The authors thank New Energy and Industrial Technology Development Organization (NEDO) under Ministry of Economy, Trade, and Industry (METI), Japan, for the financial support.

PDMS Pullar 1. Hazırlık <ol><li> Politetrafloroetilen (PTFE) kap: a nanohole kalıp (50 mm x 50 mm nanoimprinted siklo olefin polimer plastik film, boyutu). </li><li> Ve 2,4 (tek kullanımlık polipropilen uçlu bir dijital mikro pipet kullanarak, 6 ul) tek kullanımlık bir cam şişe vinylmethylsiloxane-dimetilsiloksan kopolimeri (50 mm x 50 mm kalıp 0.76 g) tartılır ve Pt-diviniltetrametildisilokzandır kompleksi ile karıştırarak, (tek kullanımlık bir polipropilen ucu ile bir dijital mikro pipet kullanılarak 24 ul), 6,8-tetramethyltetra-vinylcyclotetrasiloxane. </li><li> (0.24 ml tek kullanımlık polipropilen uçlu bir dijital mikro pipet kullanarak) metilhidrojensiloksan-dimetilsiloksan kopolimer ekle cam şişe ve hızlı bir şekilde atılabilir cam pipet kullanarak karıştırın. PTFE kap içinde belirlenen kalıp yüzeyi N2 tarafından üflenir sonra, kalıp üzerine ortaya çıkan karışımın (&quot;sert&quot; PDMS prepolimer) dökün ve spin-ceket başlangıç40 saniye boyunca 1000 rpm&#39;de ing ~ 40 mikron katman kalınlığı elde etmek. </li><li> 30 dakika kısa bir süre çapraz bağ sabit PDMS için 65 ° C &#39;de ısıtılmış bir sıcak oda spin kaplı örnek yerleştirin. </li><li> Isıtma sırasında, silikon (6 g) tartın ve bir kullanılıp atılabilir bir cam şişeye katalizörü (0.6 g) ile karıştırılır. Bir vakum kurutucu içinde, cam bir şişe yerleştirin ve silikon karışımı (&quot;yumuşak&quot; PDMS ön-polimer) sıkışıp havayı çıkarmak için 15 dakika boyunca vakum (~ 133 Pa) uygulanır. </li><li> Sırasıyla ısıtma odasına ve vakum desikatörde, kalıp ve yumuşak PDMS prepolimer dışarı atın ve hızlı bir şekilde ısıtılmış kalıp üzerine prepolimer yumuşak PDMS dökün. Yumuşak PDMS tabakasının kalınlığı ~ 3 mm&#39;dir. </li><li> En az 1 saat boyunca ~ 133 Pa Daha fazla gazdan arındırmadan tekrar vakum eksikatörü içinde elde edilen örnek yerleştirin. </li><li> Isıtma odasına gazı alınmış örnek aktarın ve 80 ° C (~ 3 ° C / dk ısıtma oranı) kadar kademeli olarak ısıtılması başlar. 5 saat boyunca bu sıcaklık tutunSert ve yumuşak PDMS tamamen çapraz bağlantı. </li><li> RT aşağı örneği soğutulduktan sonra PDMS kalıp dikkatlice damga soyulabilir. Gerekiyorsa, ikinci (veya daha fazla) pul hazırlamak için kalıp yeniden. Not: Aynı kalıp damgası kalitesi bozulma olmadan en az beş kez kullanılabilir. </li><li> Bir bıçak kullanarak istenilen ölçülerde parçaları (güneş hücreleri için genellikle 7 mm x 7 mm) içine çıkan nanopillar damgası (çift katmanlı yumuşak / sert PDMS kompozit) 27 Kesme ve kullanıma kadar hava altında saklayın. </li></ol> Blok Kopolimer Çözümleri 2. Hazırlık <ol><li> (PS-b -P2VP / o -xylene) bir cam şişe içinde polistiren bloğu -poli-2-vinilpiridin (PS-b -P2VP) tozunun tartılır ve 3 mg / ml oranında o -xylene ile karıştırarak . </li><li> 1 saat süre ile 70 ° C &#39;de, bir PTFE kaplı manyetik bir karıştırma çubuğu ile karıştırın. </li><li> Karıştırın RT&#39;de fazla 24 saat boyunca