Name: a fabrication and measurement method for a flexible ferroelectric element based on van der waals heteroepitaxy
Uploaded: 2018-04-08T14:00:00
Description: Watch this Scientific Journal Video about A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy at JoVE.com

这项工作得到中国国家自然科学基金 (11402221 和11502224号批准)、强脉冲辐射模拟和效果国家重点实验室 (SKLIPR1513) 和湖南省重点研究开发计划 (no。2016WK2014)。

1. 制备柔性 PZT 薄膜
<ol><li>从云母板上剪下1厘米 x 1 厘米的云母基板。</li>
	<li>用双面胶带将这1厘米 x 1 厘米的云母基板固定在办公桌上。</li>
	<li>使用镊子剥离云母层逐层, 直到所需的厚度 (50 µm), 用千分尺测量。</li>
	<li>用薄薄的一层银漆将这个新鲜的云母基板粘贴在 5 "衬底上", 并在热板上固化120摄氏度10分钟, 牢固地将云母附着在基体上。</li>
	<li>将 pld (脉冲激光沉积) 衬底架置于 pld 腔内。</l...

<ol>
	<li>Kim, W. Y., Lee, H. C. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Stable+ferroelectric+poly+(vinylidene+fluoride-trifluoroethylene)+film+for+flexible+nonvolatile+memory+application.">Stable ferroelectric poly (vinylidene fluoride-trifluoroethylene) film for flexible nonvolatile memory application.</a> IEEE Electron Device Letters. 33 (2), 260-262 (2012).</li><li>Mao, D., Quevedo-Lopez, M. A., Stiegler, H., Gnade, B. E., Alshareef, H. N. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Optimization+of+poly(vinylidene+fluoride-trifluoroethylene)+films+as+non-volatile+memory+for+flexible+electronics.">Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics.</a> Organic Electronics. 11 (5), 925-932 (2010).</li><li>Lee, G. 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J. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Epitaxial+Pb(Zr,Ti)O3+thin+films+on+flexible+substrates.">Epitaxial Pb(Zr,Ti)O3 thin films on flexible substrates.</a> Journal of the American Ceramic Society. 94 (10), 3223-3226 (2011).</li><li>Rho, J., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=PbZrxTi1&#8722;xO3+Ferroelectric+thin-film+capacitors+for+flexible+nonvolatile+memory+applications.">PbZrxTi1&#8722;xO3 Ferroelectric thin-film capacitors for flexible nonvolatile memory applications.</a> IEEE Electron Device Letters. 31 (9), 1017-1019 (2010).</li><li>Bretos, I., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Activated+Solutions+Enabling+Low-Temperature+processing+of+functional+ferroelectric+oxides+for+flexible+electronics.">Activated Solutions Enabling Low-Temperature processing of functional ferroelectric oxides for flexible electronics.</a> Advanced Materials. 26 (9), 1405-1409 (2014).</li><li>Tsagarakis, E. D., Lew, C., Thompson, M. O., Giannelis, E. P. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Nanocrystalline+barium+titanate+films+on+flexible+plastic+substrates+via+pulsed+laser+annealing.">Nanocrystalline barium titanate films on flexible plastic substrates via pulsed laser annealing.</a> Applied Physics Letters. 89 (20), 202910-202912 (2006).</li><li>Bakaul, S. R., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=High+speed+epitaxial+perovskite+memory+on+flexible+substrates.">High speed epitaxial perovskite memory on flexible substrates.</a> Advanced Materials. 29 (11), 1605699-1605703 (2017).</li><li>Li, C. I., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Van+der+Waal+epitaxy+of+flexible+and+transparent+VO2+film+on+muscovite.">Van der Waal epitaxy of flexible and transparent VO2 film on muscovite.</a> Chemistry of Materials. 28 (11), 3914-3919 (2016).</li><li>Ma, C. H., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Van+der+Waals+epitaxy+of+functional+MoO2+film+on+mica+for+flexible+electronics.">Van der Waals epitaxy of functional MoO2 film on mica for flexible electronics.</a> Applied Physics Letters. 108 (25), 253104-253108 (2016).</li><li>Bitla, Y., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Oxide+heteroepitaxy+for+flexible+optoelectronics.">Oxide heteroepitaxy for flexible optoelectronics.</a> ACS Applied Materials &amp; Interfaces. 8 (47), 32401-32407 (2016).</li><li>Wu, P. C., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Heteroepitaxy+of+Fe3O4/muscovite:+A+new+perspective+for+flexible+spintronics.">Heteroepitaxy of Fe3O4/muscovite: A new perspective for flexible spintronics.</a> ACS Applied Materials &amp; Interfaces. 8 (49), 33794-33801 (2016).</li><li>Jiang, J., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Flexible+ferroelectric+element+based+on+van+der+Waals+heteroepitaxy.">Flexible ferroelectric element based on van der Waals heteroepitaxy.</a> Science Advances. 3 (6), e1700121-e1700128 (2017).</li><li>Amrillah, T., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Flexible+multiferroic+bulk+heterojunction+with+giant+magnetoelectric+coupling+via+van+der+waals+epitaxy.">Flexible multiferroic bulk heterojunction with giant magnetoelectric coupling via van der waals epitaxy.</a> ACS Nano. 11 (6), 6122-6130 (2017).</li><li>Bitla, Y., Chu, Y. H. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=MICAtronics:+A+new+platform+for+&#64258;exible+X-tronics.">MICAtronics: A new platform for &#64258;exible X-tronics.</a> Flat Chem. 3, 26-42 (2017).</li><li>Chu, Y. H. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Van+der+Waals+oxide+heteroepitaxy.">Van der Waals oxide heteroepitaxy.</a> Quantum Materials. 2 (1), 67-71 (2017).</li></ol>

