The authors thank New Energy and Industrial Technology Development Organization (NEDO) under Ministry of Economy, Trade, and Industry (METI), Japan, for the financial support.

PDMSスタンプの作製<ol><li>ポリテトラフルオロエチレン（PTFE）コンテナ内：ナノホールモールド（50ミリメートル×50ミリメートルナノインプリントシクロオレフィンポリマープラスチックフィルム、サイズ）を設定します。 </li><li> 2,4（ディスポーザブルポリプロピレンチップでデジタルマイクロピペットを用いて、6μl）を使い捨てガラス瓶にビニルメチルシロキサン - ジメチルシロキサン共重合体（50ミリメートル×50ミリメートルの金型用0.76グラム）を計量し、白金 - ジビニルテトラメチルジシロキサン錯体とそれを混ぜ、 （ディスポーザブルポリプロピレンチップでデジタルマイクロピペットを用いて24μlの、）6,8- tetramethyltetra-vinylcyclotetrasiloxane。 </li><li>ガラス瓶に（ディスポーザブルポリプロピレンチップでデジタルマイクロピペットを用いて、0.24ミリリットル）メチルヒドロシロキサン - ジメチルシロキサン共重合体を追加し、使い捨てガラスピペットを使用して、すぐにそれを混ぜます。 PTFEコンテナに設定され、金型の表面をN 2により送風された後、金型に得られた混合物（「ハード」のPDMSプレポリマー）を注ぎ、スピンコートを開始〜40ミクロ​​ンの層厚を達成するために40秒間1000rpmでる。 </li><li> 30分には簡単にハードPDMSをクロスリンクするために、65℃に予熱ホットチャンバー内でスピンコートされたサンプルを置きます。 </li><li>加熱中、シリコーン（6 g）を計量し、使い捨てガラス瓶に触媒（0.6グラム）とそれを混ぜます。真空デシケーター中でガラスびんを置き、シリコーン混合物（「ソフト」のPDMSプレポリマー）に閉じ込められた空気を除去するために15分間真空（〜133 Paの）を適用します。 </li><li>それぞれ、加熱室と真空デシケーターから金型とソフトPDMSプレポリマーを取り出し、かつ迅速に加熱された金型の上にソフトPDMSプレポリマーを注ぎます。ソフトPDMS層の厚さが約3 mmです。 </li><li>少なくとも1時間〜133 Paのさらなる脱気のために再び真空デシケーター中で得られた試​​料を置きます。 </li><li>加熱室に脱気したサンプルを移し、80℃（〜3℃/分の加熱速度）まで徐々に加熱開始。 5時間この温度を保ちますハードとソフトPDMS完全に架橋します。 </li><li>室温までサンプルを冷却した後、PDMSは、金型から慎重スタンプはがし。必要に応じて、第二の（またはそれ以上）のスタンプを製造するために金型を再利用します。注：同じモールドをスタンプ品質を劣化させることなく、少なくとも5回使用することができます。 </li><li>結果ナノピラースタンプ（二層ハード/ソフトPDMSコンポジット）27は、ナイフを使用して所望の大きさ（当社の太陽電池の一般的に7ミリメートル×7ミリメートル）の片に切断し、使用するまで空気中で保管してください。 </li></ol>ブロック共重合体溶液の調製<ol><li> （PS-bの-P2VP / O -xylene）ガラス瓶にポリスチレンブロック -ポリ-2-ビニルピリジン（PS- Bが-P2VP）の粉末を秤量し、3 mg / mlの比でOの -xyleneとそれを混ぜます。 </li><li> 1時間70°CでのPTFE被覆磁気攪拌棒を用いて混合物を撹拌しました。 </li><li>攪拌せずに室温で24時間以上のために、得られた溶液を保管してくださいリングは、自己組織化ミセルの形成を完了する。しっかりソリューションを密封し、周囲条件下で保管してください。注：液の品質があっても一年間の準備の後に変更されていません。 </li></ol> μCのa-Siの調製：H基質<ol><li> SnO 2で被覆された洗浄用メガネ：超音波浴を用いてH 2 O（500mL）で、室温で界面活性剤（500 ml）に溶解し、H 2 O（500mL）で（15：F（F、以下、ガラス/のSnO 2を示します ）各分間）。 N 2を吹き付けることによって、それらを乾燥させます。 </li><li>洗浄したガラスをロード/ SnO 2を基板ホルダーと預金のZnO中のF基質：ジョージア州（20 nm）の表2に指定された条件での直流（DC）スパッタリングシステムを使用して。 </li><li>ガラスをロード/のSnO 2：F / ZnOの：プラズマ化学を使用してのH P（10 nm）で、I（500 nm）であり 、n（40 nm）の層：別の基板ホルダーと預金μのc-Si中のGa基板VAPOR蒸着表2に指定された条件で（PECVD）システム。 </li><li>転送・印刷工程まで真空またはN 2下で基質H（N - - I H pのガラス/ SnO 2を：F / ZnOの：のGa /μの C-Si）の結果、μCのa-Siに保管してください。 </li></ol> PDMSスタンプの4 Agをコーティング<ol><li> N 2を吹き付けて EtOHで（ステップ1で調製）、PDMSスタンプ（30ミリリットル）で15分間超音波浴を用いて、乾燥を洗ってください。 </li><li>両面接着テープを使用してサンプルホルダーに洗浄PDMSスタンプをロードし、以下の条件の電子ビーム（EB）蒸着システム用いてAg膜（10-80 nm）を堆積させる。堆積速度= 5~10オングストローム/秒、圧力=〜1.5×10 -4 Paで。 </li><li> EB蒸着システムから銀でコーティングされたスタンプを取り出し、以下の伝達印刷工程ですぐにそれらを使用しています。 </li></ol>シン上のAgナノディスクの5転写印刷フィルムのSi表面<ol><li> 5000で（ディスポーザブルポリプロピレンチップでデジタルマイクロピペットを用いて、50ミリメートル×50ミリメートルのサンプル0.3 ml）をSiはPS-Bは-P2VP溶液で真空またはN 2とスピンコートの下に格納された基板の薄膜を取り出し40秒間回転数。 </li><li> EtOHをデジタルマイクロピペット（5ミクロン/セル面積）を使用してPS-Bは-P2VP被覆表面を湿らせ、銀でコーティングされたPDMSは、エタノール、湿潤表面にそっとスタンプも適用されます。スタンプを押さないでください。 </li><li>真空チャンバー内でスタンプを持つ薄膜Si基板を配置し、真空（〜133 Paの）を適用します。 </li><li> 5分後、空気と真空チャンバーを充填し、薄膜Si基板を取り出します。 </li><li>銀ナノディスク印刷を転送するために、ピンセットでスタンプの両方の側面を保持することによって、薄膜Si基板からスタンプを削除します。注意：成功した場合、スタンプの跡が緑がかったスポットとして表示されます。 </li><li> Etの連続的な流れと転写印刷した薄膜Si基板をすすぎますOH 15秒（〜30ミリリットル）およびN 2を吹き付けて乾燥しました。 </li><li> Arプラズマシステムを使用してPS-B-P2VPコーティングを削除します。 <ol><li> Arプラズマシステムの処理チャンバ内で転写プリント薄膜Si基板を配置します。 </li><li> 〜5分（圧力〜20 Pa）とするためのプロセスチャンバ内の空気を送り出します。 </li><li> Arガスラインのバルブを開き、手動で4 SCCMへの流量を調整します。 40 Paまでの圧力を安定させるために〜5分間待ってください。 </li><li> 108秒間Arプラズマを生成します。 </li><li> Arガスラインのバルブを閉じ、ポンプ停止、およびSi基板のプラズマ洗浄、転写印刷した薄膜を取り出すプロセスチャンバ内に空気を埋めます。 </li></ol></li></ol>薄膜シリコン太陽電池製造の6完成<ol><li>ポリイミドテープを使用して、Arプラズマ処理後に転写印刷した薄膜Si基板にメタルマスクを取り付けます。 </li><li>マスクされた直流スパッタ装置の基板ホルダで基板とdeposiをロードトンのZnO：Gaの（100 nm）で、銀（250 nm）で、及びZnO：Gaを表2に指定された条件で（40 nm）で順次。 </li><li>基板からの金属マスクを外し、マスクされた薄膜Si層を除去する（ すなわち 、面積のZnO：GaとAgが堆積されていなかった）、反応性イオンエッチング（RIE）システムを使用して。 <ol><li> RIEシステムの処理チャンバ内にサンプルを置きます。 </li><li>製造者の指示に従って、プロセスチャンバ内の空気を送り出します。 </li><li> = 20 Paで、電力は100W、時間= 1分20秒100/20 = SF 6 / O 2流量SCCM、圧力：製造者の指示を次のように次のようにプロセス条件を設定します。 </li><li> 、SF 6とO 2ガスラインを開き、圧力を安定化し、プラズマを発生させます。 </li><li> SF 6とO 2ガスラインのバルブを閉じて、ポンプを停止し、サンプルを取り出し、プロセスチャンバ内にN 2を埋めます 。 </li></ol></li><li>入れ真空アニールチャンバ内のサンプルとは真空（〜133 Pa）と下175℃まで徐々に加熱開始します。 2時間この温度を維持し、その後室温まで冷却します。室内の空気を記入し、現在のセルを呼び出すことができるサンプルを取り出します。 </li><li>前面透明電極のはんだのSn-Zn系合金（ガラス/ SnO 2を：F /あるZnO：Gaを、RIE処理により露出した部分）は、超音波はんだ付け装置を用いました。 </li></ol>外部量子効率の7測定（EQE） <ol><li>ポリイミドテープを使用して製造セルに遮光マスクを取り付け、電池ホルダーにマスクされたセルを設定します。 （ - ）のGa電極：表裏はんだ付け電極（+）及びAg / ZnOのにプローブを接続します。 </li><li>それぞれ、300-1,100 nmおよび5nmの波長範囲と、ステップと、製造者の指示に従ってEQE測定システムを使用して、EQEスペクトルを測定します。 </li></ol>太陽光発電電流 - 電圧（JV）文字の8.測定ISTICS <ol><li>アモルファスSi基準セルを使用するJ-V特性測定システムの光強度を較正します。 <ol><li> JV特性測定システムのセルホルダーにアモルファスSi基準セルを設定し、光を照射します。 </li><li> JV特性測定システムに搭載したデジタルマルチメーターを使用して光生成電流を読みます。光生成電流が基準セル（8.34ミリアンペア/ cm 2）での正しい値が表示されるまで光強度を調整します。 </li></ol></li><li>セルに遮光マスクを取り付け、電池ホルダーにマスクされたセルを設定します。 （ - ）のGa電極：表裏はんだ付け電極（+）及びAg / ZnOのにプローブを接続します。 </li><li>細胞に較正された光（100ミリワット/ cm 2で、1日）を照射し、0.02 Vの電圧ステップで、製造業者の指示に従ってJV特性測定システムを使用して、光生成電流を測定</li></ol>

