Name: generation and coherent control of pulsed quantum frequency combs
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אנו מודים Helsten ר על תובנות טכני; פ קונג מ QPS Photronics על העזרה ועל עיבוד ציוד; כמו גם QuantumOpus, ש Bertone של רכיבים אלקטרואופטיקה על תמיכתם ועל מתן אותנו עם המדינה-of-the-art פוטון איתור ציוד. עבודה זו התאפשרה על ידי מקורות המימון הבאים: מדעי הטבע, הנדסה מחקר המועצה של קנדה (NSERC) (Steacie, אסטרטגי, גילוי, וערכות האצת מענקים, מלגות לתואר שני של קנדה וניהר, מלגת USRA); Mitacs (IT06530), PBEEE (207748); יוזמה של PSR-SIIRI MESI; קנדה תכנית המחקר הכסא; מחקר אוסטרלי גילוי המועצה פרויקטים (DP150104327); המחקר של האיחוד האירופי אופק 2020 ותוכנית חדשנות תחת מארי Sklodowska-קירי הענק (656607); תוכנית CityU SRG-Fd (7004189); עדיפות אסטרטגית תוכנית מחקר של האקדמיה הסינית למדעים (XDB24030300); תוכנית אנשים (מארי קירי פעולות) של האיחוד האירופי תוכנית האיחוד FP7 תחת ריאה גרנט הסכם INCIPIT (PIOF-GA-2013-625466); ממשלת הפדרציה הרוסית דרך מלגת ITMO פרופסורה התוכנית (גרנט 074-U 01); 1000 כשרונות סצ'ואן התוכנית (סין)

1. דור של סל-התדר גבוה-ממדי מסובכת הברית באמצעות עירור פעמו
<ol><li>בעקבות ערכת שמתואר באיור 2 (שלב הדור), לחבר כל רכיב באמצעות שמירה על קיטוב סיבים אופטיים (עבור שיפור יציבות סביבתית).</li>
	<li>להתחבר ספק כוח אפנן אלקטרו-אופטיים משרעת ולהחיל את ההיסט מתח DC, כוונון ערך ההיסט עד הכוח ?...

<ol>
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התחום התדירות אופטי, דרך QFCs, יש יתרון ביישומים קוונטי עבור שורה של סיבות. פעולות הן כלליות, משחק על כל מדינות בו זמנית, אשר התוצאות לעיצוב אינה סקיילבילית גודל או מורכבות כמו עליות dimensionality המדינה. זה מוגברת כמו הרכיבים יכול להיות מחדש ב- the-fly מבלי לשנות את ההגדרה הם מסוגל להיות משולב על שבב ע?...

