Name: electric-field control of electronic states in ws2 nanodevices by electrolyte gating
Uploaded: 2018-04-12T13:30:00
Description: Watch this Scientific Journal Video about Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating at JoVE.com

我们承认以下财政支持;资助为特别促进的研究 (25000003) 从 jsp, 资助为研究活动启动 (不 15H06133) 和挑战性的研究 (探索) (不。JP17K18748) 来自日本下个。

1. 在基板上分散 WS 2纳米管 (蚂蚁)
<ol><li>将 WS2 NT 粉末分散为异丙醇 (IPA, 浓度超过 99.8%), 适当稀释率 (约0.1 毫克/毫升) 的超声波为20分钟。 注意: 长时间的超声波有助于使 ws2在 IPA 液体中一致挂起, 并从非晶 WS2或其他的垃圾桶中分离出格式良好的单个 ws2 , 以及删除 ws2上的内存累积表面。图 2b显示 WS2的最终暂停。?...

在 WS2粒子和薄片中, 我们通过静电或电化学载体掺杂成功地控制了电性能。
在静电掺杂区, 双极性晶体管的操作被观察到。在低偏压下观察到高开/关比 (> 102) 的这种双极性传输曲线, 表明在电解质浇注技术的接口上有效的载流子掺杂, 用于调整这些系统的费米水平。
与传统的固体浇注方法相比, 该方法对小栅极偏置中大容量载波数的调整?...

载波数控制是实现固体中量子相变的关键技术1。在传统的场效应晶体管 (FET), 它是通过使用实心闸门1,2实现的。在这种装置中, 电势梯度在介质材料中是均匀的, 因此接口上的诱导载波数是有限的, 如图 1a所示。
另一方面, 通过用离子凝胶/液体或聚合物电解质代替固体介质材料, 我们可以在界面或体积上达到较高的载流子密度3,4,5,6, 7,8,9,10,11 (图 1b)。在离子液体的静电掺杂中, 电双层晶体管 (EDLT) 结构形成于离子液体与样品之间的界面上, 即使在低偏压下也产生强电场 (> 0.5 V/Å)。由此导致的高载波密度 (> 1014 cm-2) 在接口10,12,13引起新的电子属性或量子相变, 如电场 诱导的铁磁性14, 库仑封锁15, 双极性传输 16, 17, 18, 19, 20,21,22,23,24,25,26,27, 形成 p-n 结和结果 electroluminance28,29,30, 热电功率31,32, 电荷密度波和莫特转换33,34,35, 电场感应绝缘子-金属过渡36,37包括电场诱发超导性9 ,10,11,38,39, 40,41,42,43,44 ,45,46,47,48,49。
在电解液浇口 (图 1c) 中, 离子不仅在界面上积聚形成 EDLT, 而且在应用大栅极电压的情况下, 也可以通过热扩散将二维材料插入层中, 而不损坏试样,导致电化学掺杂8,9,11,34,38,50,51,52,53.因此, 我们可以大大改变载波数与传统的场效应晶体管使用实心门。特别是电场诱发的超导性9,11,34,38,50是在大型载波区域使用电解质浇口实现的。我们无法通过传统的固体浇口方法进入的数字。
本文介绍了这种在固体中的载波数控制的独特技术, 概述了半导体 WS2示例中的晶体管操作和电场感应超导性, 如 WS2片和 ws2纳米管54,55,56,57。

