This program has been supported by the Australian Government through the Australian Renewable Energy Agency (ARENA). Responsibility for the views, information or advice expressed herein is not accepted by the Australian Government.

<ol>
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C., Gmitter, T., Bright, T. B. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Unusually+low+surface+recombination+velocity+on+silicon+and+germanium+surfaces.">Unusually low surface recombination velocity on silicon and germanium surfaces.</a> Phys. Rev. Lett. 57 (2), 249-252 (1986).</li><li>Grant, N. E., McIntosh, K. R., Tan, J. T. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Evaluation+of+the+bulk+lifetime+of+silicon+wafers+by+immersion+in+hydrofluoric+acid+and+illumination.">Evaluation of the bulk lifetime of silicon wafers by immersion in hydrofluoric acid and illumination.</a> J. Solid State Sci. Technol. 1 (2), P55-P61 (2012).</li><li>Grant, N. E., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Light+enhanced+hydrofluoric+acid+passivation+for+evaluating+silicon+bulk+lifetimes.">Light enhanced hydrofluoric acid passivation for evaluating silicon bulk lifetimes.</a> 28.th. European Photovoltaic Solar Energy Conference. , 883-887 (2013).</li><li>Grant, N. E. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=.">.</a> Surface passivation and characterization of crystalline silicon by wet chemical treatments. , (2012).</li><li>Kern, W. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=The+evolution+of+silicon+wafer+cleaning+technology.">The evolution of silicon wafer cleaning technology.</a> J. Electrochem. Soc. 137 (6), 1887-1892 (1990).</li><li>Angermann, H., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Wet-chemical+passivation+of+atomically+flat+and+structured+silicon+substrates+for+solar+cell+application.">Wet-chemical passivation of atomically flat and structured silicon substrates for solar cell application.</a> App. Surf. Sci. 254 (12), 3615-3625 (2008).</li><li>Angermann, H., Henrion, W., Rseler, A., Rebien, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Wet-chemical+passivation+of+Si(111)-+and+Si(100)-substrates.">Wet-chemical passivation of Si(111)- and Si(100)-substrates.</a> Mat. Sci. Eng. 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The authors have nothing to disclose.

上述のバルクシリコン寿命測定技術の実装を成功は、3つの重要なステップ、（I）、化学的に1分17は15％のHF溶液および（iii）照明における（ii）の浸漬、洗浄、シリコンウエハのエッチングに基づいています、 18,19。これらのステップがなければ、バルク寿命はどの確実に測定することはできません。 測定技術は、室温で実施されるように、表面パッシ?...