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M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Improved+Pattern+Transfer+in+Soft+Lithography+Using+Composite+Stamps.">Improved Pattern Transfer in Soft Lithography Using Composite Stamps.</a> Langmuir. 18, 5314-5320 (2002).</li><li>Schmid, H., Michel, B. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Siloxane+Polymers+for+High-Resolution,+High-Accuracy+Soft+Lithography.">Siloxane Polymers for High-Resolution, High-Accuracy Soft Lithography.</a> Macromolecules. 33, 3042-3049 (2000).</li><li>Loo, Y. -. L., Willett, R. L., Baldwin, K. W., Rogers, J. A. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Interfacial+Chemistries+for+Nanoscale+Transfer+Printing.">Interfacial Chemistries for Nanoscale Transfer Printing.</a> J. Am. Chem. Soc. 124, 7654-7655 (2002).</li><li>Hylton, N. P., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Loss+mitigation+in+plasmonic+solar+cells:+aluminium+nanoparticles+for+broadband+photocurrent+enhancements+in+GaAs+photodiodes.">Loss mitigation in plasmonic solar cells: aluminium nanoparticles for broadband photocurrent enhancements in GaAs photodiodes.</a> Sci. Rep. 3, 2874-1-6 (2013).</li><li>Delamarche, E., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Microcontact+Printing+Using+Poly(dimethylsiloxane)+Stamps+Hydrophilized+by+Poly(ethylene+oxide)+Silanes.">Microcontact Printing Using Poly(dimethylsiloxane) Stamps Hydrophilized by Poly(ethylene oxide) Silanes.</a> Langmuir. 19, 8749-8758 (2003).</li><li>Mizuno, H., Sai, H., Matsubara, K., Kondo, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Plasmonic+Light+Trapping+in+Amorphous+Si+Solar+Cells+Using+Periodic+Ag+Nanodisk+Structures.">Plasmonic Light Trapping in Amorphous Si Solar Cells Using Periodic Ag Nanodisk Structures.</a> MRS Proc. , 1627-1613 (2014).</li></ol>

