The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film TransistorsTiago C. Gomes *1, Dinesh Kumar *2, Neri Alves *1, Jeff Kettle *2, Lucas Fugikawa-Santos *3
1School of Technology and Sciences, São Paulo State University - UNESP, 2Scholl of Electronic Engineering, Bangor University, 3Institute of Geosciences and Exact Sciences, São Paulo State University - UNESP
Anodization parameters for growth of the aluminum-oxide dielectric layer of zinc-oxide thin-film transistors (TFTs) are varied to determine the effects on the electrical parameter responses. Analysis of variance (ANOVA) is applied to a Plackett-Burman design of experiments (DOE) to determine the manufacturing conditions that result in optimized device performance.