高寿命（&gt; 1ミリ秒）単結晶シリコンは、高効率の太陽電池のため、これまで以上に重要になってきています。埋め込まれた不純物の再結合特性を理解することであって、重要な話題のままです。グローンイン欠陥の再結合活性を調べるために最も広く用いられる技術の一つは、光伝導方法1によるものです。この技術により、それは、このように、それが困難な成長の欠陥の再結合特性を検査すること、バルク再結合から完全に独立した表面にはしばしば困難です。幸い&lt;5 cmで/秒の非常に低い効果的な表面再結合速度を達成することができるいくつかの誘電体膜（S effは ）存在し、効果的に表面再結合を阻害します。 2、酸化アルミニウム（Al 2 O 3）3、アモルファスシリコン（-Si：H）4：これらは、窒化珪素（HしたSiN を x）です。堆積とANこれらの誘電体膜のnealing温度（〜400℃）永久グローンイン欠陥の再結合活性を不活性化しないよう十分に低いと考えられています。これの例としては、鉄-ホウ素5ホウ素6酸素欠陥です。しかし、最近では 、n -型チョクラルスキー（CZ）シリコンにおける空孔および酸素空孔リン欠陥が完全に250-350°C 7,8の温度で失活されることがわかりました。同様にフロートゾーン（FZ） のp型シリコンの欠陥は、〜250℃で9で無効化することがわかりました。したがって、このようなプラズマ強化化学蒸着（PECVD）、原子層堆積（ALD）などの従来の不動態化技術は、成長中のバルクの欠陥を検査するために、表面再結合を抑制するために適切ではないかもしれません。さらに、SiNをX：Hとa-Si：H膜は、水素化10,11を介してバルクシリコンの欠陥を不活性化することが示されています。したがって組換え活性のOを調べるために、<html> Fグローイン欠陥、RT表面パッシベーション技術は理想的であろう。湿式化学表面パッシベーションは、この要件を満たします。 1990年代にHoranyi らは、S effは &lt;10 cmで/秒12を達成し 、ヨウ素エタノール中のシリコンウェーハの浸漬（IE）の溶液をシリコンウェーハを不動態化するための手段を提供することを実証しました。 2007年マイヤーらは2009年にChhabra ら 5cmのS effの /秒のシリコンウェーハを浸漬することによって達成することができることを実証しながらヨウ素メタノール（IM）ソリューションは、7 cmで/秒13に表面再結合を低減することができることを示しましたキンヒドロン-メタノール（QM）ソリューション14,15インチIE、IMと品質管理ソリューションによって達成優れた表面保護にもかかわらず、彼らは、高純度のシリコンウェーハのバルク寿命を測定するための適切な表面パッシベーション（S effは &lt;5センチメートル/秒）を提供していません。 &quot;&gt;表面パッシベーションの高いレベルを達成するための別の手段は、HF酸中にシリコンウェーハを浸漬することによってである。シリコンウェハを不動態化するためにHFを使用するという概念は、最初Yablonavitch らによって導入されたヌクレオチド。の記録低いS effの を示した 1986年に0.25±0.5センチメートル/秒16。優れた表面パッシベーションは、高抵抗率のウェーハ上に達成されたが、我々はこのように寿命測定に大きな不確実性を追加して、技術は非反復であることが判明している。したがって、一貫非常に達成することにより不確実性を制限します低いS effは （約1 cmで/秒）は、3つの重要なステップを組み込んだ新しいHFの保護技術、（I）、化学的に洗浄し、シリコンウエハのエッチング、15％のHF溶液中に（ii）の浸漬及び（iii）を開発しました照明は、1分17,18のために、この手順は、上記の従来のPECVD及びALD堆積法と比較して簡単かつ効率的な時間の両方です。

<table><tbody><tr><td>Hydrofluoric acid (48%)</td><td>Merck Millipore,&amp;nbsp; &amp;nbsp;http://www.merckmillipore.com/AU/en/product/Hydrofluoric-acid-48%25,MDA_CHEM-100334</td><td>1003340500</td><td>Harmful and toxic. Any supplier could be used provided the chemical is Analytical Reagent (AR) grade.</td></tr><tr><td>Hydrochloric acid 32%, AR</td><td>ACI Labscan, http://www.rcilabscan.com/modules/productview.php?product_id=1985</td><td>107209</td><td>Harmful and toxic. Any supplier could be used provided the chemical is Analytical Reagent (AR) grade.</td></tr><tr><td>Ammonia (30%) Solution AR</td><td>Chem-supply, https://www.chemsupply.com.au/aa005-500m</td><td>AA005</td><td>Harmful and toxic. Any supplier could be used provided the chemical is Analytical Reagent (AR) grade.</td></tr><tr><td>Hydrogen Peroxide (30%)</td><td>Merck Millipore, http://www.merckmillipore.com/AU/en/product/Hydrogen-peroxide-30%25,MDA_CHEM-107209</td><td>1072092500</td><td>Harmful and toxic. Any supplier could be used provided the chemical is Analytical Reagent (AR) grade.</td></tr><tr><td>Tetramethylammonium hydroxide (25% in H&lt;sub&gt;2&lt;/sub&gt;O)</td><td>J.T Baker, https://us.vwr.com/store/catalog/product.jsp?product_id=4562992</td><td>5879-03</td><td>Harmful and toxic. Any supplier could be used provided the chemical is Analytical Reagent (AR) grade.</td></tr><tr><td>640 ml round plastic container</td><td>Sistema, http://sistemaplastics.com/products/klip-it-round/640ml-round</td><td></td><td>This is a good container for storing the 15% HF solution in.</td></tr><tr><td>WCT-120 lifetime tester</td><td>Sinton Instruments, http://www.sintoninstruments.com/Sinton-Instruments-WCT-120.html</td><td></td><td></td></tr><tr><td>Dell workstation with Microsoft Office Pro, Data acquisition card and software including Sinton Software under existing license.</td><td>Sinton Instruments, http://www.sintoninstruments.com</td><td></td><td></td></tr><tr><td>Halogen optical lamp, ELH 300 W, 120 V</td><td>OSRAM Sylvania, http://www.sylvania.com/en-us/products/halogen/Pages/default.aspx</td><td>54776</td><td>Any equivalent lamp could be used.</td></tr><tr><td>Voltage power source</td><td>Home made power supply</td><td></td><td>Any power supply could be used provided it can produce up to 90 Volts and 1-5 Amps.</td></tr><tr><td>Conductivity meter</td><td>WTW, http://www.wtw.de/uploads/media/US_L_07_Cond_038_049_I_02.pdf</td><td>LF330</td><td></td></tr></tbody></table>

