November 15th, 2013
•A technique was developed that removes Ni/Au contact metal films from their substrate to allow for the examination and characterization of the contact/substrate and contact/NW interfaces of single GaN nanowire devices.
Related Videos
Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
Thermal Measurement Techniques in Analytical Microfluidic Devices
Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation
Solvent Bonding for Fabrication of PMMA and COP Microfluidic Devices
Scanning Light Scattering Profiler (SLPS) Based Methodology to Quantitatively Evaluate Forward and Backward Light Scattering from Intraocular Lenses
Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes
Fabrication of Refractive-index-matched Devices for Biomedical Microfluidics
Fabrication of Robust Nanoscale Contact between a Silver Nanowire Electrode and CdS Buffer Layer in Cu(In,Ga)Se2 Thin-film Solar Cells
Crack Monitoring in Resonance Fatigue Testing of Welded Specimens Using Digital Image Correlation
ABOUT JoVE
Copyright © 2024 MyJoVE Corporation. All rights reserved