Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
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9.5K Views
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08:12 min
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September 8th, 2017
DOI :
September 8th, 2017
•Carolin M. Sutter-Fella*1,2,3, Yanbo Li*1,4, Nicola Cefarin1,5,6, Aya Buckley1,7, Quynh Phuong Ngo8,9, Ali Javey2,3, Ian D. Sharp1, Francesca M. Toma1
1Joint Center for Artificial Photosynthesis, Chemical Sciences Division, Lawrence Berkeley National Laboratory, 2Electrical Engineering and Computer Sciences, University of California, Berkeley, 3Materials Science Division, Lawrence Berkeley National Laboratory, 4Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, 5Department of Physics, Graduate School of Nanotechnology, University of Trieste, 6TASC Laboratory, IOM-CNR - Istituto Officina dei Materiali, 7Department of Chemistry, University of California, Berkeley, 8Materials Science and Engineering, University of California, Berkeley, 9Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory
Rozdziały w tym wideo
0:05
Title
0:52
Preparation of Methylammonium Halide
7:12
Conclusion
5:30
Results: Formation of Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
2:50
Preparation of Methylammonium Lead Halide Thin Films
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