elde edilen çözelti, tutunHalka kendi kendini monte misellerin oluşumu tamamlanır. Sıkıca çözüm mühür ve ortam koşullarında saklayın. Not: çözümün kalitesi bile bir yıl hazırlandıktan sonra değişmez. </li></ol> Μ c-Si 3. Hazırlanması: H Malzameler <ol><li> F (ifade cam / SnO 2: F, aşağıda) Yıkama camlar SNO 2 ile kaplanmış bir ultrasonik banyo kullanılarak oda sıcaklığında H2O (500 mi) ile, deterjan (500 mi) ve H2O (500 mi) (15 her dakika). N 2 üfleme onları kurutun. </li><li> Temizlenmiş cam yükleyin / SnO 2: bir alt tabaka tutucu ve mevduat ZnO F yüzeyler: Ga (20 nm) Tablo 2&#39;de belirtilen şartlara sahip bir doğru akım (DC) püskürtme sistemini kullanarak. </li><li> Cam yükleyin / SnO 2: F / ZnO: plazma gelişmiş kimyasal kullanılarak H p (10 nm) i (500 nm) ve n (40 nm) katmanları: Başka Yüzey tutucu ve mevduat μ c-Si Ga yüzeyler Vapor biriktirme Tablo 2&#39;de belirtilen şartlara (PECVD) sistemi. </li><li> Ortaya çıkan μ c-Si Mağaza: H (cam / SnO 2: F / ZnO: Ga / μ c-Si: H p - i - n) transferi yazdırma adıma kadar vakum ya da N2 altında yüzeyler. </li></ol> PDMS Pullar 4. Ag-kaplama <ol><li> N 2 üfleyerek EtOH (aşama 1 &#39;de hazırlandı) PDMS pulları (30 mi) 15 dakika boyunca bir ultrason banyosu kullanılarak, kuru yıkayın. </li><li> Biriktirme oranı = 5-10 Å / sn, basınç: bir elektron demeti aşağıdaki koşullar ile (EB) buharlaşma sistemi kullanarak bir Ag filmi (10-80 nm) çift taraflı yapışkan bant kullanarak bir numune tutucu temizlenmelidir PDMS pulları yükleyin ve mevduat = ~ 1.5 × 10 -4 Pa. </li><li> EB buharlaşma sistemi Ag kaplı pulları dışarı atın ve aşağıdaki transfer baskı adımda hemen kullanabilirsiniz. </li></ol> Ince üzerine Ag Nanodisks 5. Transfer BaskıFilm Si Yüzeyler <ol><li> 5.000 (atılabilir bir polipropilen ucu ile bir dijital mikro pipet kullanılarak, 50 mm x 50 mm numune için 0.3 ml) Si PS-b -P2VP çözeltisi vakum ya da N 2 ve spin-kat altında saklanan alt-tabakalar ince bir film çıkarın 40 sn için rpm. </li><li> EtOH bir dijital mikro pipet (5 mikron / hücre alanı) kullanarak ps b -P2VP kaplı yüzeyi ıslatın ve Ag-kaplı PDMS EtOH ıslak yüzeye hafifçe damga geçerlidir. Damgayı basmayın. </li><li> Bir vakum odasında damgasıyla ince film Si substrat yerleştirin ve uygulamak vakum (~ 133 Pa). </li><li> 5 dakika sonra, hava ile vakum odasını doldurmak ve ince-film Si substrat çıkar. </li><li> Ag nanodisks baskı aktarmak için cımbız ile pulu iki tarafında tutarak ince film Si substrattan damga çıkarın. Not: Eğer başarılı olursa, damgalama iz yeşilimsi bir nokta olarak görülebilir. </li><li> Et sürekli bir akış ile transfer baskılı ince film Si substrat durulayınOH N 2 esen 15 sn (~ 30 mi) ve kuru için. </li><li> Bir Ar plazma sistemini kullanarak PS-b-P2VP kaplama çıkarın. <ol><li> Ar plazma sisteminin proses odasına transfer baskılı ince film Si substrat yerleştirin. </li><li> ~ 5 dk (basınç ~ 20 Pa) için işlem odasındaki havayı dışarı pompalamak. </li><li> Ar gaz hattının vanasını açın ve manuel 4 sccm&#39;lik akış hızını ayarlamak. 