Name: all-electronic nanosecond-resolved scanning tunneling microscopy: facilitating the investigation of single dopant charge dynamics
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Description: Watch this Scientific Journal Video about All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics at JoVE.com

我们要感谢马丁克卢捷和马克 Salomons 的技术专长。我们还感谢 NRC、NSERC 和 AITF 的财政支持。

1. 显微镜和实验的初步设置
<ol><li>首先是一个超高真空低温能力的 STM 和相关的控制软件。将 STM 冷却到低温温度。 注: 在本报告中, 超高真空指的是实现 < 10 x 10-10乇的系统。应将 STM 冷却到低温温度;这是特别重要的, 当调查掺杂的电荷动力学, 这是热活化在温和的温度。其他室可能在室温。</li>
	<li>确保 STM 尖端配备高频布线 (〜 500 MHz)。 注: 通过使用脉冲整形方法, Grosse et al.?...

<ol>
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不应用泵浦脉冲的 TR sts 的变体与传统的 sts 相比较, 只是系统的采样频率较高, 而不是连续取样。如果探针脉冲的持续时间是适当的 (>ΓLH), 则在没有泵浦脉冲的情况下获得的 TR sts 信号可以乘以与实验的任务周期成正比的常数, 以便与常规 sts 完全一致。测量.这是唯一可能的, 因为测量没有使用锁在放大器, 否则将减弱信号的一个未知数部分由于使用的低通滤波。这是不情愿的et al...

扫描隧道显微镜 (STM) 已成为纳米的主要工具, 它能够解决原子尺度的地形和电子结构。然而, 传统 STM 的一个局限性是, 由于当前前置放大器1的带宽有限, 其时间分辨率仅限于毫秒级。长期以来, 将 STM 的时间分辨率扩展到通常发生原子过程的尺度, 一直是一个目标。时间分辨扫描隧道显微镜 (TR STM) 的先驱工作由弗里曼et. al.1利用样品上图案的光导开关和微带传输线将皮秒电压脉冲传送到隧道连接处。这种连接混合技术已被用于实现 1 nm 和 20 ps2的同时分辨率, 但由于使用专门的样本结构的要求, 它从未被广泛采用。幸运的是, 从这些作品中获得的基本洞察力可以推广到许多时间分辨技术;即使 stm 电路的带宽仅限于几个赫兹, stm 中的非线性 I (V) 响应也能通过测量在许多泵探头循环中获得的平均隧道电流来探测更快的动力学。在这些年中, 已经探讨了许多方法, 其中最受欢迎的是下文简要回顾。
震动脉冲对激发 (SPPX) STM 利用超快脉冲激光技术的进步, 通过直接照亮隧道连接点和激动人心的载体在示例3中实现亚皮秒分辨率。入射激光产生的自由载流子, 瞬时增强传导, 并调制的泵和探头之间的延迟 (td) 允许 dI/dtd , 以锁定放大器来测量。由于泵和探头之间的延迟是调制的, 而不是激光的强度, 因为在许多其他光学方法中, SPPX-STM 避免了照片照明引起的尖端3的热膨胀。此方法的最近扩展扩展了 SPPX-STM 可以利用脉冲拾取技术来研究动态的时间刻度, 从而增加了泵探头延迟次数4的范围。重要的是, 最近的开发还提供了直接测量I(td) 曲线的能力, 而不是通过数值积分来度量。SPPX-STM 的最新应用包括研究单 (锰, 铁)/gaas (110) 结构的载体重组5和在 gaas6中的施主动力学。SPPX-STM 的应用面临一些限制。信号 SPPX-STM 措施取决于自由载流子激发的光脉冲和最适合半导体。此外, 虽然隧道电流是本地化的尖端, 因为大面积是激发的光脉冲, 信号是一个卷积的地方属性和物质运输。最后, 在测量的时间点固定在接合处的偏置, 使研究的动力学必须是光诱导的。
更近的光学技术, 太赫兹 stm (太赫兹), 夫妇自由空间太赫兹脉冲集中在连接到 stm 尖端。与 SPPX-STM 不同的是, 耦合脉冲表现为快速的电压脉冲, 允许对电子驱动的激发的调查, 与亚皮秒分辨率7。有趣的是, 由太赫兹脉冲产生的整流电流导致了传统的 STM8,9无法访问的峰值电流密度。该技术最近用于研究 Si (111)-(7x7)9中的热电子, 并对单个苯分子的振动进行图像10。太赫兹-脉冲自然耦合到尖端, 然而, 有必要整合一个太赫兹源的 STM 实验可能是对许多实验者的挑战。这推动了其他广泛适用和易于实施的技术的发展。
在 2010年, 不情愿的et al.11开发了一种全电子技术, 其中纳秒电压脉冲应用于直流偏置电子泵的顶部, 并探测系统11。这项技术的引入, 提供了一个关键的示范, 明确和实际应用的时间分辨 STM 测量以前未观测到的物理。虽然它不是一样快的结混合 stm, 它在它之前, 应用微波脉冲到 stm 提示允许任意样品被调查。此技术不需要任何复杂的光学方法或对 STM 连接的光学访问。这使它成为最简单的技术, 以适应低温单元。这些技术的首次演示应用于自旋-极化 STM 被用来测量泵浦脉冲激发的弛豫动力学的研究11。直到最近, 它的应用仍然局限于磁性原子系统12,13,14 , 但后来被扩展到从离散中隙状态15和电荷动力学的载波捕获速率研究单砷掺杂在硅中的15,16。后一项研究是这项工作的重点。
由于互补金属氧化物半导体 (CMOS) 器件现在进入了单个掺杂可以影响设备属性的系统, 因此对半导体中单掺杂的性能的研究已经引起了人们的广泛关注17.此外, 一些研究表明, 单掺杂可以作为未来器件的基本组成部分, 例如作为量子计算18和量子存储器19的量子比特, 以及作为单原子晶体管20,15. 未来的设备也可能包括其他的原子尺度缺陷, 如硅悬空键 (DB), 它可以用具有原子精度的图案与 STM 光刻21。为此, 星展集团已提出作为电荷量子比特22, 量子点元胞自动机架构23,24, 和原子线25,26 , 并已被阵列创建量子哈密顿逻辑门27和人工分子2829。前进, 设备可能包括单一掺杂和 DBs。这是一个有吸引力的策略, 因为 DBs 是表面缺陷, 可以很容易地用 STM 的特点, 并作为一个手柄, 以表征单一的掺杂装置。作为这一策略的一个例子, 星展在这项工作中用作电荷传感器来推断近表面掺杂的充电动力学。这些动态被捕获与使用的全电子方法的 TR STM, 这是适应的技术开发的不情愿的et al.11
测量是在选定的 DBs 上进行的氢终止 Si (100)-(2x1) 表面。在表面下面延伸约 60 nm 的掺杂剂损耗区域, 通过晶体30的热处理创建, 将了 DB, 并从散带中的少量剩余的近表面掺杂。STM 的研究发现, 他们的电导依赖于全球样本参数, 如掺杂浓度和温度, 但个别 dbs 也显示出强烈的变化, 取决于他们的本地环境16。在对单个 db 进行 STM 测量期间, 当前流受电子可以从大容量隧道到 db (Γ批量) 和从 db 到 tip (Γ提示) (图 1) 的速率的控制。但是, 由于 db 的传导对其本地环境很敏感, 因此附近掺杂的电荷状态会影响Γ批量(图 1B), 这可以通过监视 db 的电导来推断。因此, DB 的电导可以用来感知附近掺杂的电荷状态, 并可用于确定掺杂从大容量 (ΓLH) 中提供电子的速率, 并将它们丢失到 STM 尖端 (γHL/c13>)。为了解决这些动态, TR STS 是围绕阈值电压 (V,) 进行的, 在这种情况下, 尖端会诱发近表面掺杂的电离.在这里提出的三时间分辨实验技术中, 泵和探针脉冲的作用是相同的。泵瞬态带来的偏差水平, 从下面的V, 这导致掺杂电离.这增加了 DB 的电导率, 这是由探针脉冲采样, 它跟随在较低的偏置。
本文所描述的技术将有益于那些希望用 STM 来描述毫秒到纳秒时间的动力学特征的人。虽然这些技术并不局限于研究电荷动力学, 但至关重要的是, 通过瞬态变化的状态电导, 可以通过 STM 探测 (即,在表面或附近的状态) 来表现动力学。如果瞬态状态的电导与平衡态没有很大的不同, 那么瞬态和平衡电流之间的差乘以探针脉冲占空比的系统噪声下限 (通常1 pA), 信号将在噪声中丢失, 不会被这种技术探测到。由于对商业上可用的 STM 系统进行的实验性修改, 以执行本白皮书中所描述的技术是适度的, 预计这些技术将会被广泛的应用于社区。

