Bu araştırma projesi CSG Güneş Pty Ltd Jing Rao ile bağlantı hibe yoluyla Avustralya Araştırma Konseyi tarafından destekleniyor NSW Rektör Yardımcısı Doktora Sonrası Araştırma Bursu onu Üniversitesi kabul eder. SEM görüntüleri NSW Üniversitesi Elektron Mikroskobu Birimi tarafından sağlanan ekipman kullanarak Park Jongsung tarafından çekilmiştir.

1. Polikristalin silikon güneş hücreleri Fabrikasyon (Animasyon 3) <ol><li> Silikon film biriktirme <ol class="lalpha"><li> ~ 100 dışarı pişirme ile e-demeti buharlaştırma aracı hazırlayın ° C &lt;3E-8 Torr taban basıncına ulaşmak için gece boyunca. 150 ° C bekleme sıcaklığı Preset örnek ısıtıcı. </li><li> 5x5 cm 2 (veya 10 x10 cm 2) substrat borosilikat cam (Schott Borofloat33) ile ~ silisyum nitrür 80 nm (N 2 ve SiH 4 karışımından PECVD tarafından hazırlanan) kaplı kalın 1.1 veya 3.3 mm, yapılmış bir yüzey kullanın. </li><li> Tozunu ve bir numune tutucu içine yerleştirmek için kuru azot ile substratın yüzeyine üfleyin. , Yük kilidi havalandırın örnek yük basıncı &lt;1E5 Torr aşağı yük kilitlemek pompalamak ve ana odasına örnek aktarmak. 250 ° C arasında set-noktasına ısıtıcı başlat Basınç 8E-8 Torr ya da daha düşük ulaştığında yaklaşık 20 dakika boyunca Pompa. </li><li> Kontrol edin dopantkaynak ve silikon kaynak kepenkler kapalı. Bekleme sıcaklıklara Preset dopant kaynak sıcaklıkları, 700 fosfor kaynağı sıcaklığı yani ° 1250 C ve bor kaynağı ° C E-gun başlayın ve yavaş yavaş e-gun akımını artırarak bir potada silikon eritebilir. </li><li> Gerekli P konsantrasyonları ve B ile takviye edilmiş silikon tabakalar buharlaşması: P -3 1E20 cm 35 nm verici: gerekli akım (bu akım e-gun ve Si kaynak koşullarına bağlı olarak değişebilir önceki kalibrasyon) ulaşıldığında ; 2 B -3 5E15 cm ~ 3 mikron emici B. tam dopant konsantrasyonlarının -3 4E19 cm 100 nm arka yüzey alanı (BSF) olarak Kuvars Kristal Monitör ile ölçülen, belirli Si çökelme oranlarının eşleştirerek elde edilir (QCM), belirli dopant kaynak sıcaklıkları, SIMS kalibrasyon kurulan ilişkileri kullanarak. </li><li> Buharlaşma ısıtıcı kapatın yapıldıktan sonra ~ 10 dakika örnek soğuması. Transyük kilidi için örnek fer, kapı-vanasını kapatın yük kilit delik ve silikon film ile örnek boşaltın. </li></ol></li><li> Silikon kristalizasyon Örnek 10x10 cm 2 ise, kristalizasyon önce dört 5x5 cm 2 hücre boyutu parçalar halinde kesilebilir. Pürüzlü ve silisyum nitrür kaplama Schott ROBAX cam (yapışmasını önlemek için) yapılmış bir tutucu üzerindeki cam (yukarı Si film) üzerinde biriken silikon filmi yerleştirin. Bir azot tasfiye fırına Yük 200-300 ısıtılmış ° C 3 ° C de ~ 5 ° C / dak 600 sıcaklığı kadar rampa ve 30 saat tavlama. Fırın ısıtıcı açın ve ~ 200 doğal aşağı fırın soğumaya bırakın ° C (2 ~ 3 saat) örnek boşaltma önce. Örnek kristalizasyon sırasında silikon büzülmesine bağlı içbükey bir şekle sahip olabilir. Bu, aşağıdaki hızlı bir ısıl işleme sırasında dümdüz olacaktır. </li><li> Tavlama dopant aktivasyon ve defekt (RTA) Pirolitik grafit ve l yapılmış bir tutucu kristalize film ile örnek yerleştirinargon ile temizlenir hızlı bir termal işlemciye OAD. ° C 1 ° C / s, daha sonra 1000 ° C ile 20 ° C / s ~ 100 doğal sonra soğuk 1 dakika basılı ° C ve boşaltma 600 sıcaklığına kadar rampa. </li><li> Yüzey oksit giderme Hemen önce hidrojenasyon ile kristalizasyon ve RTA sırasında silikon film üzerinde oluşmuş yüzey oksit çıplak silikon filmin yüzeyi hidrojen maruz emin olmak için çıkarılması gerekir. Silikon yüzeye hidrofobik olana kadar% 5 HF çözelti içine daldırın tavlanmış numune (30 ~ 100 s). Deiyonize su ile durulayın ve bir azot tabanca ile kurulayın. </li><li> Kusur pasivasyon Uzaktan hidrojen plazma kaynağı ile donatılmış bir vakum haznesine Örnek yerleştirin. Aşağı Pompa &lt;1E-4 Torr kadar ~ 620 için ısı kadar örnek ° C (50:150 sccm) argon / hidrojen karışımı akışını açmak, basınç 50-100 mTorr set, 3.5 kW plazma kaynağı başlatmak mikrodalga güç ve ~ 10 dakika süreyle işlemi devam eder. Isıtıcı kapatın ederken maintasıcaklık plazma