Name: generation and coherent control of pulsed quantum frequency combs
Uploaded: 2018-06-08T13:00:00
Description: Watch this Scientific Journal Video about Generation and Coherent Control of Pulsed Quantum Frequency Combs at JoVE.com

R. Helsten ありがとう技術的な洞察力。P. ヘルプと処理装置の QPS Photronics からカンQuantumOpus および光エレクトロニクス コンポーネントのサポートと最新の光子検出装置をご提供するための N. ベルトーネ。この作業は次の資金源によって可能になった: 自然な科学および工学研究審議会のカナダ (レベル) (Steacie、戦略、探索、および加速の補助金スキーム、ヴァニエ カナダ大学院奨学金、USRA 奨学金);Mitacs (IT06530) と PBEEE (207748);MESI PSR SIIRI イニシアチブ。カナダの研究の椅子のプログラム;オーストラリアの研究評議会発見プロジェクト (DP150104327);欧州連合のホライゾン 2020年研究とイノベーション プログラムの下でマリー マリアスクウォドフスカ キュリー (656607) を与えます。CityU SRG Fd プログラム (7004189);中国科学アカデミー (XDB24030300); の戦略的な重点研究課題レア付与契約 INCIPIT (PIOF-ジョージア州-2013-625466); の下で欧州連合の FP7 プログラムの人々 プログラム (マリー ・ キュリー ・ アクション)機械の交わりと教授プログラム (グラント 074 U 01); ロシア連邦の政府1000 才能四川プログラム (中国)

1. パルス励起による状態高次元の周波数の発生
<ol><li>次の図 2 (世代ステージ) に記載されているスキーム、偏波保持光ファイバー (環境安定性の向上) を使用して各コンポーネントを接続します。</li>
	<li>電気光学振幅変調器に電源を接続し、それを介して送信光パワーは約半分になります (光パワー メーターを使用して測定される)、までのオフセット値をチューニン?...

<ol>
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光周波数領域、QFCs、経由では、量子力学の応用理由のホストのために有益です。操作は、グローバル、すべてに作用する状態同時に、サイズや状態次元につれて複雑さで対応していないデザインの結果。これは、コンポーネントは再構成、オンザフライで設定を変更することがなくすることができます、既存のおよび/または半導体・通信インフラの開発を利用することで内蔵をなることが?...

