Writing and Low-Temperature Characterization of Oxide Nanostructures

Oxide nanoelectronics is a rapidly growing field which seeks to develop novel materials with multifunctional behavior at nanoscale dimensions.  Oxide ...

University of Pittsburgh

With UV irradiation, Hg(2+) in aqueous solution can be converted into Hg(0) cold vapor by low molecular weight alcohols, aldehydes, or carboxylic acids, e.g., methanol, formaldehyde, acetaldehyde, glycol, 1,2-propanediol, glycerol, acetic acid, oxalic acid, or malonic acid. It was found that the presence of nano-TiO(2) more or less improved the efficiency of the photo-induced chemical/cold vapor generation (photo-CVG) with most of the organic reductants. The nano-TiO(2)-enhanced photo-CVG systems can be coupled to various analytical atomic spectrometric techniques for the determination of ultratrace mercury. In this work, we evaluated the application of this method to the atomic fluorescence spectrometric (AFS) determination of mercury in cold vapor mode. Under the optimized experimental conditions, the instrumental limits of detection (based on three times the standard deviation of 11 measurements of a blank solution) were around 0.02-0.04 microg L(-1), with linear dynamic ranges up to 15 microg L(-1). The interference of transition metals and the mechanism of the photo-CVG are briefly discussed. Real sample analysis using the photo-CVG-AFS method revealed that it was promising for water and geological analysis of ultralow levels of mercury.

Photo-induced cold vapor generation with low molecular weight alcohol, aldehyde, or carboxylic acid for atomic fluorescence spectrometric determination of mercury.

Devices that confine and process single electrons represent an important scaling limit of electronics. Such devices have been realized in a variety of materials and exhibit remarkable electronic, optical and spintronic properties. Here, we use an atomic force microscope tip to reversibly 'sketch' single-electron transistors by controlling a metal-insulator transition at the interface of two oxides. In these devices, single electrons tunnel resonantly between source and drain electrodes through a conducting oxide island with a diameter of ∼1.5 nm. We demonstrate control over the number of electrons on the island using bottom- and side-gate electrodes, and observe hysteresis in electron occupation that is attributed to ferroelectricity within the oxide heterostructure. These single-electron devices may find use as ultradense non-volatile memories, nanoscale hybrid piezoelectric and charge sensors, as well as building blocks in quantum information processing and simulation platforms.

Sketched oxide single-electron transistor.

Nanoscale control of the metal-insulator transition at the interface between LaAlO(3) and SrTiO(3) provides a pathway for reconfigurable, oxide-based nanoelectronics. Four-terminal transport measurements of LaAlO(3)/SrTiO(3) nanowires at room temperature (T = 300 K) reveal an equivalent 2D Hall mobility greatly surpassing that of bulk SrTiO(3) and approaching that of n-type Si nanowires of comparable dimensions. This large enhancement of mobility is relevant for room-temperature device applications.

Anomalous high mobility in LaAlO3/SrTiO3 nanowires.

Drought is a common stress limiting crops growth and productivities worldwide. Water deficit may increase cellular membrane permeability, resulting in K outflow. Internal K starvation may disorder plant metabolism and limit plant growth. However, it is seldom reported about the effects of external K on drought tolerance of contrasting wheat cultivars.

Effects of external potassium (k) supply on drought tolerances of two contrasting winter wheat cultivars.

We report quasi-1D superconductivity at the interface of LaAlO3 and SrTiO3. The material system and nanostructure fabrication method supply a new platform for superconducting nanoelectronics. Nanostructures having line widths w ~ 10 nm are formed from the parent two-dimensional electron liquid using conductive atomic force microscope lithography. Nanowire cross-sections are small compared to the superconducting coherence length in LaAlO3/SrTiO3, placing them in the quasi-1D regime. Broad superconducting transitions versus temperature and finite resistances in the superconducting state well below Tc ≈ 200 mK are observed, suggesting the presence of fluctuation- and heating-induced resistance. The superconducting resistances and V-I characteristics are tunable through the use of a back gate. Four-terminal resistances in the superconducting state show an unusual dependence on the current path, varying by as much as an order of magnitude. This new technology, i.e., the ability to 'write' gate-tunable superconducting nanostructures on an insulating LaAlO3/SrTiO3 'canvas', opens possibilities for the development of new families of reconfigurable superconducting nanoelectronics.

Guanglei Cheng

Department of Physics

University of Pittsburgh

Writing and Low-Temperature Characterization of Oxide Nanostructures

Guanglei Cheng

.css-o250i3{font-size:18px;font-family:Open Sans,sans-serif;line-height:21.6px;}Department of Physics

University of Pittsburgh

Writing and Low-Temperature Characterization of Oxide Nanostructures

Department of Physics