Name: generation and coherent control of pulsed quantum frequency combs
Uploaded: 2018-06-08T13:00:00
Description: Watch this Scientific Journal Video about Generation and Coherent Control of Pulsed Quantum Frequency Combs at JoVE.com

Wir danken R. Helsten für technische Erkenntnisse; P. Kung von QPS Photronics für die Hilfe und Datenverarbeitungsanlagen; sowie QuantumOpus und N. Bertone Optoelektronik Komponenten für ihre Unterstützung und für die uns mit State-of-the-Art-Photon-Detektoren. Diese Arbeit wurde ermöglicht durch die folgenden Finanzierungsquellen: Naturwissenschaften und Technik Forschung Rat von Kanada (NSERC) (Steacie, strategische, Entdeckung und Beschleunigung Zuschüsse Systeme, Vanier Canada Graduate Stipendien, USRA-Stipendium); MITACS (IT06530) und PBEEE (207748); MESI PSR-SIIRI Initiative; Kanada Forschungsprogramm Stuhl; Australische Forschungsprojekte des Rates Entdeckung (DP150104327); Europäischen Union Horizont 2020 Forschungs- und Innovationsprogramm unter Marie Sklodowska-Curie gewähren (656607); CityU SRG-Fd-Programm (7004189); Strategische Priorität Forschungsprogramm von der chinesischen Akademie der Wissenschaften (XDB24030300); Programm "Menschen" (Marie-Curie-Maßnahmen) des RP7-Programm der Europäischen Union unter REA Finanzhilfevereinbarung INCIPIT (PIOF-GA-2013-625466); Regierung der Russischen Föderation durch die ITMO Fellowship und Professur Programm (Grant 074-U-01); Programm 1000 Talente Sichuan (China)

1. Generation des hochdimensionalen Frequenz-Kastens verstrickt Staaten über gepulste Anregung
<ol><li>Im Anschluss an das Schema in Abbildung 2 (Erzeugungsstufe) beschrieben verbinden Sie jede Komponente mit Lichtleitfasern Polarisation-Pflege (für verbesserte Umweltstabilität).</li>
	<li>Verbinden Sie ein Netzteil mit der Amplitude der elektrooptischen Modulator und wenden Sie einen DC-Spannung-Offset tuning des Offset-Werts, bis die optische Leistung durch es übertragen etwa halbier...

<ol>
	<li>Kimble, H. J. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=The+quantum+internet.">The quantum internet.</a> Nature. 453 (7198), 1023-1030 (2008).</li><li>Knill, E., Laflamme, R., Milburn, G. J. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=A+scheme+for+efficient+quantum+computation+with+linear+optics.">A scheme for efficient quantum computation with linear optics.</a> Nature. 409 (6816), 46-52 (2001).</li><li>Israel, Y., Rosen, S., Silberberg, Y. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Supersensitive+Polarization+Microscopy+Using+NOON+States+of+Light.">Supersensitive Polarization Microscopy Using NOON States of Light.</a> Physical Review Letters. 112 (10), 103604 (2014).</li><li>Ladd, T. 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A. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Mode-locking+of+lasers.">Mode-locking of lasers.</a> IEEE Journal on Selected Topics in Quantum Electronics. 6 (6), 1173-1185 (2000).</li><li>Walmsley, I., Raymer, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Toward+Quantum-Information+Processing+with+Photons.">Toward Quantum-Information Processing with Photons.</a> Science. 307, 1733-1735 (2005).</li><li>Olislager, L., Woodhead, E., Phan Huy, K., Merolla, J. 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L., Lipson, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=New+CMOS-compatible+platforms+based+on+silicon+nitride+and+Hydex+for+nonlinear+optics.">New CMOS-compatible platforms based on silicon nitride and Hydex for nonlinear optics.</a> Nature Photonics. 7 (8), 597-607 (2013).</li><li>Caspani, L., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Integrated+sources+of+photon+quantum+states+based+on+nonlinear+optics.">Integrated sources of photon quantum states based on nonlinear optics.</a> Light: Science &amp; Applications. 6 (11), e17100 (2017).</li><li>Guo, X., Zou, C., Schuck, C., Jung, H., Cheng, R., Tang, H. X. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Parametric+down-conversion+photon-pair+source+on+a+nanophotonic+chip.">Parametric down-conversion photon-pair source on a nanophotonic chip.</a> Light: Science &amp; Applications. 6 (5), e16249 (2016).</li><li>Jiang, W. C., Lu, X., Zhang, J., Painter, O., Lin, Q. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Silicon-chip+source+of+bright+photon+pairs.">Silicon-chip source of bright photon pairs.</a> Optics Express. 23 (16), 20884 (2015).</li><li>Xiong, C., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Slow-light+enhanced+correlated+photon+pair+generation+in+a+silicon+photonic+crystal+waveguide.">Slow-light enhanced correlated photon pair generation in a silicon photonic crystal waveguide.</a> Optics Letters. 36 (17), 3413 (2011).</li><li>Kumar, R., Ong, J. R., Savanier, M., Mookherjea, S. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Controlling+the+spectrum+of+photons+generated+on+a+silicon+nanophotonic+chip.">Controlling the spectrum of photons generated on a silicon nanophotonic chip.</a> Nature communications. 5, 5489 (2014).</li><li>Shan, X., Cleland, D., Ellis, A. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Stabilising+Er+fibre+soliton+laser+with+pulse+phase+locking.">Stabilising Er fibre soliton laser with pulse phase locking.</a> Electronics Letters. 28 (2), 182 (1992).</li><li>Shan, X., Spirit, D. 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Die optischen Frequenzbereich über QFCs, ist vorteilhaft in Quanten-Anwendungen für eine Vielzahl von Gründen. Operationen sind global, handeln auf allen Staaten gleichzeitig, die Ergebnisse in einem Design, das nicht in der Größe oder Komplexität mit zunehmender Staat Dimensionalität skaliert wird. Dies wird verbessert, da die Komponenten on-the-Fly ohne Änderung der Einstellungen neu konfiguriert werden und sind in der Lage können, auf dem Chip integrierte durch Ausnutzung der vorhandenen und/oder Halbleiter u...

