Разработка высокопроизводительных разрыв/Si гетеропереход солнечных батарей

0:38

Silicon Wafer Cleaning and Phosphorus Diffusion into the Silicon Substrate

3:08

SiN_x Coating by Plasma-Enhanced Chemical Vapor Deposition (PECVD), GaP Growth by Molecular Beam Epitaxy (MBE), and Wet Etching of Back n+ and SiN_x Layers

6:01

Hole-Selective Contact Formation on the Bare Si Side and External Contact Formation on the GaP Side

8:17

Results: Characterization of the GaP/Si Heterojunction Devices

10:11

Conclusion