The authors have nothing to disclose.

この記事では、二層ハード/ソフトPDMS複合体はスタンプ材料として使用した。27この組み合わせは、正確に直径六方最密充填円形ホールアレイた金型内の親ナノ構造を複製することが不可欠であることが判明しました230ナノメートル、500ナノメートルの深さ、及び460nmでの穴中心間距離の。唯一のソフトPDMSを用いた場合、スタンプは常に不十分なナノ構造表面に生じた（反転ピラー構?...

技術分野の広い範囲で機能的なナノ構造のアプリケーションのための長年の要望がありました。この傾向への期待の一つが改善されたかの革新的なパフォーマンスにつながるデバイスアーキテクチャの新しいデザインを開くことです。太陽電池の分野では、例えば、金属ナノ構造の使用は、積極的に、それらの魅力的な光（ すなわち 、プラズモン）特性、効果的な集光システムを構築する1潜在的に有益で検討されている。2,3実際、いくつかの理論的研究4 -6ようなプラズモニック光トラップは、太陽電池セルで所望の金属ナノ構造を統合するための戦略を開発、従来のX線光学系（テクスチャ）が結果として光閉じ込め限界。7をベース超える効果を得ることができることを示唆しているが、これらを実現するためにますます重要になってきています理論的予測。 戦略の数が持っていますの成功した実証をもたらし10,11どちらも、金属膜8,9または予め合成された金属ナノ粒子の分散液。8-24これらには、例えば、単純な（低コスト）熱アニーリングこの課題に対応するために提案されてプラズモニック光トラップ。しかし、これらの手法により作製した金属ナノ構造体は、通常、理論モデルに適合するように挑戦していることを指摘しなければなりません。対照的に、このようなフォトリソグラフィー、電子ビームリソグラフィーなどの半導体産業では、伝統的なナノ加工技術、12,13はよく 、サブ100 nmのレベルより下の構造を制御することができますが、それらは多くの場合、太陽電池に適用するにはあまりにも高価で時間がかかり、低コストでどこに大面積の能力が不可欠です。このようなナノインプリントリソグラフィ、ソフトリソグラフィ14-16、17,18のような方法、低コスト、高スループット、およびナノスケールの制御と大面積の要件を満たすために</sup&gt;ナノ球体リソグラフィー、19-21とホールマスクコロイドリソグラフィー22-24有望だろう。これらの選択肢の中で、我々は、ソフトリソグラフィー、高度な転写印刷技術を開発した。25ナノ構造のポリ（ジメチルシロキサン）（PDMS）スタンプとブロックコポリマー系接着剤層を使用して、注文した金属ナノ構造のパターニングが容易技術の数に達成することができ太陽電池用のものを含む関連物質。 この記事の焦点は、太陽電池構造を既存のに有効な光トラッピングプラズモニックナノ構造を組み込むために私たちの転写印刷方法の詳細な手順を記述することです。金属および太陽電池の他の種類は、このアプローチと互換性があるが、太陽電池は、この研究に選択した（ 図1）、26：実証場合のように、銀ナノディスクおよび薄膜は、微結晶シリコン（HμC-Si）を水素化しました。一緒にそのプロセスとシンプルさが、アプローチは、デバイスと機能性金属ナノ構造を統合するための便利なツールなどの多様な研究者が興味を持つであろう。