Die Kontrolle der Quantenphänomene eröffnet die Möglichkeit für neue Anwendungen in so unterschiedlichen Bereichen wie sichere Quanten Kommunikation1, leistungsstarke Quantum Informationsverarbeitung2und Quantum sensing3. Während eine Vielzahl von physischen Plattformen sind für die Erkenntnisse der Quantenphysik Technologien4aktiv erforscht, sind optische Quantenzustände wichtige Kandidaten wie sie mal lange Kohärenz und Stabilität von Außenlärm, ausgezeichnete aufweisen können Übertragungseigenschaften sowie Kompatibilität mit bestehenden Telekommunikations- und Silizium-Chip (CMOS)-Technologien.
In Richtung voll erkannte das Potenzial von Photonen für Quantentechnologien, kann durch den Einsatz mehrerer verwickelten Parteien und/oder High-Dimensionalität Zustand Komplexität und Informationsgehalt erhöht werden. Allerdings fehlt die auf Chip-Generation solcher optischen Staaten Praktikabilität Setups sind kompliziert, nicht perfekt skalierbare bzw. hochspezialisierten Komponenten verwenden. Insbesondere hochdimensionalen Pfad-Verstrickung erfordert <img alt="Equation 01" src="/files/ftp_upload/57517/57517eq01v3.jpg"> zusammenhängend aufgeregt identisch Quellen und aufwendige Schaltungen der Strahlteiler5 (wo <img alt="Equation 01" src="/files/ftp_upload/57517/57517eq01v3.jpg"> ist die Staat Dimensionalität), während Zeit-Verstrickung komplexe braucht Multi-Arm Interferometer6. Bemerkenswert ist, der Frequenzbereich eignet sich gut für die skalierbare Erzeugung und Steuerung komplexer Zustände, dargestellt durch seine jüngsten Ausbeutung in Quantum Frequenz Kämme (QFC)7,8 mit einer Kombination aus integrierten Optik und Telekommunikations-Infrastrukturen9, und bietet einen viel versprechenden Rahmen für zukünftige Quantum Information Technologies.
Auf dem Chip QFCs entstehen integrierte Micro-Hohlräume nichtlineare optische Effekte bei. Mit solchen nichtlinearen Mikro-Resonator, sind zwei verschränkte Photonen (angegeben als Signal und Müßiggänger) produziert durch spontane vier-Wellen-mischen, über die Vernichtung der beiden Erregung Photonen - mit dem daraus resultierenden Paar in einer Überlagerung der Kavität erzeugt gleichmäßig verteilt Resonanzfrequenz Modi (Abbildung 1). Wenn es Kohärenz zwischen den einzelnen Frequenz-Modi, ist ein Frequenz-bin verstrickt Staat gegründeten10, die oft als eine modengekoppelten zwei Photon staatliche11bezeichnet wird. Dieser Zustand Wellenfunktion kann durch beschrieben werden:
<img alt="Equation 02" src="/files/ftp_upload/57517/57517eq02v3.jpg">
Hier, <img alt="Equation 03" src="/files/ftp_upload/57517/57517eq03v3.jpg"> und <img alt="Equation 04" src="/files/ftp_upload/57517/57517eq04v3.jpg"> sind die Monomode-Frequenz Müßiggänger und Komponenten, bzw. signal und <img alt="Equation 05" src="/files/ftp_upload/57517/57517eq05v3.jpg"> ist die Wahrscheinlichkeit Amplitude für die <img alt="Equation 06" src="/files/ftp_upload/57517/57517eq06v3.jpg"> </img>-ten Signal-Faulenzer-Modus Paar.
Früheren Demonstrationen auf dem Chip QFCs markieren Sie ihre Vielseitigkeit als tragfähige Quantum Informationsplattformen und umfassen Waben korrelierte Photonen12, Kreuz-polarisierte Photonen13, verschränkte Photonen14,15 , 16, Multi-Photonen erklärt15, und Frequenz-bin verstrickt Staaten9,17. Hier bieten wir einen detaillierten Überblick über die QFC-Plattform und ein Protokoll für hochdimensionale Frequenz-bin verstrickt, optische State-Erzeugung und Kontrolle.
Künftigen Anwendungen, insbesondere solche mit High-Speed-Elektronik (für die zeitgerechte Informationsverarbeitung), verbunden sein Verlangen die Hochrate-Generation von hochreinen Photon Staaten in einem kompakten und stabilen Aufbau. Wir verwenden eine aktiv-Modus gesperrt, geschachtelte Hohlraum-Schema, um QFCs in der Telekommunikation S, C und L Frequenzbänder zu produzieren. Ein Mikro-Ring ist in einem größeren gepulste Laser Hohlraum, mit optische Verstärkung (bereitgestellt von einem Erbium-dotierte Faser-Verstärker, EDFA) gefiltert, um die Mikro-Ring Erregung Bandbreite18übereinstimmen integriert. Modus-Verriegelung wird aktiv über Elektro-optische Modulation der Kavität Verluste19realisiert. Ein Isolator sorgt dafür, dass Puls Ausbreitung eine einzige Richtung folgt. Die daraus resultierende Impulsfolge hat sehr niedrige Root-Mean-Square (RMS) Lärm und Ausstellungen einstellbaren Wiederholraten und Puls Befugnisse. Hohe Isolation Notch-Filter trennt die emittierten QFC Photonen aus dem Bereich der Erregung. Diese einzelnen Photonen werden dann durch Fasern für Kontrolle und Nachweis geführt.
Unsere Regelung ist ein Schritt in Richtung einer hohen Generation-Rate, kompakte QFC Quelle, da alle verwendete Komponenten möglicherweise auf einem photonischen Chip integriert werden können. Darüber hinaus ist gepulste Anregung besonders gut geeignet für Quanten-Anwendungen. Erstens erzeugt mit Blick auf ein paar Micro-Cavity Resonanzen symmetrisch zu der Anregung, es zwei-Photonen-Staaten, wo jedes Photon ist gekennzeichnet durch eine Einzel-Frequenz Modus – Zentrale für lineare optische Quantencomputer20. Darüber hinaus können Multi-Photonen-Staaten durch höhere Macht Erregung Regimes und Auswählen von mehreren Signal-Faulenzer Paare15erzeugt werden. Zweitens wie Photonen in bekannten Zeitfenster entsprechend der gepulsten Anregung emittiert werden, Nachbearbeitung und Anspritzung realisierbar um Zustand Erkennung zu verbessern. Vielleicht unterstützt vor allem unsere hohen Raten von Photon Staaten mit harmonischen Modus-Verriegelung, ohne Verringerung der Zufall zu zufälligen Verhältnis (Auto) – das könnte den Weg für High-Speed-, multi-Channel Quanteninformation Technologien.
Um die Auswirkungen und die Machbarkeit der Frequenz-Domäne zu demonstrieren, muss die Kontrolle der QFC Staaten auf gezielte Weise, hocheffiziente Transformationen und Staat Kohärenz zu gewährleisten durchgeführt werden. Um diesen Anforderungen gerecht zu werden, verwenden wir kaskadierten programmierbare Filter und Phase Modulatoren – bewährte Komponenten in der Telekommunikationsbranche. Programmierbare Filter lässt sich eine beliebige spektralen Amplitude und Phase Maske auf die einzelnen Photonen mit einer Auflösung ausreichend, um jede Frequenzmodus individuell anzusprechen zu verhängen; und Phase elektrooptische Modulatoren angetrieben durch Radiofrequenz (RF) Signalgeneratoren ermöglichen das Mischen von Frequenz Komponenten21.
Der wichtigste Aspekt dieser Regelung ist, dass sie auf alle Quantum-Modi der Photonen gleichzeitig in einem einzigen räumlichen Modus, über einzelne Bedienelemente arbeitet. Erhöhung der Quantenzustand Dimensionalität führt nicht zu einer Erhöhung der Setup-Komplexität, im Gegensatz zu Weg-Zeit bin Verschränkung Systeme. Darüber hinaus sind alle Komponenten extern rekonfigurierbare (d. h. die Vorgänge verändert werden können, ohne eine Änderung das Setup) und bestehende Telekommunikationsinfrastruktur zu verwenden. So können bestehende und kommende Entwicklungen auf dem Gebiet der ultraschnelle optische Verarbeitung direkt an die skalierbare Steuerung von Quantenzuständen in Zukunft übertragen werden.
Zusammenfassend lässt sich sagen die Ausbeutung der Frequenzbereich von QFCs unterstützt die Hochrate-Generation von komplexen Quantenzustände und deren Kontrolle, und eignet sich somit für die Nutzung komplexer Zustände auf praktische und skalierbare Quantentechnologien.

