Name: a fabrication and measurement method for a flexible ferroelectric element based on van der waals heteroepitaxy
Uploaded: 2018-04-08T14:00:00
Description: Watch this Scientific Journal Video about A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy at JoVE.com

Dette arbeidet ble støttet av National Natural Science Foundation i Kina (Grant nr. 11402221 og 11502224), staten nøkkel laboratorium av Intense Pulsed stråling simulering og effekt (SKLIPR1513) og Hunan provinsielle nøkkelen forskning og utviklingsplan (nr. 2016 WK 2014).

1. fabrikere fleksibel PZT tynne filmer
<ol><li>Klippe en 1 cm x 1 cm glimmer substrat fra et glimmer ark med saks.</li>
	<li>Fastsette denne 1 cm x 1 cm glimmer substrat på et skrivebord med dobbeltsidig tape.</li>
	<li>Bruke pinsett for å peel-off den glimmer lag-på-lag til ønsket tykkelse (50 µm), målt med et mikrometer.</li>
	<li>Lim denne ferske kløyvde glimmer substrat på en 5'' underlaget med et tynt lag av sølv maling og kurere det på 120 ° C på en kokeplate minutter feste glimmer på substrat fast....

<ol>
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Det viktigste trinnet i fabrikasjon av ferroelectric elementer ligger i bruk av en ren og selv/flat substrat overflate. Selv om ferske kløyvde glimmer er atomically glatt, er det nødvendig å ta hensyn til å forebygge overflater fra lidelse synlig fliser, delt lag, sprekker, Inneslutninger, etc. etter avsettelsen av PZT laget, prøven var avkjølt en høy oksygen Press (200-500 Torr) å redusere den oksygen stillinger. Ex situ topp platina elektroder var inn via en forhåndsdefinert mesh til mange Pt...

Vellykket fabrikasjon av fleksible nonvolatile minne elementer (NVME) spiller en nøkkelrolle i å utnytte det fulle potensialet av fleksible elektronikk. NVME skal funksjonen lett, lav pris, lav-makt fortæringen, rask hastighet og høy lagringskapasitet tetthet foruten datalagring, informasjonsbehandling og kommunikasjon. Perovskite Pb (Zr, Ti) O3 (PZT) fungerer som et populært system for slike programmer vurderer sin store polarisering, rask polarisering bytte, Curie temperatur, lav tvangsmulkt felt og høy piezoelectric koeffisient. I ferroelectric nonvolatile minner, kan en ekstern spenning puls bytte to rest polarisasjonene mellom to stabil retninger, '0' og '1'. Det er permanent, og skrive/lese prosessen kan fullføres innen nanosekunder. NVME basert på organisk1,,2,,3,,4,,5,,6 og uorganisk7,8,9,10 ,11,12,13,14,15 ferroelectric materialer forsøkt på fleksible underlag. Men er slik integrering begrenset av ikke bare substrater manglende evne til høy temperatur vekst, men også dårligere enheten ytelsen, strøm lekkasje og elektriske shorting på grunn av deres grovere overflater. Til tross for lovende resultater, alternative strategier som fortynning av underlaget8 og epitaxial lag overføringen på en fleksibel substrat15 lide begrenset levedyktighet i lys av sofistikert må prosessen, den uforutsigbarheten av overføring og begrenset anvendbarhet.
For grunnene er det avgjørende å utforske en passende substrat som kan overvinne begrenset termisk og operative stabilitet av mykt underlag å fremme mer fleksibel elektronikk. En naturlig muscovite glimmer (KAl2(AlSi3O10) (OH)2) underlaget med unike funksjoner som atomically glatte overflater, høy temperaturstabilitet, kjemiske inertness, high åpenhet, mekanisk fleksibilitet, og kompatibilitet med gjeldende fabrikasjon metoder kan brukes til å effektivt håndtere disse problemene. Mer så, todimensjonal lagdelt oppbygning monoclinic glimmer støtter van der Waals epitaxy, noe som begrenser gitter og termiske matchende forhold, og dermed betydelig undertrykke underlaget clamping effekt. Disse fordelene har vært utnyttet i direkte veksten av funksjonelle oksider16,17,18,19,20,21,22, 23 på muscovite nylig, i lys av fleksibel enhet søknader.
Her beskriver vi en protokoll for direkte vokse epitaxial men ledelsen zirkonium titanate (PZT) tynne filmer på muscovite glimmer. Dette oppnås gjennom en pulsed laser deponering stole på allsidige egenskapene til glimmer, noe som resulterer i van der Waals heteroepitaxy. Fabrikkert strukturer beholde alle overlegen egenskapene til epitaxial PZT på stive enkelt krystallinsk underlag og utstillinger utmerket termisk og mekanisk stabilitet. Denne enkel og pålitelig tilnærmingen gir en teknologisk fordel over må-overføring og underlaget tynning strategier og forenkler utviklingen av mye ventet fleksibel, men likevel én-krystallinske ikke-flyktig minne elementer forutsetning for neste generasjons smarte enheter med høy ytelse.