40 Pa basıncı stabilize etmek üzere 5 ~ için minimum bekleyin. </li><li> 108 saniye boyunca Ar plazması oluşturmak. </li><li> Plazma temizlenmiş, transfer baskılı ince film Si yüzeylerde almaya işlem odasına hava, Ar gaz hattının vanasını kapatın pompalama durdurmak ve doldurun. </li></ol></li></ol> İnce film Si Güneş Pili Fabrikasyon 6. Tamamlama <ol><li> Si poliimid bantlar kullanarak Ar plazma tedaviden sonra yüzeylerde transfer baskılı ince film metal maskeleri takın. </li><li> DC püskürtme sistemi ve deposi bir alt tabaka tutucu maskeli tabakaları yüklemekt ZnO: Ga (100 nm), Ag (250 nm), ve ZnO: Ga Tablo 2&#39;deki koşullar (40 nm) sırasıyla. </li><li> Yüzeylerde metal maskeleri çıkarın ve maskeli ince film Si katmanları kaldırmak (yani ZnO alanı: Ga ve Ag yatırılan değil) reaktif iyon aşındırma (RIE) sistemini kullanarak. <ol><li> RIE sisteminde bir işlem odasında numuneler. </li><li> Üreticinin talimatlarına aşağıdaki işlem odasındaki havayı dışarı pompalamak. </li><li> SF 6 / O 2 debisi = 100/20 sccm, basınç = 20 Pa, gücü 100 W, süresi = 1 dak 20 sn: Üreticinin talimatı takip aşağıdaki gibi işlem koşullarını ayarlayın. </li><li> SF 6 ve O 2 gaz hatlarını açın basıncı stabilize ve plazma oluşturmak. </li><li> Numune almaya işlem odasına N 2, SF 6 ve O 2 gaz hattının vanasını kapatın pompalama durdurmak ve doldurun. </li></ol></li><li> KoyBir vakum tavlama odası içinde örnekler ve vakum içinde (~ 133 Pa) altında 175 ° C &#39;ye kadar yavaş yavaş ısıtılması başlar. 2 saat boyunca bu sıcaklık tutun ve daha sonra oda sıcaklığına soğumaya bırakın. Odasında havayı doldurun ve şimdi hücreler denebilecek örnekleri çıkar. </li><li> Ön şeffaf elektrot üzerinde Lehim Sn-Zn-bazlı alaşım (cam / SnO 2: F / ZnO: Ga, RIE tedavisi ile maruz kısım) ultrasonik lehim cihazı kullanılarak. </li></ol> Dış Kuantum Verimliliği 7. ölçümü (EQE) <ol><li> Poliimid bant kullanarak bir fabrikasyon hücreye bir ışık koruyucu maske takın ve hücre tutucu maskeli hücreyi ayarlayın. (-) Ga elektrot: önden lehimli elektrodun (+) ve Ag / ZnO için sondaları bağlayın. </li><li> Bir dalga boyu aralığındaki sırasıyla 300-1,100 nm ile 5, aşama ile, üretici talimatlarına göre bir EQE ölçülendirme sistemi EQE spektrumları ölçün. </li></ol> Fotovoltaik Akım-Gerilim (OG) 8. Ölçüm Karakteristics <ol><li> Amorf bir Si referans hücresi kullanılarak bir JV özellikleri ölçüm sisteminin ışık yoğunluğunu ayarlayın. <ol><li> JV özellikleri ölçüm sisteminin hücre sahibine amorf Si referans hücresini ayarlayın ve ışık yanar. </li><li> JV özellikleri ölçüm sistemindeki donatılmış bir dijital avometre ile foto jenere akımı okuyun. Foto jenere akım referansı hücresine (8.34 mA / cm 2) doğru değerini gösterir kadar ışık yoğunluğunu ayarlayın. </li></ol></li><li> Bir hücreye bir ışık koruyucu maske takın ve hücre tutucu maskeli hücreyi ayarlayın. (-) Ga elektrot: önden lehimli elektrodun (+) ve Ag / ZnO için sondaları bağlayın. </li><li> Hücrenin üzerinde kalibre ışık (100 mW / cm 2, 1 güneş) Aydınlatmak ve 0.02 V gerilim adım üreticinin talimatlarına JV özellikler ölçüm sistemini kullanarak foto jenere akımları ölçmek </li></ol>