<table>
	<tbody>
		<tr>
			<td>Superconducting Nanowire Single-Photon Detector System</td>
			<td>Quantum Opus</td>
			<td>Opus One</td>
			<td></td>
		</tr>
		<tr>
			<td>Electro-optic phase modulator</td>
			<td>EO-Space</td>
			<td>Low loss model</td>
			<td></td>
		</tr>
		<tr>
			<td>Programmable filter</td>
			<td>Finisar&#160;</td>
			<td>WaveShaper 4000s</td>
			<td></td>
		</tr>
		<tr>
			<td>Timing electronics</td>
			<td>PicoQuant</td>
			<td>HydraHarp 400</td>
			<td></td>
		</tr>
		<tr>
			<td>Micro-ring resonator</td>
			<td></td>
			<td></td>
			<td>200 GHz FSR micro-ring resonator made from high refractive index glass. See Ref. 24 for platform details.</td>
		</tr>
		<tr>
			<td>Erbium-doped fiber amplifier</td>
			<td>Keopsys</td>
			<td>PEFA-SP-C-PM-27-B202-FA-FA</td>
			<td></td>
		</tr>
		<tr>
			<td>Electro-optic amplitude modulator</td>
			<td>Oclaro&#160;</td>
			<td>SD40</td>
			<td></td>
		</tr>
		<tr>
			<td>RF tone source</td>
			<td>Rohde &#38; Schwarz</td>
			<td>SMP 04</td>
			<td></td>
		</tr>
		<tr>
			<td>RF tone amplifier</td>
			<td>RF-Lambda</td>
			<td>RFLUPA27G34GA</td>
			<td></td>
		</tr>
		<tr>
			<td>Function generator</td>
			<td>Tetronix</td>
			<td>AFG 3251</td>
			<td></td>
		</tr>
		<tr>
			<td>Isolator</td>
			<td>General Photonics</td>
			<td>NISO-S-15-SS-FC/APF</td>
			<td></td>
		</tr>
		<tr>
			<td>Oscilloscope</td>
			<td>Tetronix&#160;</td>
			<td>TDS5052B</td>
			<td></td>
		</tr>
		<tr>
			<td>Photodiode</td>
			<td>Finisar</td>
			<td>XPDV 50 GHz</td>
			<td></td>
		</tr>
		<tr>
			<td>DWDM</td>
			<td>OptiWorks</td>
			<td>DWFUQUMD08BN</td>
			<td></td>
		</tr>
		<tr>
			<td>Power supply</td>
			<td>Madell</td>
			<td>CA18303D</td>
			<td></td>
		</tr>
	</tbody>
</table>