kapatarak ve gaz akışını durdurmadan önce 350 ° C&#39;nin altına düşene kadar başka bir 10-15 dk plazma ining. Sıcaklığının altında 200 ° C olduğunda, örnek boşaltma </li><li> Hücre metalizasyon Hücre metalizasyon ardışık fotolitografik desen, Al film biriktirme ve 11 &#39;de ayrıntılı olarak tarif edilen adımlar aşındırma bir dizi içinde gerçekleştirilmektedir. ANİMASYON 3 son slayt gösterildiği gibi son hücre görünüyor. Metalize bir hücrenin bir yakın görünümü Şekil 1&#39;de gösterilmektedir. </li><li> Metalize hücrenin EQE ölçün. </li></ol> 2. Plasmonic Ag Nanopartikül (Animasyon 4) Fabrikasyon <ol><li> Toz ve granül Ag (0.3-0.5 g) ile doldurulmuş bir W tekne içeren bir termal evaporatör içine numune yüklemek için kuru azot ile metalize hücre yüzeyinde üfleyin. 2 taban baskısı ~ 3E-5 Torr için buharlaştırma bölmesinin aşağı Pompa. Ag parametrelerle Programı QCM: Yoğunluk 10.50ve Z oranı 0,529. </li><li> Örnek deklanşör kapalı olduğundan, (gibi bir görünümü-port üzerinden gözlenen) W tekne ısıtıcı açmak ve Ag granülleri eriyene kadar 8E-5 Torr yukarıda basınç artışı önlemek için yavaş yavaş yeterli akım artacak emin olun. Basıncı 0.1-0.2 Å / s (kalibrasyon) ve Ag birikimi oranı tekabül set ayarladığınız mevcut ve depolanması işlemini başlatmak için deklanşöre açın. Dengeleyip sonra </li><li> QCM kullanarak büyüyen Ag film kalınlığı Monitör ve 14 nm kalınlığında ulaşıldığında deklanşör kapatın. W tekne yaklaşık 15 dakika soğumasını bekleyin, örnek boşaltın. Filmin Ag oksidasyonu önlemek için mümkün olan en kısa zamanda tevdi edilmesinden sonra nanopartiküller oluşturmak üzere tav edilmelidir. </li><li> Taze tevdi Ag film ile bir hücrenin 230 0.1-0.2 50 dakika süreyle tavlanmış ° C, ısıtılmış bir nitrojen tasfiye fırına yerleştirilir ve daha sonra boşaltılır. Nanopartiküller bağlı yüzey görünüşü değişim not edin. Ag Nanopartiküllerin elektron mikroskobu görüntüsü Tarama sho olduğunuŞekil wn. 2. </li><li> Nanoparçacık dizi ile hücrenin EQE ölçün. </li></ol> 3. Arka Reflektör Fabrikasyon Arka reflektör MgF 2 (RI 1.38) ticari bir beyaz tavan boyası (Dulux) bir kat yalıtkan kaplama kalınlığı ~ 300 nm oluşur. <ol><li> Arka reflektör imalatı önce hücre rehber onlara siyah bir işaretleyici mürekkep uygulanarak korunacak zorunda olan bir asansör-off sürecinde dielektrik altındaki kişileri teşhir sağlar. </li><li> NP dizi ve tozu temizlemek için boyalı kişiler ile örnek esmeye azot silahı kullanın. Uzaklıkta nanopartiküller darbe değil mütevazı azot basıncı ve egzersiz dikkatli olun. MgF 2 parça ile doldurulmuş bir W tekne ihtiva eden ısıl buharlaştırıcı içinde Örnek yerleştirin. 2 ~ 3E-5 Torr basınca evaporatör aşağı pompalayın. Yoğunluk 3.05 ve Z oranı 0,637: MgF 2 QCM parametreleri ayarlayın. </li><li> Emin olun örnek shutter kapalı, tekne ısıtıcı açın ve yavaş yavaş MgF 2 gibi bir görünümü-port üzerinden görüldü eriyene kadar aşırı basınç artışı önlemek için akım artacak. Basıncı 0.3 nm / s MgF 2 çökelme hızı tekabül set mevcut ayarlayın ve örnek çekim açın. Dengeleyip sonra </li><li> QCM kullanarak yatırılan kalınlığı izleyin ve 300 nm ulaşıldığında deklanşör kapatın. </li><li> Isıtıcı kapatın. W tekne yaklaşık 15 dakika soğumasını bekleyin, örnek boşaltın. MgF 2 kaplama ile hücre görünümü değişikliği unutmayın. </li><li> Hücre kişilerden mürekkep maskesini kaldırmak için dielektrik aseton içine kaplama ile hücre batırmayın. Mürekkep Yukarıdaki dielektrik çatlama ve kapalı kaldırma başlayana kadar bekleyin. Dielektrik tüm mürekkep kaldırılır ve metal tamamen açık kadar aseton içinde hücre tutmak. Asetondan örnek çıkarın, taze aseton ile yıkayın ve azot tabanca ile kurulayın. </li><li> Bir tabakası uygulatüm hücre yüzeyinde ince bir fırça ile beyaz boya (Dulux Bir-Coat tavan boyası) dikkatle metal temas kaçınarak. Boya tabakasının parlak ışık kaynağına boyalı hücre yoluyla bakarken hiç ışık görülebilir, böylece tamamen opak (~&gt; 0.5 mm) olması yeterli kalınlıkta olmalıdır. Bir gün için kuru boya edelim. </li><li> Beyaz boya arka