量子現象のコントロールは、安全な量子通信12、および3をセンシング量子の強力な量子情報処理などの多様な分野で新しいアプリケーションの可能性を開きます。一方、さまざまな物理的なプラットフォームは、量子技術4の認識のために積極的に研究されている、光の量子状態は、重要な候補者彼らは長いコヒーレンス時間と外部ノイズ、優れた安定性を示すことができます。既存の通信とシリコン チップ (CMOS) 技術との互換性と同様、伝送特性。
に向かって光子量子技術の可能性を完全に実現するには、複数の量子もつれの当事者および/または高次元を使用して状態の複雑さと内容を増やすことができます。しかし、このような光の状態のチップの世代は、セットアップは、複雑な完全にスケーラブルではない、または専門性の高いコンポーネントを使用して実用性を欠いています。具体的には、高次元のパス-エンタングルメントが必要です<img alt="Equation 01" src="/files/ftp_upload/57517/57517eq01v3.jpg">同一ソースのコヒーレント励起とビームスプリッター5の精巧な回路 (どこ<img alt="Equation 01" src="/files/ftp_upload/57517/57517eq01v3.jpg">状態の次元は、) 時間エンタングルメントを必要と複雑な間、マルチ アーム干渉計6。驚くことに、周波数ドメインは適してのスケーラブルな生成と複雑な状態の制御量子周波数櫛 (QFC)7,8統合された光学系の組み合わせを使用して、最近の開発によって示すようと通信インフラ9、将来の量子情報技術の有望なフレームワークを提供します。
統合されたマイクロ共振器における非線形光学効果を用いたオンチップ QFCs が生成されます。このような非線形マイクロ共振を使用すると、(信号およびアイドラーとして記載されて) 2 つの光子は消滅励起光子 - キャビティの重ね合わせで生成される結果のペアを介して、自発の 4 波の混合によって生成されます。等間隔共鳴周波数モード (図 1)。個々 の周波数モード間干渉がある場合周波数量子もつれ状態は形成された10、11モード ロック 2 光子状態として呼ばれるです。この状態の波動関数を記述できます。
<img alt="Equation 02" src="/files/ftp_upload/57517/57517eq02v3.jpg">
ここでは、<img alt="Equation 03" src="/files/ftp_upload/57517/57517eq03v3.jpg">と<img alt="Equation 04" src="/files/ftp_upload/57517/57517eq04v3.jpg">モード単一周波数のアイドラーは、コンポーネントをそれぞれ、信号と<img alt="Equation 05" src="/files/ftp_upload/57517/57517eq05v3.jpg">の確率振幅は、<img alt="Equation 06" src="/files/ftp_upload/57517/57517eq06v3.jpg">番目信号アイドラー モード ペア。
チップの QFCs の前のデモ実行可能な量子情報プラットフォームとして多様性を強調表示し、光子14,15 , 交差偏光の光子13相関光子対12の櫛を含める,16, 多光子状態15、および周波数ビン エンタングル状態9,17。ここでは、我々 は QFC プラットフォームの詳細な概要を提供するや、高次元の周波数のためのプロトコルもつれ光状態の生成と制御。
将来の量子力学の応用、特にそれら (情報処理) 用高速電子機器に接続するのには、コンパクトかつ安定的なセットアップで純度の高い光子状態の高速生成を要求します。我々 は、S、C、L バンド通信内で QFCs を生成するのに能動モード同期、入れ子になった空洞方式を使用します。マイクロ リングは、マイクロ リング励起帯域幅18に一致するフィルター (エルビウム ドープ光ファイバー増幅器、光増幅器によって提供される) 利得を有するより大きいパルス レーザー キャビティに組み込まれます。ロック モードをキャビティ損失19電気光学変調を介して積極的に実現します。アイソレータは、パルスの伝搬方向が一方向に従うことを保証します。結果のパルスはノイズが非常に低い平均平方根 (RMS) と可変の繰り返し速度とパルスの力を展示します。高アイソレーション ノッチ フィルターを分離放出 QFC 光子励起場から。これらの単一光子制御・検出用ファイバー、導かれます。
本方式は高生成率、小フット プリント QFC ソース歩フォトニック チップに使用されるすべてのコンポーネントを統合可能性のあることができます。また、パルス励起は量子力学の応用に特に適して。まず、微小共振器の共鳴励起に対称のペアを見て、各フォトンは線形光学量子コンピューティング20の単一周波数モード-中央で特徴づけられる、二光子励起状態を生成します。同様に、高い電源励起体制に移動し、選択する複数の信号アイドラー ペア15多光子の状態を生成できます。第二に、光子は、パルス励起に対応する既知の時刻ウィンドウで出力されますと後処理とゲートを実装できます状態検出を改善するために。おそらく最も重要な我々 のスキーム サポート ハーモニック モード ロックを用いた高速、多チャンネル量子情報の道を開くことができる偶然の事故比率 (CAR)-を減らすことがなく光子状態の高発生率技術。
影響と周波数ドメインの実現可能性を示すためには、QFC 状態の制御は、非常に効率的な変換と状態の一貫性を確保する対象となる方法で達成されなければなりません。このような要件を満たすためには、我々 は通信業界で確立されたコンポーネント-位相変調器カスケード プログラム可能なフィルターを使用します。任意のスペクトル振幅と周波数モードごとに個別に対処するための十分な解像度を持つ単一の光子の位相マスクを課すことをプログラミング可能なフィルターを使用できます。無線周波数 (RF) 信号発生器による電気光学位相変調器が周波数コンポーネント21の混合を促進します。
この制御方式の最も重要な側面は、すべて単一のコントロール要素を使用して、単一空間モードで同時に光子の量子モードで動作することです。量子状態の次元を増やすことがなく、パスまたは時間箱エンタングルメント スキームとは異なり、セットアップの複雑さの増加に します。同様に、すべてのコンポーネントが外部から再構成可能な (つまり、セットアップを改正せず操作を変更ことができます)、既存の通信インフラを使用します。したがって、超高速光処理の分野で既存および今後の開発することができますに直接転送量子状態のスケーラブルな制御、将来的に。
要約すると、QFCs による周波数ドメインの搾取は複雑な量子状態とその制御の高速生成をサポートし、従って実用的かつスケーラブルな量子技術に向かって複雑な状態の活用に適しています。

