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Analysis of Contact Interfaces for Single GaN Nanowire Devices

DOI :

10.3791/50738-v

November 15th, 2013

November 15th, 2013

9,210 Views

1Quantum Electronics and Photonics Division, National Institute of Standards and Technology

A technique was developed that removes Ni/Au contact metal films from their substrate to allow for the examination and characterization of the contact/substrate and contact/NW interfaces of single GaN nanowire devices.

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