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8.5K Views
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12:32 min
May 24th, 2020
DOI :
10.3791/60798-v
Chapters
0:00
Introduction
2:48
Preparation of the Electrolytic Solution
3:55
Substrate Cleaning
5:24
Al Gate Electrode Evaporation
6:31
Anodization of the Al Layer
7:41
ZnO Active Layer Deposition
8:38
Drain and Source Electrodes Deposition
9:36
TFT Electrical Characterization
10:09
Results
11:22
Conclusion
Transcript
以下是协议的概述。我们首先准备电解溶液,混合水,乙二醇和酒石酸。之后,基底玻璃幻灯片需要通过碱性洗涤剂溶液的声波清洗、丙酮和异丙醇进行清洗,然后进行射频等离子体清洗。
TFT 的构造通过将铝电极沉积到干净的玻璃基板上完成。接着氧化铝溅射氧化锌活性层和热蒸发的漏源电极。铝阳极化过程通过淹没铝镀玻璃基板和连接到源测量单元的镀金不锈钢板进行。
该过程首先在系统中施加恒定电流,电压呈线性增长,直到确定氧化物厚度的最终电压。因此,电压保持不变,直到整个系统的电流降至零。TT
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Summary
氧化锌薄膜晶体管(TTs)氧化铝介电层生长的阳极化参数各不相同,以确定对电气参数响应的影响。方差分析 (ANOVA) 应用于 Plackett-Burman 实验设计 (DOE),以确定导致器件性能优化的制造条件。
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