<table>
	<tbody>
		<tr>
			<td>Superconducting Nanowire Single-Photon Detector System</td>
			<td>Quantum Opus</td>
			<td>Opus One</td>
			<td></td>
		</tr>
		<tr>
			<td>Electro-optic phase modulator</td>
			<td>EO-Space</td>
			<td>Low loss model</td>
			<td></td>
		</tr>
		<tr>
			<td>Programmable filter</td>
			<td>Finisar&#160;</td>
			<td>WaveShaper 4000s</td>
			<td></td>
		</tr>
		<tr>
			<td>Timing electronics</td>
			<td>PicoQuant</td>
			<td>HydraHarp 400</td>
			<td></td>
		</tr>
		<tr>
			<td>Micro-ring resonator</td>
			<td></td>
			<td></td>
			<td>200 GHz FSR micro-ring resonator made from high refractive index glass. See Ref. 24 for platform details.</td>
		</tr>
		<tr>
			<td>Erbium-doped fiber amplifier</td>
			<td>Keopsys</td>
			<td>PEFA-SP-C-PM-27-B202-FA-FA</td>
			<td></td>
		</tr>
		<tr>
			<td>Electro-optic amplitude modulator</td>
			<td>Oclaro&#160;</td>
			<td>SD40</td>
			<td></td>
		</tr>
		<tr>
			<td>RF tone source</td>
			<td>Rohde &#38; Schwarz</td>
			<td>SMP 04</td>
			<td></td>
		</tr>
		<tr>
			<td>RF tone amplifier</td>
			<td>RF-Lambda</td>
			<td>RFLUPA27G34GA</td>
			<td></td>
		</tr>
		<tr>
			<td>Function generator</td>
			<td>Tetronix</td>
			<td>AFG 3251</td>
			<td></td>
		</tr>
		<tr>
			<td>Isolator</td>
			<td>General Photonics</td>
			<td>NISO-S-15-SS-FC/APF</td>
			<td></td>
		</tr>
		<tr>
			<td>Oscilloscope</td>
			<td>Tetronix&#160;</td>
			<td>TDS5052B</td>
			<td></td>
		</tr>
		<tr>
			<td>Photodiode</td>
			<td>Finisar</td>
			<td>XPDV 50 GHz</td>
			<td></td>
		</tr>
		<tr>
			<td>DWDM</td>
			<td>OptiWorks</td>
			<td>DWFUQUMD08BN</td>
			<td></td>
		</tr>
		<tr>
			<td>Power supply</td>
			<td>Madell</td>
			<td>CA18303D</td>
			<td></td>
		</tr>
	</tbody>
</table>

generation and coherent control of pulsed quantum frequency combs

世代のパルスの量子周波数コムのコヒーレント操作法を提案します。今までは、実用的な方法で高次元状態のチップを準備する方法の準備してこのような状態の処理に必要な量子回路の複雑化によりとらえどころのないままです。ここで、どのように高次元周波数ビン巻き込まれ、微小共振器の非線形の入れ子になっている空洞、能動モード同期励起を用いた 2 光子状態安定した、高い発生率で生成できます。この手法は、パルスの量子周波数コムを生成する使用されます。さらに、我々 は現在どのように量子状態を一貫してできる操作プログラミング可能なフィルターや電気光学変調器などの標準の通信コンポーネントを使用します。特に、ディテールの密度行列の再構成、同時検出、単一光子スペクトル測定などの状態特性評価測定を達成するために方法を示します。提示方法は、周波数領域における複雑な高次元状態準備および操作プロトコルのアクセス、再構成、およびスケーラブルな基盤を形成します。

生成と制御 (図 1研究科非線形マイクロ共振器の励振に基づく) 高次元周波数ビン状態の輪郭を描かれたスキーム図 2に示します。このセットアップは標準の通信コンポーネントを使用して、光子の生産率と適用処理で柔軟性の高い。車を低下させることがなく光子対の生産を増やすことができますを示す繰り返し率の関数?...

