CSGソーラーPty。株式会社ジン·ラオは、NSW副学長ポストドクトラルフェローシップの彼女の大学を認めてこの研究プロジェクトは、リンケージ助成金を介して、オーストラリアの研究評議会でサポートされています。 SEM画像は、NSW大学の電子顕微鏡ユニットから提供された機器を使用して、公園をJongsungで撮影されました。

1。多結晶シリコン太陽電池の作製（アニメーション3） <ol><li>シリコン膜の堆積<ol class="lalpha"><li> ℃で一晩&lt;3E-8 Torrのベー​​ス圧力に到達するために100〜でそれを焼成することにより、電子ビーム蒸着ツールを準備します。 150℃スタンバイ温度にプリセットサンプルヒーター。 </li><li> 5x5のcm 2の （または10×10 cm 2）の基板ホウケイ酸ガラス（SCHOTT Borofloat33）、窒化ケイ素の約80 nmの（N 2とSiH 4の混合物からPECVDによって調製した）で被覆した厚さ1.1または3.3ミリメートル、からなる基板を使用しています。 </li><li>ほこりを除去し、試料ホルダーにそれを配置する乾燥窒素で基板の表面を吹く。 、ロードロックを発散サンプルをロードし、圧力&lt;1E5 Torrにダウンロードロックポンプ、メインチャンバーにサンプルを転送します。 250℃のセットポイントにヒーターを起動します。圧力が8E-8トール以下に到達した約20分間ポンプを備えています。 </li><li>そのドーパントを確認してくださいソースとケイ素源シャッターが閉じられます。スタンバイ温度にプリセットドーパント源温度は、1250℃、ホウ素源温度は700℃でリン源温度、すなわち電子銃を開始し、徐々に電子銃の電流を増加させることにより坩堝内のシリコンを溶かす。 </li><li>必要な電流が到達したときに、P -3 1E20 cmで35nmのエミッタ：PとBの必要な濃度でドープされたシリコン層を蒸発させる（前のキャリブレーションから、この電流は、電子銃とSi源条件の異なる場合があります）として水晶モニタで測定したBの-3 4E19 cmで100nmの裏面フィールド（BSF）正確なドーパント濃度が一定のSiの堆積速度を照合することによって達成され、; Bの-3 5E15 cmで2〜3μmの吸収（QCM）、特定のドーパント源の温度が、SIMSのキャリブレーションから確立されたリレーションシップを使用して。 </li><li>蒸発は、ヒーターのスイッチをオフに行われた後、約10分間、サンプルをクールダウン。トランスロードロックのサンプルFERは、ゲートバルブを閉じ、ロードロックを発散し、シリコン膜でサンプルをアンロードします。 </li></ol></li><li>シリコン結晶 サンプルは10×10 cm 2である場合、それは結晶化する前に4 5x5のcm 2のセルサイズのピースにカットすることができます。粗と窒化ケイ素コーティングされたショットRobaxガラス（付着を避けるために）作られたホルダーにガラス基板上に堆積シリコン膜（最大Si膜）を配置します。窒素パージされたオーブンに負荷が200から300℃に予熱℃で3時〜5℃/ minで600の温度を立ち上げ、30時間のためにアニールする。サンプルをアンロードする前に、オーブンヒーターの電源を入れ、〜200℃（2〜3時間）に自然にオーブンがクールダウンしましょう​​。サンプルは、結晶中にシリコン収縮に起因する凹面形状を有することができる。それは以下の急速熱処理中に平らにします。 </li><li>ドーパントの活性化とアニール欠陥（RTA） グラファイトとlで作られたホルダーに結晶化した膜でサンプルを置きますアルゴンでパージし、急速な熱プロセッサにOAD。 ℃、1℃/ sが、その後1000℃まで20℃/秒、約100に自然にしてクールで1分間押し°Cおよびアンロード600の温度を立ち上げる。 </li><li>表面酸化物の除去 直ちに結晶化とRTAの間にシリコン膜上に形成された水素化の前に表面酸化物は、ベアシリコン膜の表面が水素にさらされていることを確認するために削除する必要があります。シリコン表面が疎水性になるまで5％フッ酸溶液中にアニールした試料を浸漬（30〜100秒）。脱イオン水ですすぎ、窒素銃で乾燥させます。 </li><li>欠陥パッシベーション リモート水素プラズマ源を備えた真空チャンバ内にサンプルをロードします。まで〜620 &lt;1E-4 Torrで、ヒートアップサンプルでは、​​°C、50から100ミリトール圧力を設定してアルゴン/水素混合物の流れ（50:150 SCCM）は、3.5 kWにおけるプラズマ源を起動しオンにポンプダウンマイクロ波電力と約10分間の処理を続行します。 maintaながらヒーターをオフにする温度はプラズマをオフにしてガスの流れを停止する前に、350°Cの下に落下するまで、別の10〜15分間プラズマをining。温度が200℃のときにサンプルをアンロードする</li><li>セルの金属被覆 セルの金属被覆は、11に詳細に記載されている連続したフォトリソグラフィパターニング、Al膜の堆積とエッチングの一連の手順で行われる。