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Rep. 3, 2874-1-6 (2013).</li><li>Delamarche, E., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Microcontact+Printing+Using+Poly(dimethylsiloxane)+Stamps+Hydrophilized+by+Poly(ethylene+oxide)+Silanes.">Microcontact Printing Using Poly(dimethylsiloxane) Stamps Hydrophilized by Poly(ethylene oxide) Silanes.</a> Langmuir. 19, 8749-8758 (2003).</li><li>Mizuno, H., Sai, H., Matsubara, K., Kondo, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Plasmonic+Light+Trapping+in+Amorphous+Si+Solar+Cells+Using+Periodic+Ag+Nanodisk+Structures.">Plasmonic Light Trapping in Amorphous Si Solar Cells Using Periodic Ag Nanodisk Structures.</a> MRS Proc. , 1627-1613 (2014).</li></ol>

The authors have nothing to disclose.

Bu yazıda, bir çift katmanlı sert / yumuşak PDMS kompozit malzemeler damga olarak istihdam edildi. 27 Bu kombinasyon kesin çapı altıgen yakın dolu yuvarlak delikli bir dizi oldu kalıp, ebeveyn nano yapısını çoğaltmak için gerekli olduğu tespit edildi 230 nm, 500 nm derinliği ve 460 nm delik merkez-merkez aralığında bir. Sadece yumuşak PDMS kullanıldığında, damga her zaman kötü nanoyapılı yüzeyde sonuçlandı (örneğin, ters ayağı yapısında keskin kenar) düşük olması nede...

Teknolojik alanda geniş bir fonksiyonel nano uygulama için uzun süredir bir talep vardır. Bu eğilimin beklentilerden biri geliştirilmiş ya da yenilikçi performanslar giden cihazı mimarilerinin yeni tasarım açmaktır. Güneş pillerinin alanında, örneğin metal nano kullanımının etkin dolayı ilginç optik (yani plasmonik) özellikleri, etkili ışık yakalama sistemlerini inşa etmek 1 potansiyel olarak yararlı bir araştırılmaktadır. 2,3 Gerçekten de, bazı teorik çalışmalar 4 -6 gibi plasmonik ışık yakalama güneş hücreleri ile istenen metal nano entegre stratejiler geliştirmek, konvansiyonel ışın optiği (tekstüre) Sonuç olarak ışık yakalama sınırı. 7 tabanlı aşan etkileri elde edebiliriz ileri sürmüşlerdir bu gerçekleştirmek için giderek daha önemli hale gelmiştir teorik tahminler. Çok sayıda strateji vardırBu şartları karşılamak için önerilmiştir. 8-24 Bu, örneğin, basit (düşük) metal filmlerle 8,9 ya da önceden sentezlenmiş metal nanopartiküller dispersiyon termal tavlama için 10,11, her ikisi de başarılı gösteriler sonuçlandı içerir plasmonik ışık yakalama. Ancak, bu yaklaşımların tarafından fabrikasyon metal nanoyapılar genellikle teorik modellere maç zorlu olduğunu işaret edilmelidir. Buna karşılık, böyle bir fotolitografi ve elektron demeti litografi gibi yarı iletken sektörlerinde geleneksel nanofabrikasyon teknikleri, 12,13 de alt 100 nm seviyesinin altında yapılar kontrol edebilirsiniz, ancak genellikle çok pahalı ve olan güneş hücreleri uygulamak için zaman alıcı, düşük maliyet ile burada büyük alanlı yeteneği şarttır. Düşük maliyetli, yüksek verim ve nano ölçekli kontrol edilebilirlik ile geniş alan gereksinimleri gibi nanoimprint litografi, 14-16 yumuşak litografi, 17,18 gibi yöntemler yerine getirmek için </sup&gt; Nanokürecikli litografi, 19-21 ve delik maskesi kolloidal litografi 22-24 umut verici olurdu. Bu seçenekler arasında, biz yumuşak litografik, gelişmiş transfer baskı tekniği geliştirdik. 25 bir nanoyapılı poli (dimetilsiloksan) (PDMS) pulları ve blok kopolimer bazlı yapıştırıcı katmanları kullanarak sipariş metal nano desen kolayca teknolojik bir dizi sağlanabilir güneş pilleri için olanlar dahil olmak üzere ilgili maddeler. Bu yazının amacı, güneş pili yapılarının mevcut etkili ışık yakalama plasmonik nano dahil bizim transfer baskı yaklaşımının detaylı prosedürü tarif etmektir. Metal ve güneş hücreleri için diğer tipleri bu yaklaşım ile uyumlu olan, ancak güneş hücreleri bu çalışmada seçilmiştir (Şekil 1), 26: demonstrasyon bir durum olarak, Ag nanodisks ve ince-film mikrokristalin Si (lH uc-Si) hidrojenlendi. Birlikte onun süreci ilebasitlik, yaklaşma cihazları ile fonksiyonel metal nano entegre kullanışlı bir araç gibi çeşitli araştırmacıların ilgi olacaktır.