light enhanced hydrofluoric acid passivation: a sensitive technique for detecting bulk silicon defects

手順が提示されているフッ酸（HF）にウェーハを浸漬する際に、一時的に表面パッシベーションの非常に高いレベルを達成することにより、シリコンウエハのバルク寿命（&gt; 100マイクロ秒）を測定しました。この手順により、3つの重要なステップは、バルク寿命を達成するために必要とされます。まず、HFにシリコンウェーハを浸漬する前に、それらを化学的に洗浄され、その後、25％の水酸化テトラメチルアンモニウムでエッチングされます。第二に、化学的に処理されたウェハは、次いでHFと塩酸の混合物を充填した大きなプラスチック容器に入れられ、その後、光伝導（PC）の測定のために誘導コイルを上にセンタリング。表面再結合を抑制し、バルク寿命を測定するために、ウェハはハロゲンランプを用いて1分間、0.2太陽に照らされている第三に、照明がオフにされ、そしてPCの測定が直ちに行われます。この手順により、バルクシリコンの欠陥の特性を正確に決定することができます。毛皮thermore、それは、その濃度が（&lt;10 12 cm -3程度）低い場合に敏感なRT表面パッシベーション技術は、バルクシリコンの欠陥を検査するために不可欠であることが予想されます。

図1aに概略を示し 、図1bは、実験の写真を示します。シリコンウェーハをHF水溶液に浸漬されると、その後寿命試験機台上に置き、測定は（照明の前に）実行され、表面再結合によって制限される寿命曲線は、 図2の青い三角で示すようになります。 図2の赤色の丸で示すようしかし、 図1に示すように、（HFに浸漬し...

Watch this Scientific Journal Video about Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects at JoVE.com

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

ライト強化フッ酸不動態化：バルクシリコン欠陥を検出するための高感度テクニック

バルクシリコンの欠陥の再結合活性を調べるRT液体表面パッシベーション技術が記載されています。 1分間15％のフッ酸と、（iii）照明（I）において、化学洗浄及びシリコンのエッチング、シリコンの（ii）の浸漬：技術を成功させるには、3つの重要な手順が必要です。

A procedure to measure the bulk lifetime (&#62;100 &#181;sec) of silicon wafers by temporarily attaining a very high level of surface passivation when ...

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9.2K ビュー.  Australian National University. バルクシリコンの欠陥の再結合活性を調べるRT液体表面パッシベーション技術が記載されています。 1分間15％のフッ酸と、（iii）照明（I）において、化学洗浄及びシリコンのエッチング、シリコンの（ii）の浸漬：技術を成功させるには、3つの重要な手順が必要です。 