アニメーション3の最後のスライドに示すように最後のセルが見える。メタライズドセルのクローズアップビューを図1に示されています。 </li><li>メタライズドセルの外部量子効率を測定します。 </li></ol> 2。プラズモニックのAgナノ粒子（アニメーション4）の作製<ol><li>ほこりを除去し、銀顆粒（0.3〜0.5グラム）を充填したWボートを含む熱蒸発器にサンプルをロードするために乾燥窒素で金属化細胞表面を吹く。 2〜3E-5 Torrのベー​​ス圧力に蒸発チャンバーをポンプダウン。 Agのパラメータを持つプログラムQCM：密度10.50とZ比0.529。 </li><li>サンプルのシャッターが閉まっていること、（ようにビューポートを介して観察）WボートヒーターをオンにするとAg顆粒が溶けるまで、8E-5 Torrの上記の圧力上昇を避けるために徐々に十分な電流を増加させることを確認してください。圧力が0.1から0.2Å/ sでのAg析出速度（校正から）対応するセットポイントに電流を設定し、成膜プロセスを開始するためにシャッターを開いて安定した後。 </li><li> QCMを用いて成長してAg膜の厚さを監視し、14nmの厚さに達したときにシャッターを閉じます。 Wのボートは約15分間のクールダウンできるように、サンプルをアンロードします。フィルムは、Agの酸化を避けるためにできるだけ早く堆積した後、ナノ粒子を形成するためにアニールする必要があります。 </li><li>新たに堆積Ag膜を持つセルは230 0.1から0.2まで50分間アニール°Cに予熱した窒素パージオーブンに入れ、その後アンロードされます。ナノ粒子による表面外観の変化に注意してください。 Agナノ粒子の電子顕微鏡画像をスキャンすると、翔です。図WN。 2。 </li><li>ナノ粒子の配列を持つセルの外部量子効率を測定します。 </li></ol> 3。後部反射器の作製後部反射器は、市販の白い天井のペンキ（Dulux）のコートとクラッド〜300 nmの厚さMgF 2の （RI 1.38）誘電体で構成されています。 <ol><li>後部反射器を製造する前にセルの連絡先は、リフトオフプロセスによって誘電体の下から連絡先を公開することができている、それらに黒のマーカーのインクを適用することによって保護する必要があります。 </li><li> NPの配列やほこりを取り除くために描いた連絡先でサンプルを爆破する窒素銃を使用しています。離れてナノ粒子を吹き飛ばすしないように控えめな窒素圧力と運動の注意を払ってください。 MGF 2個で満たされたWボートを含む熱蒸発器にサンプルを置きます。 2〜3E-5 Torrの圧力に蒸発器をポンプダウン。密度3.05およびZ比0.637：MgF 2のためのQCMパラメータを設定します。 </li><li>ことを確認し、サンプルshutterがクローズされ、ボートのヒーターをオンにして徐々にMgF 2をとしてビューポートを通して見溶けるまで過度の圧力上昇を避けるために電流を増加させる。圧力は、0.3 nm / sのMgF 2の堆積速度を対応するセットポイントに電流を設定し、サンプルシャッターを開いた安定した後。 </li><li> QCMを用いて堆積厚さを監視し、300nm以下に達したときにシャッターを閉じます。 </li><li>ヒーターの電源をオフにします。 Wボートは約15分間冷却することができ、サンプルをアンロードします。 MgF 2のクラッドを持つセルの外観の変化に注意してください。 </li><li>セルの連絡先からインクマスクを削除するには、誘電体はアセトンにクラッドを有する細胞を浸す。インク、上記誘電体割れと持ち上げ開始されるまで待ちます。誘電体を使用したすべてのインクが削除され、金属の接点が完全に露出されるまで、アセトン中で細胞を保持します。アセトンからサンプルを削除するには、新鮮なアセトンですすぎ、窒素銃で乾燥させます。 </li><li>の層を適用する全細胞の表面に微細な柔らかいブラシで白い塗料（Duluxワンコート天井のペンキ）は慎重に金属接点を回避することができます。塗料層は、明るい光源で描いたセルを検索するときには光が見えることはできませんので、完全に不透明（〜&gt; 0.5 mm）とするのに十分な厚さにする必要があります。一日乾燥したペイントしましょう​​。 </li><li>白いペンキ後部反射器と電池の外部量子効率を測定します。 </li></ol> 4。代表的な結果太陽電池の短絡電流は、標準的なグローバル太陽スペクトル（空気質量1.5）上の外部量子効率曲線を積分することによって計算されます。ライトトラップに起因するセル電流とその強化の両方がセルの光吸収層の厚さに依存します。自体は電流が厚い細胞に対する高いが、現在の拡張機能は、シンナーのデバイスに対して、外部量子効率は、それぞれのデータとアニメーション5の表1を参照してより高いです曲線を示す。光トラッピング、Hせずに元の厚さ2μmの細胞、aveのJSCは 、ステップ1.7で測定されます。）〜15ミリアンペア/ cm 2の。ナノ粒子アレイの作製した後、JSCは 32％拡張したものです約20ミリアンペア/ cm 2で 、最大増加します。