<table border="0" cellpadding="0" cellspacing="0" style="width:864px;" width="863">
	<colgroup>
		<col />
		<col />
		<col />
		<col />
	</colgroup>
	<tbody>
		<tr height="42">
			<td height="42" style="height:42px;width:216px;">Nanohole mold</td>
			<td style="width:200px;">Scivax 
			http://www.scivax.com</td>
			<td style="width:129px;">FLH230/500-120</td>
			<td style="width:319px;"></td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:216px;">PTFE container</td>
			<td style="width:200px;">Eishin 
			http://www.colbyeishin.com</td>
			<td style="width:129px;">n/a</td>
			<td style="width:319px;">Custom made</td>
		</tr>
		<tr height="21">
			<td height="63" rowspan="3" style="height:63px;width:216px;">Hard-PDMS materials</td>
			<td rowspan="3" style="width:200px;">Gelest 
			http://www.gelest.com/gelest/forms/Home/home.aspx</td>
			<td style="width:129px;">VDT-731</td>
			<td>Vinylmethylsiloxane-dimethylsiloxane copolymer</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:129px;">SIP6831.1</td>
			<td>Pt-divinyltetramethyldisiloxane complex</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:129px;">HMS-301</td>
			<td>Methylhydrosiloxane-dimethylsiloxane copolymer</td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">2,4,6,8-tetramethyltetra-vinylcyclotetrasiloxane</td>
			<td style="width:200px;">Sigma-Aldrich 
			http://www.sigmaaldrich.com</td>
			<td style="width:129px;">396281</td>
			<td>Additive for hard-PDMS</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:216px;">Soft-PDMS materials</td>
			<td style="width:200px;">Dow Corning 
			http://www.dowcorning.com</td>
			<td style="width:129px;">Sylgard-184</td>
			<td>Silicone precursor</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;">PS-b-P2VP</td>
			<td style="width:200px;">Polymer Source 
			http://polymersource.com</td>
			<td style="width:129px;">P5742-S2VP</td>
			<td>Mn &#215; 103 = 133-b-132</td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">Glass/SnO2:F substrates</td>
			<td style="width:200px;">Asahi Glass Co. Ltd. 
			http://www.agc.com/english/company</td>
			<td style="width:129px;">Type VU</td>
			<td style="width:319px;">Chemical mechanical polished by D-process Inc. (http://d-process.jp/index.html) to flatten the surfaces</td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">Detergent</td>
			<td style="width:200px;">Fruuchi Chemical Co. 
			http://www.furuchi.co.jp/eng/main.htm</td>
			<td style="width:129px;">Semico-clean 56</td>
			<td style="width:319px;">Used for the cleaning of Glass/SnO2:F substrates</td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">ZnO:Ga supputtering target</td>
			<td style="width:200px;">AGC Ceramics Co. Ltd. 
			http://www.agcc.jp/2005/en/index.html</td>
			<td style="width:129px;">5.7GZO</td>
			<td></td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">Ag supputtering target</td>
			<td style="width:200px;">Mitsubishi Materials Co. 
			http://www.mitsubishicarbide.com/mmc/en/index.html</td>
			<td style="width:129px;">4NAg</td>
			<td></td>
		</tr>
		<tr height="84">
			<td height="84" style="height:84px;width:216px;">Double-sided adhesive tape</td>
			<td style="width:200px;">Nisshin EM Co. 
			http://nisshin-em.co.jp/information/carbontape.html</td>
			<td style="width:129px;">732</td>
			<td></td>
		</tr>
		<tr height="120">
			<td height="120" style="height:120px;width:216px;">Polyimide tape</td>
			<td style="width:200px;">Dupont 
			http://www.dupont.com/products-and-services/membranes-films/polyimide-films/brands/kapton-polyimide-film.html</td>
			<td style="width:129px;">Kapton 650S#25</td>
			<td></td>
		</tr>
		<tr height="84">
			<td height="84" style="height:84px;width:216px;">Sn-Zn-based Solder</td>
			<td style="width:200px;">Kuroda Techno Co., Ltd. 
			http://www.kuroda-techno.com/english/index.html</td>
			<td style="width:129px;">Cerasolzer AL-200</td>
			<td></td>
		</tr>
		<tr height="84">
			<td height="84" style="height:84px;width:216px;">Digital micro pipette</td>
			<td style="width:200px;">Nichiryo 
			http://www.nichiryo.co.jp/en/product/pipette/ex/index.html</td>
			<td style="width:129px;">00-NPX2-20 
			00-NPX2-200 
			00-NPX2-1000</td>
			<td></td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">Heating chamber</td>
			<td style="width:200px;">Tokyo Rikakikai Co., Ltd. 
			http://www.eyelaworld.com/product_view.php?id=120</td>
			<td style="width:129px;">VOS-201SD</td>
			<td></td>
		</tr>
		<tr height="84">
			<td height="126" rowspan="2" style="height:126px;width:216px;">Electron beam evaporator 
			(two types)</td>
			<td style="width:200px;">Canon-Anelva 
			https://www.canon-anelva.co.jp/english/index.html</td>
			<td style="width:129px;">n/a</td>
			<td style="width:319px;">Custom made</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:200px;">Arios 
			http://arios.com/</td>
			<td style="width:129px;">n/a</td>
			<td>Custom made</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:216px;">Sputtering system</td>
			<td style="width:200px;">Ulvac 
			http://www.ulvac.co.jp/en</td>
			<td style="width:129px;">SBR-2306</td>
			<td style="width:319px;"></td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">PECVD system&#160;</td>
			<td style="width:200px;">Shimadzu Emit Co. Ltd. 
			http://www.shimadzu.co.jp/emit/en/</td>
			<td style="width:129px;">SLCM-13</td>
			<td style="width:319px;"></td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">Ar plasma system&#160;</td>
			<td style="width:200px;">Diner Electric Gmbh 
			http://www.plasma.de/index.html</td>
			<td style="width:129px;">Femto&#160;</td>
			<td></td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:216px;">RIE system</td>
			<td style="width:200px;">Samco Inc. 
			http://www.samcointl.com</td>
			<td style="width:129px;">RIE-10NR</td>
			<td></td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">Ultrasonic soldering device</td>
			<td style="width:200px;">Colby-Eishin Enterprises, Inc. 
			http://www.colbyeishin.com/sub_sunbonder.htm</td>
			<td style="width:129px;">SUNBONDER</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">EQE measurement system</td>
			<td rowspan="3" style="width:200px;">Bunkoukeiki Co. Ltd. 
			http://www.bunkoukeiki.co.jp/</td>
			<td style="width:129px;">CEP-25BXS</td>
			<td></td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:216px;">J-V characteristics measurement system</td>
			<td style="width:129px;">OTENTOSUN-5S-I/V</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">Amorphous Si reference cell</td>
			<td style="width:129px;">WPVS-NPB-S1</td>
			<td>For light intensity calibration</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:216px;">Digital multi-meter</td>
			<td style="width:200px;">Keithley Instruments Inc. 
			http://www.keithley.com/</td>
			<td style="width:129px;">2400</td>
			<td></td>
		</tr>
	</tbody>
</table>