reflektör ile hücrenin EQE ölçün. </li></ol> 4. Temsilcisi Sonuçlar Güneş pili kısa devre akımı standart global güneş tayfı EQE eğrisi (hava kütlesi 1,5) entegre ederek hesaplanır. Işık-tutucu bağlı hücre akımı ve onun donanım hem de hücre emici tabakasının kalınlığına bağlıdır: kendisi mevcut kalın hücreleri için yüksek, fakat mevcut donanım ince cihazlar için, EQE için ilgili veriler ve animasyon 5 için bakınız Tablo 1 yüksek olduğu eğrileri. Işık yakalayan, h olmadan orijinal 2 mikron kalınlığında hücreleri,ave Jsc adım 1.7 ölçülür.) ~ 15 mA / cm 2. Bir nanoparçacık dizi fabrikasyon sonra, Jsc% 32 geliştirmesidir yaklaşık 20 mA / cm 2 kadar yükselir. Bu arka diffüz reflektör sadece tarafından% 25-30 oranında arttırılması etkisi biraz daha iyidir. Plasmonic nanoparçacık dizisi ile hücreye kaplama MgF 2 üzerindeki arka yaygın reflektör ilave edildikten sonra, Jsc 22.3 mA / cm 2 daha da artmış bir deyişle yaklaşık% 45 iyileştirme edilir. Göreceli geliştirme biraz daha düşük iken 3 mikron kalınlığında bir hücre için tüm akımları 25,7 mA / cm 2, daha yüksek olduğunu unutmayın,% 42: ışık yakalayan ince cihazlar nispeten daha büyük bir etkiye sahiptir. <table border="1"><tbody><tr><td> Hücre kalınlığı: </td><td colspan="2"> 2 mikron </td><td colspan="2"> 3 mikron </td></tr><tr><td></td><td> Jsc, mA / cm 2 </td><td><s<html> Trong&gt; +% </td><td> Jsc, mA / cm 2 </td><td> +% </td></tr><tr><td> orijinal hücre </td><td> 15.4 </td><td></td><td> 18.1 </td><td></td></tr><tr><td> Arka diffüz reflektör (R) </td><td> 20.1 </td><td> 30.5 </td><td> 21.5 </td><td> 18.8 </td></tr><tr><td> Nanopartiküller (NP) </td><td> 20.3 </td><td> 31.8 </td><td> 21.9 </td><td> 21.0 </td></tr><tr><td> NP / MgF 2 / R </td><td> 22.3 </td><td> 45.3 </td><td> 25.7 </td><td> 42.0 </td></tr></tbody></table> Tablo 1. Plasmonic hücre kısa devre akımı ve özgün hücre göre Zenginleştiricisi. <img alt="Şekil 1" src="/files/ftp_upload/4092/4092fig1.jpg" /> Metalizasyon ızgara ile poli-Si ince film güneş pili Şekil 1. Close-up görünümünde. / Ftp_upload/4092/4092fig2.jpg &quot;/&gt; Şekil 2. Silikon yüzeye Ag nanopartiküllerin elektron mikroskobu görüntüsü taranıyor. <img alt="Şekil 3" src="/files/ftp_upload/4092/4092fig3.jpg" /> Şekil 3. Bir plasmonic kristal silisyum ince film güneş pili (ölçeksiz) şematik görünümü. <img alt="Şekil 4" src="/files/ftp_upload/4092/4092fig4.jpg" /> Şekil 4 diffüz reflektör ve plasmonic nano partiküller ile polikristalin silikon ince-film hücreler için geçerli Harici kuantum verimliliği ve kısa devre: kesik-siyah - Orijinal 2 mikron kalınlığında hücre ışık yakalayan, Jsc 15.36 mA / cm 2 olmaksızın; mavi - hücre. diffüz boya reflektör, Jsc 20.08 mA / cm 2; kırmızı - plasmonic Ag nanopartiküller ile hücre, Jsc 20.31 mA / cm 2; yeşil - nanopartiküller ile hücre, MgF 2, ve yaygın boya reflektör, Jsc </em&gt; 22,32 mA / cm 2. Mor - 3 mikron kalınlığında hücreli (3 mm kalınlığında cam üzerine) nanopartiküller ile MgF 2, ve diffüz reflektör, Jsc 25.7 mA / cm 2 (bağlı AR katmanları ve emiter kalınlığı kasıtsız farklılıklar düşük mavi yanıt unutmayın). Katı siyah - plazma gelişmiş kimyasal buhar biriktirme (3 mm kalınlığında cam üzerine), karşılaştırma için gösterilen Jsc 26,4 mA / cm 2, tarafından hazırlanan 2 mikron kalınlığında doku hücresi. Animasyon 1. <a href="http://www.jove.com/files/ftp_upload/4092/4092animation1.pptx" target="_blank">Animasyon görmek için buraya tıklayın</a> . Animasyon 2. <a href="http://www.jove.com/files/ftp_upload/4092/4092animation2.pptx" target="_blank">Animasyon görmek için buraya tıklayın</a> . Animasyon 3. <a href="http://www.jove.com/files/ftp_upload/4092/4092animation3.pptx" target="_blank">Animasyon görmek için buraya tıklayın</a>. Animasyon 4. <a href="http://www.jove.com/files/ftp_upload/4092/4092animation4.pptx" target="_blank">Animasyon görmek için buraya tıklayın</a> . Animasyon 5. <a href="http://www.jove.com/files/ftp_upload/4092/4092animation5.pptx" target="_blank">Animasyon görmek için buraya tıklayın</a> .