それは後部の拡散反射のみによって25〜30％の向上効果よりも若干優れています。プラズモニックナノ粒子アレイとセルにMgF 2のクラッド層の背面拡散反射を追加した後、JSCは 22.3ミリアンペア/ cm 2で 、または約45％向上にさらに増加します。光トラッピングは薄くデバイスの比較的大きな効果があります。相対的増強は、42％やや低いですが3μmの厚さのセルのすべての電流が高く、最大25.7ミリアンペア/ cm 2であることに注意してください。 <table border="1"><tbody><tr><td> セルの厚さ： </td><td colspan="2"> 2μmの </td><td colspan="2"> 3μmの </td></tr><tr><td></td><td> JSC、ミリアンペア/ cm 2で </td><td><s<html> trong&gt; +％ </td><td> JSC、ミリアンペア/ cm 2で </td><td> +％ </td></tr><tr><td>起源細胞</td><td> 15.4 </td><td></td><td> 18.1 </td><td></td></tr><tr><td>リア拡散反射（R） </td><td> 20.1 </td><td> 30.5 </td><td> 21.5 </td><td> 18.8 </td></tr><tr><td>ナノ粒子（NP） </td><td> 20.3 </td><td> 31.8 </td><td> 21.9 </td><td> 21.0 </td></tr><tr><td> NP / MGF 2 / R </td><td> 22.3 </td><td> 45.3 </td><td> 25.7 </td><td> 42.0 </td></tr></tbody></table> 表1。プラズモニックセルの短絡電流とその拡張は、元のセルと比較されます。 <img alt="図1" src="/files/ftp_upload/4092/4092fig1.jpg" /> 金属化グリッドのポリSi薄膜太陽電池の図1。クローズアップビュー。 / ftp_upload/4092/4092fig2.jpg &quot;/&gt; 図2：シリコン表面上のAgナノ粒子の電子顕微鏡画像をスキャンしています。 <img alt="図3" src="/files/ftp_upload/4092/4092fig3.jpg" /> 図3。プラズモニック結晶シリコン薄膜太陽電池（実寸ではありません）の模式図。 <img alt="図4" src="/files/ftp_upload/4092/4092fig4.jpg" /> 図4拡散反射とプラズモニックナノ粒子と多結晶シリコン薄膜セルの現在の外部量子効率および短絡：点線の黒-ライトトラップせずに元の厚さ2μmのセル、JSC 15.36ミリアンペア/ cm 2で 、青-セル。びまん性塗料の反射鏡と、JSC 20.08ミリアンペア/ cm 2で 、赤-モニックのAgナノ粒子と細胞、JSC 20.31ミリアンペア/ cm 2で 、緑-ナノ粒子と細胞、MgF 2を 、びまん性塗料の反射、JSC </eM&gt; 22.32ミリアンペア/ cm 2である 。紫-ナノ粒子、MGF 2、拡散反射と3μmの厚さのセル（3mm厚ガラスの場合）、Jscは 25.7ミリアンペア/ cm 2の （AR層とエミッタの厚さで意図しない違いによる低青色応答に注意してください）。黒一色-プラズマ化学蒸着（3mm厚ガラスの場合）によって調製し2μmの厚さのテクスチャのセル、Jscは 26.4ミリアンペア/ cm 2とは 、比較のため示した。 アニメーションは、1。 <a href="http://www.jove.com/files/ftp_upload/4092/4092animation1.pptx" target="_blank">アニメーションを表示するには、ここをクリックしてください</a> 。 アニメーションは、2。 <a href="http://www.jove.com/files/ftp_upload/4092/4092animation2.pptx" target="_blank">アニメーションを表示するには、ここをクリックしてください</a> 。 （3）アニメーション <a href="http://www.jove.com/files/ftp_upload/4092/4092animation3.pptx" target="_blank">アニメーションを表示するにはここをクリック</a>。 アニメーション4。 <a href="http://www.jove.com/files/ftp_upload/4092/4092animation4.pptx" target="_blank">アニメーションを表示するには、ここをクリックしてください</a> 。 アニメーション5。 <a href="http://www.jove.com/files/ftp_upload/4092/4092animation5.pptx" target="_blank">アニメーションを表示するには、ここをクリックしてください</a> 。

