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Fraunhofer Institute for Integrated Systems and Device Technology (IISB)
Andreas Hutzler*,1,
Birk Fritsch*,1,
Michael P. M. Jank2,
Robert Branscheid3,
Erdmann Spiecker3,
Martin März1,2,4
1Electron Devices (LEB), Department of Electrical, Electronic and Communication Engineering, Friedrich-Alexander University Erlangen-Nürnberg,
2, Fraunhofer Institute for Integrated Systems and Device Technology (IISB),
3Institute of Micro- and Nanostructure Research (IMN) and Center for Nanoanalysis and Electron Microscopy (CENEM), Department of Materials Science and Engineering, Friedrich-Alexander University Erlangen-Nürnberg,
4Power Electronics (LEE), Department of Electrical, Electronic and Communication Engineering, Friedrich-Alexander University Erlangen-Nürnberg
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