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Çıkar çatışması ilan etti.

Evaporated polikristalin silikon güneş pilleri ve saçılım plasmonic nanopartiküller ışık yakalama için ideal ortaktır. Bu tür hücreler düzlemsel vardır, dolayısıyla dokulu yüzeyler saçılım güvenemez, ne plasmonic nanopartiküller kolayca dokulu yüzeyler üzerinde oluşturulabilir. Hücreler de saçılım en etkili plasmonic için en iyi nanoparçacık konumu olması umulur doğrudan maruz silisyum, yalnızca bir, arka yüzeye sahip. Bu kristalin silikon ışık-bindirme için en önemli 700 ve 100...

<table border="1"><tbody><tr><td> Reaktif Adı </td><td> Şirket </td><td> Katalog numarası </td><td> Yorumlar </td></tr><tr><td> Gümüş granüler </td><td> Sigma-Aldrich </td><td> 303372 </td><td> % 99.99 </td></tr><tr><td> MgF 2, rastgele kristaller, optik notu </td><td> Sigma-Aldrich </td><td> 378836 </td><td> &gt; =% 99.99 </td></tr><tr><td> Dulux tek kat tavan boyası </td><td> Dulux </td><td></td><td> R&gt;% 90 (500-1100 nm) </td></tr></tbody></table>

polycrystalline silicon thin-film solar cells with plasmonic-enhanced light-trapping

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach.
The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles.
To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 &mu;m thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm2, which can be increased up to 17-18 mA/cm2 (~25% higher) after application of a simple diffuse back reflector made of a white paint.
To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23&deg;C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing conditions. An optimised nanoparticle array alone results in cell Jsc enhancement of about 28%, similar to the effect of the diffuse reflector. The photocurrent can be further increased by coating the nanoparticles by a low refractive index dielectric, like MgF2, and applying the diffused reflector. The complete plasmonic cell structure comprises the polycrystalline silicon film, a silver nanoparticle array, a layer of MgF2, and a diffuse reflector. The Jsc for such cell is 21-23 mA/cm2, up to 45% higher than Jsc of the original cell without light-trapping or ~25% higher than Jsc for the cell with the diffuse reflector only.
Introduction
Light-trapping in silicon solar cells is commonly achieved via light scattering at textured interfaces. Scattered light travels through a cell at oblique angles for a longer distance and when such angles exceed the critical angle at the cell interfaces the light is permanently trapped in the cell by total internal reflection (Animation 1: Light-trapping). Although this scheme works well for most solar cells, there are developing technologies where ultra-thin Si layers are produced planar (e.g. layer-transfer technologies and epitaxial c-Si layers) 1 and or when such layers are not compatible with textures substrates (e.g. evaporated silicon) 2. For such originally planar Si layer alternative light trapping approaches, such as diffuse white paint reflector 3, silicon plasma texturing 4 or high refractive index nanoparticle reflector 5 have been suggested.
Metal nanoparticles can effectively scatter incident light into a higher refractive index material, like silicon, due to the surface plasmon resonance effect 6. They also can be easily formed on the planar silicon cell surface thus offering a light-trapping approach alternative to texturing. For a nanoparticle located at the air-silicon interface the scattered light fraction coupled into silicon exceeds 95% and a large faction of that light is scattered at angles above critical providing nearly ideal light-trapping condition (Animation 2: Plasmons on NP). The resonance can be tuned to the wavelength region, which is most important for a particular cell material and design, by varying the nanoparticle average size, surface coverage and local dielectric environment 6,7. Theoretical design principles of plasmonic nanoparticle solar cells have been suggested 8. In practice, Ag nanoparticle array is an ideal light-trapping partner for poly-Si thin-film solar cells because most of these design principle are naturally met. The simplest way of forming nanoparticles by thermal annealing of a thin precursor Ag film results in a random array with a relatively wide size and shape distribution, which is particularly suitable for light-trapping because such an array has a wide resonance peak, covering the wavelength range of 700-900 nm, important for poly-Si solar cell performance. The nanoparticle array can only be located on the rear poly-Si cell surface thus avoiding destructive interference between incident and scattered light which occurs for front-located nanoparticles 9. Moreover, poly-Si thin-film cells do not requires a passivating layer and the flat base-shaped nanoparticles (that naturally result from thermal annealing of a metal film) can be directly placed on silicon further increases plasmonic scattering efficiency due to surface plasmon-polariton resonance 10.
The cell with the plasmonic nanoparticle array as described above can have a photocurrent about 28% higher than the original cell. However, the array still transmits a significant amount of light which escapes through the rear of the cell and does not contribute into the current. This loss can be mitigated by adding a rear reflector to allow catching transmitted light and re-directing it back to the cell. Providing sufficient distance between the reflector and the nanoparticles (a few hundred nanometers) the reflected light will then experience one more plasmonic scattering event while passing through the nanoparticle array on re-entering the cell and the reflector itself can be made diffuse - both effects further facilitating light scattering and hence light-trapping. Importantly, the Ag nanoparticles have to be encapsulated with an inert and low refractive index dielectric, like MgF2 or SiO2, from the rear reflector to avoid mechanical and chemical damage 7. Low refractive index for this cladding layer is required to maintain a high coupling fraction into silicon and larger scattering angles, which are ensured by the high optical contrast between the media on both sides of the nanoparticle, silicon and dielectric 6. The photocurrent of the plasmonic cell with the diffuse rear reflector can be up to 45% higher than the current of the original cell or up to 25% higher than the current of an equivalent cell with the diffuse reflector only.