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利害の衝突が宣言されません。

蒸発した多結晶シリコン太陽電池と光散乱プラズモンナノ粒子は、光トラッピングのための理想的なパートナーです。そのような細胞は平面であり、それゆえ彼らは、テクスチャの表面からの光散乱に頼ることはできません。また、プラズモニックナノ粒子は容易にテクスチャ面上に形成することができる。細胞はまた、最も効果的なプラズモニック光散乱のために最高のナノ粒子の位​​?...

<table border="1"><tbody><tr><td> 試薬の名前 </td><td> 会社 </td><td> カタログ番号 </td><td> コメント </td></tr><tr><td>粒状の銀</td><td> Sigma-Aldrich社</td><td> 303372 </td><td> 99.99パーセント</td></tr><tr><td> MgF 2を 、ランダムな結晶、光学グレード</td><td> Sigma-Aldrich社</td><td> 378836 </td><td> &gt; = 99.99％ </td></tr><tr><td> Duluxワンコートの天井のペンキ</td><td> Dulux </td><td></td><td> R&gt; 90％ （500-1100 nm）の</td></tr></tbody></table>

polycrystalline silicon thin-film solar cells with plasmonic-enhanced light-trapping

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach.
The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles.
To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 &mu;m thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm2, which can be increased up to 17-18 mA/cm2 (~25% higher) after application of a simple diffuse back reflector made of a white paint.
To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23&deg;C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing conditions. An optimised nanoparticle array alone results in cell Jsc enhancement of about 28%, similar to the effect of the diffuse reflector. The photocurrent can be further increased by coating the nanoparticles by a low refractive index dielectric, like MgF2, and applying the diffused reflector. The complete plasmonic cell structure comprises the polycrystalline silicon film, a silver nanoparticle array, a layer of MgF2, and a diffuse reflector. The Jsc for such cell is 21-23 mA/cm2, up to 45% higher than Jsc of the original cell without light-trapping or ~25% higher than Jsc for the cell with the diffuse reflector only.
Introduction
Light-trapping in silicon solar cells is commonly achieved via light scattering at textured interfaces. Scattered light travels through a cell at oblique angles for a longer distance and when such angles exceed the critical angle at the cell interfaces the light is permanently trapped in the cell by total internal reflection (Animation 1: Light-trapping). Although this scheme works well for most solar cells, there are developing technologies where ultra-thin Si layers are produced planar (e.g. layer-transfer technologies and epitaxial c-Si layers) 1 and or when such layers are not compatible with textures substrates (e.g. evaporated silicon) 2. For such originally planar Si layer alternative light trapping approaches, such as diffuse white paint reflector 3, silicon plasma texturing 4 or high refractive index nanoparticle reflector 5 have been suggested.
Metal nanoparticles can effectively scatter incident light into a higher refractive index material, like silicon, due to the surface plasmon resonance effect 6. They also can be easily formed on the planar silicon cell surface thus offering a light-trapping approach alternative to texturing. For a nanoparticle located at the air-silicon interface the scattered light fraction coupled into silicon exceeds 95% and a large faction of that light is scattered at angles above critical providing nearly ideal light-trapping condition (Animation 2: Plasmons on NP). The resonance can be tuned to the wavelength region, which is most important for a particular cell material and design, by varying the nanoparticle average size, surface coverage and local dielectric environment 6,7. Theoretical design principles of plasmonic nanoparticle solar cells have been suggested 8. In practice, Ag nanoparticle array is an ideal light-trapping partner for poly-Si thin-film solar cells because most of these design principle are naturally met. The simplest way of forming nanoparticles by thermal annealing of a thin precursor Ag film results in a random array with a relatively wide size and shape distribution, which is particularly suitable for light-trapping because such an array has a wide resonance peak, covering the wavelength range of 700-900 nm, important for poly-Si solar cell performance. The nanoparticle array can only be located on the rear poly-Si cell surface thus avoiding destructive interference between incident and scattered light which occurs for front-located nanoparticles 9. Moreover, poly-Si thin-film cells do not requires a passivating layer and the flat base-shaped nanoparticles (that naturally result from thermal annealing of a metal film) can be directly placed on silicon further increases plasmonic scattering efficiency due to surface plasmon-polariton resonance 10.
The cell with the plasmonic nanoparticle array as described above can have a photocurrent about 28% higher than the original cell. However, the array still transmits a significant amount of light which escapes through the rear of the cell and does not contribute into the current. This loss can be mitigated by adding a rear reflector to allow catching transmitted light and re-directing it back to the cell. Providing sufficient distance between the reflector and the nanoparticles (a few hundred nanometers) the reflected light will then experience one more plasmonic scattering event while passing through the nanoparticle array on re-entering the cell and the reflector itself can be made diffuse - both effects further facilitating light scattering and hence light-trapping. Importantly, the Ag nanoparticles have to be encapsulated with an inert and low refractive index dielectric, like MgF2 or SiO2, from the rear reflector to avoid mechanical and chemical damage 7. Low refractive index for this cladding layer is required to maintain a high coupling fraction into silicon and larger scattering angles, which are ensured by the high optical contrast between the media on both sides of the nanoparticle, silicon and dielectric 6. The photocurrent of the plasmonic cell with the diffuse rear reflector can be up to 45% higher than the current of the original cell or up to 25% higher than the current of an equivalent cell with the diffuse reflector only.