השליטה של תופעות קוונטיות פותחת את האפשרות עבור יישומים חדשים בתחומים מגוונים כמו תקשורת מאובטחת קוונטית1, עיבוד2וקוונטית חישה3אינפורמציה קוונטית עוצמה. בעוד מגוון רחב של פלטפורמות פיזית הם פעיל להיות נחקר במשך מימושים של קוואנטום טכנולוגיות4, מצבים הקוונטים אופטי הם מועמדים חשוב כמוצג הם יכולים פעמים קוהרנטיות ארוך ויציבות מרעש חיצוני, מעולה העברת נכסים, כמו גם תאימות עם התקשורת הקיימת והטכנולוגיות שבב (CMOS) סיליקון.
לקראת מיצוי הפוטנציאל של הפוטונים לטכנולוגיות קוונטית, המורכבות המדינה ותוכן המידע ניתן להגדיל באמצעות מספר מפלגות סבוכה ו/או גבוהה-dimensionality. עם זאת, הדור על שבב של מדינות אלו אופטי חסרה המעשיות כמו setups מסובך, לא בצורה מושלמת מדרגיים, ו/או להשתמש ברכיבים הפערים מיוחדים. באופן ספציפי, נתיב גבוהה-ממדי-שזירה דורש <img alt="Equation 01" src="/files/ftp_upload/57517/57517eq01v3.jpg"> מקורות זהים באופן עקבי ומאוחד-נלהב, מעגלים מורכבים של קרן-מפצלי5 (איפה <img alt="Equation 01" src="/files/ftp_upload/57517/57517eq01v3.jpg"> הוא dimensionality המדינה), בעוד זמן-שזירה צריך מורכבים זרוע מרובה אינטרפרומטרים6. למרבה הפלא, התדר הוא מתאים היטב עבור הדור מדרגי ושליטה על מצבים מורכבים, כפי שמוצג על ידי ניצול האחרונים שלה קוונטית תדירות קומבס (QFC)7,8 באמצעות שילוב של אופטיקה משולבת, תשתיות טלקומוניקציה9, ומספק מסגרת מבטיח לטכנולוגיות מידע קוונטי.
על שבב QFCs נוצרים באמצעות אפקטים אופטית לא-ליניאריות משולב מיקרו-סתימות. שימוש כזה לא לינארית מיקרו-מהוד, שני פוטונים סבוכה (ציין אות ו לדנוור) המיוצרים על ידי ספונטנית ארבעה גלים ערבוב, דרך השמדתה של שני פוטונים עירור - עם הזוג הנובעת המופקים צירוף לינארי של חלל מצבי המפוזרות לתדר המתאים (איור 1). אם יש קוהרנטיות בין המצבים תדירות בודדים, מדינה תדר-bin מסובכת הוא בנוי10, אשר הוא המכונה לעתים קרובות המדינה במצב נעול פוטון שני11. הגל-פונקציה זו המדינה יכולה להיות מתוארת על ידי,
<img alt="Equation 02" src="/files/ftp_upload/57517/57517eq02v3.jpg">
כאן, <img alt="Equation 03" src="/files/ftp_upload/57517/57517eq03v3.jpg"> , <img alt="Equation 04" src="/files/ftp_upload/57517/57517eq04v3.jpg"> לדנוור יחיד-תדר-מצב, אות רכיבים, בהתאמה, ו <img alt="Equation 05" src="/files/ftp_upload/57517/57517eq05v3.jpg"> הוא משרעת ההסתברות עבור <img alt="Equation 06" src="/files/ftp_upload/57517/57517eq06v3.jpg"> </img>זוג במצב אות-לדנוור - th.
הפגנות קודמות של QFCs על שבב לסמן צדדיות שלהם כמו פלטפורמות מידע קוונטי קיימא, והם כוללים מסרקים של פוטונים מתואם12, פוטונים מקוטב-קרוס13,14,פוטונים סבוכה15 , 16, פוטון רב מדינות15, תדירות-bin מסובכת הברית9,17. כאן, אנו מספקים סקירה מפורטת של פלטפורמת QFC, עבור תדירות גבוהה-ממדי-bin פרוטוקול מסובכת דור המדינה אופטי ושליטה.
יישומים קוונטי, במיוחד אלה כדי להיות לממשק עם אלקטרוניקה במהירות גבוהה (לעיבוד מידע עדכני), דורשים הדור ברמה גבוהה של טוהר גבוהה פוטון הברית בהגדרת קומפקטי ויציב. אנו משתמשים מזימת חלל פעיל במצב נעול, מקוננת כדי לייצר QFCs בתוך תקשורת להקות תדירות S, C, ו- L. טבעת מיקרו הוא שולב גדול פעמו לייזר חור, עם רווח אופטי (המסופקים על ידי מגבר ארביום-מסטול סיבים, EDFA) מסוננים כדי להתאים את רוחב הפס של מיקרו-טבעת עירור18. נעילת מצב פעיל ממומש באמצעות אלקטרו-אופטיים אפנון של הפסדים חלל19. Isolator מבטיח כי הפצת הדופק עוקב אחר בכיוון אחד. הרכבת הדופק וכתוצאה מכך יש רעש נמוכה שורש ממוצע הריבועים (RMS) ותערוכות שיעורי החזרות tunable וכוחות דופק. מסנן חריץ בידוד גבוהה מפרידה את הפוטונים הנפלטים QFC מן השדה עירור. פוטונים בודדים אלה ואז מודרכים דרך סיבי עבור זיהוי ובקרה.
ערכת שלנו הוא צעד לקראת הדור-שיעור גבוה, קטן-טביעת QFC מקור, כמו כל הרכיבים המשמשים פוטנציאל ניתן לשלב על גבי שבב פוטוני. בנוסף, עירור פעמו היא במיוחד מתאים היטב עבור יישומים קוונטית. ראשית, מסתכל על זוג של מיקרו-cavity מגנטיים סימטרי עירור, שהיא מייצרת שני הפוטונים הברית שבו כל פוטון מאופיינת בתדר יחיד במצב – מרכזי עבור ליניארי קוואנט אופטי מחשוב20. כמו כן, ניתן להפיק פוטון מרובה הברית על-ידי הזזת משטרים עירור גבוה יותר של כוח ובחירה אות-לדנוור זוגות מספר15. שנית, כפי פוטונים נפלטים בחלונות זמן ידוע המתאימים עירור פעמו, עיבוד דפוס של gating ניתן ליישם כדי לשפר את מצב איתור. אולי והכי משמעותי, ערכת שלנו תומך דור גבוהה המחירים של פוטון הברית באמצעות נעילת מצב הרמוני מבלי להפחית את היחס מקרים-כדי-בטעות (מכונית) – אשר יכול לסלול את הדרך עבור אינפורמציה קוונטית במהירות גבוהה, מרובה ערוצים טכנולוגיות.
כדי להדגים את ההשפעה ואת הכדאיות של התדר, השליטה QFC הברית חייב להתבצע בדרכים יישוב, שינויי צורה יעילה במיוחד של המדינה קוהרנטיות. כדי לספק את דרישות כאלה, אנו משתמשים שלב מאפננים – הוקמה רכיבים לתעשיית הטלקומוניקציה ומסננים לתכנות מדורגים. מסננים לתכנות יכול לשמש כדי לכפות משרעת ספקטרלי שרירותי ומסיכת שלב על פוטונים בודדים, עם רזולוציה מספיק לטפל בכל מצב תדר בנפרד; שלב אלקטרו-אופטיים מאפננים מונע על ידי תדרי רדיו (RF) האות גנרטורים להקל על ערבוב של רכיבי התדר21.
ההיבט החשוב ביותר של ערכת שליטה זו היא כי הוא פועל על כל המצבים קוונטי פוטונים בו-זמנית במצב יחיד המרחבי, באמצעות רכיבי בקרה בודדת. הגדלת dimensionality את מצב קוונטי לא תוביל לעלייה מורכבות ההתקנה, בניגוד ערכות שזירה נתיב או זמן-תאים. כמו כן, שכל הרכיבים פועלים באופן חיצוני reconfigurable (כלומר ניתן לשנות את הפעולות ללא המתקנת את ההתקנה) ושימוש בתשתית התקשורת הקיימת. לפיכך, קיימים ועתידיים בהתפתחויות בתחום של עיבוד אופטי מרביים ניתן ישירות להעביר לשליטת המדרגי מצבים הקוונטים בעתיד.
לסיכום, ניצול התדר על-ידי QFCs הדור ברמה גבוהה של מצבים הקוונטים מורכבים ושליטה שלהם, ותומכת, ולכן הוא מתאים היטב רתימת של מצבים מורכבים כלפי מעשי ומדרגי קוונטית טכנולוגיות.

