Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

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08:12 min

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September 8th, 2017

DOI :

10.3791/55404-v

September 8th, 2017

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Carolin M. Sutter-Fella*¹^,²^,³, Yanbo Li*¹^,⁴, Nicola Cefarin¹^,⁵^,⁶, Aya Buckley¹^,⁷, Quynh Phuong Ngo⁸^,⁹, Ali Javey²^,³, Ian D. Sharp¹, Francesca M. Toma¹

¹Joint Center for Artificial Photosynthesis, Chemical Sciences Division, Lawrence Berkeley National Laboratory, ²Electrical Engineering and Computer Sciences, University of California, Berkeley, ³Materials Science Division, Lawrence Berkeley National Laboratory, ⁴Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, ⁵Department of Physics, Graduate School of Nanotechnology, University of Trieste, ⁶TASC Laboratory, IOM-CNR - Istituto Officina dei Materiali, ⁷Department of Chemistry, University of California, Berkeley, ⁸Materials Science and Engineering, University of California, Berkeley, ⁹Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory

Podsumowanie

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Keywords Perovskite Films

Vapor assisted Solution Process

Low Processing Temperature

Recrystallization

Methylammonium Lead Halide

Rozdziały w tym wideo

0:05

Title

0:52

Preparation of Methylammonium Halide

7:12

Conclusion

5:30

Results: Formation of Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

2:50

Preparation of Methylammonium Lead Halide Thin Films

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