Watch this Scientific Journal Video about Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping at JoVE.com

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

Camına Polikristal silikon ince film güneş pilleri kristalizasyon, kusur pasivasyon ve metalizasyon takip bor ve fosfor katkılı silikon tabakalar birikimi ile üretilmektedir. Işık yakalayan Plasmonic ~% 45 Fotoakım geliştirme sonuçlanan dağınık bir reflektör ile kapatılmış silikon hücrenin yüzeyinde Ag nanopartiküller oluşturarak tanıtıldı.

Plasmonic geliştirilmiş Işık-tutucu ile Polycrystalline Silikon İnce-film Solar hücreler

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To ...

polycrystalline-silicon-thin-film-solar-cells-with-plasmonic-enhanced

Research

JoVE Journal

Engineering

18.7K Görüntüleme.  University of New South Wales. Camına Polikristal silikon ince film güneş pilleri kristalizasyon, kusur pasivasyon ve metalizasyon takip bor ve fosfor katkılı silikon tabakalar birikimi ile üretilmektedir. Işık yakalayan Plasmonic ~% 45 Fotoakım geliştirme sonuçlanan dağınık bir reflektör ile kapatılmış silikon hücrenin yüzeyinde Ag nanopartiküller oluşturarak tanıtıldı.

Video: Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

Nanomoulding of Functional Materials, a Versatile Complementary Pattern Replication Method to Nanoimprinting

We describe a nanomoulding technique which allows low-cost nanoscale patterning of functional materials, materials stacks and full devices. Nanomoulding combined with layer transfer enables the replication of arbitrary surface patterns from a master structure onto the functional material. Nanomoulding can be performed on any nanoimprinting setup and can be applied to a wide range of materials and deposition processes. In particular we demonstrate the fabrication of patterned transparent zinc oxide electrodes for light trapping applications in solar cells.

We describe a nanomoulding technique which allows low-cost nanoscale patterning of functional materials, materials stacks and full devices. Nanomoulding can be performed on any nanoimprinting setup and can be applied to a wide range of materials and deposition processes.

Fonksiyonel Malzemelerin Nanomoulding, Nanoimprinting bir yönlü Tamamlayıcı Desen Çoğaltma Yöntemi

We describe a nanomoulding technique which  allows low-cost nanoscale patterning of functional materials, materials stacks  and full devices. Nanomoulding ...

Mühendislik

Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application

In this study, zinc oxide (ZnO) thin films with high c-axis (0002) preferential orientation have been successfully and effectively synthesized onto silicon (Si) substrates via different synthesized temperatures by using plasma enhanced chemical vapor deposition (PECVD) system. The effects of different synthesized temperatures on the crystal structure, surface morphologies and optical properties have been investigated. The X-ray diffraction (XRD) patterns indicated that the intensity of (0002) diffraction peak became stronger with increasing synthesized temperature until 400 oC. The diffraction intensity of (0002) peak gradually became weaker accompanying with appearance of (10-10) diffraction peak as the synthesized temperature up to excess of 400 oC. The RT photoluminescence (PL) spectra exhibited a strong near-band-edge (NBE) emission observed at around 375 nm and a negligible deep-level (DL) emission located at around 575 nm under high c-axis ZnO thin films. Field emission scanning electron microscopy (FE-SEM) images revealed the homogeneous surface and with small grain size distribution. The ZnO thin films have also been synthesized onto glass substrates under the same parameters for measuring the transmittance.
For the purpose of ultraviolet (UV) photodetector application, the interdigitated platinum (Pt) thin film (thickness ~100 nm) fabricated via conventional optical lithography process and radio frequency (RF) magnetron sputtering. In order to reach Ohmic contact, the device was annealed in argon circumstances at 450 oC by rapid thermal annealing (RTA) system for 10 min. After the systematic measurements, the current-voltage (I-V) curve of photo and dark current and time-dependent photocurrent response results exhibited a good responsivity and reliability, indicating that the high c-axis ZnO thin film is a suitable sensing layer for UV photodetector application.