<table>
	<tbody>
		<tr>
			<td>Superconducting Nanowire Single-Photon Detector System</td>
			<td>Quantum Opus</td>
			<td>Opus One</td>
			<td></td>
		</tr>
		<tr>
			<td>Electro-optic phase modulator</td>
			<td>EO-Space</td>
			<td>Low loss model</td>
			<td></td>
		</tr>
		<tr>
			<td>Programmable filter</td>
			<td>Finisar&#160;</td>
			<td>WaveShaper 4000s</td>
			<td></td>
		</tr>
		<tr>
			<td>Timing electronics</td>
			<td>PicoQuant</td>
			<td>HydraHarp 400</td>
			<td></td>
		</tr>
		<tr>
			<td>Micro-ring resonator</td>
			<td></td>
			<td></td>
			<td>200 GHz FSR micro-ring resonator made from high refractive index glass. See Ref. 24 for platform details.</td>
		</tr>
		<tr>
			<td>Erbium-doped fiber amplifier</td>
			<td>Keopsys</td>
			<td>PEFA-SP-C-PM-27-B202-FA-FA</td>
			<td></td>
		</tr>
		<tr>
			<td>Electro-optic amplitude modulator</td>
			<td>Oclaro&#160;</td>
			<td>SD40</td>
			<td></td>
		</tr>
		<tr>
			<td>RF tone source</td>
			<td>Rohde &#38; Schwarz</td>
			<td>SMP 04</td>
			<td></td>
		</tr>
		<tr>
			<td>RF tone amplifier</td>
			<td>RF-Lambda</td>
			<td>RFLUPA27G34GA</td>
			<td></td>
		</tr>
		<tr>
			<td>Function generator</td>
			<td>Tetronix</td>
			<td>AFG 3251</td>
			<td></td>
		</tr>
		<tr>
			<td>Isolator</td>
			<td>General Photonics</td>
			<td>NISO-S-15-SS-FC/APF</td>
			<td></td>
		</tr>
		<tr>
			<td>Oscilloscope</td>
			<td>Tetronix&#160;</td>
			<td>TDS5052B</td>
			<td></td>
		</tr>
		<tr>
			<td>Photodiode</td>
			<td>Finisar</td>
			<td>XPDV 50 GHz</td>
			<td></td>
		</tr>
		<tr>
			<td>DWDM</td>
			<td>OptiWorks</td>
			<td>DWFUQUMD08BN</td>
			<td></td>
		</tr>
		<tr>
			<td>Power supply</td>
			<td>Madell</td>
			<td>CA18303D</td>
			<td></td>
		</tr>
	</tbody>
</table>