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all-electronic nanosecond-resolved scanning tunneling microscopy: facilitating the investigation of single dopant charge dynamics

微型半导体器件的规模, 小数量的掺杂可以控制设备的性能需要开发新的技术能够表征其动力学。研究单掺杂需要亚纳米空间分辨率, 从而促使扫描隧道显微镜 (STM) 的使用。但是, 传统的 STM 仅限于毫秒时间分辨率。为了克服这一缺点, 我们开发了几种方法, 包括全电子时间分辨 STM, 这项研究使用纳秒分辨率来检测硅中的掺杂动力学。这里提出的方法是广泛的可访问的, 允许在原子尺度上对各种动力学进行局部测量。提出了一种新的时间分辨扫描隧道光谱学技术, 用于有效地搜索动力学。

文本的这一节中显示的结果以前已发布15,16。图 3说明了与常规 STM 一起选择的 DB 示例的行为。传统的 I (V) 测量 (图 3A) 清楚地描述了 DB 在V-2.0 v 的电导率的急剧变化. 在-2.1 v (图 3B、左面板)、-2.0 v (中间面板) 和-1.8 v (右面板) 的 STM 图像中也会出现...

Watch this Scientific Journal Video about All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics at JoVE.com

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

我们演示了一种全电子的方法, 以观察纳秒分辨电荷动力学的掺杂原子在硅与扫描隧道显微镜。

全电子纳秒分辨扫描隧道显微镜: 促进单一掺杂剂电荷动力学的研究

The miniaturization of semiconductor devices to scales where small numbers of dopants can control device properties requires the development of new ...

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Samples fully embedded in liquid can be studied at a nanoscale spatial resolution with Scanning Transmission Electron Microscopy (STEM) using a ...

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A nanoscale fabrication technique appropriate for milling carbon nanotube (CNT) forests is described. The technique utilizes an environmental scanning ...

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