<table border="0" cellpadding="0" cellspacing="0" width="1114">
	<tbody>
		<tr height="40">
			<td height="40" style="height:40px;width:216px;">Equipment</td>
			<td style="width:387px;"></td>
			<td style="width:344px;"></td>
			<td style="width:167px;"></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">hot plate</td>
			<td style="width:387px;">Polish</td>
			<td style="width:344px;">P-20</td>
			<td style="width:167px;"></td>
		</tr>
		<tr height="25">
			<td height="25" style="height:25px;">PLD system</td>
			<td>PVD products</td>
			<td>PLD 5000</td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">Ferroelectric test system&#160;</td>
			<td>Radiant Technologies Precisions workstations&#160;</td>
			<td>RT66A</td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">Semiconductor device analyzer&#160;</td>
			<td>Agilent&#160;</td>
			<td>B1500A</td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">Bending molds</td>
			<td>home-made</td>
			<td></td>
			<td>Machined teflon material</td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">Bending stage</td>
			<td>home-built</td>
			<td></td>
			<td>Labview interfaced setup which provides a prescise displacemnt as small as 1 micrometer</td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">Sputtering system</td>
			<td>Beijing&#160;Elaborate</td>
			<td>ETD-3000</td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">Materials</td>
			<td></td>
			<td></td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">mica(001) sheets</td>
			<td>Nilaco corporation&#160;</td>
			<td>990066</td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">conductive silver paint</td>
			<td>Ted Pella, INC</td>
			<td>No.16033</td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">CoFe2O4 target</td>
			<td>Kurt J.Lesker</td>
			<td></td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">SrRuO3 target</td>
			<td>Kurt J.Lesker</td>
			<td></td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">PbZr0.2Ti0.8O3 target</td>
			<td>Kurt J.Lesker</td>
			<td></td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;width:216px;">Pt target</td>
			<td>Hefei Ke jing</td>
			<td></td>
			<td></td>
		</tr>
	</tbody>
</table>

a fabrication and measurement method for a flexible ferroelectric element based on van der waals heteroepitaxy

Fleksibel permanent minner har fått mye oppmerksomhet som de er anvendelig for Transportabel smart elektronisk enhet i fremtiden, stole på høy tetthet datalagring og lavt strømforbruk evner. Men er høy kvalitet oksid basert nonvolatile minnet på fleksible underlag ofte begrenset av beskaffenhet og uunngåelig høy temperatur fabrikasjon prosessen. I denne utredningen foreslås en protokoll direkte vokse et epitaxial ennå fleksibel bly zirkonium titanate minne element på muscovite glimmer. Allsidig deponering teknikk og måling metoden aktiverer fabrikasjon av fleksibel, men likevel én-krystallinske ikke-flyktig minne elementer nødvendig for neste generasjon av smarte enheter.

De epitaxial PZT/SRO/CFO/glimmer tynne filmene ble avsatt med pulsed laser deponering teknikk som beskrevet i trinn 1. Figur 1 viser vekst ordningen og figur 2 viser et faktisk fleksibel NVM element basert på PZT.

Mekanisk stabilitet er et viktig aspekt ved fleksibel enhet programmet. Makroskopisk ferroelectric ytelsen til heterostructure mot mekanisk bøye ble...

Watch this Scientific Journal Video about A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy at JoVE.com

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

I dette papiret presenterer vi en protokoll direkte vokse en epitaxial ennå fleksibel bly zirkonium titanate minne element på muscovite glimmer.

En fabrikasjon og målemetode gir et fleksibelt Ferroelectric basert på Van Der Waals Heteroepitaxy

Flexible non-volatile memories have received much attention as they are applicable for portable smart electronic device in the future, relying on ...

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