<table border="0" cellpadding="0" cellspacing="0" style="width:864px;" width="863">
	<colgroup>
		<col />
		<col />
		<col />
		<col />
	</colgroup>
	<tbody>
		<tr height="42">
			<td height="42" style="height:42px;width:216px;">Nanohole mold</td>
			<td style="width:200px;">Scivax 
			http://www.scivax.com</td>
			<td style="width:129px;">FLH230/500-120</td>
			<td style="width:319px;"></td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:216px;">PTFE container</td>
			<td style="width:200px;">Eishin 
			http://www.colbyeishin.com</td>
			<td style="width:129px;">n/a</td>
			<td style="width:319px;">Custom made</td>
		</tr>
		<tr height="21">
			<td height="63" rowspan="3" style="height:63px;width:216px;">Hard-PDMS materials</td>
			<td rowspan="3" style="width:200px;">Gelest 
			http://www.gelest.com/gelest/forms/Home/home.aspx</td>
			<td style="width:129px;">VDT-731</td>
			<td>Vinylmethylsiloxane-dimethylsiloxane copolymer</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:129px;">SIP6831.1</td>
			<td>Pt-divinyltetramethyldisiloxane complex</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:129px;">HMS-301</td>
			<td>Methylhydrosiloxane-dimethylsiloxane copolymer</td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">2,4,6,8-tetramethyltetra-vinylcyclotetrasiloxane</td>
			<td style="width:200px;">Sigma-Aldrich 
			http://www.sigmaaldrich.com</td>
			<td style="width:129px;">396281</td>
			<td>Additive for hard-PDMS</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:216px;">Soft-PDMS materials</td>
			<td style="width:200px;">Dow Corning 
			http://www.dowcorning.com</td>
			<td style="width:129px;">Sylgard-184</td>
			<td>Silicone precursor</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;">PS-b-P2VP</td>
			<td style="width:200px;">Polymer Source 
			http://polymersource.com</td>
			<td style="width:129px;">P5742-S2VP</td>
			<td>Mn &#215; 103 = 133-b-132</td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">Glass/SnO2:F substrates</td>
			<td style="width:200px;">Asahi Glass Co. Ltd. 
			http://www.agc.com/english/company</td>
			<td style="width:129px;">Type VU</td>
			<td style="width:319px;">Chemical mechanical polished by D-process Inc. (http://d-process.jp/index.html) to flatten the surfaces</td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">Detergent</td>
			<td style="width:200px;">Fruuchi Chemical Co. 
			http://www.furuchi.co.jp/eng/main.htm</td>
			<td style="width:129px;">Semico-clean 56</td>
			<td style="width:319px;">Used for the cleaning of Glass/SnO2:F substrates</td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">ZnO:Ga supputtering target</td>
			<td style="width:200px;">AGC Ceramics Co. Ltd. 
			http://www.agcc.jp/2005/en/index.html</td>
			<td style="width:129px;">5.7GZO</td>
			<td></td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">Ag supputtering target</td>
			<td style="width:200px;">Mitsubishi Materials Co. 
			http://www.mitsubishicarbide.com/mmc/en/index.html</td>
			<td style="width:129px;">4NAg</td>
			<td></td>
		</tr>
		<tr height="84">
			<td height="84" style="height:84px;width:216px;">Double-sided adhesive tape</td>
			<td style="width:200px;">Nisshin EM Co. 
			http://nisshin-em.co.jp/information/carbontape.html</td>
			<td style="width:129px;">732</td>
			<td></td>
		</tr>
		<tr height="120">
			<td height="120" style="height:120px;width:216px;">Polyimide tape</td>
			<td style="width:200px;">Dupont 
			http://www.dupont.com/products-and-services/membranes-films/polyimide-films/brands/kapton-polyimide-film.html</td>
			<td style="width:129px;">Kapton 650S#25</td>
			<td></td>
		</tr>
		<tr height="84">
			<td height="84" style="height:84px;width:216px;">Sn-Zn-based Solder</td>
			<td style="width:200px;">Kuroda Techno Co., Ltd. 
			http://www.kuroda-techno.com/english/index.html</td>
			<td style="width:129px;">Cerasolzer AL-200</td>
			<td></td>
		</tr>
		<tr height="84">
			<td height="84" style="height:84px;width:216px;">Digital micro pipette</td>
			<td style="width:200px;">Nichiryo 
			http://www.nichiryo.co.jp/en/product/pipette/ex/index.html</td>
			<td style="width:129px;">00-NPX2-20 
			00-NPX2-200 
			00-NPX2-1000</td>
			<td></td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">Heating chamber</td>
			<td style="width:200px;">Tokyo Rikakikai Co., Ltd. 
			http://www.eyelaworld.com/product_view.php?id=120</td>
			<td style="width:129px;">VOS-201SD</td>
			<td></td>
		</tr>
		<tr height="84">
			<td height="126" rowspan="2" style="height:126px;width:216px;">Electron beam evaporator 
			(two types)</td>
			<td style="width:200px;">Canon-Anelva 
			https://www.canon-anelva.co.jp/english/index.html</td>
			<td style="width:129px;">n/a</td>
			<td style="width:319px;">Custom made</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:200px;">Arios 
			http://arios.com/</td>
			<td style="width:129px;">n/a</td>
			<td>Custom made</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:216px;">Sputtering system</td>
			<td style="width:200px;">Ulvac 
			http://www.ulvac.co.jp/en</td>
			<td style="width:129px;">SBR-2306</td>
			<td style="width:319px;"></td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">PECVD system&#160;</td>
			<td style="width:200px;">Shimadzu Emit Co. Ltd. 
			http://www.shimadzu.co.jp/emit/en/</td>
			<td style="width:129px;">SLCM-13</td>
			<td style="width:319px;"></td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">Ar plasma system&#160;</td>
			<td style="width:200px;">Diner Electric Gmbh 
			http://www.plasma.de/index.html</td>
			<td style="width:129px;">Femto&#160;</td>
			<td></td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:216px;">RIE system</td>
			<td style="width:200px;">Samco Inc. 
			http://www.samcointl.com</td>
			<td style="width:129px;">RIE-10NR</td>
			<td></td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">Ultrasonic soldering device</td>
			<td style="width:200px;">Colby-Eishin Enterprises, Inc. 
			http://www.colbyeishin.com/sub_sunbonder.htm</td>
			<td style="width:129px;">SUNBONDER</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">EQE measurement system</td>
			<td rowspan="3" style="width:200px;">Bunkoukeiki Co. Ltd. 
			http://www.bunkoukeiki.co.jp/</td>
			<td style="width:129px;">CEP-25BXS</td>
			<td></td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:216px;">J-V characteristics measurement system</td>
			<td style="width:129px;">OTENTOSUN-5S-I/V</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">Amorphous Si reference cell</td>
			<td style="width:129px;">WPVS-NPB-S1</td>
			<td>For light intensity calibration</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:216px;">Digital multi-meter</td>
			<td style="width:200px;">Keithley Instruments Inc. 
			http://www.keithley.com/</td>
			<td style="width:129px;">2400</td>
			<td></td>
		</tr>
	</tbody>
</table>

integration of light trapping silver nanostructures in hydrogenated microcrystalline silicon solar cells by transfer printing

One of the potential applications of metal nanostructures is light trapping in solar cells, where unique optical properties of nanosized metals, commonly known as plasmonic effects, play an important role. Research in this field has, however, been impeded owing to the difficulty of fabricating devices containing the desired functional metal nanostructures. In order to provide a viable strategy to this issue, we herein show a transfer printing-based approach that allows the quick and low-cost integration of designed metal nanostructures with a variety of device architectures, including solar cells. Nanopillar poly(dimethylsiloxane) (PDMS) stamps were fabricated from a commercially available nanohole plastic film as a master mold. On this nanopatterned PDMS stamps, Ag films were deposited, which were then transfer-printed onto block copolymer (binding layer)-coated hydrogenated microcrystalline Si (&#181;c-Si:H) surface to afford ordered Ag nanodisk structures. It was confirmed that the resulting Ag nanodisk-incorporated &#181;c-Si:H solar cells show higher performances compared to a cell without the transfer-printed Ag nanodisks, thanks to plasmonic light trapping effect derived from the Ag nanodisks. Because of the simplicity and versatility, further device application would also be feasible thorough this approach.

