Name: a fabrication and measurement method for a flexible ferroelectric element based on van der waals heteroepitaxy
Uploaded: 2018-04-08T14:00:00
Description: Watch this Scientific Journal Video about A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy at JoVE.com

Dette arbejde blev støttet af National Natural Science Foundation of China (Grant nr. 11402221 og 11502224), staten nøglen laboratorium af intenst pulserende stråling simulering og virkning (SKLIPR1513) og Hunan Provincial nøglen forskning og udviklingsplan (nr. 2016 WK 2014).

1. opdigte fleksible PZT tynde film
<ol><li>Skær 1 cm x 1 cm glimmer substrat fra en glimmerplade med saks.</li>
	<li>Løse denne 1 cm x 1 cm glimmer substrat på et skrivebord med dobbeltklæbende tape.</li>
	<li>Bruge pincet peel-off den glimmer lag-på-lag indtil den ønskede tykkelse (50 µm), målt med en mikrometer.</li>
	<li>Indsæt denne frisk kløvet glimmer substrat på en 5'' substrat indehaveren ved hjælp af et tyndt lag af sølv maling og helbrede det ved 120 ° C på en varmeplade i 10 minutter til at a...

<ol>
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Det vigtigste skridt i fabrikation af ferroelectric elementer ligger i brugen af en ren og endda/fast substrat overflade. Selvom frisk kløvet glimmer overflade er atomically glat, det er nødvendigt at være opmærksom på at forebygge overflader lider synlige opsplitning, split lag, revner, indeslutninger, etc. efter deponering af PZT lag, prøven var afkølet en høj iltkoncentration pres (200-500 Torr) at reducere ilt ledige stillinger. Ex situ top platin elektroder blev deponeret via en foruddefine...

Den succesfulde fabrikation af fleksible nonvolatile hukommelse elementer (NVME) spiller en central rolle i at udnytte det fulde potentiale af fleksible elektronik. NVME indslag letvægts, billig, energibesparende forbrug, hurtig hastighed og høj tæthed storagekapacitet udover datalagring, informationsbehandling og kommunikation. Perovskite Pb (Zr, Ti) O3 (PZT) fungerer som et populært system for sådanne programmer, i betragtning af dens store polarisering, hurtig polarisering skifter, høj Curie temperatur, lav tvangsindgreb felt og høj piezoelektriske koefficient. I ferroelectric nonvolatile erindringer, kan en ekstern spænding puls skifte to rest polariseringer mellem to stabile retninger, repræsenteret af '0' og '1'. Det er ikke-flygtige, og skrive/læse-processen kan fuldføres i nanosekunder. NVME baseret på økologisk1,2,3,4,5,6 og uorganiske7,8,9,10 ,11,12,13,14,15 ferroelectric materialer har været forsøgt på fleksible substrater. Men, denne integration er begrænset af ikke kun substrater manglende evne til høj temperatur vækst, men også den forringede enhed ydeevne, nuværende lækage og elektrisk kortslutning på grund af deres grovere overflader. På trods af lovende resultater, alternative strategier som udtynding af substrat8 og epitaxial lag overførsel på en fleksibel substrat15 lider begrænset levedygtighed i lyset af den avancerede omstændelig proces, det uforudsigelighed af overførsel, og af begrænset anvendelighed.
Af ovennævnte grunde er det kritisk at udforske et passende substrat, der er i stand til at overvinde begrænset termiske og operationelle stabilitet bløde underlag til yderligere fremme fleksible elektronik. En naturlig moskovitiske glimmer (KAl2(AlSi3O10) (OH)2) substrat med unikke funktioner som atomically glatte overflader, høj termisk stabilitet, kemisk inaktive, stor gennemsigtighed, mekanisk fleksibilitet, og kompatibilitet med nuværende fabrikation metoder kan bruges til effektivt at håndtere disse spørgsmål. Mere så understøtter den todimensionale lagdelt struktur af monoclinic glimmer van der Waals epitaxy, der afbøder gitter og termisk matchende betingelser, derved betydeligt undertrykke substrat fastspænding effekt. Disse fordele er blevet udnyttet i den direkte vækst af funktionelle oxider16,17,18,19,20,21,22, 23 på moskovitiske for nylig, i betragtning af fleksibel enhed applikationer.
Heri, beskriver vi en protokol for at direkte vokse epitaxial alligevel fleksibel bly zirconium titanate (PZT) tynd film på moskovitiske glimmer. Dette opnås gennem en pulserende laser deposition proces bygger på de alsidige egenskaber af glimmer, hvilket resulterer i van der Waals heteroepitaxy. Sådanne strukturer er opdigtet bevarer alle de overlegne egenskaber af epitaxial PZT på stive enkelt krystallinsk substrater og udstiller fremragende termisk og mekanisk stabilitet. Denne enkle og pålidelige tilgang giver en teknologisk fordel over multistep-overførsel og substrat udtynding strategier og fremmer udviklingen af meget ventede fleksible endnu single-krystallinsk ikke-flygtig hukommelse elementer forudsætning for fremtidens intelligente enheder med høj ydeevne.