Watch this Scientific Journal Video about Generation and Coherent Control of Pulsed Quantum Frequency Combs at JoVE.com

Generation and Coherent Control of Pulsed Quantum Frequency Combs

実用的な世代とそれぞれ統合マイクロ共振器および標準の通信コンポーネントを使用して高次元周波数ビンもつれ光子状態のコヒーレント制御のプロトコルが表示されます。

世代とパルスの量子周波数コムのコヒーレント制御

We present a method for the generation and coherent manipulation of pulsed quantum frequency combs. Until now, methods of preparing high-dimensional ...

The overall goal of this protocol is to generate and coherently control pulsed quantum frequency combs which may be used for quantum information processing. This method can help us provide the tools for fundamental investigations of quantum mechanics and for realizing non-classical technologies, such as quantum communications and information processing. The main advantage of this technique is that well-established telecommunications components and protocols are used to generate and control complex optical quantum states in a reconfigurable and scalable way.We have this idea when we talk with my colleague Jose Azana who is an expert in telecommunication processing, and we realized that we could transfer these tools to the world of quantum objects. Set up the components of the system on an optical table. The system has stages for generation, control, and processing.This depiction provides an overview. All elements are connected with polarization maintaining optical fiber. For now, focus on the generation stage.This stage features an on chip micro-ring resonator embedded in a larger external cavity. The external cavity is made of an electro-optic amplitude modulator driven by a signal generator, an isolator, and an erbium-doped fiber amplifier providing optical gain. There is a narrow filter with a pass band selecting a single microcavity resonance and a notch filter routing the generated photons to the control section.With the cavity disconnected, initiate the erbium-doped fiber amplifier. Use an optical power meter after the amplitude modulator to measure the transmitted power. At the modulator, use a power supply to apply a DC offset to have the transmitted power.Reconnect the cavity and insert a fast photo diode into a different ring port. Use an oscilloscope to observe its signal in the time domain. Without the modulator activated, the output will show unstable pulse operation with a low quality pulse train.Return to the amplitude modulator and connect the function generator. Set the output frequency of the generator to a multiple of the approximate external cavity mode spacing. Selecting a rectangular or sine waveform and turn on the function generator.Tune the function generator frequency and DC offset to optimize and stabilize the pulse train on the oscilloscope. Manually adjust the gain to set the pulse intensity. The non-linear four wave mixing process inside the ring resonator now creates signal and idler photon pairs which will leave the external cavity at the notch filter.Connect the synchronization signal from the function generator to the timing electronics. The generation rate of this pulsed quantum frequency comb may be increased by driving the modulator a higher harmonics of the external cavity frequency spacing, thus entering a harmonic mode locking machine. The amplifier gain must then also be increased to ensure the same power per pulse.After the notch filter in the generation stage, the entangled photons enter the control stage. There, in order, they encounter a programmable filter, a phase modulator, and a second programmable filter. First, program the filters.Set the amplitude of the desired frequency mode channels and attenuate the others. Similarly, decide on the desired phase mask. Do this for each filter.This image represents the amplitude and phase for a coincidence measurement. To prepare the phase modulator, connect the signal generator to the RF amplifier with low loss cables. Then connect the RF amplifier to the phase modulator.Once all the RF ends are connected and terminated, bias the amplifier. Set the RF signal generator to create sidebands which overlap with the desired frequency modes, then turn it on. As a test, set up the system to send a continuous wave laser beam through the phase modulator.Use an optical spectrum analyzer to check that the input spectrum produces an output spectrum that corresponds to the intended modulation for the experiment. To continue, connect the phase modulator with the programmable filters. When setting the phase modulation pattern, it is important to determine what pattern will create the targeted frequency sidebands for the chosen operation.This will depend on the dimension of the quantum state used and on microcavity resonance spacing. The photon pairs from the generation stage enter the control stage. The first filter sets the programmed amplitude and phase.Next, the phase modulator creates the necessary frequency sidebands. The second filter selects the signal and idler pair. On input to the processing stage, separate the entangled photons with a dense wavelength division multiplexer.From there, they each go to single photon detectors. Record the arrival time of each photon using timing electronics set up for coincidence measurement. The setup allows coherent control over the photon states.Here frequency sidebands are generated via phase modulation. The sideband spacing and amplitudes are determined by the modulating signal. Coherent control of the photon state can be used for quantum state tomography.This is an example reconstruction of the state density matrix for a two photon system with a dimensionality of three for each photon. The fidelity between the measured and maximally entangled states is about 81%The pulsed high repetition rate generation technique is not limited to micro-ring resonators and may be adopted for other optical cavities, such as photonic crystal waveguides, microdisks, and second-order nonlinear cavities. With its development, the platform combines established techniques in telecommunications with quantum technologies towards potential applications, like secure communications at high rates over multiplex channels or high-dimensional quantum operations.

