Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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11:14 min
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May 28th, 2016
DOI :
May 28th, 2016
•Rozdziały w tym wideo
0:05
Title
1:16
Sample Preparation for Cryo-cathodoluminescence Experiment
6:28
Performing Cross-correlation Electron Backscatter Diffraction Experiments
8:50
Results: Cathodoluminenscence and Strain Fields of Extended Defects in Silicon
2:06
Cryo-cathodoluminescence Experiment
10:19
Conclusion
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