We offered a method to directly synthesize high c-axis (0002) ZnO thin film by plasma enhanced chemical vapor deposition. The as-synthesized ZnO thin film combined with Pt interdigitated electrode was used as sensing layer for ultraviolet photodetector, showing a high performance through a combination of its good responsivity and reliability.

Sentezi ve Plazma ile yüksek c-ekseni ZnO İnce Film Karakterizasyonu CVD Sistemi ve UV Fotodetektör Uygulaması Enhanced

In this study, zinc oxide (ZnO) thin films with high c-axis (0002) preferential orientation have been successfully and effectively synthesized onto ...

Integration of Light Trapping Silver Nanostructures in Hydrogenated Microcrystalline Silicon Solar Cells by Transfer Printing

One of the potential applications of metal nanostructures is light trapping in solar cells, where unique optical properties of nanosized metals, commonly known as plasmonic effects, play an important role. Research in this field has, however, been impeded owing to the difficulty of fabricating devices containing the desired functional metal nanostructures. In order to provide a viable strategy to this issue, we herein show a transfer printing-based approach that allows the quick and low-cost integration of designed metal nanostructures with a variety of device architectures, including solar cells. Nanopillar poly(dimethylsiloxane) (PDMS) stamps were fabricated from a commercially available nanohole plastic film as a master mold. On this nanopatterned PDMS stamps, Ag films were deposited, which were then transfer-printed onto block copolymer (binding layer)-coated hydrogenated microcrystalline Si (&#181;c-Si:H) surface to afford ordered Ag nanodisk structures. It was confirmed that the resulting Ag nanodisk-incorporated &#181;c-Si:H solar cells show higher performances compared to a cell without the transfer-printed Ag nanodisks, thanks to plasmonic light trapping effect derived from the Ag nanodisks. Because of the simplicity and versatility, further device application would also be feasible thorough this approach.

A viable transfer printing-based methodology to introduce plasmonic metal nanostructures in solar cells is described. Using nanopillar poly(dimethylsiloxane) stamps, an Ag-based ordered nanodisk array was integrated with standard hydrogenated microcrystalline Si solar cells, which led to improved device performances due to plasmonic light trapping.

Transfer Baskı ile Hidrojene Mikrokristal Silikon Güneş Pilleri Işık Yakalama Gümüş Nanoyapıların Entegrasyonu

One of the potential applications of metal nanostructures is light trapping in solar cells, where unique optical properties of nanosized metals, commonly ...

Iridium Oxide-reduced Graphene Oxide Nanohybrid Thin Film Modified Screen-printed Electrodes as Disposable Electrochemical Paper Microfluidic pH Sensors

A facile, controllable, inexpensive and green electrochemical synthesis of IrO2-graphene nanohybrid thin films is developed to fabricate an easy-to-use integrated paper microfluidic electrochemical pH sensor for resource-limited settings. Taking advantages from both pH meters and strips, the pH sensing platform is composed of hydrophobic barrier-patterned paper micropad (&#181;PAD) using polydimethylsiloxane (PDMS), screen-printed electrode (SPE) modified with IrO2-graphene films and molded acrylonitrile butadiene styrene (ABS) plastic holder. Repetitive cathodic potential cycling was employed for graphene oxide (GO) reduction which can completely remove electrochemically unstable oxygenated groups and generate a 2D defect-free homogeneous graphene thin film with excellent stability and electronic properties. A uniform and smooth IrO2 film in nanoscale grain size is anodically electrodeposited onto the graphene film, without any observable cracks. The resulting IrO2-RGO electrode showed slightly super-Nernstian responses from pH 2-12 in Britton-Robinson (B-R) buffers with good linearity, small hysteresis, low response time and reproducibility in different buffers, as well as low sensitivities to different interfering ionic species and dissolved oxygen. A simple portable digital pH meter is fabricated, whose signal is measured with a multimeter, using high input-impedance operational amplifier and consumer batteries. The pH values measured with the portable electrochemical paper-microfluidic pH sensors were consistent with those measured using a commercial laboratory pH meter with a glass electrode.

The study demonstrates the growth of iridium oxide-reduced graphene oxide (IrO2-RGO) nanohybrid thin films on irregular and rough screen-printed carbon substrate through a green electrochemical synthesis, and their implementation as a pH sensor with a patterned paper-fluidic platform.

