direction of the liquid flow, corresponding to the electrophoretic transport pathways. In both methods, the electric voltage difference required for an EHD flow generation is drastically reduced to near 2 V by rectifying the ion transport pathways.

The rectification of ion transport pathways is an effective method to generate one-directional ion-dragged electrohydrodynamic flows. By setting an ion-exchange membrane in a flow channel, an electrically polarized condition is generated and causes a liquid flow to be driven when an electric field is externally applied.

דור ובקרה של Electrohydrodynamic זורם בפתרונות אלקטרוליט מימית

To drive electrohydrodynamic (EHD) flows in aqueous solutions, the separation of cation and anion transport pathways is essential because a directed ...

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Two-dimensional (2D) materials have attracted huge attention due to their unique properties and potential applications. Since wafer scale synthesis of 2D materials is still in nascent stages, scientists cannot fully rely on traditional semiconductor techniques for related research. Delicate processes from locating the materials to electrode definition need to be well controlled. In this article, a universal fabrication protocol required in manufacturing nanoscale electronics, such as 2D quasi-heterojunction bipolar transistors (Q-HBT), and 2D back-gated transistors are demonstrated. This protocol includes the determination of material position, electron beam lithography (EBL), metal electrode definition, et al. A step by step narrative of the fabrication procedures for these devices are also presented. Furthermore, results show that each of the fabricated devices has achieved high performance with high repeatability. This work reveals a comprehensive description of process flow for preparing 2D nano-electronics, enables the research groups to access this information, and pave the way toward future electronics.

The article aims to introduce a standard and reliable fabrication procedure for the development of future low dimensional nanoelectronics.

שיטה סטנדרטית ואמינה כדי לפברק Nanoelectronics דו מימדי

Two-dimensional (2D) materials have attracted huge attention due to their unique properties and potential applications. Since wafer scale synthesis of 2D ...

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Surveillance using biomarkers is critical for the early detection, rapid intervention, and reduction in the incidence of diseases. In this study, we describe the preparation of polycrystalline silicon nanowire field-effect transistors (pSNWFETs) that serve as biosensing devices for biomarker detection. A protocol for chemical and biomolecular sensing by using pSNWFETs is presented. The pSNWFET device was demonstrated to be a promising transducer for real-time, label-free, and ultra-high-sensitivity biosensing applications. The source/drain channel conductivity of a pSNWFET is sensitive to changes in the environment around its silicon nanowire (SNW) surface. Thus, by immobilizing probes on the SNW surface, the pSNWFET can be used to detect various biotargets ranging from small molecules (dopamine) to macromolecules (DNA and proteins). Immobilizing a bioprobe on the SNW surface, which is a multistep procedure, is vital for determining the specificity of the biosensor. It is essential that every step of the immobilization procedure is correctly performed. We verified surface modifications by directly observing the shift in the electric properties of the pSNWFET following each modification step. Additionally, X-ray photoelectron spectroscopy was used to examine the surface composition following each modification. Finally, we demonstrated DNA sensing on the pSNWFET. This protocol provides step-by-step procedures for verifying bioprobe immobilization and subsequent DNA biosensing application.

We describe key steps for biosensing by using polysilicon nanowire field-effect transistors, including the preparation of the device and the immobilization and confirmation of a DNA molecular probe on the nanowire surface, as well as conditions for DNA sensing.

הכנת טרנזיסטור הסיליקון Nanowire שדה ותוצאה עבור יישומים כימיים biosensing

Surveillance using biomarkers is critical for the early detection, rapid intervention, and reduction in the incidence of diseases. In this study, we ...

פקד שדה חשמלי של הברית אלקטרונית ב- WS Nanodevices₂ מאת אלקטרוליט Gating

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