铁电元件制造的关键步骤在于使用清洁均匀/平坦的基体表面。虽然新剥离的云母表面是原子平滑的, 但有必要注意防止表面遭受可见分裂, 分裂层, 裂纹, 夹杂物,等.在压电陶瓷层沉积后, 试样在高氧压力 (200-500 乇), 以减少氧气空缺。前原位顶铂电极通过预定义的网格沉积, 形成许多 Pt/PZT/SRO 电容器元件。为了进行弯曲试验, 样品附着在一张类似尺寸的纸上, 使样品在不同的模具之间容?...

柔性非易失性记忆元件 (NVME) 的成功制造在充分利用柔性电子的潜力方面发挥着关键作用。除数据存储、信息处理和通信外, NVME 应具有重量轻、成本低、功耗低、速度快、存储密度高等特点。钙钛矿铅 (锆、钛) O3 (PZT) 作为一种普遍应用的系统, 考虑到其大极化、快速极化开关、高居里温度、低胁迫场和高压电系数。在铁电非挥发性存储器中, 外部电压脉冲可以在两个稳定方向之间切换两个残余偏振, 用 "0" 和 "1" 表示。它是非易失性的, 写/读过程可以在纳秒内完成。NVME 基于有机1,2,3,4,5,6 和无机7,8,9,10 、11、12、13、14、15铁电材料已在柔性基板上尝试。然而, 这种集成不仅受到基体的高温生长能力的限制, 而且由于其粗糙的表面而使器件性能下降、电流泄漏和电子短路。尽管有很有希望的结果, 但考虑到复杂的多步骤过程, 诸如衬底8和外延层在柔性基板上传输的交替策略15的生存能力受到限制。转让的不可预测性和有限的适用性。
基于上述原因, 探索合适的基底, 能够克服软基板的有限热和操作稳定性, 进一步推进柔性电子学, 是至关重要的。天然白云母云母 (卡尔2(铝硅 3 O 10) (OH) 2) 基板, 具有原子平滑表面、高热稳定性、化学惰性、高透明度、机械灵活性和与当前制造方法的兼容性可以用来有效地处理这些问题。型单斜云母的二维层状结构支持范德华外延, 减少晶格和热匹配条件, 从而显著抑制基板的夹紧效果。这些优势已被利用在功能氧化物的直接增长16,17,18,19,20,21,22,最近, 由于灵活的设备应用程序, 23在白云母上。
在这里, 我们描述了一个协议, 直接生长外延, 但软钛酸锆 (PZT) 薄膜在白云母云母。这是通过脉冲激光沉积的过程, 依靠云母的多功能性, 导致范德华 heteroepitaxy。这种预制结构在刚性单晶基体上保留了外延 PZT 的所有优越性能, 具有良好的热力学稳定性。这种简单可靠的方法比多步转移和基板细化策略提供了技术上的优势, 并促进了期待已久的灵活但单晶非挥发性内存元素的开发先决条件高性能的下一代智能设备。