ビデオ: Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities

Slow light has been one of the hot topics in the photonics community in the past decade, generating great interest both from a fundamental point of view and for its considerable potential for practical applications. Slow light photonic crystal waveguides, in particular, have played a major part and have been successfully employed for delaying optical signals1-4 and the enhancement of both linear5-7 and nonlinear devices.8-11
Photonic crystal cavities achieve similar effects to that of slow light waveguides, but over a reduced band-width. These cavities offer high Q-factor/volume ratio, for the realization of optically12 and electrically13 pumped ultra-low threshold lasers and the enhancement of nonlinear effects.14-16 Furthermore, passive filters17 and modulators18-19 have been demonstrated, exhibiting ultra-narrow line-width, high free-spectral range and record values of low energy consumption.
To attain these exciting results, a robust repeatable fabrication protocol must be developed. In this paper we take an in-depth look at our fabrication protocol which employs electron-beam lithography for the definition of photonic crystal patterns and uses wet and dry etching techniques. Our optimised fabrication recipe results in photonic crystals that do not suffer from vertical asymmetry and exhibit very good edge-wall roughness. We discuss the results of varying the etching parameters and the detrimental effects that they can have on a device, leading to a diagnostic route that can be taken to identify and eliminate similar issues.
The key to evaluating slow light waveguides is the passive characterization of transmission and group index spectra. Various methods have been reported, most notably resolving the Fabry-Perot fringes of the transmission spectrum20-21 and interferometric techniques.22-25 Here, we describe a direct, broadband measurement technique combining spectral interferometry with Fourier transform analysis.26 Our method stands out for its simplicity and power, as we can characterise a bare photonic crystal with access waveguides, without need for on-chip interference components, and the setup only consists of a Mach-Zehnder interferometer, with no need for moving parts and delay scans.
When characterising photonic crystal cavities, techniques involving internal sources21 or external waveguides directly coupled to the cavity27 impact on the performance of the cavity itself, thereby distorting the measurement. Here, we describe a novel and non-intrusive technique that makes use of a cross-polarised probe beam and is known as resonant scattering (RS), where the probe is coupled out-of plane into the cavity through an objective. The technique was first demonstrated by McCutcheon et al.28 and further developed by Galli et al.29

Use of photonic crystal slow light waveguides and cavities has been widely adopted by the photonics community in many differing applications. Therefore fabrication and characterization of these devices are of great interest. This paper outlines our fabrication technique and two optical characterization methods, namely: interferometric (waveguides) and resonant scattering (cavities).

フォトニック結晶スローライト導波路とキャビティの作製と評価

Slow light has been one of the hot topics in the photonics community in the past decade, generating great interest both from a fundamental point of view ...

工学

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures1. MLCD results in the formation of highly controlled, ultra shallow and sharp doping profiles at the nanometer scale. In MLCD process the dopant source is a monolayer containing dopant atoms.
In this article a detailed procedure for surface doping of silicon substrate as well as silicon nanowires is demonstrated. Phosphorus dopant source was formed using tetraethyl methylenediphosphonate monolayer on a silicon substrate. This monolayer containing substrate was brought to contact with a pristine intrinsic silicon target substrate and annealed while in contact. Sheet resistance of the target substrate was measured using 4 point probe. Intrinsic silicon nanowires were synthesized by chemical vapor deposition (CVD) process using a vapor-liquid-solid (VLS) mechanism; gold nanoparticles were used as catalyst for nanowire growth. The nanowires were suspended in ethanol by mild sonication. This suspension was used to dropcast the nanowires on silicon substrate with a silicon nitride dielectric top layer. These nanowires were doped with phosphorus in similar manner as used for the intrinsic silicon wafer. Standard photolithography process was used to fabricate metal electrodes for the formation of nanowire based field effect transistor (NW-FET). The electrical properties of a representative nanowire device were measured by a semiconductor device analyzer and a probe station.

A detailed procedure for surface doping of Silicon interfaces is provided. The ultra-shallow surface doping is demonstrated by using phosphorus containing monolayers and rapid annealing process. The method can be used for doping of macroscopic area surfaces as well as nanostructures.

Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures1. MLCD results in the formation of highly controlled, ultra ...

