Electric-field Control of Electronic States in WS₂ Nanodevices by Electrolyte Gating

0:38

Dispersion of WS₂ Nanotubes (NTs) on a Si/SiO₂ Substrate

1:35

Application of WS₂ Flakes to a Si/SiO₂ Substrate with the Tape Method

2:28

Device Fabrication by Electron Beam Lithography

5:59

Electrode Deposition

7:17

Device Completion and Transport Measurements

8:31

Results: Transistor Operations of WS₂ Nanotube and Flake Devices

9:56

Conclusion