H（N層）： 図2は、微結晶シリコンの表面に銀ナノディスクの転写印刷のための一般的なプロセスの概要を説明します。簡単に説明すると、Ag膜（厚さ：10-80 nm）は第1の電子ビーム蒸着によってナノピラーPDMSスタンプの表面上に堆積されます。 H N層：並行して、PS-bは-P2VP溶液を新たに調製した微結晶シリコンの表面にスピンコートです。その後、エタノール?...

Watch this Scientific Journal Video about Integration of Light Trapping Silver Nanostructures in Hydrogenated Microcrystalline Silicon Solar Cells by Transfer Printing at JoVE.com

Integration of Light Trapping Silver Nanostructures in Hydrogenated Microcrystalline Silicon Solar Cells by Transfer Printing

A viable transfer printing-based methodology to introduce plasmonic metal nanostructures in solar cells is described. Using nanopillar poly(dimethylsiloxane) stamps, an Ag-based ordered nanodisk array was integrated with standard hydrogenated microcrystalline Si solar cells, which led to improved device performances due to plasmonic light trapping.

転写印刷により水素化微結晶シリコン太陽電池の光トラッピング銀ナノ構造の統合

One of the potential applications of metal nanostructures is light trapping in solar cells, where unique optical properties of nanosized metals, commonly ...

integration-light-trapping-silver-nanostructures-hydrogenated

Research

JoVE Journal

Engineering

7.7K ビュー.  National Institute of Advanced Industrial Science and Technology, Koriyama, Fukushima, Japan. A viable transfer printing-based methodology to introduce plasmonic metal nanostructures in solar cells is described. Using nanopillar poly(dimethylsiloxane) stamps, an Ag-based ordered nanodisk array was integrated with standard hydrogenated microcrystalline Si solar cells, which led to improved device performances due to plasmonic light trapping.

ビデオ: Integration of Light Trapping Silver Nanostructures in Hydrogenated Microcrystalline Silicon Solar Cells by Transfer Printing

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach.
The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles.
To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 &mu;m thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm2, which can be increased up to 17-18 mA/cm2 (~25% higher) after application of a simple diffuse back reflector made of a white paint.
To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23&deg;C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing conditions. An optimised nanoparticle array alone results in cell Jsc enhancement of about 28%, similar to the effect of the diffuse reflector. The photocurrent can be further increased by coating the nanoparticles by a low refractive index dielectric, like MgF2, and applying the diffused reflector. The complete plasmonic cell structure comprises the polycrystalline silicon film, a silver nanoparticle array, a layer of MgF2, and a diffuse reflector. The Jsc for such cell is 21-23 mA/cm2, up to 45% higher than Jsc of the original cell without light-trapping or ~25% higher than Jsc for the cell with the diffuse reflector only.
Introduction
Light-trapping in silicon solar cells is commonly achieved via light scattering at textured interfaces. Scattered light travels through a cell at oblique angles for a longer distance and when such angles exceed the critical angle at the cell interfaces the light is permanently trapped in the cell by total internal reflection (Animation 1: Light-trapping). Although this scheme works well for most solar cells, there are developing technologies where ultra-thin Si layers are produced planar (e.g. layer-transfer technologies and epitaxial c-Si layers) 1 and or when such layers are not compatible with textures substrates (e.g. evaporated silicon) 2. For such originally planar Si layer alternative light trapping approaches, such as diffuse white paint reflector 3, silicon plasma texturing 4 or high refractive index nanoparticle reflector 5 have been suggested.
Metal nanoparticles can effectively scatter incident light into a higher refractive index material, like silicon, due to the surface plasmon resonance effect 6. They also can be easily formed on the planar silicon cell surface thus offering a light-trapping approach alternative to texturing. For a nanoparticle located at the air-silicon interface the scattered light fraction coupled into silicon exceeds 95% and a large faction of that light is scattered at angles above critical providing nearly ideal light-trapping condition (Animation 2: Plasmons on NP). The resonance can be tuned to the wavelength region, which is most important for a particular cell material and design, by varying the nanoparticle average size, surface coverage and local dielectric environment 6,7. Theoretical design principles of plasmonic nanoparticle solar cells have been suggested 8. In practice, Ag nanoparticle array is an ideal light-trapping partner for poly-Si thin-film solar cells because most of these design principle are naturally met. The simplest way of forming nanoparticles by thermal annealing of a thin precursor Ag film results in a random array with a relatively wide size and shape distribution, which is particularly suitable for light-trapping because such an array has a wide resonance peak, covering the wavelength range of 700-900 nm, important for poly-Si solar cell performance. The nanoparticle array can only be located on the rear poly-Si cell surface thus avoiding destructive interference between incident and scattered light which occurs for front-located nanoparticles 9. Moreover, poly-Si thin-film cells do not requires a passivating layer and the flat base-shaped nanoparticles (that naturally result from thermal annealing of a metal film) can be directly placed on silicon further increases plasmonic scattering efficiency due to surface plasmon-polariton resonance 10.
The cell with the plasmonic nanoparticle array as described above can have a photocurrent about 28% higher than the original cell. However, the array still transmits a significant amount of light which escapes through the rear of the cell and does not contribute into the current. This loss can be mitigated by adding a rear reflector to allow catching transmitted light and re-directing it back to the cell. Providing sufficient distance between the reflector and the nanoparticles (a few hundred nanometers) the reflected light will then experience one more plasmonic scattering event while passing through the nanoparticle array on re-entering the cell and the reflector itself can be made diffuse - both effects further facilitating light scattering and hence light-trapping. Importantly, the Ag nanoparticles have to be encapsulated with an inert and low refractive index dielectric, like MgF2 or SiO2, from the rear reflector to avoid mechanical and chemical damage 7. Low refractive index for this cladding layer is required to maintain a high coupling fraction into silicon and larger scattering angles, which are ensured by the high optical contrast between the media on both sides of the nanoparticle, silicon and dielectric 6. The photocurrent of the plasmonic cell with the diffuse rear reflector can be up to 45% higher than the current of the original cell or up to 25% higher than the current of an equivalent cell with the diffuse reflector only.