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

The wettability of silicon (Si) is one of the important parameters in the technology of surface functionalization of this material and fabrication of biosensing devices. We report on a protocol of using KrF and ArF lasers irradiating Si (001) samples immersed in a liquid environment with low number of pulses and operating at moderately low pulse fluences to induce Si wettability modification. Wafers immersed for up to 4 hr in a 0.01% H2O2/H2O solution did not show measurable change in their initial contact angle (CA) ~75&#176;. However, the 500-pulse KrF and ArF lasers irradiation of such wafers in a microchamber filled with 0.01% H2O2/H2O solution at 250 and 65 mJ/cm2, respectively, has decreased the CA to near 15&#176;, indicating the formation of a superhydrophilic surface. The formation of OH-terminated Si (001), with no measurable change of the wafer&#8217;s surface morphology, has been confirmed by X-ray photoelectron spectroscopy and atomic force microscopy measurements. The selective area irradiated samples were then immersed in a biotin-conjugated fluorescein-stained nanospheres solution for 2 hr, resulting in a successful immobilization of the nanospheres in the non-irradiated area. This illustrates the potential of&#160;the method for selective area biofunctionalization and fabrication of advanced Si-based biosensing architectures. We also describe a similar protocol of irradiation of wafers immersed in methanol (CH3OH) using ArF laser operating at pulse fluence of 65 mJ/cm2 and in situ formation of a strongly hydrophobic surface of Si (001) with the CA of 103&#176;. The XPS results indicate ArF laser induced formation of Si&#8211;(OCH3)x compounds responsible for the observed hydrophobicity. However, no such compounds were found by XPS on the Si surface irradiated by KrF laser in methanol, demonstrating the inability of the KrF laser to photodissociate methanol and create -OCH3 radicals.

We report on a process of in situ alteration of HF treated Si (001) surface into a hydrophilic or hydrophobic state by irradiating samples in microfluidic chambers filled with&#160;H2O2/H2O solution (0.01%-0.5%) or methanol solutions using pulsed UV laser of a relative low pulse fluence.

液体環境におけるパルスUVレーザー照射によるシリコン表面の濡れ性の選択エリア変更

The wettability of silicon (Si) is one of the important parameters in the technology of surface functionalization of this material and fabrication of ...

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications of semiconductor materials. However, it is still under debate how the defect structure determines the band structure, and therefore, the recombination behavior of electron-hole pairs responsible for the optical and electrical properties of the extended defects. The present paper is a survey of procedures for the spatially resolved investigation of structural and of physical properties of extended defects in semiconductor materials with a scanning electron microscope (SEM). Representative examples are given for crystalline silicon. The luminescence behavior of extended defects can be investigated by cathodoluminescence (CL) measurements. They are particularly valuable because spectrally and spatially resolved information can be obtained simultaneously. For silicon, with an indirect electronic band structure, CL measurements should be carried out at low temperatures down to 5 K due to the low fraction of radiative recombination processes in comparison to non-radiative transitions at room temperature. For the study of the electrical properties of extended defects, the electron beam induced current (EBIC) technique can be applied. The EBIC image reflects the local distribution of defects due to the increased charge-carrier recombination in their vicinity. The procedure for EBIC investigations is described for measurements at room temperature and at low temperatures. Internal strain fields arising from extended defects can be determined quantitatively by cross-correlation electron backscatter diffraction (ccEBSD). This method is challenging because of the necessary preparation of the sample surface and because of the quality of the diffraction patterns which are recorded during the mapping of the sample. The spatial resolution of the three experimental techniques is compared.

The optical, electrical, and structural properties of dislocations and of grain boundaries in semiconductor materials can be determined by experiments performed in a scanning electron microscope. Electron microscopy has been used to investigate cathodoluminescence, electron beam induced current, and diffraction of backscattered electrons.

走査型電子顕微鏡による半導体材料における拡張欠陥の総合的な特性評価

Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications ...

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Electrically assisted deformation (EAD) is increasingly being used to improve the formability of metals during processes such as sheet metal rolling and forging. Adoption of this technique is proceeding despite disagreement concerning the underlying mechanism responsible for EAD. The experimental procedure described herein enables a more explicit study compared to previous EAD research by removing thermal effects, which are responsible for disagreement in interpreting previous EAD results. Furthermore, as the procedure described here enables EAD observation in situ and in real time in a transmission electron microscope (TEM), it is superior to existing post-mortem methods that observe EAD effects post-test. Test samples consist of a single crystal copper (SCC) foil having a free-standing tensile test section of nanoscale thickness, fabricated using a combination of laser and ion beam milling. The SCC is mounted to an etched silicon base that provides mechanical support and electrical isolation while serving as a heat sink. Using this geometry, even at high current density (~3,500 A/mm2), the test section experiences a negligible temperature increase (&#60;0.02 &#176;C), thus eliminating Joule heating effects. Monitoring material deformation and identifying the corresponding changes to microstructures, e.g. dislocations, are accomplished by acquiring and analyzing a series of TEM images. Our sample preparation and in situ experiment procedures are robust and versatile as they can be readily utilized to test materials with different microstructures, e.g., single and polycrystalline copper.