integration of light trapping silver nanostructures in hydrogenated microcrystalline silicon solar cells by transfer printing

One of the potential applications of metal nanostructures is light trapping in solar cells, where unique optical properties of nanosized metals, commonly known as plasmonic effects, play an important role. Research in this field has, however, been impeded owing to the difficulty of fabricating devices containing the desired functional metal nanostructures. In order to provide a viable strategy to this issue, we herein show a transfer printing-based approach that allows the quick and low-cost integration of designed metal nanostructures with a variety of device architectures, including solar cells. Nanopillar poly(dimethylsiloxane) (PDMS) stamps were fabricated from a commercially available nanohole plastic film as a master mold. On this nanopatterned PDMS stamps, Ag films were deposited, which were then transfer-printed onto block copolymer (binding layer)-coated hydrogenated microcrystalline Si (&#181;c-Si:H) surface to afford ordered Ag nanodisk structures. It was confirmed that the resulting Ag nanodisk-incorporated &#181;c-Si:H solar cells show higher performances compared to a cell without the transfer-printed Ag nanodisks, thanks to plasmonic light trapping effect derived from the Ag nanodisks. Because of the simplicity and versatility, further device application would also be feasible thorough this approach.

H (n katmanı): Şekil 2 uc-Si yüzeyine Ag nanodisks transfer baskı için genel işlem özetlenmektedir. Kısaca, bir Ag filmi (kalınlık: 10-80 nm), elektron ışını, buharlaştırma ile nanopillar PDMS damga yüzeyi üzerine tatbik edilir. H n tabaka: Buna paralel olarak, PS-b -P2VP çözeltisi taze hazırlanmış uc-Si yüzeyine kaplanmış bir spin. Daha sonra, bir EtOH damlacık PS-b -P2VP kaplı yüzey üzerine yerleştirilir ve Ag-tevdi PD...

Watch this Scientific Journal Video about Integration of Light Trapping Silver Nanostructures in Hydrogenated Microcrystalline Silicon Solar Cells by Transfer Printing at JoVE.com

Integration of Light Trapping Silver Nanostructures in Hydrogenated Microcrystalline Silicon Solar Cells by Transfer Printing

A viable transfer printing-based methodology to introduce plasmonic metal nanostructures in solar cells is described. Using nanopillar poly(dimethylsiloxane) stamps, an Ag-based ordered nanodisk array was integrated with standard hydrogenated microcrystalline Si solar cells, which led to improved device performances due to plasmonic light trapping.