generation and coherent control of pulsed quantum frequency combs

אנו מציגים שיטה דור ומניפולציה קוהרנטי של מסרקים תדירות פעמו קוונטית. עד עכשיו, שיטות הכנת הברית גבוה-ממדי על שבב באופן מעשי נשארו חמקמק בשל המורכבות הגוברת של המעגלים קוונטית צריך להכין, לעבד מצבים כאלה. פה, אנו מכינים כמה גבוה-ממדי, תדירות-bin מסובכת, שני הפוטונים הברית יכול להיווצר בקצב דור יציבה, גבוהה על-ידי שימוש של עירור מקונן-cavity, נעול במצב פעיל של מיקרו-חלל לא-ליניאריות. טכניקה זו משמשת כדי לייצר קוונטית פעמו תדירות מסרקים. יתר על כן, אנו מציגים כיצד הברית הקוונטי יכול להיות באופן עקבי ומאוחד תמרן באמצעות רכיבי תקשורת סטנדרטיים כגון אלקטרו-אופטיים מאפננים ומסננים ניתן לתיכנות. בפרט, אנו מראים בפירוט כיצד לבצע מדידות אפיון מצב כגון שחזור מטריצת צפיפות, איתור מקרים ונחישות ספקטרום פוטון יחיד. השיטות שהוצגו יוצרים בסיס נגיש, reconfigurable ו מדרגיים עבור פרוטוקולים מניפולציה והכנה המדינה גבוה-ממדי מורכבת בתחום התדר.

ערכת מחולקת לרמות הדור ובקרה של הברית בתדירות גבוהה-ממדי-bin (בהתאם את עירור של לא-ליניאריות מיקרו-חללים, איור 1) מוצגת באיור2. תוכנית התקנה זו משתמשת ברכיבי תקשורת סטנדרטיים, והוא גמיש במיוחד את קצב הייצור של פוטון, פעולות עיבוד שהוחלו. <strong cl...

Watch this Scientific Journal Video about Generation and Coherent Control of Pulsed Quantum Frequency Combs at JoVE.com

Generation and Coherent Control of Pulsed Quantum Frequency Combs

פרוטוקול מוצגים מעשי הדור ומניפולציה קוהרנטי של הברית פוטון בתדר גבוה-ממדי-bin מסובכת באמצעות מיקרו משולב-חללים ורכיבים תקשורת סטנדרטיים, בהתאמה.

דור ושליטה קוהרנטי של הקוונטים פעמו תדירות מסרקים

We present a method for the generation and coherent manipulation of pulsed quantum frequency combs. Until now, methods of preparing high-dimensional ...