generation and coherent control of pulsed quantum frequency combs

Wir präsentieren eine Methode zur Erzeugung und kohärente Manipulation von Frequenzkämmen gepulster Quanten. Bis jetzt sind Methoden zur Vorbereitung hochdimensionalen Staaten auf Chip auf praktische Weise schwer aufgrund der zunehmenden Komplexität der Quanten-Schaltung zur Vorbereitung und Verarbeitung solcher Staaten geblieben. Hier beschreiben wir wie hochdimensionalen, Frequenz-bin verstrickt, zwei-Photonen-Staaten können durch erzeugt werden mit einer stabilen, Generation Rate eine verschachtelte Hohlraum, aktiv modengekoppelten Anregung von nicht-linearen Mikro-Kavitäten. Diese Technik wird verwendet, um gepulste Quantum Frequenzkämmen produzieren. Darüber hinaus präsentieren wir wie die Quantenzustände kohärent sein kann mit standard Telekommunikation Komponenten wie programmierbare Filter und elektrooptische Modulatoren manipuliert. Insbesondere zeigen wir im Detail wie Zustand Charakterisierung Messungen wie Dichte Matrix Rekonstruktion, koinzidenzerkennung und einzelnes Photon Spektrum Bestimmung zu erreichen. Die vorgestellten Methoden bilden eine zugängliche, rekonfigurierbare und skalierbare Grundlage für komplexe hochdimensionalen Staat Vorbereitung und Manipulation Protokolle im Frequenzbereich.

Die skizzierten Schema für die Erzeugung und die Kontrolle der hochdimensionalen Frequenz-bin Staaten (basierend auf der Anregung von nicht-linearen Mikro-Hohlräumen, Abbildung 1) ist in Abbildung 2dargestellt. Dieses Setup verwendet standard Telekommunikation Komponenten und ist sehr flexibel in der Photon-Produktion-Rate und die Verarbeitungen angewendet. Abbildung 3 zeigt die Charakterisierung d...

Watch this Scientific Journal Video about Generation and Coherent Control of Pulsed Quantum Frequency Combs at JoVE.com

Generation and Coherent Control of Pulsed Quantum Frequency Combs

Ein Protokoll ist für die praktische Erzeugung und kohärente Manipulation von hochdimensionalen Frequenz-bin verstrickt Photon Staaten mit integrierten Mikro-Hohlräumen und standard Telekommunikation Komponenten bzw. vorgestellt.