Tek Elektrokimyasal Kağıt mikroakışkan pH Sensörler olarak iridyum Oksit azaltılmış Grafen Oksit nanohibrit İnce Film Modifiye Ekran baskılı Elektrotlar

A facile, controllable, inexpensive and green electrochemical synthesis of IrO2-graphene nanohybrid thin films is developed to fabricate an easy-to-use ...

Digital Printing of Titanium Dioxide for Dye Sensitized Solar Cells

Silicon solar cell manufacturing is an expensive and high energy consuming process. In contrast, dye sensitized solar cell production is less environmentally damaging with lower processing temperatures presenting a viable and low cost alternative to conventional production. This paper further enhances these environmental credentials by evaluating the digital printing and therefore additive production route for these cells. This is achieved here by investigating the formation and performance of a metal oxide photoelectrode using nanoparticle sized titanium dioxide. An ink-jettable material was formulated, characterized and printed with a piezoelectric inkjet head to produce a 2.6 &#181;m thick layer. The resultant printed layer was fabricated into a functioning cell with an active area of 0.25 cm2 and a power conversion efficiency of 3.5%. The binder-free formulation resulted in a reduced processing temperature of 250 &#176;C, compatible with flexible polyamide substrates which are stable up to temperatures of 350 &#730;C. The authors are continuing to develop this process route by investigating inkjet printing of other layers within dye sensitized solar cells.

This paper investigates the suitability of inkjet printing for the manufacturing of dye-sensitized solar cells. A binder-free TiO2 nanoparticle ink was formulated and printed onto a FTO glass substrate. The printed layer was fabricated into a cell with an active area of 0.25 cm2 and an efficiency of 3.5%.

Boya duyarlı güneş pilleri için Titanyum Dioksit Dijital Baskı

Silicon solar cell manufacturing is an expensive and high energy consuming process. In contrast, dye sensitized solar cell production is less ...

Recombination Dynamics in Thin-film Photovoltaic Materials via Time-resolved Microwave Conductivity

A method for investigating recombination dynamics of photo-induced charge carriers in thin film semiconductors, specifically in photovoltaic materials such as organo-lead halide perovskites is presented. The perovskite film thickness and absorption coefficient are initially characterized by profilometry and UV-VIS absorption spectroscopy. Calibration of both laser power and cavity sensitivity is described in detail. A protocol for performing Flash-photolysis Time Resolved Microwave Conductivity (TRMC) experiments, a non-contact method of determining the conductivity of a material, is presented. A process for identifying the real and imaginary components of the complex conductivity by performing TRMC as a function of microwave frequency is given. Charge carrier dynamics are determined under different excitation regimes (including both power and wavelength). Techniques for distinguishing between direct and trap-mediated decay processes are presented and discussed. Results are modelled and interpreted with reference to a general kinetic model of photoinduced charge carriers in a semiconductor. The techniques described are applicable to a wide range of optoelectronic materials, including organic and inorganic photovoltaic materials, nanoparticles, and conducting/semiconducting thin films.

A Time Resolved Microwave Conductivity technique for investigating direct and trap-mediated recombination dynamics and determining carrier mobilities of thin film semiconductors is presented here.

Zaman çözülmesi Mikrodalga İletkenlik aracılığıyla İnce film Fotovoltaik Malzemeler rekombinasyon Dinamikleri

A method for investigating recombination dynamics of photo-induced charge carriers in thin film semiconductors, specifically in photovoltaic materials ...

Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells

Here, we demonstrate the incorporation of monovalent cation additives into CH3NH3PbI3 perovskite in order to adjust the optical, excitonic, and electrical properties. The possibility of doping was investigated by adding monovalent cation halides with similar ionic radii to Pb2+, including Cu+, Na+, and Ag+. A shift in the Fermi level and a remarkable decrease of sub-bandgap optical absorption, along with a lower energetic disorder in the perovskite, was achieved. An order-of-magnitude enhancement in the bulk hole mobility and a significant reduction of transport activation energy within an additive-based perovskite device was attained. The confluence of the aforementioned improved properties in the presence of these cations led to an enhancement in the photovoltaic parameters of the perovskite solar cell. An increase of 70 mV in open circuit voltage for AgI and a 2 mA/cm2 improvement in photocurrent density for NaI- and CuBr-based solar cells were achieved compared to the pristine device. Our work paves the way for further improvements in the optoelectronic quality of CH3NH3PbI3 perovskite and subsequent devices. It highlights a new avenue for investigations on the role of dopant impurities in crystallization and controls the electronic defect density in perovskite structures.

Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells

Here, we present a protocol to adjust the properties of solution-processed CH3NH3PbI3 through the incorporation of monovalent cation additives in order to achieve highly efficient perovskite solar cells.

CH tek değerlikli katyon doping<sub&gt; 3</sub&gt; NH<sub&gt; 3</sub&gt; PBI<sub&gt; 3</sub&gt; Verimli Perovskit Güneş Pilleri için

Here, we demonstrate the incorporation of monovalent cation additives into CH3NH3PbI3 perovskite in order to adjust the optical, excitonic, and electrical ...