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Isolating electrical and thermal effects on electrically assisted deformation (EAD) is very difficult using macroscopic samples. Metallic sample micro- and nanostructures together with a custom test procedure have been developed to evaluate the impact of applied current on the formation without joule heating and evolution of dislocations on these samples.

のための新しい方法<em&gt;現場で</em&gt;ナノスケール試料の電気機械的特性

Electrically assisted deformation (EAD) is increasingly being used to improve the formability of metals during processes such as sheet metal rolling and ...

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Flexible photodetectors have been intensely studied for the use of curved image sensors, which are a crucial component in bio-inspired imaging systems, but several challenging points remain, such as a low absorption efficiency due to a thin active layer and low flexibility. We present an advanced method to fabricate a flexible phototransistor array with an improved electrical performance. The outstanding electrical performance is driven by a low dark current owing to deep impurity doping. Stretchable and flexible metal interconnectors simultaneously offer electrical and mechanical stabilities in a highly deformed state. The protocol explicitly describes the fabrication process of the phototransistor using a thin silicon membrane. By measuring I-V characteristics of the completed device in deformed states, we demonstrate that this approach improves the mechanical and electrical stabilities of the phototransistor array. We expect that this approach to a flexible phototransistor can be widely used for the applications of not only next-generation imaging systems/optoelectronics but also wearable devices such as tactile/pressure/temperature sensors and health monitors.

We present a detailed method to fabricate a deformable lateral NIPIN phototransistor array for curved image sensors. The phototransistor array with an open mesh form, which is composed of thin silicon islands and stretchable metal interconnectors, provides flexibility and stretchability. The parameter analyzer characterizes the electrical property of the fabricated phototransistor.

横 NIPIN フォト トランジスタを用いた柔軟な画像センサーの作製

Flexible photodetectors have been intensely studied for the use of curved image sensors, which are a crucial component in bio-inspired imaging systems, ...

Synthesis, Functionalization, and Characterization of Fusogenic Porous Silicon Nanoparticles for Oligonucleotide Delivery

With the advent of gene therapy, the development of an effective in vivo nucleotide-payload delivery system has become of parallel import. Fusogenic porous silicon nanoparticles (F-pSiNPs) have recently demonstrated high in vivo gene silencing efficacy due to its high oligonucleotide loading capacity and unique cellular uptake pathway that avoids endocytosis. The synthesis of F-pSiNPs is a multi-step process that includes: (1) loading and sealing of oligonucleotide payloads in the silicon pores; (2) simultaneous coating and sizing of fusogenic lipids around the porous silicon cores; and (3) conjugation of targeting peptides and washing to remove excess oligonucleotide, silicon debris, and peptide. The particle&#8217;s size uniformity is characterized by dynamic light scattering, and its core-shell structure may be verified by transmission electron microscopy. The fusogenic uptake is validated by loading a lipophilic dye, 1,1&#39;-dioctadecyl-3,3,3&#39;,3&#39;-tetramethylindocarbocyanine perchlorate (DiI), into the fusogenic lipid bilayer and treating it to cells in vitro to observe for plasma membrane staining versus endocytic localizations. The targeting and in vivo gene silencing efficacies were previously quantified in a mouse model of Staphylococcus aureus pneumonia, in which the targeting peptide is expected to help the F-pSiNPs to home to the site of infection. Beyond its application in S. aureus infection, the F-pSiNP system may be used to deliver any oligonucleotide for gene therapy of a wide range of diseases, including viral infections, cancer, and autoimmune diseases.

We demonstrate the synthesis of fusogenic porous silicon nanoparticles for effective in vitro and in vivo oligonucleotide delivery. Porous silicon nanoparticles are loaded with siRNA to form the core, which is coated by fusogenic lipids through extrusion to form the shell. Targeting moiety functionalization and particle characterization are included.

合成、機能化、およびオリゴヌクレオチド配信の融合性ポーラス シリコンのナノ粒子のキャラクタリゼーション

With the advent of gene therapy, the development of an effective in vivo nucleotide-payload delivery system has become of parallel import. Fusogenic ...

Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars

We present microfabrication protocols for rendering intrinsically wetting materials repellent to liquids (omniphobic) by creating gas-entrapping microtextures (GEMs) on them comprising cavities and pillars with reentrant and doubly reentrant features. Specifically, we use SiO2/Si as the model system and share protocols for two-dimensional (2D) designing, photolithography, isotropic/anisotropic etching techniques, thermal oxide growth, piranha cleaning, and storage towards achieving those microtextures. Even though the conventional wisdom indicates that roughening intrinsically wetting surfaces (&#952;o &#60; 90&#176;) renders them even more wetting (&#952;r &#60; &#952;o &#60; 90&#176;), GEMs demonstrate liquid repellence despite the intrinsic wettability of the substrate. For instance, despite the intrinsic wettability of silica &#952;o &#8776; 40&#176; for the water/air system, and &#952;o &#8776; 20&#176; for the hexadecane/air system, GEMs comprising cavities entrap air robustly on immersion in those liquids, and the apparent contact angles for the droplets are &#952;r &#62; 90&#176;. The reentrant and doubly reentrant features in the GEMs stabilize the intruding liquid meniscus thereby trapping the liquid-solid-vapor system in metastable air-filled states (Cassie states) and delaying wetting transitions to the thermodynamically-stable fully-filled state (Wenzel state) by, for instance, hours to months. Similarly, SiO2/Si surfaces with arrays of reentrant and doubly reentrant micropillars demonstrate extremely high contact angles (&#952;r &#8776; 150&#176;&#8211;160&#176;) and low contact angle hysteresis for the probe liquids, thus characterized as superomniphobic. However, on immersion in the same liquids, those surfaces dramatically lose their superomniphobicity and get fully-filled within &#60;1 s. To address this challenge, we present protocols for hybrid designs that comprise arrays of doubly reentrant pillars surrounded by walls with doubly reentrant profiles. Indeed, hybrid microtextures entrap air on immersion in the probe liquids. To summarize, the protocols described here should enable the investigation of GEMs in the context of achieving omniphobicity without chemical coatings, such as perfluorocarbons, which might unlock the scope of inexpensive common materials for applications as omniphobic materials. Silica microtextures could also serve as templates for soft materials.

Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars

This work presents microfabrication protocols for achieving cavities and pillars with reentrant and doubly reentrant profiles on SiO2/Si wafers using photolithography and dry etching. Resulting microtextured surfaces demonstrate remarkable liquid repellence, characterized by robust long-term entrapment of air under wetting liquids, despite the intrinsic wettability of silica.

再入可能および二重再入可能なキャビティまたは柱を含むガスを覆うマイクロテクスチャを彫ることによってSiO2/Si表面をレンダリングする

We present microfabrication protocols for rendering intrinsically wetting materials repellent to liquids (omniphobic) by creating gas-entrapping ...

Metal-Assisted Electrochemical Nanoimprinting of Porous and Solid Silicon Wafers

Metal-assisted electrochemical imprinting (Mac-Imprint) is a combination of metal-assisted chemical etching (MACE) and nanoimprint lithography that is capable of direct patterning 3D micro- and nanoscale features in monocrystalline group IV (e.g., Si) and III-V (e.g., GaAs) semiconductors without the need of sacrificial templates and lithographical steps. During this process, a reusable stamp coated with a noble metal catalyst is brought in contact with a Si wafer in the presence of a hydrofluoric acid (HF) and hydrogen peroxide (H2O2) mixture, which leads to the selective etching of Si at the metal-semiconductor contact interface. In this protocol, we discuss the stamp and substrate preparation methods applied in two Mac-Imprint configurations: (1) Porous Si Mac-Imprint with a solid catalyst; and (2) Solid Si Mac-Imprint with a porous catalyst. This process is high throughput and is capable of centimeter-scale parallel patterning with sub-20 nm resolution. It also provides low defect density and large area patterning in a single operation and bypasses the need for dry etching such as deep reactive ion etching (DRIE).

A protocol for metal-assisted chemical imprinting of 3D microscale features with sub-20 nm shape accuracy into solid and porous silicon wafers is presented.