Watch this Scientific Journal Video about Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping at JoVE.com

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

ガラス基板上に多結晶シリコン薄膜太陽電池は、結晶化、欠陥のパッシベーションおよびメタライゼーションに続いてホウ素やリンをドープしたシリコン層の堆積によって製造されています。プラズモニック光トラッピングは〜45％の光電流の増強の結果、拡散反射板でキャップシリコン細胞表面上のAgナノ粒子を形成することによって導入されています。

プラズモニック·強化されたライトトラップによる多結晶シリコン薄膜太陽電池

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To ...

polycrystalline-silicon-thin-film-solar-cells-with-plasmonic-enhanced

Research

JoVE Journal

Engineering

18.7K ビュー.  University of New South Wales. ガラス基板上に多結晶シリコン薄膜太陽電池は、結晶化、欠陥のパッシベーションおよびメタライゼーションに続いてホウ素やリンをドープしたシリコン層の堆積によって製造されています。プラズモニック光トラッピングは〜45％の光電流の増強の結果、拡散反射板でキャップシリコン細胞表面上のAgナノ粒子を形成することによって導入されています?...

ビデオ: Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

Nanomoulding of Functional Materials, a Versatile Complementary Pattern Replication Method to Nanoimprinting

We describe a nanomoulding technique which allows low-cost nanoscale patterning of functional materials, materials stacks and full devices. Nanomoulding combined with layer transfer enables the replication of arbitrary surface patterns from a master structure onto the functional material. Nanomoulding can be performed on any nanoimprinting setup and can be applied to a wide range of materials and deposition processes. In particular we demonstrate the fabrication of patterned transparent zinc oxide electrodes for light trapping applications in solar cells.

We describe a nanomoulding technique which allows low-cost nanoscale patterning of functional materials, materials stacks and full devices. Nanomoulding can be performed on any nanoimprinting setup and can be applied to a wide range of materials and deposition processes.

機能材料のNanomoulding、ナノインプリントへ多目的相補パターンレプリケーション方法

We describe a nanomoulding technique which  allows low-cost nanoscale patterning of functional materials, materials stacks  and full devices. Nanomoulding ...

工学

Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application

In this study, zinc oxide (ZnO) thin films with high c-axis (0002) preferential orientation have been successfully and effectively synthesized onto silicon (Si) substrates via different synthesized temperatures by using plasma enhanced chemical vapor deposition (PECVD) system. The effects of different synthesized temperatures on the crystal structure, surface morphologies and optical properties have been investigated. The X-ray diffraction (XRD) patterns indicated that the intensity of (0002) diffraction peak became stronger with increasing synthesized temperature until 400 oC. The diffraction intensity of (0002) peak gradually became weaker accompanying with appearance of (10-10) diffraction peak as the synthesized temperature up to excess of 400 oC. The RT photoluminescence (PL) spectra exhibited a strong near-band-edge (NBE) emission observed at around 375 nm and a negligible deep-level (DL) emission located at around 575 nm under high c-axis ZnO thin films. Field emission scanning electron microscopy (FE-SEM) images revealed the homogeneous surface and with small grain size distribution. The ZnO thin films have also been synthesized onto glass substrates under the same parameters for measuring the transmittance.
For the purpose of ultraviolet (UV) photodetector application, the interdigitated platinum (Pt) thin film (thickness ~100 nm) fabricated via conventional optical lithography process and radio frequency (RF) magnetron sputtering. In order to reach Ohmic contact, the device was annealed in argon circumstances at 450 oC by rapid thermal annealing (RTA) system for 10 min. After the systematic measurements, the current-voltage (I-V) curve of photo and dark current and time-dependent photocurrent response results exhibited a good responsivity and reliability, indicating that the high c-axis ZnO thin film is a suitable sensing layer for UV photodetector application.