generation-and-coherent-control-of-pulsed-quantum-frequency-combs

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Unit 1

Frequency Response

SCIENTISTS IN ACTION

Fabrication of Nano-engineered Transparent Conducting Oxides by Pulsed Laser Deposition

Nanosecond Pulsed Laser Deposition (PLD) in the presence of a background gas allows the deposition of metal oxides with tunable morphology, structure, density and stoichiometry by a proper control of the plasma plume expansion dynamics. Such versatility can be exploited to produce nanostructured films from compact and dense to nanoporous characterized by a hierarchical assembly of nano-sized clusters. In particular we describe the detailed methodology to fabricate two types of Al-doped ZnO (AZO) films as transparent electrodes in photovoltaic devices: 1) at low O2 pressure, compact films with electrical conductivity and optical transparency close to the state of the art transparent conducting oxides (TCO) can be deposited at room temperature, to be compatible with thermally sensitive materials such as polymers used in organic photovoltaics (OPVs); 2) highly light scattering hierarchical structures resembling a forest of nano-trees are produced at higher pressures. Such structures show high Haze factor (&gt;80%) and may be exploited to enhance the light trapping capability. The method here described for AZO films can be applied to other metal oxides relevant for technological applications such as TiO2, Al2O3, WO3 and Ag4O4.

We describe the experimental method to deposit nanostructured oxide thin films by nanosecond Pulsed Laser Deposition (PLD) in the presence of a background gas. By using this method Al-doped ZnO (AZO) films, from compact to hierarchically structured as nano-tree forests, can be deposited.

パルスレーザー蒸着法によるナノエンジニアリング透明導電性酸化物の作製

Nanosecond Pulsed  Laser Deposition (PLD) in the presence of a background gas allows the deposition  of metal oxides with tunable morphology, structure, ...

工学

Gradient Echo Quantum Memory in Warm Atomic Vapor

Gradient echo memory (GEM) is a protocol for storing optical quantum states of light in atomic ensembles. The primary motivation for such a technology is that quantum key distribution (QKD), which uses Heisenberg uncertainty to guarantee security of cryptographic keys, is limited in transmission distance. The development of a quantum repeater is a possible path to extend QKD range, but a repeater will need a quantum memory. In our experiments we use a gas of rubidium 87 vapor that is contained in a warm gas cell. This makes the scheme particularly simple. It is also a highly versatile scheme that enables in-memory refinement of the stored state, such as frequency shifting and bandwidth manipulation. The basis of the GEM protocol is to absorb the light into an ensemble of atoms that has been prepared in a magnetic field gradient. The reversal of this gradient leads to rephasing of the atomic polarization and thus recall of the stored optical state. We will outline how we prepare the atoms and this gradient and also describe some of the pitfalls that need to be avoided, in particular four-wave mixing, which can give rise to optical gain.

