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DOI :
10.3791/58113-v
•
14:16 min
October 23rd, 2018
Chapters
0:04
Title
1:01
Growth and Preparation of GaN Template by Metal-Organic Chemical Vapor Deposition (MOCVD)
4:42
Molecular Beam Epitaxy (MBE) Growth of BeMgZnO/ZnO Heterostructures
8:35
Schottky Diode Fabrication
10:09
Results: Characterization of Zn-Polar Be0.02Mg0.26ZnO/ZnO Heterostructures and Ag/Be0.02Mg0.26ZnO/ZnO Schottky Diodes
12:07
Conclusion
实现高品质肖特基接触是异质结构场效应晶体管 (HFETs) 实现高效栅极调制的必要条件。本文介绍了基于 GaN 模板的等离子体辅助分子束外延生长的高浓度二维电子气体 (2DEG) 的锌极性 BeMgZnO/氧化锌异质结构中肖特基二极管的制备方法和特点。
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