Polycrystalline silicon thin-film solar cells on glass are fabricated by deposition of boron and phosphorous doped silicon layers followed by crystallisation, defect passivation and metallisation. Plasmonic light-trapping is introduced by forming Ag nanoparticles on the silicon cell surface capped with a diffused reflector resulting in ~45% photocurrent enhancement.

プラズモニック·強化されたライトトラップによる多結晶シリコン薄膜太陽電池

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To ...

工学

A Method to Fabricate Disconnected Silver Nanostructures in 3D

The standard nanofabrication toolkit includes techniques primarily aimed at creating 2D patterns in dielectric media. Creating metal patterns on a submicron scale requires a combination of nanofabrication tools and several material processing steps. For example, steps to create planar metal structures using ultraviolet photolithography and electron-beam lithography can include sample exposure, sample development, metal deposition, and metal liftoff. To create 3D metal structures, the sequence is repeated multiple times. The complexity and difficulty of stacking and aligning multiple layers limits practical implementations of 3D metal structuring using standard nanofabrication tools. Femtosecond-laser direct-writing has emerged as a pre-eminent technique for 3D nanofabrication.1,2 Femtosecond lasers are frequently used to create 3D patterns in polymers and glasses.3-7 However, 3D metal direct-writing remains a challenge. Here, we describe a method to fabricate silver nanostructures embedded inside a polymer matrix using a femtosecond laser centered at 800 nm. The method enables the fabrication of patterns not feasible using other techniques, such as 3D arrays of disconnected silver voxels.8 Disconnected 3D metal patterns are useful for metamaterials where unit cells are not in contact with each other,9 such as coupled metal dot10,11or coupled metal rod12,13 resonators. Potential applications include negative index metamaterials, invisibility cloaks, and perfect lenses.
In femtosecond-laser direct-writing, the laser wavelength is chosen such that photons are not linearly absorbed in the target medium. When the laser pulse duration is compressed to the femtosecond time scale and the radiation is tightly focused inside the target, the extremely high intensity induces nonlinear absorption. Multiple photons are absorbed simultaneously to cause electronic transitions that lead to material modification within the focused region. Using this approach, one can form structures in the bulk of a material rather than on its surface.
Most work on 3D direct metal writing has focused on creating self-supported metal structures.14-16 The method described here yields sub-micrometer silver structures that do not need to be self-supported because they are embedded inside a matrix. A doped polymer matrix is prepared using a mixture of silver nitrate (AgNO3), polyvinylpyrrolidone (PVP) and water (H2O). Samples are then patterned by irradiation with an 11-MHz femtosecond laser producing 50-fs pulses. During irradiation, photoreduction of silver ions is induced through nonlinear absorption, creating an aggregate of silver nanoparticles in the focal region. Using this approach we create silver patterns embedded in a doped PVP matrix. Adding 3D translation of the sample extends the patterning to three dimensions.

Femtosecond-laser direct-writing is frequently used to create three-dimensional (3D) patterns in polymers and glasses. However, patterning metals in 3D remains a challenge. We describe a method for fabricating silver nanostructures embedded inside a polymer matrix using a femtosecond laser centered at 800 nm.

3Dで切断された銀ナノ構造体を製造する方法

The standard nanofabrication toolkit includes  techniques primarily aimed at creating 2D patterns in dielectric media. Creating  metal patterns on a ...

Making Record-efficiency SnS Solar Cells by Thermal Evaporation and Atomic Layer Deposition

Tin sulfide (SnS) is a candidate absorber material for Earth-abundant, non-toxic solar cells. SnS offers easy phase control and rapid growth by congruent thermal evaporation, and it absorbs visible light strongly. However, for a long time the record power conversion efficiency of SnS solar cells remained below 2%. Recently we demonstrated new certified record efficiencies of 4.36% using SnS deposited by atomic layer deposition, and 3.88% using thermal evaporation. Here the fabrication procedure for these record solar cells is described, and the statistical distribution of the fabrication process is reported. The standard deviation of efficiency measured on a single substrate is typically over 0.5%. All steps including substrate selection and cleaning, Mo sputtering for the rear contact (cathode), SnS deposition, annealing, surface passivation, Zn(O,S) buffer layer selection and deposition, transparent conductor (anode) deposition, and metallization are described. On each substrate we fabricate 11 individual devices, each with active area 0.25 cm2. Further, a system for high throughput measurements of current-voltage curves under simulated solar light, and external quantum efficiency measurement with variable light bias is described. With this system we are able to measure full data sets on all 11 devices in an automated manner and in minimal time. These results illustrate the value of studying large sample sets, rather than focusing narrowly on the highest performing devices. Large data sets help us to distinguish and remedy individual loss mechanisms affecting our devices.

Tin sulfide (SnS) is a candidate material for Earth-abundant, non-toxic solar cells. Here, we demonstrate the fabrication procedure of the SnS solar cells employing atomic layer deposition, which yields 4.36% certified power conversion efficiency, and thermal evaporation which yields 3.88%.

熱蒸着および原子層堆積法によって記録し、効率のSnS太陽電池を作ります

Tin sulfide (SnS) is a candidate absorber material for Earth-abundant, non-toxic solar cells. SnS offers easy phase control and rapid growth by congruent ...