The gradient echo memory is a protocol for storing optical quantum states of light in atomic ensembles. Quantum memory is a key element of a quantum repeater, which can extend the range of quantum key distribution. We outline the operation of the scheme when implemented in a 3-level atomic ensemble.

暖かい原子蒸気に勾配エコー量子メモリ

Gradient  echo memory (GEM) is a protocol for storing optical quantum states of light in  atomic ensembles. The primary motivation for such a technology ...

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

A quantum computer is a computer composed of quantum bits (qubits) that takes advantage of quantum effects, such as superposition of states and entanglement, to solve certain problems exponentially faster than with the best known algorithms on a classical computer. Gate-defined lateral quantum dots on GaAs/AlGaAs are one of many avenues explored for the implementation of a qubit. When properly fabricated, such a device is able to trap a small number of electrons in a certain region of space. The spin states of these electrons can then be used to implement the logical 0 and 1 of the quantum bit. Given the nanometer scale of these quantum dots, cleanroom facilities offering specialized equipment- such as scanning electron microscopes and e-beam evaporators- are required for their fabrication. Great care must be taken throughout the fabrication process to maintain cleanliness of the sample surface and to avoid damaging the fragile gates of the structure. This paper presents the detailed fabrication protocol of gate-defined lateral quantum dots from the wafer to a working device. Characterization methods and representative results are also briefly discussed. Although this paper concentrates on double quantum dots, the fabrication process remains the same for single or triple dots or even arrays of quantum dots. Moreover, the protocol can be adapted to fabricate lateral quantum dots on other substrates, such as Si/SiGe.

This paper presents a detailed fabrication protocol for gate-defined semiconductor lateral quantum dots on gallium arsenide heterostructures. These nanoscale devices are used to trap few electrons for use as quantum bits in quantum information processing or for other mesoscopic experiments such as coherent conductance measurements.

ゲート定義のGaAs / AlGaAs系横量子ドットのナノファブリケーション

A quantum computer is a computer composed of quantum bits (qubits) that takes advantage of quantum effects, such as superposition of states and ...

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Single GaN nanowire (NW) devices fabricated on SiO2 can exhibit a strong degradation after annealing due to the occurrence of void formation at the contact/SiO2 interface. This void formation can cause cracking and delamination of the metal film, which can increase the resistance or lead to a complete failure of the NW device. In order to address issues associated with void formation, a technique was developed that removes Ni/Au contact metal films from the substrates to allow for the examination and characterization of the contact/substrate and contact/NW interfaces of single GaN NW devices. This procedure determines the degree of adhesion of the contact films to the substrate and NWs and allows for the characterization of the morphology and composition of the contact interface with the substrate and nanowires. This technique is also useful for assessing the amount of residual contamination that remains from the NW suspension and from photolithographic processes on the NW-SiO2 surface prior to metal deposition. The detailed steps of this procedure are presented for the removal of annealed Ni/Au contacts to Mg-doped GaN NWs on a SiO2 substrate.

A technique was developed that removes Ni/Au contact metal films from their substrate to allow for the examination and characterization of the contact/substrate and contact/NW interfaces of single GaN nanowire devices.

シングルGaNナノ細線デバイスのための接触界面の解析

Single GaN nanowire (NW) devices fabricated on SiO2 can exhibit  a strong degradation after annealing due to the  occurrence of void formation at the ...

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Since their development in the late 1980s, cheap, reliable external cavity diode lasers (ECDLs) have replaced complex and expensive traditional dye and Titanium Sapphire lasers as the workhorse laser of atomic physics labs1,2. Their versatility and prolific use throughout atomic physics in applications such as absorption spectroscopy and laser cooling1,2 makes it imperative for incoming students to gain a firm practical understanding of these lasers. This publication builds upon the seminal work by Wieman3, updating components, and providing a video tutorial. The setup, frequency locking and performance characterization of an ECDL will be described. Discussion of component selection and proper mounting of both diodes and gratings, the factors affecting mode selection within the cavity, proper alignment for optimal external feedback, optics setup for coarse and fine frequency sensitive measurements, a brief overview of laser locking techniques, and laser linewidth measurements are included.