Generation und kohärente Steuerung der gepulsten Quantum Frequenzkämmen

We present a method for the generation and coherent manipulation of pulsed quantum frequency combs. Until now, methods of preparing high-dimensional ...

The overall goal of this protocol is to generate and coherently control pulsed quantum frequency combs which may be used for quantum information processing. This method can help us provide the tools for fundamental investigations of quantum mechanics and for realizing non-classical technologies, such as quantum communications and information processing. The main advantage of this technique is that well-established telecommunications components and protocols are used to generate and control complex optical quantum states in a reconfigurable and scalable way.We have this idea when we talk with my colleague Jose Azana who is an expert in telecommunication processing, and we realized that we could transfer these tools to the world of quantum objects. Set up the components of the system on an optical table. The system has stages for generation, control, and processing.This depiction provides an overview. All elements are connected with polarization maintaining optical fiber. For now, focus on the generation stage.This stage features an on chip micro-ring resonator embedded in a larger external cavity. The external cavity is made of an electro-optic amplitude modulator driven by a signal generator, an isolator, and an erbium-doped fiber amplifier providing optical gain. There is a narrow filter with a pass band selecting a single microcavity resonance and a notch filter routing the generated photons to the control section.With the cavity disconnected, initiate the erbium-doped fiber amplifier. Use an optical power meter after the amplitude modulator to measure the transmitted power. At the modulator, use a power supply to apply a DC offset to have the transmitted power.Reconnect the cavity and insert a fast photo diode into a different ring port. Use an oscilloscope to observe its signal in the time domain. Without the modulator activated, the output will show unstable pulse operation with a low quality pulse train.Return to the amplitude modulator and connect the function generator. Set the output frequency of the generator to a multiple of the approximate external cavity mode spacing. Selecting a rectangular or sine waveform and turn on the function generator.Tune the function generator frequency and DC offset to optimize and stabilize the pulse train on the oscilloscope. Manually adjust the gain to set the pulse intensity. The non-linear four wave mixing process inside the ring resonator now creates signal and idler photon pairs which will leave the external cavity at the notch filter.Connect the synchronization signal from the function generator to the timing electronics. The generation rate of this pulsed quantum frequency comb may be increased by driving the modulator a higher harmonics of the external cavity frequency spacing, thus entering a harmonic mode locking machine. The amplifier gain must then also be increased to ensure the same power per pulse.After the notch filter in the generation stage, the entangled photons enter the control stage. There, in order, they encounter a programmable filter, a phase modulator, and a second programmable filter. First, program the filters.Set the amplitude of the desired frequency mode channels and attenuate the others. Similarly, decide on the desired phase mask. Do this for each filter.This image represents the amplitude and phase for a coincidence measurement. To prepare the phase modulator, connect the signal generator to the RF amplifier with low loss cables. Then connect the RF amplifier to the phase modulator.Once all the RF ends are connected and terminated, bias the amplifier. Set the RF signal generator to create sidebands which overlap with the desired frequency modes, then turn it on. As a test, set up the system to send a continuous wave laser beam through the phase modulator.Use an optical spectrum analyzer to check that the input spectrum produces an output spectrum that corresponds to the intended modulation for the experiment. To continue, connect the phase modulator with the programmable filters. When setting the phase modulation pattern, it is important to determine what pattern will create the targeted frequency sidebands for the chosen operation.This will depend on the dimension of the quantum state used and on microcavity resonance spacing. The photon pairs from the generation stage enter the control stage. The first filter sets the programmed amplitude and phase.Next, the phase modulator creates the necessary frequency sidebands. The second filter selects the signal and idler pair. On input to the processing stage, separate the entangled photons with a dense wavelength division multiplexer.From there, they each go to single photon detectors. Record the arrival time of each photon using timing electronics set up for coincidence measurement. The setup allows coherent control over the photon states.Here frequency sidebands are generated via phase modulation. The sideband spacing and amplitudes are determined by the modulating signal. Coherent control of the photon state can be used for quantum state tomography.This is an example reconstruction of the state density matrix for a two photon system with a dimensionality of three for each photon. The fidelity between the measured and maximally entangled states is about 81%The pulsed high repetition rate generation technique is not limited to micro-ring resonators and may be adopted for other optical cavities, such as photonic crystal waveguides, microdisks, and second-order nonlinear cavities. With its development, the platform combines established techniques in telecommunications with quantum technologies towards potential applications, like secure communications at high rates over multiplex channels or high-dimensional quantum operations.

generation-and-coherent-control-of-pulsed-quantum-frequency-combs

Research

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Unit 1

Frequency Response

SCIENTISTS IN ACTION

Fabrication of Nano-engineered Transparent Conducting Oxides by Pulsed Laser Deposition

