effect-bending-on-electrical-characteristics-flexible-organic-single

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

The charge transport in an organic semiconductor depends highly on the molecular packing in the crystal, which influences the electronic coupling ...

Academia Sinica

National Central University

A series of polyfused aromatics containing coronene and perylene in their frameworks was successfully constructed by a modified Ramirez-Corey-Fuchs reaction as the key reaction. Typical six-membered annulation and atypical five-membered annulation through controlled reaction conditions led to a range of extensively conjugate aromatics as possible candidates for organic semiconductors. A significant p-type field-effect mobility of 0.42-0.64 cm(2)/V·s was obtained from one of the derivatives, dibenzo[a,d]coronene.

Unsymmetrically Extended Polyfused Aromatics Embedding Coronene and Perylene Frameworks: Syntheses and Properties.

A new class of benzopyrene-based semiconducting molecules is prepared and characterized. A four-step protocol involving Suzuki coupling and aromatic dehydrogenation reactions renders the new unsymmetrical framework. Introduction of various substituents at the dibenzopyrene framework modulates mainly the optoelectronic properties rather than the packing motif. Single-crystal field-effect transistors fabricated from these materials show a mobility ranging from 0.7 to 3.2 cm(2)/(V s). The highest mobility, 3.2 cm(2)/(V s), with an on/off ratio of 10(4)-10(5) was achieved for 11-methoxy-8-(4-methoxyphenyl)dibenzo[a,e]pyrene.

Man-Tzu Ho

Institution of Chemistry

Academia Sinica

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Man-Tzu Ho

.css-o250i3{font-size:18px;font-family:Open Sans,sans-serif;line-height:21.6px;}Institution of Chemistry

Academia Sinica

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Institution of Chemistry