This is an instructional paper to guide the construction and diagnostics of external cavity diode lasers (ECDLs), including component selection and optical alignment, as well as the basics of frequency reference spectroscopy and laser linewidth measurements for applications in the field of atomic physics.

原子物理学外部共振器半導体レーザーの構築とキャラクタリゼーション

Since their development in the late 1980s, cheap, reliable external cavity diode lasers (ECDLs) have replaced complex and expensive traditional dye and ...

Coherent anti-Stokes Raman Scattering (CARS) Microscopy Visualizes Pharmaceutical Tablets During Dissolution

Traditional pharmaceutical dissolution tests determine the amount of drug dissolved over time by measuring drug content in the dissolution medium. This method provides little direct information about what is happening on the surface of the dissolving tablet. As the tablet surface composition and structure can change during dissolution, it is essential to monitor it during dissolution testing. In this work coherent anti-Stokes Raman scattering microscopy is used to image the surface of tablets during dissolution while UV absorption spectroscopy is simultaneously providing inline analysis of dissolved drug concentration for tablets containing a 50% mixture of theophylline anhydrate and ethyl cellulose. The measurements showed that in situ CARS microscopy is capable of imaging selectively theophylline in the presence of ethyl cellulose. Additionally, the theophylline anhydrate converted to theophylline monohydrate during dissolution, with needle-shaped crystals growing on the tablet surface during dissolution. The conversion of theophylline anhydrate to monohydrate, combined with reduced exposure of the drug to the flowing dissolution medium resulted in decreased dissolution rates. Our results show that in situ CARS microscopy combined with inline UV absorption spectroscopy is capable of monitoring pharmaceutical tablet dissolution and correlating surface changes with changes in dissolution rate.

Coherent anti-Stokes Raman Scattering CARS Microscopy Visualizes Pharmaceutical Tablets During Dissolution

Coherent anti-Stokes Raman scattering (CARS) microscopy is combined with an intrinsic flow-through dissolution setup to allow in situ and real-time visualization of the surface of pharmaceutical tablets undergoing dissolution. Using this custom-built setup, it is possible to correlate CARS videos with drug dissolution profiles recorded using inline UV absorption spectroscopy.

溶解中にコヒーレント反ストークスラマン散乱（CARS）顕微鏡可視化薬錠

Traditional pharmaceutical dissolution tests determine the amount of drug dissolved over time by measuring drug content in the dissolution medium. This ...

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

The wettability of silicon (Si) is one of the important parameters in the technology of surface functionalization of this material and fabrication of biosensing devices. We report on a protocol of using KrF and ArF lasers irradiating Si (001) samples immersed in a liquid environment with low number of pulses and operating at moderately low pulse fluences to induce Si wettability modification. Wafers immersed for up to 4 hr in a 0.01% H2O2/H2O solution did not show measurable change in their initial contact angle (CA) ~75&#176;. However, the 500-pulse KrF and ArF lasers irradiation of such wafers in a microchamber filled with 0.01% H2O2/H2O solution at 250 and 65 mJ/cm2, respectively, has decreased the CA to near 15&#176;, indicating the formation of a superhydrophilic surface. The formation of OH-terminated Si (001), with no measurable change of the wafer&#8217;s surface morphology, has been confirmed by X-ray photoelectron spectroscopy and atomic force microscopy measurements. The selective area irradiated samples were then immersed in a biotin-conjugated fluorescein-stained nanospheres solution for 2 hr, resulting in a successful immobilization of the nanospheres in the non-irradiated area. This illustrates the potential of&#160;the method for selective area biofunctionalization and fabrication of advanced Si-based biosensing architectures. We also describe a similar protocol of irradiation of wafers immersed in methanol (CH3OH) using ArF laser operating at pulse fluence of 65 mJ/cm2 and in situ formation of a strongly hydrophobic surface of Si (001) with the CA of 103&#176;. The XPS results indicate ArF laser induced formation of Si&#8211;(OCH3)x compounds responsible for the observed hydrophobicity. However, no such compounds were found by XPS on the Si surface irradiated by KrF laser in methanol, demonstrating the inability of the KrF laser to photodissociate methanol and create -OCH3 radicals.