Transfer Baskı ile Hidrojene Mikrokristal Silikon Güneş Pilleri Işık Yakalama Gümüş Nanoyapıların Entegrasyonu

One of the potential applications of metal nanostructures is light trapping in solar cells, where unique optical properties of nanosized metals, commonly ...

integration-light-trapping-silver-nanostructures-hydrogenated

Research

JoVE Journal

Engineering

7.7K Görüntüleme.  National Institute of Advanced Industrial Science and Technology, Koriyama, Fukushima, Japan. A viable transfer printing-based methodology to introduce plasmonic metal nanostructures in solar cells is described. Using nanopillar poly(dimethylsiloxane) stamps, an Ag-based ordered nanodisk array was integrated with standard hydrogenated microcrystalline Si solar cells, which led to improved device performances due to plasmonic light trapping.

Video: Integration of Light Trapping Silver Nanostructures in Hydrogenated Microcrystalline Silicon Solar Cells by Transfer Printing

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach.
The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles.
To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 &mu;m thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm2, which can be increased up to 17-18 mA/cm2 (~25% higher) after application of a simple diffuse back reflector made of a white paint.
To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23&deg;C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing conditions. An optimised nanoparticle array alone results in cell Jsc enhancement of about 28%, similar to the effect of the diffuse reflector. The photocurrent can be further increased by coating the nanoparticles by a low refractive index dielectric, like MgF2, and applying the diffused reflector. The complete plasmonic cell structure comprises the polycrystalline silicon film, a silver nanoparticle array, a layer of MgF2, and a diffuse reflector. The Jsc for such cell is 21-23 mA/cm2, up to 45% higher than Jsc of the original cell without light-trapping or ~25% higher than Jsc for the cell with the diffuse reflector only.
Introduction
Light-trapping in silicon solar cells is commonly achieved via light scattering at textured interfaces. Scattered light travels through a cell at oblique angles for a longer distance and when such angles exceed the critical angle at the cell interfaces the light is permanently trapped in the cell by total internal reflection (Animation 1: Light-trapping). Although this scheme works well for most solar cells, there are developing technologies where ultra-thin Si layers are produced planar (e.g. layer-transfer technologies and epitaxial c-Si layers) 1 and or when such layers are not compatible with textures substrates (e.g. evaporated silicon) 2. For such originally planar Si layer alternative light trapping approaches, such as diffuse white paint reflector 3, silicon plasma texturing 4 or high refractive index nanoparticle reflector 5 have been suggested.
Metal nanoparticles can effectively scatter incident light into a higher refractive index material, like silicon, due to the surface plasmon resonance effect 6. They also can be easily formed on the planar silicon cell surface thus offering a light-trapping approach alternative to texturing. For a nanoparticle located at the air-silicon interface the scattered light fraction coupled into silicon exceeds 95% and a large faction of that light is scattered at angles above critical providing nearly ideal light-trapping condition (Animation 2: Plasmons on NP). The resonance can be tuned to the wavelength region, which is most important for a particular cell material and design, by varying the nanoparticle average size, surface coverage and local dielectric environment 6,7. Theoretical design principles of plasmonic nanoparticle solar cells have been suggested 8. In practice, Ag nanoparticle array is an ideal light-trapping partner for poly-Si thin-film solar cells because most of these design principle are naturally met. The simplest way of forming nanoparticles by thermal annealing of a thin precursor Ag film results in a random array with a relatively wide size and shape distribution, which is particularly suitable for light-trapping because such an array has a wide resonance peak, covering the wavelength range of 700-900 nm, important for poly-Si solar cell performance. The nanoparticle array can only be located on the rear poly-Si cell surface thus avoiding destructive interference between incident and scattered light which occurs for front-located nanoparticles 9. Moreover, poly-Si thin-film cells do not requires a passivating layer and the flat base-shaped nanoparticles (that naturally result from thermal annealing of a metal film) can be directly placed on silicon further increases plasmonic scattering efficiency due to surface plasmon-polariton resonance 10.
The cell with the plasmonic nanoparticle array as described above can have a photocurrent about 28% higher than the original cell. However, the array still transmits a significant amount of light which escapes through the rear of the cell and does not contribute into the current. This loss can be mitigated by adding a rear reflector to allow catching transmitted light and re-directing it back to the cell. Providing sufficient distance between the reflector and the nanoparticles (a few hundred nanometers) the reflected light will then experience one more plasmonic scattering event while passing through the nanoparticle array on re-entering the cell and the reflector itself can be made diffuse - both effects further facilitating light scattering and hence light-trapping. Importantly, the Ag nanoparticles have to be encapsulated with an inert and low refractive index dielectric, like MgF2 or SiO2, from the rear reflector to avoid mechanical and chemical damage 7. Low refractive index for this cladding layer is required to maintain a high coupling fraction into silicon and larger scattering angles, which are ensured by the high optical contrast between the media on both sides of the nanoparticle, silicon and dielectric 6. The photocurrent of the plasmonic cell with the diffuse rear reflector can be up to 45% higher than the current of the original cell or up to 25% higher than the current of an equivalent cell with the diffuse reflector only.