The overall goal of this protocol is to generate and coherently control pulsed quantum frequency combs which may be used for quantum information processing. This method can help us provide the tools for fundamental investigations of quantum mechanics and for realizing non-classical technologies, such as quantum communications and information processing. The main advantage of this technique is that well-established telecommunications components and protocols are used to generate and control complex optical quantum states in a reconfigurable and scalable way.We have this idea when we talk with my colleague Jose Azana who is an expert in telecommunication processing, and we realized that we could transfer these tools to the world of quantum objects. Set up the components of the system on an optical table. The system has stages for generation, control, and processing.This depiction provides an overview. All elements are connected with polarization maintaining optical fiber. For now, focus on the generation stage.This stage features an on chip micro-ring resonator embedded in a larger external cavity. The external cavity is made of an electro-optic amplitude modulator driven by a signal generator, an isolator, and an erbium-doped fiber amplifier providing optical gain. There is a narrow filter with a pass band selecting a single microcavity resonance and a notch filter routing the generated photons to the control section.With the cavity disconnected, initiate the erbium-doped fiber amplifier. Use an optical power meter after the amplitude modulator to measure the transmitted power. At the modulator, use a power supply to apply a DC offset to have the transmitted power.Reconnect the cavity and insert a fast photo diode into a different ring port. Use an oscilloscope to observe its signal in the time domain. Without the modulator activated, the output will show unstable pulse operation with a low quality pulse train.Return to the amplitude modulator and connect the function generator. Set the output frequency of the generator to a multiple of the approximate external cavity mode spacing. Selecting a rectangular or sine waveform and turn on the function generator.Tune the function generator frequency and DC offset to optimize and stabilize the pulse train on the oscilloscope. Manually adjust the gain to set the pulse intensity. The non-linear four wave mixing process inside the ring resonator now creates signal and idler photon pairs which will leave the external cavity at the notch filter.Connect the synchronization signal from the function generator to the timing electronics. The generation rate of this pulsed quantum frequency comb may be increased by driving the modulator a higher harmonics of the external cavity frequency spacing, thus entering a harmonic mode locking machine. The amplifier gain must then also be increased to ensure the same power per pulse.After the notch filter in the generation stage, the entangled photons enter the control stage. There, in order, they encounter a programmable filter, a phase modulator, and a second programmable filter. First, program the filters.Set the amplitude of the desired frequency mode channels and attenuate the others. Similarly, decide on the desired phase mask. Do this for each filter.This image represents the amplitude and phase for a coincidence measurement. To prepare the phase modulator, connect the signal generator to the RF amplifier with low loss cables. Then connect the RF amplifier to the phase modulator.Once all the RF ends are connected and terminated, bias the amplifier. Set the RF signal generator to create sidebands which overlap with the desired frequency modes, then turn it on. As a test, set up the system to send a continuous wave laser beam through the phase modulator.Use an optical spectrum analyzer to check that the input spectrum produces an output spectrum that corresponds to the intended modulation for the experiment. To continue, connect the phase modulator with the programmable filters. When setting the phase modulation pattern, it is important to determine what pattern will create the targeted frequency sidebands for the chosen operation.This will depend on the dimension of the quantum state used and on microcavity resonance spacing. The photon pairs from the generation stage enter the control stage. The first filter sets the programmed amplitude and phase.Next, the phase modulator creates the necessary frequency sidebands. The second filter selects the signal and idler pair. On input to the processing stage, separate the entangled photons with a dense wavelength division multiplexer.From there, they each go to single photon detectors. Record the arrival time of each photon using timing electronics set up for coincidence measurement. The setup allows coherent control over the photon states.Here frequency sidebands are generated via phase modulation. The sideband spacing and amplitudes are determined by the modulating signal. Coherent control of the photon state can be used for quantum state tomography.This is an example reconstruction of the state density matrix for a two photon system with a dimensionality of three for each photon. The fidelity between the measured and maximally entangled states is about 81%The pulsed high repetition rate generation technique is not limited to micro-ring resonators and may be adopted for other optical cavities, such as photonic crystal waveguides, microdisks, and second-order nonlinear cavities. With its development, the platform combines established techniques in telecommunications with quantum technologies towards potential applications, like secure communications at high rates over multiplex channels or high-dimensional quantum operations.

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Unit 1

Frequency Response

SCIENTISTS IN ACTION

Fabrication of Nano-engineered Transparent Conducting Oxides by Pulsed Laser Deposition

Nanosecond Pulsed Laser Deposition (PLD) in the presence of a background gas allows the deposition of metal oxides with tunable morphology, structure, density and stoichiometry by a proper control of the plasma plume expansion dynamics. Such versatility can be exploited to produce nanostructured films from compact and dense to nanoporous characterized by a hierarchical assembly of nano-sized clusters. In particular we describe the detailed methodology to fabricate two types of Al-doped ZnO (AZO) films as transparent electrodes in photovoltaic devices: 1) at low O2 pressure, compact films with electrical conductivity and optical transparency close to the state of the art transparent conducting oxides (TCO) can be deposited at room temperature, to be compatible with thermally sensitive materials such as polymers used in organic photovoltaics (OPVs); 2) highly light scattering hierarchical structures resembling a forest of nano-trees are produced at higher pressures. Such structures show high Haze factor (&gt;80%) and may be exploited to enhance the light trapping capability. The method here described for AZO films can be applied to other metal oxides relevant for technological applications such as TiO2, Al2O3, WO3 and Ag4O4.

We describe the experimental method to deposit nanostructured oxide thin films by nanosecond Pulsed Laser Deposition (PLD) in the presence of a background gas. By using this method Al-doped ZnO (AZO) films, from compact to hierarchically structured as nano-tree forests, can be deposited.