We offered a method to directly synthesize high c-axis (0002) ZnO thin film by plasma enhanced chemical vapor deposition. The as-synthesized ZnO thin film combined with Pt interdigitated electrode was used as sensing layer for ultraviolet photodetector, showing a high performance through a combination of its good responsivity and reliability.

プラズマによる高c軸ZnO薄膜の合成とキャラクタリゼーションは、化学気相堆積システムとそのUV光検出器アプリケーションを強化しました

In this study, zinc oxide (ZnO) thin films with high c-axis (0002) preferential orientation have been successfully and effectively synthesized onto ...

Integration of Light Trapping Silver Nanostructures in Hydrogenated Microcrystalline Silicon Solar Cells by Transfer Printing

One of the potential applications of metal nanostructures is light trapping in solar cells, where unique optical properties of nanosized metals, commonly known as plasmonic effects, play an important role. Research in this field has, however, been impeded owing to the difficulty of fabricating devices containing the desired functional metal nanostructures. In order to provide a viable strategy to this issue, we herein show a transfer printing-based approach that allows the quick and low-cost integration of designed metal nanostructures with a variety of device architectures, including solar cells. Nanopillar poly(dimethylsiloxane) (PDMS) stamps were fabricated from a commercially available nanohole plastic film as a master mold. On this nanopatterned PDMS stamps, Ag films were deposited, which were then transfer-printed onto block copolymer (binding layer)-coated hydrogenated microcrystalline Si (&#181;c-Si:H) surface to afford ordered Ag nanodisk structures. It was confirmed that the resulting Ag nanodisk-incorporated &#181;c-Si:H solar cells show higher performances compared to a cell without the transfer-printed Ag nanodisks, thanks to plasmonic light trapping effect derived from the Ag nanodisks. Because of the simplicity and versatility, further device application would also be feasible thorough this approach.

A viable transfer printing-based methodology to introduce plasmonic metal nanostructures in solar cells is described. Using nanopillar poly(dimethylsiloxane) stamps, an Ag-based ordered nanodisk array was integrated with standard hydrogenated microcrystalline Si solar cells, which led to improved device performances due to plasmonic light trapping.

転写印刷により水素化微結晶シリコン太陽電池の光トラッピング銀ナノ構造の統合

One of the potential applications of metal nanostructures is light trapping in solar cells, where unique optical properties of nanosized metals, commonly ...

Iridium Oxide-reduced Graphene Oxide Nanohybrid Thin Film Modified Screen-printed Electrodes as Disposable Electrochemical Paper Microfluidic pH Sensors

A facile, controllable, inexpensive and green electrochemical synthesis of IrO2-graphene nanohybrid thin films is developed to fabricate an easy-to-use integrated paper microfluidic electrochemical pH sensor for resource-limited settings. Taking advantages from both pH meters and strips, the pH sensing platform is composed of hydrophobic barrier-patterned paper micropad (&#181;PAD) using polydimethylsiloxane (PDMS), screen-printed electrode (SPE) modified with IrO2-graphene films and molded acrylonitrile butadiene styrene (ABS) plastic holder. Repetitive cathodic potential cycling was employed for graphene oxide (GO) reduction which can completely remove electrochemically unstable oxygenated groups and generate a 2D defect-free homogeneous graphene thin film with excellent stability and electronic properties. A uniform and smooth IrO2 film in nanoscale grain size is anodically electrodeposited onto the graphene film, without any observable cracks. The resulting IrO2-RGO electrode showed slightly super-Nernstian responses from pH 2-12 in Britton-Robinson (B-R) buffers with good linearity, small hysteresis, low response time and reproducibility in different buffers, as well as low sensitivities to different interfering ionic species and dissolved oxygen. A simple portable digital pH meter is fabricated, whose signal is measured with a multimeter, using high input-impedance operational amplifier and consumer batteries. The pH values measured with the portable electrochemical paper-microfluidic pH sensors were consistent with those measured using a commercial laboratory pH meter with a glass electrode.

The study demonstrates the growth of iridium oxide-reduced graphene oxide (IrO2-RGO) nanohybrid thin films on irregular and rough screen-printed carbon substrate through a green electrochemical synthesis, and their implementation as a pH sensor with a patterned paper-fluidic platform.

使い捨て電気化学紙のマイクロ流体のpHセンサーとしてイリジウム酸化還元グラフェン酸化物ナノハイブリッド薄膜変更されたスクリーン印刷電極

A facile, controllable, inexpensive and green electrochemical synthesis of IrO2-graphene nanohybrid thin films is developed to fabricate an easy-to-use ...