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

The wettability of silicon (Si) is one of the important parameters in the technology of surface functionalization of this material and fabrication of biosensing devices. We report on a protocol of using KrF and ArF lasers irradiating Si (001) samples immersed in a liquid environment with low number of pulses and operating at moderately low pulse fluences to induce Si wettability modification. Wafers immersed for up to 4 hr in a 0.01% H2O2/H2O solution did not show measurable change in their initial contact angle (CA) ~75&#176;. However, the 500-pulse KrF and ArF lasers irradiation of such wafers in a microchamber filled with 0.01% H2O2/H2O solution at 250 and 65 mJ/cm2, respectively, has decreased the CA to near 15&#176;, indicating the formation of a superhydrophilic surface. The formation of OH-terminated Si (001), with no measurable change of the wafer&#8217;s surface morphology, has been confirmed by X-ray photoelectron spectroscopy and atomic force microscopy measurements. The selective area irradiated samples were then immersed in a biotin-conjugated fluorescein-stained nanospheres solution for 2 hr, resulting in a successful immobilization of the nanospheres in the non-irradiated area. This illustrates the potential of&#160;the method for selective area biofunctionalization and fabrication of advanced Si-based biosensing architectures. We also describe a similar protocol of irradiation of wafers immersed in methanol (CH3OH) using ArF laser operating at pulse fluence of 65 mJ/cm2 and in situ formation of a strongly hydrophobic surface of Si (001) with the CA of 103&#176;. The XPS results indicate ArF laser induced formation of Si&#8211;(OCH3)x compounds responsible for the observed hydrophobicity. However, no such compounds were found by XPS on the Si surface irradiated by KrF laser in methanol, demonstrating the inability of the KrF laser to photodissociate methanol and create -OCH3 radicals.

We report on a process of in situ alteration of HF treated Si (001) surface into a hydrophilic or hydrophobic state by irradiating samples in microfluidic chambers filled with&#160;H2O2/H2O solution (0.01%-0.5%) or methanol solutions using pulsed UV laser of a relative low pulse fluence.

液体環境におけるパルスUVレーザー照射によるシリコン表面の濡れ性の選択エリア変更

The wettability of silicon (Si) is one of the important parameters in the technology of surface functionalization of this material and fabrication of ...

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

A procedure to measure the bulk lifetime (&#62;100 &#181;sec) of silicon wafers by temporarily attaining a very high level of surface passivation when immersing the wafers in hydrofluoric acid (HF) is presented. By this procedure three critical steps are required to attain the bulk lifetime. Firstly, prior to immersing silicon wafers into HF, they are chemically cleaned and subsequently etched in 25% tetramethylammonium hydroxide. Secondly, the chemically treated wafers are then placed into a large plastic container filled with a mixture of HF and hydrochloric acid, and then centered over an inductive coil for photoconductance (PC) measurements. Thirdly, to inhibit surface recombination and measure the bulk lifetime, the wafers are illuminated at 0.2 suns for 1 min&#160;using a halogen lamp, the illumination is switched off, and a PC measurement is immediately taken. By this procedure, the characteristics of bulk silicon defects can be accurately determined. Furthermore, it is anticipated that a sensitive RT surface passivation technique will be imperative for examining bulk silicon defects when their concentration is low (&#60;1012 cm-3).

A RT liquid surface passivation technique to investigate the recombination activity of bulk silicon defects is described. For the technique to be successful, three critical steps are required: (i) chemical cleaning and etching of silicon, (ii) immersion of silicon in 15% hydrofluoric acid and (iii) illumination for 1 min.

ライト強化フッ酸不動態化：バルクシリコン欠陥を検出するための高感度テクニック

A procedure to measure the bulk lifetime (&#62;100 &#181;sec) of silicon wafers by temporarily attaining a very high level of surface passivation when ...

Printing Fabrication of Bulk Heterojunction Solar Cells and In Situ Morphology Characterization

Polymer-based materials hold promise as low-cost, flexible efficient photovoltaic devices. Most laboratory efforts to achieve high performance devices have used devices prepared by spin coating, a process that is not amenable to large-scale fabrication. This mismatch in device fabrication makes it difficult to translate quantitative results obtained in the laboratory to the commercial level, making optimization difficult. Using a mini-slot die coater, this mismatch can be resolved by translating the commercial process to the laboratory and characterizing the structure formation in the active layer of the device in real time and in situ as films are coated onto a substrate. The evolution of the morphology was characterized under different conditions, allowing us to propose a mechanism by which the structures form and grow. This mini-slot die coater offers a simple, convenient, material efficient route by which the morphology in the active layer can be optimized under industrially relevant conditions. The goal of this protocol is to show experimental details of how a solar cell device is fabricated using a mini-slot die coater and technical details of running in situ structure characterization using the mini-slot die coater.

Printing Fabrication of Bulk Heterojunction Solar Cells and In Situ Morphology Characterization

Here, we present a protocol to fabricate organic thin film solar cells using a mini-slot die coater and related in-line structure characterizations using synchrotron scattering techniques.

バルクヘテロ接合太陽電池の印刷作製と<em&gt;その場で</em&gt;形態キャラクタリゼーション

Polymer-based materials hold promise as low-cost, flexible efficient photovoltaic devices. Most laboratory efforts to achieve high performance devices ...

Digital Printing of Titanium Dioxide for Dye Sensitized Solar Cells

Silicon solar cell manufacturing is an expensive and high energy consuming process. In contrast, dye sensitized solar cell production is less environmentally damaging with lower processing temperatures presenting a viable and low cost alternative to conventional production. This paper further enhances these environmental credentials by evaluating the digital printing and therefore additive production route for these cells. This is achieved here by investigating the formation and performance of a metal oxide photoelectrode using nanoparticle sized titanium dioxide. An ink-jettable material was formulated, characterized and printed with a piezoelectric inkjet head to produce a 2.6 &#181;m thick layer. The resultant printed layer was fabricated into a functioning cell with an active area of 0.25 cm2 and a power conversion efficiency of 3.5%. The binder-free formulation resulted in a reduced processing temperature of 250 &#176;C, compatible with flexible polyamide substrates which are stable up to temperatures of 350 &#730;C. The authors are continuing to develop this process route by investigating inkjet printing of other layers within dye sensitized solar cells.