Nanosecond Pulsed Laser Deposition (PLD) in the presence of a background gas allows the deposition of metal oxides with tunable morphology, structure, density and stoichiometry by a proper control of the plasma plume expansion dynamics. Such versatility can be exploited to produce nanostructured films from compact and dense to nanoporous characterized by a hierarchical assembly of nano-sized clusters. In particular we describe the detailed methodology to fabricate two types of Al-doped ZnO (AZO) films as transparent electrodes in photovoltaic devices: 1) at low O2 pressure, compact films with electrical conductivity and optical transparency close to the state of the art transparent conducting oxides (TCO) can be deposited at room temperature, to be compatible with thermally sensitive materials such as polymers used in organic photovoltaics (OPVs); 2) highly light scattering hierarchical structures resembling a forest of nano-trees are produced at higher pressures. Such structures show high Haze factor (&gt;80%) and may be exploited to enhance the light trapping capability. The method here described for AZO films can be applied to other metal oxides relevant for technological applications such as TiO2, Al2O3, WO3 and Ag4O4.

We describe the experimental method to deposit nanostructured oxide thin films by nanosecond Pulsed Laser Deposition (PLD) in the presence of a background gas. By using this method Al-doped ZnO (AZO) films, from compact to hierarchically structured as nano-tree forests, can be deposited.

Herstellung von transparenten leitenden Oxide durch Pulsed Laser Deposition Nano-engineered

Nanosecond Pulsed  Laser Deposition (PLD) in the presence of a background gas allows the deposition  of metal oxides with tunable morphology, structure, ...

Forschung

Ingenieurwesen

Gradient Echo Quantum Memory in Warm Atomic Vapor

Gradient echo memory (GEM) is a protocol for storing optical quantum states of light in atomic ensembles. The primary motivation for such a technology is that quantum key distribution (QKD), which uses Heisenberg uncertainty to guarantee security of cryptographic keys, is limited in transmission distance. The development of a quantum repeater is a possible path to extend QKD range, but a repeater will need a quantum memory. In our experiments we use a gas of rubidium 87 vapor that is contained in a warm gas cell. This makes the scheme particularly simple. It is also a highly versatile scheme that enables in-memory refinement of the stored state, such as frequency shifting and bandwidth manipulation. The basis of the GEM protocol is to absorb the light into an ensemble of atoms that has been prepared in a magnetic field gradient. The reversal of this gradient leads to rephasing of the atomic polarization and thus recall of the stored optical state. We will outline how we prepare the atoms and this gradient and also describe some of the pitfalls that need to be avoided, in particular four-wave mixing, which can give rise to optical gain.

The gradient echo memory is a protocol for storing optical quantum states of light in atomic ensembles. Quantum memory is a key element of a quantum repeater, which can extend the range of quantum key distribution. We outline the operation of the scheme when implemented in a 3-level atomic ensemble.

Gradient Echo Quantum Speicher in Warm Atomic Vapor

Gradient  echo memory (GEM) is a protocol for storing optical quantum states of light in  atomic ensembles. The primary motivation for such a technology ...

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

A quantum computer is a computer composed of quantum bits (qubits) that takes advantage of quantum effects, such as superposition of states and entanglement, to solve certain problems exponentially faster than with the best known algorithms on a classical computer. Gate-defined lateral quantum dots on GaAs/AlGaAs are one of many avenues explored for the implementation of a qubit. When properly fabricated, such a device is able to trap a small number of electrons in a certain region of space. The spin states of these electrons can then be used to implement the logical 0 and 1 of the quantum bit. Given the nanometer scale of these quantum dots, cleanroom facilities offering specialized equipment- such as scanning electron microscopes and e-beam evaporators- are required for their fabrication. Great care must be taken throughout the fabrication process to maintain cleanliness of the sample surface and to avoid damaging the fragile gates of the structure. This paper presents the detailed fabrication protocol of gate-defined lateral quantum dots from the wafer to a working device. Characterization methods and representative results are also briefly discussed. Although this paper concentrates on double quantum dots, the fabrication process remains the same for single or triple dots or even arrays of quantum dots. Moreover, the protocol can be adapted to fabricate lateral quantum dots on other substrates, such as Si/SiGe.

This paper presents a detailed fabrication protocol for gate-defined semiconductor lateral quantum dots on gallium arsenide heterostructures. These nanoscale devices are used to trap few electrons for use as quantum bits in quantum information processing or for other mesoscopic experiments such as coherent conductance measurements.

Nanofabrication von Tor-definiert GaAs / AlGaAs Lateral Quantum Dots

A quantum computer is a computer composed of quantum bits (qubits) that takes advantage of quantum effects, such as superposition of states and ...