Digital Printing of Titanium Dioxide for Dye Sensitized Solar Cells

Silicon solar cell manufacturing is an expensive and high energy consuming process. In contrast, dye sensitized solar cell production is less environmentally damaging with lower processing temperatures presenting a viable and low cost alternative to conventional production. This paper further enhances these environmental credentials by evaluating the digital printing and therefore additive production route for these cells. This is achieved here by investigating the formation and performance of a metal oxide photoelectrode using nanoparticle sized titanium dioxide. An ink-jettable material was formulated, characterized and printed with a piezoelectric inkjet head to produce a 2.6 &#181;m thick layer. The resultant printed layer was fabricated into a functioning cell with an active area of 0.25 cm2 and a power conversion efficiency of 3.5%. The binder-free formulation resulted in a reduced processing temperature of 250 &#176;C, compatible with flexible polyamide substrates which are stable up to temperatures of 350 &#730;C. The authors are continuing to develop this process route by investigating inkjet printing of other layers within dye sensitized solar cells.

This paper investigates the suitability of inkjet printing for the manufacturing of dye-sensitized solar cells. A binder-free TiO2 nanoparticle ink was formulated and printed onto a FTO glass substrate. The printed layer was fabricated into a cell with an active area of 0.25 cm2 and an efficiency of 3.5%.

色素増感太陽電池用二酸化チタンのデジタル印刷

Silicon solar cell manufacturing is an expensive and high energy consuming process. In contrast, dye sensitized solar cell production is less ...

Recombination Dynamics in Thin-film Photovoltaic Materials via Time-resolved Microwave Conductivity

A method for investigating recombination dynamics of photo-induced charge carriers in thin film semiconductors, specifically in photovoltaic materials such as organo-lead halide perovskites is presented. The perovskite film thickness and absorption coefficient are initially characterized by profilometry and UV-VIS absorption spectroscopy. Calibration of both laser power and cavity sensitivity is described in detail. A protocol for performing Flash-photolysis Time Resolved Microwave Conductivity (TRMC) experiments, a non-contact method of determining the conductivity of a material, is presented. A process for identifying the real and imaginary components of the complex conductivity by performing TRMC as a function of microwave frequency is given. Charge carrier dynamics are determined under different excitation regimes (including both power and wavelength). Techniques for distinguishing between direct and trap-mediated decay processes are presented and discussed. Results are modelled and interpreted with reference to a general kinetic model of photoinduced charge carriers in a semiconductor. The techniques described are applicable to a wide range of optoelectronic materials, including organic and inorganic photovoltaic materials, nanoparticles, and conducting/semiconducting thin films.

A Time Resolved Microwave Conductivity technique for investigating direct and trap-mediated recombination dynamics and determining carrier mobilities of thin film semiconductors is presented here.

時間分解マイクロ波伝導を介して、薄膜太陽電池材料での再結合ダイナミクス

A method for investigating recombination dynamics of photo-induced charge carriers in thin film semiconductors, specifically in photovoltaic materials ...

Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells

Here, we demonstrate the incorporation of monovalent cation additives into CH3NH3PbI3 perovskite in order to adjust the optical, excitonic, and electrical properties. The possibility of doping was investigated by adding monovalent cation halides with similar ionic radii to Pb2+, including Cu+, Na+, and Ag+. A shift in the Fermi level and a remarkable decrease of sub-bandgap optical absorption, along with a lower energetic disorder in the perovskite, was achieved. An order-of-magnitude enhancement in the bulk hole mobility and a significant reduction of transport activation energy within an additive-based perovskite device was attained. The confluence of the aforementioned improved properties in the presence of these cations led to an enhancement in the photovoltaic parameters of the perovskite solar cell. An increase of 70 mV in open circuit voltage for AgI and a 2 mA/cm2 improvement in photocurrent density for NaI- and CuBr-based solar cells were achieved compared to the pristine device. Our work paves the way for further improvements in the optoelectronic quality of CH3NH3PbI3 perovskite and subsequent devices. It highlights a new avenue for investigations on the role of dopant impurities in crystallization and controls the electronic defect density in perovskite structures.

Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells

Here, we present a protocol to adjust the properties of solution-processed CH3NH3PbI3 through the incorporation of monovalent cation additives in order to achieve highly efficient perovskite solar cells.

CHの一価の陽イオンドーピング<sub&gt; 3</sub&gt; NH<sub&gt; 3</sub&gt; PBI<sub&gt; 3</sub&gt;効率的なペロブスカイト太陽電池用

Here, we demonstrate the incorporation of monovalent cation additives into CH3NH3PbI3 perovskite in order to adjust the optical, excitonic, and electrical ...