ייצור של ננו מהונדס תחמוצות שקופות לנהל בתצהיר ליזר פעם

Nanosecond Pulsed  Laser Deposition (PLD) in the presence of a background gas allows the deposition  of metal oxides with tunable morphology, structure, ...

Gradient Echo Quantum Memory in Warm Atomic Vapor

Gradient echo memory (GEM) is a protocol for storing optical quantum states of light in atomic ensembles. The primary motivation for such a technology is that quantum key distribution (QKD), which uses Heisenberg uncertainty to guarantee security of cryptographic keys, is limited in transmission distance. The development of a quantum repeater is a possible path to extend QKD range, but a repeater will need a quantum memory. In our experiments we use a gas of rubidium 87 vapor that is contained in a warm gas cell. This makes the scheme particularly simple. It is also a highly versatile scheme that enables in-memory refinement of the stored state, such as frequency shifting and bandwidth manipulation. The basis of the GEM protocol is to absorb the light into an ensemble of atoms that has been prepared in a magnetic field gradient. The reversal of this gradient leads to rephasing of the atomic polarization and thus recall of the stored optical state. We will outline how we prepare the atoms and this gradient and also describe some of the pitfalls that need to be avoided, in particular four-wave mixing, which can give rise to optical gain.

The gradient echo memory is a protocol for storing optical quantum states of light in atomic ensembles. Quantum memory is a key element of a quantum repeater, which can extend the range of quantum key distribution. We outline the operation of the scheme when implemented in a 3-level atomic ensemble.

Gradient Echo קוונטית זיכרון בחם אטומי החמקן

Gradient  echo memory (GEM) is a protocol for storing optical quantum states of light in  atomic ensembles. The primary motivation for such a technology ...

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

A quantum computer is a computer composed of quantum bits (qubits) that takes advantage of quantum effects, such as superposition of states and entanglement, to solve certain problems exponentially faster than with the best known algorithms on a classical computer. Gate-defined lateral quantum dots on GaAs/AlGaAs are one of many avenues explored for the implementation of a qubit. When properly fabricated, such a device is able to trap a small number of electrons in a certain region of space. The spin states of these electrons can then be used to implement the logical 0 and 1 of the quantum bit. Given the nanometer scale of these quantum dots, cleanroom facilities offering specialized equipment- such as scanning electron microscopes and e-beam evaporators- are required for their fabrication. Great care must be taken throughout the fabrication process to maintain cleanliness of the sample surface and to avoid damaging the fragile gates of the structure. This paper presents the detailed fabrication protocol of gate-defined lateral quantum dots from the wafer to a working device. Characterization methods and representative results are also briefly discussed. Although this paper concentrates on double quantum dots, the fabrication process remains the same for single or triple dots or even arrays of quantum dots. Moreover, the protocol can be adapted to fabricate lateral quantum dots on other substrates, such as Si/SiGe.

This paper presents a detailed fabrication protocol for gate-defined semiconductor lateral quantum dots on gallium arsenide heterostructures. These nanoscale devices are used to trap few electrons for use as quantum bits in quantum information processing or for other mesoscopic experiments such as coherent conductance measurements.

Nanofabrication של השער שהוגדרו GaAs / AlGaAs נקודות קוונטיות רוחביות

A quantum computer is a computer composed of quantum bits (qubits) that takes advantage of quantum effects, such as superposition of states and ...

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Single GaN nanowire (NW) devices fabricated on SiO2 can exhibit a strong degradation after annealing due to the occurrence of void formation at the contact/SiO2 interface. This void formation can cause cracking and delamination of the metal film, which can increase the resistance or lead to a complete failure of the NW device. In order to address issues associated with void formation, a technique was developed that removes Ni/Au contact metal films from the substrates to allow for the examination and characterization of the contact/substrate and contact/NW interfaces of single GaN NW devices. This procedure determines the degree of adhesion of the contact films to the substrate and NWs and allows for the characterization of the morphology and composition of the contact interface with the substrate and nanowires. This technique is also useful for assessing the amount of residual contamination that remains from the NW suspension and from photolithographic processes on the NW-SiO2 surface prior to metal deposition. The detailed steps of this procedure are presented for the removal of annealed Ni/Au contacts to Mg-doped GaN NWs on a SiO2 substrate.

A technique was developed that removes Ni/Au contact metal films from their substrate to allow for the examination and characterization of the contact/substrate and contact/NW interfaces of single GaN nanowire devices.

ניתוח של ממשקי מגע עבור יחיד התקני Nanowire גן

Single GaN nanowire (NW) devices fabricated on SiO2 can exhibit  a strong degradation after annealing due to the  occurrence of void formation at the ...