We report on a process of in situ alteration of HF treated Si (001) surface into a hydrophilic or hydrophobic state by irradiating samples in microfluidic chambers filled with&#160;H2O2/H2O solution (0.01%-0.5%) or methanol solutions using pulsed UV laser of a relative low pulse fluence.

液体環境におけるパルスUVレーザー照射によるシリコン表面の濡れ性の選択エリア変更

The wettability of silicon (Si) is one of the important parameters in the technology of surface functionalization of this material and fabrication of ...

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization.

The fabrication process and experimental characterization techniques relevant to single-electron pumps based on silicon metal-oxide-semiconductor quantum dots are discussed.

単電子揚水用のシリコン金属酸化膜半導体量子ドット

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by ...

Study of Siphon Breaker Experiment and Simulation for a Research Reactor

Under the design conditions of a research reactor, the siphon phenomenon induced by pipe rupture can cause continuous outward flow of water. To prevent this outflow, a control device is required. A siphon breaker is a type of safety device that can be utilized to control the loss of coolant water effectively.
To analyze the characteristics of siphon breaking, a real-scale experiment was conducted. From the results of the experiment, it was found that there are several design factors that affect the siphon breaking phenomenon. Therefore, there is a need to develop a theoretical model capable of predicting and analyzing the siphon breaking phenomenon under various design conditions. Using the experimental data, it was possible to formulate a theoretical model that accurately predicts the progress and the result of the siphon breaking phenomenon. The established theoretical model is based on fluid mechanics and incorporates the Chisholm model to analyze two-phase flow. From Bernoulli&#39;s equation, the velocity, quantity, undershooting height, water level, pressure, friction coefficient, and factors related to the two-phase flow could be obtained or calculated. Moreover, to utilize the model established in this study, a siphon breaker analysis and design program was developed. The simulation program operates on the theoretical model basis and returns the result as a graph. The user can confirm the possibility of the siphon breaking by checking the shape of the graph. Furthermore, saving the entire simulation result is possible and it can be used as a resource for analyzing the real siphon breaking system.
In conclusion, the user can confirm the status of the siphon breaking and design the siphon breaker system using the program developed in this study.

The siphon breaking phenomenon was investigated experimentally and a theoretical model was proposed. A simulation program based on the theoretical model was developed and the results of the simulation program were compared with experimental results. It was concluded that the results of the simulation program matched the experimental results well.

研究用原子炉のサイフォン ブレーカー実験とシミュレーションに関する研究

Under the design conditions of a research reactor, the siphon phenomenon induced by pipe rupture can cause continuous outward flow of water. To prevent ...

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

A method of carrier number control by electrolyte gating is demonstrated. We have obtained WS2 thin flakes with atomically flat surface via scotch tape method or individual WS2 nanotubes by dispersing the suspension of WS2 nanotubes. The selected samples have been fabricated into devices by the use of the electron beam lithography and electrolyte is put on the devices. We have characterized the electronic properties of the devices under applying the gate voltage. In the small gate voltage region, ions in the electrolyte are accumulated on the surface of the samples which leads to the large electric potential drop and resultant electrostatic carrier doping at the interface. Ambipolar transfer curve has been observed in this electrostatic doping region. When the gate voltage is further increased, we met another drastic increase of source-drain current which implies that ions are intercalated into layers of WS2 and electrochemical carrier doping is realized. In such electrochemical doping region, superconductivity has been observed. The focused technique provides a powerful strategy for achieving the electric-filed-induced quantum phase transition.

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Here, we present a protocol to control the carrier number in solids by using the electrolyte.

電解質ゲートによって WS2ナノデバイスにおける電子状態の電界制御

A method of carrier number control by electrolyte gating is demonstrated. We have obtained WS2 thin flakes with atomically flat surface via scotch tape ...