研制高性能的 gap-硅异构太阳能电池

7.4K Views

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10:31 min

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November 16th, 2018

DOI :

10.3791/58292-v

November 16th, 2018

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7,378 Views

Chaomin Zhang¹, Ehsan Vadiee¹, Som Dahal¹, Richard R. King¹, Christiana B. Honsberg¹

¹School of Electrical, Computer, and Energy Engineering, Arizona State University

Chapters

0:04

Title

0:38

Silicon Wafer Cleaning and Phosphorus Diffusion into the Silicon Substrate

3:08

SiN_x Coating by Plasma-Enhanced Chemical Vapor Deposition (PECVD), GaP Growth by Molecular Beam Epitaxy (MBE), and Wet Etching of Back n+ and SiN_x Layers

6:01

Hole-Selective Contact Formation on the Bare Si Side and External Contact Formation on the GaP Side

8:17

Results: Characterization of the GaP/Si Heterojunction Devices

10:11

Conclusion

Transcript

该方法可以告诉、回答有关分层硅集成太阳能电池制造中如何保持高硅散装寿命的关键问题。这个过程的主要优点是，我们可以实现长硅散装寿命，即使在硅上的磷酸铀载体选择性接触的异质生长之后。这使我们能够访问其他 III-V 半导体的带隙。

它是一种多结太阳能电池与硅底部电池的形式。首先，在高密度聚乙烯酸加热浴中准备食人鱼溶液，加热至110摄氏度，等待温度稳定。在另一个酸浴中，准备稀释的盐酸和过氧化氢溶液，以去除离子污染，加热至74摄氏度，等待温度稳定。

将四英寸直径浮子区端型双

Summary

在这里, 我们提出了一个协议, 以开发高性能的 gap/si 异质结太阳能电池具有较高的硅少数民族载体寿命。

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