金属補導電気化学ナノインプリンティングの多孔質および固体シリコンウエハー

Metal-assisted electrochemical imprinting (Mac-Imprint) is a combination of metal-assisted chemical etching (MACE) and nanoimprint lithography that is ...

Focused Ion Beam Lithography to Etch Nano-architectures into Microelectrodes

With advances in electronics and fabrication technology, intracortical microelectrodes have undergone substantial improvements enabling the production of sophisticated microelectrodes with greater resolution and expanded capabilities. The progress in fabrication technology has supported the development of biomimetic electrodes, which aim to seamlessly integrate into the brain parenchyma, reduce the neuroinflammatory response observed after electrode insertion and improve the quality and longevity of electrophysiological recordings. Here we describe a protocol to employ a biomimetic approach recently classified as nano-architecture. The use of focused ion beam lithography (FIB) was utilized in this protocol to etch specific nano-architecture features into the surface of non-functional and functional single shank intracortical microelectrodes. Etching nano-architectures into the electrode surface indicated possible improvements of biocompatibility and functionality of the implanted device. One of the benefits of using FIB is the ability to etch on manufactured devices, as opposed to during the fabrication of the device, facilitating boundless possibilities to modify numerous medical devices post-manufacturing. The protocol presented herein can be optimized for various material types, nano-architecture features, and types of devices. Augmenting the surface of implanted medical devices can improve the device performance and integration into the tissue.

We have shown that the etching of nano-architecture into intracortical microelectrode devices may reduce the inflammatory response and has the potential to improve electrophysiological recordings. The methods described herein outline an approach to etch nano-architectures into the surface of non-functional and functional single shank silicon intracortical microelectrodes.

マイクロ電極へのエッチングナノアーキテクチャへの集束イオンビームリソグラフィー

With advances in electronics and fabrication technology, intracortical microelectrodes have undergone substantial improvements enabling the production of ...

ライト強化フッ酸不動態化：バルクシリコン欠陥を検出するための高感度テクニック

要約

さらに動画を探す

この動画の章

フォトニック結晶スローライト導波路とキャビティの作製と評価

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

液体環境におけるパルスUVレーザー照射によるシリコン表面の濡れ性の選択エリア変更

走査型電子顕微鏡による半導体材料における拡張欠陥の総合的な特性評価

のための新しい方法

横 NIPIN フォトトランジスタを用いた柔軟な画像センサーの作製

合成、機能化、およびオリゴヌクレオチド配信の融合性ポーラスシリコンのナノ粒子のキャラクタリゼーション

再入可能および二重再入可能なキャビティまたは柱を含むガスを覆うマイクロテクスチャを彫ることによってSiO₂/Si表面をレンダリングする

金属補導電気化学ナノインプリンティングの多孔質および固体シリコンウエハー

マイクロ電極へのエッチングナノアーキテクチャへの集束イオンビームリソグラフィー

ライト強化フッ酸不動態化：バルクシリコン欠陥を検出するための高感度テクニック

要約

さらに動画を探す

この動画の章

フォトニック結晶スローライト導波路とキャビティの作製と評価

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

液体環境におけるパルスUVレーザー照射によるシリコン表面の濡れ性の選択エリア変更

走査型電子顕微鏡による半導体材料における拡張欠陥の総合的な特性評価

のための新しい方法

横 NIPIN フォト トランジスタを用いた柔軟な画像センサーの作製

合成、機能化、およびオリゴヌクレオチド配信の融合性ポーラス シリコンのナノ粒子のキャラクタリゼーション

再入可能および二重再入可能なキャビティまたは柱を含むガスを覆うマイクロテクスチャを彫ることによってSiO2/Si表面をレンダリングする

金属補導電気化学ナノインプリンティングの多孔質および固体シリコンウエハー

マイクロ電極へのエッチングナノアーキテクチャへの集束イオンビームリソグラフィー

横 NIPIN フォトトランジスタを用いた柔軟な画像センサーの作製

合成、機能化、およびオリゴヌクレオチド配信の融合性ポーラスシリコンのナノ粒子のキャラクタリゼーション

再入可能および二重再入可能なキャビティまたは柱を含むガスを覆うマイクロテクスチャを彫ることによってSiO₂/Si表面をレンダリングする