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Since their development in the late 1980s, cheap, reliable external cavity diode lasers (ECDLs) have replaced complex and expensive traditional dye and Titanium Sapphire lasers as the workhorse laser of atomic physics labs1,2. Their versatility and prolific use throughout atomic physics in applications such as absorption spectroscopy and laser cooling1,2 makes it imperative for incoming students to gain a firm practical understanding of these lasers. This publication builds upon the seminal work by Wieman3, updating components, and providing a video tutorial. The setup, frequency locking and performance characterization of an ECDL will be described. Discussion of component selection and proper mounting of both diodes and gratings, the factors affecting mode selection within the cavity, proper alignment for optimal external feedback, optics setup for coarse and fine frequency sensitive measurements, a brief overview of laser locking techniques, and laser linewidth measurements are included.

This is an instructional paper to guide the construction and diagnostics of external cavity diode lasers (ECDLs), including component selection and optical alignment, as well as the basics of frequency reference spectroscopy and laser linewidth measurements for applications in the field of atomic physics.

בנייה ואפיון חיצוני לייזרי חלל דיודה לפיסיקה אטומית

Since their development in the late 1980s, cheap, reliable external cavity diode lasers (ECDLs) have replaced complex and expensive traditional dye and ...

Coherent anti-Stokes Raman Scattering (CARS) Microscopy Visualizes Pharmaceutical Tablets During Dissolution

Traditional pharmaceutical dissolution tests determine the amount of drug dissolved over time by measuring drug content in the dissolution medium. This method provides little direct information about what is happening on the surface of the dissolving tablet. As the tablet surface composition and structure can change during dissolution, it is essential to monitor it during dissolution testing. In this work coherent anti-Stokes Raman scattering microscopy is used to image the surface of tablets during dissolution while UV absorption spectroscopy is simultaneously providing inline analysis of dissolved drug concentration for tablets containing a 50% mixture of theophylline anhydrate and ethyl cellulose. The measurements showed that in situ CARS microscopy is capable of imaging selectively theophylline in the presence of ethyl cellulose. Additionally, the theophylline anhydrate converted to theophylline monohydrate during dissolution, with needle-shaped crystals growing on the tablet surface during dissolution. The conversion of theophylline anhydrate to monohydrate, combined with reduced exposure of the drug to the flowing dissolution medium resulted in decreased dissolution rates. Our results show that in situ CARS microscopy combined with inline UV absorption spectroscopy is capable of monitoring pharmaceutical tablet dissolution and correlating surface changes with changes in dissolution rate.

Coherent anti-Stokes Raman Scattering CARS Microscopy Visualizes Pharmaceutical Tablets During Dissolution

Coherent anti-Stokes Raman scattering (CARS) microscopy is combined with an intrinsic flow-through dissolution setup to allow in situ and real-time visualization of the surface of pharmaceutical tablets undergoing dissolution. Using this custom-built setup, it is possible to correlate CARS videos with drug dissolution profiles recorded using inline UV absorption spectroscopy.

פיזור ראמאן (CARS) טבליות קוהרנטית אנטי סטוקס מדמיין מיקרוסקופית תרופות במהלך פירוק

Traditional pharmaceutical dissolution tests determine the amount of drug dissolved over time by measuring drug content in the dissolution medium. This ...

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

The wettability of silicon (Si) is one of the important parameters in the technology of surface functionalization of this material and fabrication of biosensing devices. We report on a protocol of using KrF and ArF lasers irradiating Si (001) samples immersed in a liquid environment with low number of pulses and operating at moderately low pulse fluences to induce Si wettability modification. Wafers immersed for up to 4 hr in a 0.01% H2O2/H2O solution did not show measurable change in their initial contact angle (CA) ~75&#176;. However, the 500-pulse KrF and ArF lasers irradiation of such wafers in a microchamber filled with 0.01% H2O2/H2O solution at 250 and 65 mJ/cm2, respectively, has decreased the CA to near 15&#176;, indicating the formation of a superhydrophilic surface. The formation of OH-terminated Si (001), with no measurable change of the wafer&#8217;s surface morphology, has been confirmed by X-ray photoelectron spectroscopy and atomic force microscopy measurements. The selective area irradiated samples were then immersed in a biotin-conjugated fluorescein-stained nanospheres solution for 2 hr, resulting in a successful immobilization of the nanospheres in the non-irradiated area. This illustrates the potential of&#160;the method for selective area biofunctionalization and fabrication of advanced Si-based biosensing architectures. We also describe a similar protocol of irradiation of wafers immersed in methanol (CH3OH) using ArF laser operating at pulse fluence of 65 mJ/cm2 and in situ formation of a strongly hydrophobic surface of Si (001) with the CA of 103&#176;. The XPS results indicate ArF laser induced formation of Si&#8211;(OCH3)x compounds responsible for the observed hydrophobicity. However, no such compounds were found by XPS on the Si surface irradiated by KrF laser in methanol, demonstrating the inability of the KrF laser to photodissociate methanol and create -OCH3 radicals.