Electrospinning of Photocatalytic Electrodes for Dye-sensitized Solar Cells

This work demonstrates a protocol to fabricate a fiber-based photoanode for dye-sensitized solar cells, consisting of a light-scattering layer made of electrospun titanium dioxide nanofibers (TiO2-NFs) on top of a blocking layer made of commercially available titanium dioxide nanoparticles (TiO2-NPs). This is achieved by first electrospinning a solution of titanium (IV) butoxide, polyvinylpyrrolidone (PVP), and glacial acetic acid in ethanol to obtain composite PVP/TiO2 nanofibers. These are then calcined at 500 &#176;C to remove the PVP and to obtain pure anatase-phase titania nanofibers. This material is characterized using scanning electron microscopy (SEM) and powder X-ray diffraction (XRD). The photoanode is prepared by first creating a blocking layer through the deposition of a TiO2-NPs/terpineol slurry on a fluorine-doped tin oxide (FTO) glass slide using doctor blading techniques. A subsequent thermal treatment is performed at 500 &#176;C. Then, the light-scattering layer is formed by depositing a TiO2-NFs/terpineol slurry on the same slide, using the same technique, and calcinating again at 500 &#176;C. The performance of the photoanode is tested by fabricating a dye-sensitized solar cell and measuring its efficiency through J-V curves under a range of incident light densities, from 0.25-1 Sun.

The overall goal of this project was to use electrospinning to fabricate a photoanode with improved performance for dye-sensitized solar cells.

色素増感太陽電池用光触媒電極のエレクトロスピニング

This work demonstrates a protocol to fabricate a fiber-based photoanode for dye-sensitized solar cells, consisting of a light-scattering layer made of ...

In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for Cu(In,Ga)Se2 Solar Cells

The levelized cost of electricity (LCOE) of photovoltaic (PV) systems is determined by, among other factors, the PV module reliability. Better prediction of degradation mechanisms and prevention of module field failure can consequently decrease investment risks as well as increase the electricity yield. An improved knowledge level can for these reasons significantly decrease the total costs of PV electricity. 
In order to better understand and minimize the degradation of PV modules, the occurring degradation mechanisms and conditions should be identified. This should preferably happen under combined stresses, since modules in the field are also simultaneously exposed to multiple stress factors. Therefore, two 'Combined Stress test with in situ measurement' setups have been designed and constructed. These setups allow the simultaneous use of humidity, temperature, illumination, and electrical biases as independently controlled stress factors on solar cells and minimodules. The setups also allow real-time monitoring of the electrical properties of these samples. This protocol presents these setups and describes the experimental possibilities. Moreover, results obtained with these setups are also presented: various examples about the influence of both deposition and degradation conditions on the stability of thin film Cu(In,Ga)Se2 (CIGS) as well as Cu2ZnSnSe4 (CZTS) solar cells are described. Results on the temperature dependency of CIGS solar cells are also presented.

In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for CuIn,GaSe2 Solar Cells

Two &#39;Combined Stress test with in situ measurement&#39; setups, which allow real-time monitoring of accelerated degradation of solar cells and modules, were designed and constructed. These setups allow the simultaneous use of humidity, temperature, electrical biases, and illumination as independently controlled stress factors. The setups and various experiments executed are presented.

その場で太陽電池とモジュールの加速劣化のモニタリング: Cu (In, Ga) Se2太陽電池に関するケーススタディ

The levelized cost of electricity (LCOE) of photovoltaic (PV) systems is determined by, among other factors, the PV module reliability. Better prediction ...

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Here, we present a procedure for the synthesis of bulk and thin film multicomponent (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O (Co variant) and (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)CuxZn0.25(1-x))O (Cu variant) entropy-stabilized oxides. Phase pure and chemically homogeneous (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O (x = 0.20, 0.27, 0.33) and (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)CuxZn0.25(1-x))O (x = 0.11, 0.27) ceramic pellets are synthesized and used in the deposition of ultra-high quality, phase pure, single crystalline thin films of the target stoichiometry. A detailed methodology for the deposition of smooth, chemically homogeneous, entropy-stabilized oxide thin films by pulsed laser deposition on (001)-oriented MgO substrates is described. The phase and crystallinity of bulk and thin film materials are confirmed using X-ray diffraction. Composition and chemical homogeneity are confirmed by X-ray photoelectron spectroscopy and energy dispersive X-ray spectroscopy. The surface topography of thin films is measured with scanning probe microscopy. The synthesis of high quality, single crystalline, entropy-stabilized oxide thin films enables the study of interface, size, strain, and disorder effects on the properties in this new class of highly disordered oxide materials.

The synthesis of high quality bulk and thin film (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O and (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)CuxZn0.25(1-x))O entropy-stabilized oxides is presented.

バルクと組成バリエーション エントロピー安定化酸化物薄膜合成

Here, we present a procedure for the synthesis of bulk and thin film multicomponent (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O (Co variant) and ...