<table border="0" cellpadding="0" cellspacing="0" width="1114">
	<tbody>
		<tr height="40">
			<td height="40" style="height:40px;width:216px;">Equipment</td>
			<td style="width:387px;"></td>
			<td style="width:344px;"></td>
			<td style="width:167px;"></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">hot plate</td>
			<td style="width:387px;">Polish</td>
			<td style="width:344px;">P-20</td>
			<td style="width:167px;"></td>
		</tr>
		<tr height="25">
			<td height="25" style="height:25px;">PLD system</td>
			<td>PVD products</td>
			<td>PLD 5000</td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">Ferroelectric test system&#160;</td>
			<td>Radiant Technologies Precisions workstations&#160;</td>
			<td>RT66A</td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">Semiconductor device analyzer&#160;</td>
			<td>Agilent&#160;</td>
			<td>B1500A</td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">Bending molds</td>
			<td>home-made</td>
			<td></td>
			<td>Machined teflon material</td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">Bending stage</td>
			<td>home-built</td>
			<td></td>
			<td>Labview interfaced setup which provides a prescise displacemnt as small as 1 micrometer</td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">Sputtering system</td>
			<td>Beijing&#160;Elaborate</td>
			<td>ETD-3000</td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">Materials</td>
			<td></td>
			<td></td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">mica(001) sheets</td>
			<td>Nilaco corporation&#160;</td>
			<td>990066</td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">conductive silver paint</td>
			<td>Ted Pella, INC</td>
			<td>No.16033</td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">CoFe2O4 target</td>
			<td>Kurt J.Lesker</td>
			<td></td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">SrRuO3 target</td>
			<td>Kurt J.Lesker</td>
			<td></td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">PbZr0.2Ti0.8O3 target</td>
			<td>Kurt J.Lesker</td>
			<td></td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;width:216px;">Pt target</td>
			<td>Hefei Ke jing</td>
			<td></td>
			<td></td>
		</tr>
	</tbody>
</table>

a fabrication and measurement method for a flexible ferroelectric element based on van der waals heteroepitaxy

Fleksibel ingen-flygtig erindringer har fået megen opmærksomhed, som de er gældende for bærbare smart elektronisk enhed i fremtiden, under påberåbelse af high density datalagring og energibesparende forbrug kapaciteter. Høj kvalitet oxid baseret nonvolatile hukommelse på fleksible substrater er imidlertid ofte begrænset af de materialeegenskaber og den uundgåelige høj temperatur fabrikationsproces. I dette papir foreslås en protokol til direkte vokse et epitaxial men fleksibel bly zirconium titanate hukommelse element på moskovitiske glimmer. Den alsidige deposition teknik og måling metode aktiverer fabrikation af fleksible endnu single-krystallinsk ikke-flygtig hukommelse elementer nødvendige for den næste generation af intelligente enheder.

De epitaxial PZT/SRO/CFO/glimmer tynde film blev deponeret hos pulserende laser deposition teknik som beskrevet i trin 1. Figur 1 viser ordningen vækst og figur 2 viser en faktiske fleksible NVM element baseret på PZT.

Mekanisk stabilitet er et afgørende aspekt af fleksibel enhed ansøgning. Heterostructure mod mekaniske nedbøjning makroskopiske ferroelectri...

Watch this Scientific Journal Video about A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy at JoVE.com

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

I dette papir præsenterer vi en protokol til direkte vokse en epitaxial endnu fleksible bly zirconium titanate hukommelse element på moskovitiske glimmer.

En fabrikation og målemetode for en fleksibel Ferroelectric Element baseret på Van Der Waals Heteroepitaxy

Flexible non-volatile memories have received much attention as they are applicable for portable smart electronic device in the future, relying on ...

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