<table border="0" cellpadding="0" cellspacing="0" width="1114">
	<tbody>
		<tr height="40">
			<td height="40" style="height:40px;width:216px;">Equipment</td>
			<td style="width:387px;"></td>
			<td style="width:344px;"></td>
			<td style="width:167px;"></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">hot plate</td>
			<td style="width:387px;">Polish</td>
			<td style="width:344px;">P-20</td>
			<td style="width:167px;"></td>
		</tr>
		<tr height="25">
			<td height="25" style="height:25px;">PLD system</td>
			<td>PVD products</td>
			<td>PLD 5000</td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">Ferroelectric test system&#160;</td>
			<td>Radiant Technologies Precisions workstations&#160;</td>
			<td>RT66A</td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">Semiconductor device analyzer&#160;</td>
			<td>Agilent&#160;</td>
			<td>B1500A</td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">Bending molds</td>
			<td>home-made</td>
			<td></td>
			<td>Machined teflon material</td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">Bending stage</td>
			<td>home-built</td>
			<td></td>
			<td>Labview interfaced setup which provides a prescise displacemnt as small as 1 micrometer</td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">Sputtering system</td>
			<td>Beijing&#160;Elaborate</td>
			<td>ETD-3000</td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">Materials</td>
			<td></td>
			<td></td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">mica(001) sheets</td>
			<td>Nilaco corporation&#160;</td>
			<td>990066</td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">conductive silver paint</td>
			<td>Ted Pella, INC</td>
			<td>No.16033</td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">CoFe2O4 target</td>
			<td>Kurt J.Lesker</td>
			<td></td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">SrRuO3 target</td>
			<td>Kurt J.Lesker</td>
			<td></td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">PbZr0.2Ti0.8O3 target</td>
			<td>Kurt J.Lesker</td>
			<td></td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;width:216px;">Pt target</td>
			<td>Hefei Ke jing</td>
			<td></td>
			<td></td>
		</tr>
	</tbody>
</table>

a fabrication and measurement method for a flexible ferroelectric element based on van der waals heteroepitaxy

灵活的非易失性记忆已受到人们的广泛关注, 因为它们适用于未来便携式智能电子设备, 依靠高密度的数据存储和低功耗的功能。然而, 柔性基板上的高质量氧化物非易失性存储器往往受制于材料特性和不可避免的高温加工过程。本文提出了一种在白云母云母上直接生长具有外延但又灵活的钛酸铅锆记忆元素的协议。这种多功能的沉积技术和测量方法使下一代智能设备所必需的灵活而单一晶体的非挥发性存储器元件得以制造。

在步骤1中概述了脉冲激光沉积技术在外延 PZT/SRO/CFO/云母薄膜上的沉积。图 1显示了增长方案,图 2显示了基于 PZT 的实际灵活的 NVM 元素。

机械稳定性是柔性器件应用的一个关键环节。在拉伸和压缩弯曲条件下, 对异质体的宏观铁电性能进行了评价。图 7a</s...

Watch this Scientific Journal Video about A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy at JoVE.com

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

本文提出了一种在白云母云母上直接生长具有外延但又灵活的钛酸铅锆记忆元素的协议。

基于范德华 Heteroepitaxy 的柔性铁电元件制备及测量方法

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