Zhang Xiang is a Ph.D. in the State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences. Her research interests focus on GaN epitaxial growth on novel substrate and LED device fabrications, including growth on graphene and β-Ga2O3. During her PhD, she experimentally and theoretically studied the mechanism of nucleation of AlN on oxygen-deficiency graphene substrates. Furthermore, she also investigated the epitaxy method of high-quality GaN films onβ-Ga2O3 substrate and she creatively proposed to grow GaN pyramid directly onβ-Ga2O3 substrate by selective growth.