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Single GaN nanowire (NW) devices fabricated on SiO2 can exhibit a strong degradation after annealing due to the occurrence of void formation at the contact/SiO2 interface. This void formation can cause cracking and delamination of the metal film, which can increase the resistance or lead to a complete failure of the NW device. In order to address issues associated with void formation, a technique was developed that removes Ni/Au contact metal films from the substrates to allow for the examination and characterization of the contact/substrate and contact/NW interfaces of single GaN NW devices. This procedure determines the degree of adhesion of the contact films to the substrate and NWs and allows for the characterization of the morphology and composition of the contact interface with the substrate and nanowires. This technique is also useful for assessing the amount of residual contamination that remains from the NW suspension and from photolithographic processes on the NW-SiO2 surface prior to metal deposition. The detailed steps of this procedure are presented for the removal of annealed Ni/Au contacts to Mg-doped GaN NWs on a SiO2 substrate.

A technique was developed that removes Ni/Au contact metal films from their substrate to allow for the examination and characterization of the contact/substrate and contact/NW interfaces of single GaN nanowire devices.

Die Analyse der Kontaktschnittstellen für Einzel GaN-Nanodraht-Geräte

Single GaN nanowire (NW) devices fabricated on SiO2 can exhibit  a strong degradation after annealing due to the  occurrence of void formation at the ...

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Since their development in the late 1980s, cheap, reliable external cavity diode lasers (ECDLs) have replaced complex and expensive traditional dye and Titanium Sapphire lasers as the workhorse laser of atomic physics labs1,2. Their versatility and prolific use throughout atomic physics in applications such as absorption spectroscopy and laser cooling1,2 makes it imperative for incoming students to gain a firm practical understanding of these lasers. This publication builds upon the seminal work by Wieman3, updating components, and providing a video tutorial. The setup, frequency locking and performance characterization of an ECDL will be described. Discussion of component selection and proper mounting of both diodes and gratings, the factors affecting mode selection within the cavity, proper alignment for optimal external feedback, optics setup for coarse and fine frequency sensitive measurements, a brief overview of laser locking techniques, and laser linewidth measurements are included.

This is an instructional paper to guide the construction and diagnostics of external cavity diode lasers (ECDLs), including component selection and optical alignment, as well as the basics of frequency reference spectroscopy and laser linewidth measurements for applications in the field of atomic physics.

Konstruktion und Charakterisierung von External Cavity Diode Laser für die Atomphysik

Since their development in the late 1980s, cheap, reliable external cavity diode lasers (ECDLs) have replaced complex and expensive traditional dye and ...

Coherent anti-Stokes Raman Scattering (CARS) Microscopy Visualizes Pharmaceutical Tablets During Dissolution

Traditional pharmaceutical dissolution tests determine the amount of drug dissolved over time by measuring drug content in the dissolution medium. This method provides little direct information about what is happening on the surface of the dissolving tablet. As the tablet surface composition and structure can change during dissolution, it is essential to monitor it during dissolution testing. In this work coherent anti-Stokes Raman scattering microscopy is used to image the surface of tablets during dissolution while UV absorption spectroscopy is simultaneously providing inline analysis of dissolved drug concentration for tablets containing a 50% mixture of theophylline anhydrate and ethyl cellulose. The measurements showed that in situ CARS microscopy is capable of imaging selectively theophylline in the presence of ethyl cellulose. Additionally, the theophylline anhydrate converted to theophylline monohydrate during dissolution, with needle-shaped crystals growing on the tablet surface during dissolution. The conversion of theophylline anhydrate to monohydrate, combined with reduced exposure of the drug to the flowing dissolution medium resulted in decreased dissolution rates. Our results show that in situ CARS microscopy combined with inline UV absorption spectroscopy is capable of monitoring pharmaceutical tablet dissolution and correlating surface changes with changes in dissolution rate.

Coherent anti-Stokes Raman Scattering CARS Microscopy Visualizes Pharmaceutical Tablets During Dissolution

Coherent anti-Stokes Raman scattering (CARS) microscopy is combined with an intrinsic flow-through dissolution setup to allow in situ and real-time visualization of the surface of pharmaceutical tablets undergoing dissolution. Using this custom-built setup, it is possible to correlate CARS videos with drug dissolution profiles recorded using inline UV absorption spectroscopy.

Coherent Anti-Stokes-Raman-Streuung (CARS) Mikroskopie visualisiert Pharmazeutische Tabletten während der Auflösung

Traditional pharmaceutical dissolution tests determine the amount of drug dissolved over time by measuring drug content in the dissolution medium. This ...