This paper investigates the suitability of inkjet printing for the manufacturing of dye-sensitized solar cells. A binder-free TiO2 nanoparticle ink was formulated and printed onto a FTO glass substrate. The printed layer was fabricated into a cell with an active area of 0.25 cm2 and an efficiency of 3.5%.

色素増感太陽電池用二酸化チタンのデジタル印刷

Silicon solar cell manufacturing is an expensive and high energy consuming process. In contrast, dye sensitized solar cell production is less ...

Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells

Here, we demonstrate the incorporation of monovalent cation additives into CH3NH3PbI3 perovskite in order to adjust the optical, excitonic, and electrical properties. The possibility of doping was investigated by adding monovalent cation halides with similar ionic radii to Pb2+, including Cu+, Na+, and Ag+. A shift in the Fermi level and a remarkable decrease of sub-bandgap optical absorption, along with a lower energetic disorder in the perovskite, was achieved. An order-of-magnitude enhancement in the bulk hole mobility and a significant reduction of transport activation energy within an additive-based perovskite device was attained. The confluence of the aforementioned improved properties in the presence of these cations led to an enhancement in the photovoltaic parameters of the perovskite solar cell. An increase of 70 mV in open circuit voltage for AgI and a 2 mA/cm2 improvement in photocurrent density for NaI- and CuBr-based solar cells were achieved compared to the pristine device. Our work paves the way for further improvements in the optoelectronic quality of CH3NH3PbI3 perovskite and subsequent devices. It highlights a new avenue for investigations on the role of dopant impurities in crystallization and controls the electronic defect density in perovskite structures.

Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells

Here, we present a protocol to adjust the properties of solution-processed CH3NH3PbI3 through the incorporation of monovalent cation additives in order to achieve highly efficient perovskite solar cells.

CHの一価の陽イオンドーピング<sub&gt; 3</sub&gt; NH<sub&gt; 3</sub&gt; PBI<sub&gt; 3</sub&gt;効率的なペロブスカイト太陽電池用

Here, we demonstrate the incorporation of monovalent cation additives into CH3NH3PbI3 perovskite in order to adjust the optical, excitonic, and electrical ...

Challenges in Rheological Characterization of Highly Concentrated Suspensions &#8212; A Case Study for Screen-printing Silver Pastes

A comprehensive rheological characterization of highly concentrated suspensions or pastes is mandatory for a targeted product development meeting the manifold requirements during processing and application of such complex fluids. In this investigation, measuring protocols for a conclusive assessment of different process relevant rheological parameters have been evaluated. This includes the determination of yield stress, viscosity, wall slip velocity, structural recovery after large deformation and elongation at break as well as tensile force during filament stretching.
The importance of concomitant video recordings during parallel-plate rotational rheometry for a significant determination of rheological quantities is demonstrated. The deformation profile and flow field at the sample edge can be determined using appropriate markers. Thus, measurement parameter settings and plate roughness values can be identified for which yield stress and viscosity measurements are possible. Slip velocity can be measured directly and measuring conditions at which plug flow, shear banding or sample spillover occur can be identified clearly. 
Video recordings further confirm that the change in shear moduli observed during three stage oscillatory shear tests with small deformation amplitude in stage I and III but large oscillation amplitude in stage II can be directly attributed to structural break down and recovery. For the pastes investigated here, the degree of irreversible, shear-induced structural change increases with increasing deformation amplitude in stage II until a saturation is reached at deformations corresponding to the crossover of G' and G'', but the irreversible damage is independent of the duration of large amplitude shear. 
A capillary breakup elongational rheometer and a tensile tester have been used to characterize deformation and breakup behavior of highly filled pastes in uniaxial elongation. Significant differences were observed in all experiments described above for two commercial screen-printing silver pastes used for front side metallization of Si-solar cells.

Challenges in Rheological Characterization of Highly Concentrated Suspensions &amp;#8212; A Case Study for Screen-printing Silver Pastes

A protocol for a robust and application relevant rheological characterization of highly concentrated suspensions is presented. Silver pastes used for screen-printing application in solar cell production are employed as model systems.

高度に濃縮された懸濁液のレオロジー特性評価における課題 - スクリーン印刷シルバーペーストのためのケーススタディ

A comprehensive rheological characterization of highly concentrated suspensions or pastes is mandatory for a targeted product development meeting the ...

In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for Cu(In,Ga)Se2 Solar Cells

The levelized cost of electricity (LCOE) of photovoltaic (PV) systems is determined by, among other factors, the PV module reliability. Better prediction of degradation mechanisms and prevention of module field failure can consequently decrease investment risks as well as increase the electricity yield. An improved knowledge level can for these reasons significantly decrease the total costs of PV electricity. 
In order to better understand and minimize the degradation of PV modules, the occurring degradation mechanisms and conditions should be identified. This should preferably happen under combined stresses, since modules in the field are also simultaneously exposed to multiple stress factors. Therefore, two 'Combined Stress test with in situ measurement' setups have been designed and constructed. These setups allow the simultaneous use of humidity, temperature, illumination, and electrical biases as independently controlled stress factors on solar cells and minimodules. The setups also allow real-time monitoring of the electrical properties of these samples. This protocol presents these setups and describes the experimental possibilities. Moreover, results obtained with these setups are also presented: various examples about the influence of both deposition and degradation conditions on the stability of thin film Cu(In,Ga)Se2 (CIGS) as well as Cu2ZnSnSe4 (CZTS) solar cells are described. Results on the temperature dependency of CIGS solar cells are also presented.

In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for CuIn,GaSe2 Solar Cells

Two &#39;Combined Stress test with in situ measurement&#39; setups, which allow real-time monitoring of accelerated degradation of solar cells and modules, were designed and constructed. These setups allow the simultaneous use of humidity, temperature, electrical biases, and illumination as independently controlled stress factors. The setups and various experiments executed are presented.

その場で太陽電池とモジュールの加速劣化のモニタリング: Cu (In, Ga) Se2太陽電池に関するケーススタディ

The levelized cost of electricity (LCOE) of photovoltaic (PV) systems is determined by, among other factors, the PV module reliability. Better prediction ...