<table border="1" fo:keep-together.within-page="1" fo:keep-with-next.within-page="always">
	<tbody>
		<tr>
			<td>Sonication machine</td>
			<td>SND Co., Ltd.</td>
			<td>US-2</td>
			<td>http://www.senjyou.jp/</td>
		</tr>
		<tr>
			<td>Spin-coater machine</td>
			<td>ACTIVE Co.,Ltd.</td>
			<td>ACT-300AII</td>
			<td>http://www.acti-ve.co.jp/spincoater/standard/act300a2.html</td>
		</tr>
		<tr>
			<td>Hot-plate</td>
			<td>TAIYO</td>
			<td>HP131224</td>
			<td>http://www.taiyo-kabu.co.jp/products/detail.php?product_id=431</td>
		</tr>
		<tr>
			<td>Optical Microscopy</td>
			<td>OLYMPUS</td>
			<td>BX51</td>
			<td>https://www.olympus-ims.com/ja/microscope/bx51p/</td>
		</tr>
		<tr>
			<td>Electron Beam Lithography machine</td>
			<td>ELIONIX INC.</td>
			<td>ELS-7500I</td>
			<td>https://www.elionix.co.jp/index.html</td>
		</tr>
		<tr>
			<td>Scribing machine</td>
			<td>TOKYO SEIMITSU CO., LTD.</td>
			<td>A-WS-100A</td>
			<td>http://www.accretech.jp/english/product/semicon/wms/aws100s.html</td>
		</tr>
		<tr>
			<td>Wire-bonding machine</td>
			<td>WEST&#183;BOND&#160;</td>
			<td>7476D-79</td>
			<td>https://www.hisol.jp/products/bonder/wire/mgb/b.html</td>
		</tr>
		<tr>
			<td>Physical Properties Measurement System</td>
			<td>Quantum Design</td>
			<td>PPMS</td>
			<td>http://www.qdusa.com/products/ppms.html</td>
		</tr>
		<tr>
			<td>Lock-in amplifier</td>
			<td>Stanford Research Systems</td>
			<td>SRS830</td>
			<td>http://www.thinksrs.com/products/SR810830.htm</td>
		</tr>
		<tr>
			<td>Source meter</td>
			<td>Textronix</td>
			<td>KEITHLEY 2612A</td>
			<td>http://www.tek.com/keithley-source-measure-units/smu-2600b-series-sourcemeter</td>
		</tr>
		<tr>
			<td>KClO4</td>
			<td>Sigma-Aldrich</td>
			<td>241830</td>
			<td>http://www.sigmaaldrich.com/catalog/product/sigald/241830?lang=ja&#38;region=JP</td>
		</tr>
		<tr>
			<td>PEG</td>
			<td>WAKO</td>
			<td>168-09075</td>
			<td>http://www.siyaku.com/uh/Shs.do?dspCode=W01W0116-0907</td>
		</tr>
		<tr>
			<td>IPA</td>
			<td>WAKO</td>
			<td>169-28121</td>
			<td>http://www.siyaku.com/uh/Shs.do?dspWkfcode=169-28121</td>
		</tr>
		<tr>
			<td>MIBK</td>
			<td>WAKO</td>
			<td>131-05645</td>
			<td>http://www.siyaku.com/uh/Shs.do?dspCode=W01W0113-0564</td>
		</tr>
		<tr>
			<td>PMMA</td>
			<td>MicroChem</td>
			<td>PMMA</td>
			<td>http://microchem.com/Prod-PMMA.htm</td>
		</tr>
		<tr>
			<td>Acetone</td>
			<td>WAKO</td>
			<td>012-26821</td>
			<td>http://www.siyaku.com/uh/Shs.do?dspWkfcode=012-26821</td>
		</tr>
	</tbody>
</table>

electric-field control of electronic states in ws2 nanodevices by electrolyte gating

证明了采用电解液浇注的载波数控制方法。通过使用透明胶带法或单个 WS2纳米管, 分散了 ws2纳米管的悬浮, 得到了 ws2薄片的原子平坦表面。所选样品通过电子束光刻和电解液放在设备上制成器件。我们在应用栅极电压的情况下, 对器件的电子特性进行了表征。在小栅极电压区, 电解液中的离子在样品表面积聚, 导致大电位下降, 并在界面上产生静电载流子掺杂。双极性转移曲线在这个静电掺杂区被观察到。当栅极电压进一步增加时 , 我们又遇到了源漏电流的急剧增加 , 这意味着离子入 WS2层 , 实现了电化学载体掺杂。在这种电化学掺杂区, 超导已被观察到。聚焦技术为实现电磁场诱导的量子相变提供了强有力的策略。

单个 ws2 NT 和 ws2片设备的典型晶体管操作分别显示在图 3a和3b中, 其中源漏电流 (IDS) 作为栅极电压的函数 (V G) 在双极性模式下运行良好, 在以前的出版物58中, 与传统的实心门控场效应的单极栅响应显示出显著的对比.考虑到双极性行为是可逆的和可重复的, 这些晶体管操作可...

Watch this Scientific Journal Video about Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating at JoVE.com

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

在这里, 我们提出了一个协议, 以控制在固体中的载波数使用电解质。

用电解质浇注法对 WS2纳米器件电子态的电场控制

A method of carrier number control by electrolyte gating is demonstrated. We have obtained WS2 thin flakes with atomically flat surface via scotch tape ...

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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

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