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

The wettability of silicon (Si) is one of the important parameters in the technology of surface functionalization of this material and fabrication of biosensing devices. We report on a protocol of using KrF and ArF lasers irradiating Si (001) samples immersed in a liquid environment with low number of pulses and operating at moderately low pulse fluences to induce Si wettability modification. Wafers immersed for up to 4 hr in a 0.01% H2O2/H2O solution did not show measurable change in their initial contact angle (CA) ~75&#176;. However, the 500-pulse KrF and ArF lasers irradiation of such wafers in a microchamber filled with 0.01% H2O2/H2O solution at 250 and 65 mJ/cm2, respectively, has decreased the CA to near 15&#176;, indicating the formation of a superhydrophilic surface. The formation of OH-terminated Si (001), with no measurable change of the wafer&#8217;s surface morphology, has been confirmed by X-ray photoelectron spectroscopy and atomic force microscopy measurements. The selective area irradiated samples were then immersed in a biotin-conjugated fluorescein-stained nanospheres solution for 2 hr, resulting in a successful immobilization of the nanospheres in the non-irradiated area. This illustrates the potential of&#160;the method for selective area biofunctionalization and fabrication of advanced Si-based biosensing architectures. We also describe a similar protocol of irradiation of wafers immersed in methanol (CH3OH) using ArF laser operating at pulse fluence of 65 mJ/cm2 and in situ formation of a strongly hydrophobic surface of Si (001) with the CA of 103&#176;. The XPS results indicate ArF laser induced formation of Si&#8211;(OCH3)x compounds responsible for the observed hydrophobicity. However, no such compounds were found by XPS on the Si surface irradiated by KrF laser in methanol, demonstrating the inability of the KrF laser to photodissociate methanol and create -OCH3 radicals.

We report on a process of in situ alteration of HF treated Si (001) surface into a hydrophilic or hydrophobic state by irradiating samples in microfluidic chambers filled with&#160;H2O2/H2O solution (0.01%-0.5%) or methanol solutions using pulsed UV laser of a relative low pulse fluence.

Selektive Bereichsänderung des Siliziumoberfläche Benetzbarkeit durch gepulste UV-Laser-Bestrahlung in flüssigen Umgebung

The wettability of silicon (Si) is one of the important parameters in the technology of surface functionalization of this material and fabrication of ...

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization.

The fabrication process and experimental characterization techniques relevant to single-electron pumps based on silicon metal-oxide-semiconductor quantum dots are discussed.

Silicium-Metall-Oxid-Halbleiter-Quantenpunkte für Einzelelektronen Pumping

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by ...

Study of Siphon Breaker Experiment and Simulation for a Research Reactor

Under the design conditions of a research reactor, the siphon phenomenon induced by pipe rupture can cause continuous outward flow of water. To prevent this outflow, a control device is required. A siphon breaker is a type of safety device that can be utilized to control the loss of coolant water effectively.
To analyze the characteristics of siphon breaking, a real-scale experiment was conducted. From the results of the experiment, it was found that there are several design factors that affect the siphon breaking phenomenon. Therefore, there is a need to develop a theoretical model capable of predicting and analyzing the siphon breaking phenomenon under various design conditions. Using the experimental data, it was possible to formulate a theoretical model that accurately predicts the progress and the result of the siphon breaking phenomenon. The established theoretical model is based on fluid mechanics and incorporates the Chisholm model to analyze two-phase flow. From Bernoulli&#39;s equation, the velocity, quantity, undershooting height, water level, pressure, friction coefficient, and factors related to the two-phase flow could be obtained or calculated. Moreover, to utilize the model established in this study, a siphon breaker analysis and design program was developed. The simulation program operates on the theoretical model basis and returns the result as a graph. The user can confirm the possibility of the siphon breaking by checking the shape of the graph. Furthermore, saving the entire simulation result is possible and it can be used as a resource for analyzing the real siphon breaking system.
In conclusion, the user can confirm the status of the siphon breaking and design the siphon breaker system using the program developed in this study.

The siphon breaking phenomenon was investigated experimentally and a theoretical model was proposed. A simulation program based on the theoretical model was developed and the results of the simulation program were compared with experimental results. It was concluded that the results of the simulation program matched the experimental results well.

Studium der Siphon Breaker Experiment und Simulation für einen Forschungsreaktor

Under the design conditions of a research reactor, the siphon phenomenon induced by pipe rupture can cause continuous outward flow of water. To prevent ...

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

A method of carrier number control by electrolyte gating is demonstrated. We have obtained WS2 thin flakes with atomically flat surface via scotch tape method or individual WS2 nanotubes by dispersing the suspension of WS2 nanotubes. The selected samples have been fabricated into devices by the use of the electron beam lithography and electrolyte is put on the devices. We have characterized the electronic properties of the devices under applying the gate voltage. In the small gate voltage region, ions in the electrolyte are accumulated on the surface of the samples which leads to the large electric potential drop and resultant electrostatic carrier doping at the interface. Ambipolar transfer curve has been observed in this electrostatic doping region. When the gate voltage is further increased, we met another drastic increase of source-drain current which implies that ions are intercalated into layers of WS2 and electrochemical carrier doping is realized. In such electrochemical doping region, superconductivity has been observed. The focused technique provides a powerful strategy for achieving the electric-filed-induced quantum phase transition.

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Here, we present a protocol to control the carrier number in solids by using the electrolyte.

Elektrisches Feld Kontrolle der elektronischen Zustände in WS2 Nanosysteme durch Elektrolyt Anspritzung

A method of carrier number control by electrolyte gating is demonstrated. We have obtained WS2 thin flakes with atomically flat surface via scotch tape ...