fabrication-uniform-nanoscale-cavities-via-silicon-direct-wafer

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Measurements of the heat capacity and superfluid fraction of confined 4He have been performed near the lambda transition using lithographically patterned ...

University of Maryland

The National Institute of Standards and Technology

We report measurements of the superfluid fraction ρ(s)/ρ and specific heat c(p) near the superfluid transition of 4He when confined in an array of (2  μm)3 boxes at a separation of S=2  μm and coupled through a 32.5 nm film. We find that c(p) is strongly enhanced when compared with data where coupling is not present. An analysis of this excess signal shows that it is proportional to the finite-size correlation length in the boxes ξ(t,L), and it is measurable as far as S/ξ∼30-50. We obtain ξ(0,L) and the scaling function (within a constant) for ξ(t,L) in an L3 box geometry. Furthermore, we find that ρ(s)/ρ of the film persists a full decade closer to the bulk transition temperature T(λ) than a film uninfluenced by proximity effects. This excess in ρ(s)/ρ is measurable even when S/ξ>100, which cannot be understood on the basis of mean field theory.

Justin K. Perron

Joint Quantum Institute

University of Maryland

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Justin K. Perron

.css-o250i3{font-size:18px;font-family:Open Sans,sans-serif;line-height:21.6px;}Joint Quantum Institute

University of Maryland

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Joint Quantum Institute