u2o5-film-preparation-via-uo2-deposition-direct-current-sputtering

U2O5 Film Preparation via UO2 Deposition by Direct Current Sputtering and Successive Oxidation and Reduction with Atomic Oxygen and Atomic Hydrogen

We describe a method to produce U2O5 films in situ using the Labstation, a modular machine developed at JRC Karlsruhe. The Labstation, an essential part ...

Directorate for Nuclear Safety and Security

A new type of uranium binary hydride, UH, with the CaF crystal structure, was synthesized in a thin-film form using reactive sputter deposition at low temperatures. The material has a grain size of 50-100 nm. The lattice parameter a = (535.98 ± 0.14 pm) is close to that in known Np (534.3 pm) and Pu (535.9 pm) iso-types. UH is a metallic ferromagnet with the Curie temperature T ≈ 120 K. A very wide hysteresis loop indicates strong magnetocrystalline anisotropy. X-ray photoelectron spectroscopy reveals similarities with electronic structure of UH, which is also ferromagnet with higher T = 165 K.

Thomas Gouder

European Commission,
Joint Research Centre,
European Commission, Joint Research Centre

Directorate for Nuclear Safety and Security

U₂O₅ Film Preparation via UO₂Deposition by Direct Current Sputtering and Successive Oxidation and Reduction with Atomic Oxygen and Atomic Hydrogen

Thomas Gouder

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Directorate for Nuclear Safety and Security

U2O5 Film Preparation via UO2 Deposition by Direct Current Sputtering and Successive Oxidation and Reduction with Atomic Oxygen and Atomic Hydrogen

European Commission,
Joint Research Centre,
European Commission, Joint Research Centre

U₂O₅ Film Preparation via UO₂Deposition by Direct Current Sputtering and Successive Oxidation and Reduction with Atomic Oxygen and Atomic Hydrogen