We report on a process of in situ alteration of HF treated Si (001) surface into a hydrophilic or hydrophobic state by irradiating samples in microfluidic chambers filled with&#160;H2O2/H2O solution (0.01%-0.5%) or methanol solutions using pulsed UV laser of a relative low pulse fluence.

פינת שינוי סלקטיבית של יכולת רטיבות משטח סיליקון על ידי פעמו UV לייזר הקרנה בסביבה נוזלית

The wettability of silicon (Si) is one of the important parameters in the technology of surface functionalization of this material and fabrication of ...

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization.

The fabrication process and experimental characterization techniques relevant to single-electron pumps based on silicon metal-oxide-semiconductor quantum dots are discussed.

סיליקון מתכת-תחמוצת-מוליכים למחצה קוונטי נקודות לשאיבת חד אלקטרון

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by ...

Study of Siphon Breaker Experiment and Simulation for a Research Reactor

Under the design conditions of a research reactor, the siphon phenomenon induced by pipe rupture can cause continuous outward flow of water. To prevent this outflow, a control device is required. A siphon breaker is a type of safety device that can be utilized to control the loss of coolant water effectively.
To analyze the characteristics of siphon breaking, a real-scale experiment was conducted. From the results of the experiment, it was found that there are several design factors that affect the siphon breaking phenomenon. Therefore, there is a need to develop a theoretical model capable of predicting and analyzing the siphon breaking phenomenon under various design conditions. Using the experimental data, it was possible to formulate a theoretical model that accurately predicts the progress and the result of the siphon breaking phenomenon. The established theoretical model is based on fluid mechanics and incorporates the Chisholm model to analyze two-phase flow. From Bernoulli&#39;s equation, the velocity, quantity, undershooting height, water level, pressure, friction coefficient, and factors related to the two-phase flow could be obtained or calculated. Moreover, to utilize the model established in this study, a siphon breaker analysis and design program was developed. The simulation program operates on the theoretical model basis and returns the result as a graph. The user can confirm the possibility of the siphon breaking by checking the shape of the graph. Furthermore, saving the entire simulation result is possible and it can be used as a resource for analyzing the real siphon breaking system.
In conclusion, the user can confirm the status of the siphon breaking and design the siphon breaker system using the program developed in this study.

The siphon breaking phenomenon was investigated experimentally and a theoretical model was proposed. A simulation program based on the theoretical model was developed and the results of the simulation program were compared with experimental results. It was concluded that the results of the simulation program matched the experimental results well.

המחקר של הניסוי מפסק הקונכייה וסימולציות עבור כור מחקר

Under the design conditions of a research reactor, the siphon phenomenon induced by pipe rupture can cause continuous outward flow of water. To prevent ...

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

A method of carrier number control by electrolyte gating is demonstrated. We have obtained WS2 thin flakes with atomically flat surface via scotch tape method or individual WS2 nanotubes by dispersing the suspension of WS2 nanotubes. The selected samples have been fabricated into devices by the use of the electron beam lithography and electrolyte is put on the devices. We have characterized the electronic properties of the devices under applying the gate voltage. In the small gate voltage region, ions in the electrolyte are accumulated on the surface of the samples which leads to the large electric potential drop and resultant electrostatic carrier doping at the interface. Ambipolar transfer curve has been observed in this electrostatic doping region. When the gate voltage is further increased, we met another drastic increase of source-drain current which implies that ions are intercalated into layers of WS2 and electrochemical carrier doping is realized. In such electrochemical doping region, superconductivity has been observed. The focused technique provides a powerful strategy for achieving the electric-filed-induced quantum phase transition.

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Here, we present a protocol to control the carrier number in solids by using the electrolyte.

פקד שדה חשמלי של הברית אלקטרונית ב- WS Nanodevices2 מאת אלקטרוליט Gating

A method of carrier number control by electrolyte gating is demonstrated. We have obtained WS2 thin flakes with atomically flat surface via scotch tape ...