Silicon Wafer Passivation and Photoconductive (PC) Measurement
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Results: Silicon Wafer Photoconductive Measurement after Surface Passivation
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Conclusion
Transcript
The overall goal of this procedure is to use a room temperature surface passivation method in order to inhibit surface recombination, such that bulk silicon defects can be accurately characterized. This method can help us understand what defects w
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A RT liquid surface passivation technique to investigate the recombination activity of bulk silicon defects is described. For the technique to be successful, three critical steps are required: (i) chemical cleaning and etching of silicon, (ii) immersion of silicon in 15% hydrofluoric acid and (iii) illumination for 1 min.