Analysis of Contact Interfaces for Single GaN Nanowire DevicesAndrew M. Herrero 1, Paul T. Blanchard 1, Kris A. Bertness 1
1Quantum Electronics and Photonics Division, National Institute of Standards and Technology
A technique was developed that removes Ni/Au contact metal films from their substrate to allow for the examination and characterization of the contact/substrate and contact/NW interfaces of single GaN nanowire devices.
