John J. Boland

Mechanical properties of ultrahigh-strength gold nanowires.

Microstructure-hardened silver nanowires.

A generalized description of the elastic properties of nanowires.

Synthesis and dispersion of isolated high aspect ratio gold nanowires.

Ultimate-strength germanium nanowires.

Simultaneous scanning tunneling microscopy and stress measurements to elucidate the origins of surface forces.

High-yield production of graphene by liquid-phase exfoliation of graphite.

Emergence and visualization of an interface state during contact formation with a single molecule.

Mechanical properties of ZnO nanowires.

Transparent, flexible, and highly conductive thin films based on polymer-nanotube composites.

Frontier orbital description of the Si(100) surface: a route to symmetry-allowed and concerted [2 + 2] cycloadditions.

Silver Nanowire Networks as Flexible, Transparent, Conducting Films: Extremely High DC to Optical Conductivity Ratios.

Electrical connectivity in single-walled carbon nanotube networks.

Optimization of multi-walled carbon nanotube-metal contacts by electrical stressing.

Selective tuning and optimization of the contacts to metallic and semiconducting single-walled carbon nanotubes.

Nanoscale mapping of electrical resistivity and connectivity in graphene strips and networks.

Two-dimensional nanosheets produced by liquid exfoliation of layered materials.

Surface energy driven agglomeration and growth of single crystal metal wires.

Stereoselective cycloaddition of 1,3-cyclohexadiene on Si(100): a simple algorithm for product identification based on secondary orbital interactions.

Europium-directed self-assembly of a luminescent supramolecular gel from a tripodal terpyridine-based ligand.

Existence of micrometer-scale water droplets at solvent/air interfaces.

Self-assembly of LiMo3Se3 nanowire networks from nanoscale building-blocks in solution.

Single crystal iron nanocube synthesis via the surface energy driven growth method.

Manipulating connectivity and electrical conductivity in metallic nanowire networks.

Chemical nano-gardens: growth of salt nanowires from supramolecular self-assembly gels.

Programmability of nanowire networks.

Poisson's ratio of individual metal nanowires.

Effective electrode length enhances electrical activation of nanowire networks: experiment and simulation.

A single nanoscale junction with programmable multilevel memory.

Healable luminescent self-assembly supramolecular metallogels possessing lanthanide (Eu/Tb) dependent rheological and morphological properties.

Ultimate conductivity performance in metallic nanowire networks.

Amyloid Oligomers and Mature Fibrils Prepared from an Innocuous Protein Cause Diverging Cellular Death Mechanisms.

Cross-Linking the Fibers of Supramolecular Gels Formed from a Tripodal Terpyridine Derived Ligand with d-Block Metal Ions.

Resistance of Single Ag Nanowire Junctions and Their Role in the Conductivity of Nanowire Networks.

Exploring the Effect of Ligand Structural Isomerism in Langmuir-Blodgett Films of Chiral Luminescent Eu(III) Self-Assemblies.

Effective medium theory for the conductivity of disordered metallic nanowire networks.

Co-percolation to tune conductive behaviour in dynamical metallic nanowire networks.

Nanocrystalline copper films are never flat.

Oxide-mediated recovery of field-effect mobility in plasma-treated MoS.

Transparent, Flexible Silicon Nanostructured Wire Networks with Seamless Junctions for High-Performance Photodetector Applications.

Self-Assembled Two-Dimensional Supramolecular Networks Characterized by Scanning Tunneling Microscopy and Spectroscopy in Air and under Vacuum.

Emergence of winner-takes-all connectivity paths in random nanowire networks.

Switching at the contacts in GeSbTe phase-change nanowire devices.

Corrigendum: Material characterisation of nanowires with Intrinsic stress (2017 Nanotechnology 28 355706).

The Electro-Optical Performance of Silver Nanowire Networks.

Synthesis of centimeter-size free-standing perovskite nanosheets from single-crystal lead bromide for optoelectronic devices.

MoS Memtransistors Fabricated by Localized Helium Ion Beam Irradiation.

Emulating synaptic response in n- and p-channel MoS transistors by utilizing charge trapping dynamics.

Stretching the Equilibrium Limit of Sn in Ge Sn Nanowires: Implications for Field Effect Transistors.