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第 12 章

トランジスタ

バイポーラ接合トランジスタ
バイポーラ接合トランジスタ
Transistors play a vital role in electronic circuits, enabling the functionality of amplifiers, memories, and microprocessors. Transistors can be designed ...
BJT の構成
BJT の構成
Bipolar junction transistors have different configurations based on the common contact. The common base configuration features a shared base terminal for ...
BJTの動作原理
BJTの動作原理
Consider a PNP transistor in a common-base configuration, operating in active mode. Forward biasing reduces the emitter-base potential, enabling the ...
BJTの特徴
BJTの特徴
Consider the common-emitter configuration of the BJT. The voltage and current dependencies are measured experimentally to understand the current-voltage ...
BJTの動作モード
BJTの動作モード
A bipolar junction transistor has four modes of operation, depending upon the voltage polarities at the emitter-base junction and the collector-base ...
BJTの周波数特性
BJTの周波数特性
A common-emitter amplifier's DC bias point is determined by the base-emitter voltage, base current, and collector current. The load line is determined ...
BJTのカットオフ周波数
BJTのカットオフ周波数
The common base configuration's current gain is constant at low frequencies of the input signal but attenuates after a specific frequency known as the ...
BJTの切り替え
BJTの切り替え
Consider a switching circuit that involves a sudden change in the emitter-base voltage. Initially, both the base-emitter junction and the ...
BJTアンプ
BJTアンプ
In the active region of a common emitter NPN BJT, the emitter current is the sum of the base current and the collector current. Here, the base voltage ...
BJTアンプの小信号解析
BJTアンプの小信号解析
Consider a BJT  transistor amplifier circuit operating in its active region to provide linear amplification. The total instantaneous base-emitter ...
電界効果トランジスタ
電界効果トランジスタ
A field effect transistor is a three-terminal unipolar device comprising a gate, drain, and source terminal. Charge carriers flow from the source to the ...
JFETの特徴
JFETの特徴
The output characteristics of a JFET describe the relationship between the drain current and the drain-source voltage at various levels of gate-source ...
FETのバイアス
FETのバイアス
A junction field effect transistor is used in electronic circuits to control electrical currents. JFETs consist of an N-type or P-type silicon bar ...
MOSコンデンサ
MOSコンデンサ
MOS capacitors have three layers: the bottom layer is a semiconductor substrate, the middle is an insulating layer, and the top metal layer is the gate ...
MOSFET(モスフェット)
MOSFET(モスフェット)
The Metal-Oxide-Semiconductor Field-Effect Transistor, or MOSFET is a semiconductor device with three terminals: the Source, the Drain, and the Gate and ...
MOSFETの特性
MOSFETの特性
The essential parameters of MOSFETs include the channel length, the channel width, the oxide thickness, the junction depth, and the substrate doping. With ...
MOSFET:エンハンスメントモード
MOSFET:エンハンスメントモード
The two modes of p- and n-channel MOSFETs are enhancement and depletion. Enhancement mode MOSFETs are typically off at zero gate-source voltage, meaning ...
MOSFET:デプレッションモード
MOSFET:デプレッションモード
Depletion-mode MOSFETs are already ON without a gate bias but need a gate-source voltage to switch OFF. They function like JFETs, where the drain-source ...
MOSFETアンプ
MOSFETアンプ
The MOSFET operates as a voltage-controlled current source in its active region, where the gate-to-source voltage regulates the drain current. This ...
MOSFETアンプの小信号解析
MOSFETアンプの小信号解析
Consider a MOSFET transistor amplifier circuit operating in its active region to provide linear amplification. The total instantaneous gate-to-source ...
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