silicon-metal-oxide-semiconductor-quantum-dots-for-single-electron

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by ...

Aalto University

Nanoscale single-electron pumps can be used to generate accurate currents, and can potentially serve to realize a new standard of electrical current based on elementary charge. Here, we use a silicon-based quantum dot with tunable tunnel barriers as an accurate source of quantized current. The charge transfer accuracy of our pump can be dramatically enhanced by controlling the electrostatic confinement of the dot using purposely engineered gate electrodes. Improvements in the operational robustness, as well as suppression of nonadiabatic transitions that reduce pumping accuracy, are achieved via small adjustments of the gate voltages. We can produce an output current in excess of 80 pA with experimentally determined relative uncertainty below 50 parts per million.

Tuomo Tanttu

QCD Labs,
COMP Centre of Excellence,
Department of Applied Physics,
QCD Labs, COMP Centre of Excellence, Department of Applied Physics

Aalto University

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Tuomo Tanttu

.css-o250i3{font-size:18px;font-family:Open Sans,sans-serif;line-height:21.6px;}QCD Labs,COMP Centre of Excellence,Department of Applied Physics,QCD Labs, COMP Centre of Excellence, Department of Applied Physics

Aalto University

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

QCD Labs,
COMP Centre of Excellence,
Department of Applied Physics,
QCD Labs, COMP Centre of Excellence, Department of Applied Physics