Electrospinning of Photocatalytic Electrodes for Dye-sensitized Solar Cells

This work demonstrates a protocol to fabricate a fiber-based photoanode for dye-sensitized solar cells, consisting of a light-scattering layer made of electrospun titanium dioxide nanofibers (TiO2-NFs) on top of a blocking layer made of commercially available titanium dioxide nanoparticles (TiO2-NPs). This is achieved by first electrospinning a solution of titanium (IV) butoxide, polyvinylpyrrolidone (PVP), and glacial acetic acid in ethanol to obtain composite PVP/TiO2 nanofibers. These are then calcined at 500 &#176;C to remove the PVP and to obtain pure anatase-phase titania nanofibers. This material is characterized using scanning electron microscopy (SEM) and powder X-ray diffraction (XRD). The photoanode is prepared by first creating a blocking layer through the deposition of a TiO2-NPs/terpineol slurry on a fluorine-doped tin oxide (FTO) glass slide using doctor blading techniques. A subsequent thermal treatment is performed at 500 &#176;C. Then, the light-scattering layer is formed by depositing a TiO2-NFs/terpineol slurry on the same slide, using the same technique, and calcinating again at 500 &#176;C. The performance of the photoanode is tested by fabricating a dye-sensitized solar cell and measuring its efficiency through J-V curves under a range of incident light densities, from 0.25-1 Sun.

The overall goal of this project was to use electrospinning to fabricate a photoanode with improved performance for dye-sensitized solar cells.

Boya Duyarlılaştırılmış Güneş Pilleri için Fotokatalitik Elektrotların Elektrospinning

This work demonstrates a protocol to fabricate a fiber-based photoanode for dye-sensitized solar cells, consisting of a light-scattering layer made of ...

In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for Cu(In,Ga)Se2 Solar Cells

The levelized cost of electricity (LCOE) of photovoltaic (PV) systems is determined by, among other factors, the PV module reliability. Better prediction of degradation mechanisms and prevention of module field failure can consequently decrease investment risks as well as increase the electricity yield. An improved knowledge level can for these reasons significantly decrease the total costs of PV electricity. 
In order to better understand and minimize the degradation of PV modules, the occurring degradation mechanisms and conditions should be identified. This should preferably happen under combined stresses, since modules in the field are also simultaneously exposed to multiple stress factors. Therefore, two 'Combined Stress test with in situ measurement' setups have been designed and constructed. These setups allow the simultaneous use of humidity, temperature, illumination, and electrical biases as independently controlled stress factors on solar cells and minimodules. The setups also allow real-time monitoring of the electrical properties of these samples. This protocol presents these setups and describes the experimental possibilities. Moreover, results obtained with these setups are also presented: various examples about the influence of both deposition and degradation conditions on the stability of thin film Cu(In,Ga)Se2 (CIGS) as well as Cu2ZnSnSe4 (CZTS) solar cells are described. Results on the temperature dependency of CIGS solar cells are also presented.

In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for CuIn,GaSe2 Solar Cells

Two &#39;Combined Stress test with in situ measurement&#39; setups, which allow real-time monitoring of accelerated degradation of solar cells and modules, were designed and constructed. These setups allow the simultaneous use of humidity, temperature, electrical biases, and illumination as independently controlled stress factors. The setups and various experiments executed are presented.

Situ Güneş hücreleri ve modüllerin hızlandırılmış performans düşüşü izleme: Cu (In, Ga) Se2 güneş hücreleri için bir örnek çalışma

The levelized cost of electricity (LCOE) of photovoltaic (PV) systems is determined by, among other factors, the PV module reliability. Better prediction ...

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Here, we present a procedure for the synthesis of bulk and thin film multicomponent (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O (Co variant) and (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)CuxZn0.25(1-x))O (Cu variant) entropy-stabilized oxides. Phase pure and chemically homogeneous (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O (x = 0.20, 0.27, 0.33) and (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)CuxZn0.25(1-x))O (x = 0.11, 0.27) ceramic pellets are synthesized and used in the deposition of ultra-high quality, phase pure, single crystalline thin films of the target stoichiometry. A detailed methodology for the deposition of smooth, chemically homogeneous, entropy-stabilized oxide thin films by pulsed laser deposition on (001)-oriented MgO substrates is described. The phase and crystallinity of bulk and thin film materials are confirmed using X-ray diffraction. Composition and chemical homogeneity are confirmed by X-ray photoelectron spectroscopy and energy dispersive X-ray spectroscopy. The surface topography of thin films is measured with scanning probe microscopy. The synthesis of high quality, single crystalline, entropy-stabilized oxide thin films enables the study of interface, size, strain, and disorder effects on the properties in this new class of highly disordered oxide materials.

The synthesis of high quality bulk and thin film (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O and (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)CuxZn0.25(1-x))O entropy-stabilized oxides is presented.

Toplu ve bileşimsel varyant entropi stabilize oksit ince Film sentezi

Here, we present a procedure for the synthesis of bulk and thin film multicomponent (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O (Co variant) and ...