Polycrystalline silicon thin-film solar cells on glass are fabricated by deposition of boron and phosphorous doped silicon layers followed by crystallisation, defect passivation and metallisation. Plasmonic light-trapping is introduced by forming Ag nanoparticles on the silicon cell surface capped with a diffused reflector resulting in ~45% photocurrent enhancement.

Plasmonic geliştirilmiş Işık-tutucu ile Polycrystalline Silikon İnce-film Solar hücreler

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To ...

Mühendislik

A Method to Fabricate Disconnected Silver Nanostructures in 3D

The standard nanofabrication toolkit includes techniques primarily aimed at creating 2D patterns in dielectric media. Creating metal patterns on a submicron scale requires a combination of nanofabrication tools and several material processing steps. For example, steps to create planar metal structures using ultraviolet photolithography and electron-beam lithography can include sample exposure, sample development, metal deposition, and metal liftoff. To create 3D metal structures, the sequence is repeated multiple times. The complexity and difficulty of stacking and aligning multiple layers limits practical implementations of 3D metal structuring using standard nanofabrication tools. Femtosecond-laser direct-writing has emerged as a pre-eminent technique for 3D nanofabrication.1,2 Femtosecond lasers are frequently used to create 3D patterns in polymers and glasses.3-7 However, 3D metal direct-writing remains a challenge. Here, we describe a method to fabricate silver nanostructures embedded inside a polymer matrix using a femtosecond laser centered at 800 nm. The method enables the fabrication of patterns not feasible using other techniques, such as 3D arrays of disconnected silver voxels.8 Disconnected 3D metal patterns are useful for metamaterials where unit cells are not in contact with each other,9 such as coupled metal dot10,11or coupled metal rod12,13 resonators. Potential applications include negative index metamaterials, invisibility cloaks, and perfect lenses.
In femtosecond-laser direct-writing, the laser wavelength is chosen such that photons are not linearly absorbed in the target medium. When the laser pulse duration is compressed to the femtosecond time scale and the radiation is tightly focused inside the target, the extremely high intensity induces nonlinear absorption. Multiple photons are absorbed simultaneously to cause electronic transitions that lead to material modification within the focused region. Using this approach, one can form structures in the bulk of a material rather than on its surface.
Most work on 3D direct metal writing has focused on creating self-supported metal structures.14-16 The method described here yields sub-micrometer silver structures that do not need to be self-supported because they are embedded inside a matrix. A doped polymer matrix is prepared using a mixture of silver nitrate (AgNO3), polyvinylpyrrolidone (PVP) and water (H2O). Samples are then patterned by irradiation with an 11-MHz femtosecond laser producing 50-fs pulses. During irradiation, photoreduction of silver ions is induced through nonlinear absorption, creating an aggregate of silver nanoparticles in the focal region. Using this approach we create silver patterns embedded in a doped PVP matrix. Adding 3D translation of the sample extends the patterning to three dimensions.

Femtosecond-laser direct-writing is frequently used to create three-dimensional (3D) patterns in polymers and glasses. However, patterning metals in 3D remains a challenge. We describe a method for fabricating silver nanostructures embedded inside a polymer matrix using a femtosecond laser centered at 800 nm.

3D Disconnected Gümüş Nanoyapılar Fabrikasyona için Bir Yöntem

The standard nanofabrication toolkit includes  techniques primarily aimed at creating 2D patterns in dielectric media. Creating  metal patterns on a ...

Optical Trapping of Nanoparticles

Optical trapping is a technique for immobilizing and manipulating small objects in a gentle way using light, and it has been widely applied in trapping and manipulating small biological particles. Ashkin and co-workers first demonstrated optical tweezers using a single focused beam1. The single beam trap can be described accurately using the perturbative gradient force formulation in the case of small Rayleigh regime particles1. In the perturbative regime, the optical power required for trapping a particle scales as the inverse fourth power of the particle size. High optical powers can damage dielectric particles and cause heating. For instance, trapped latex spheres of 109 nm in diameter were destroyed by a 15 mW beam in 25 sec1, which has serious implications for biological matter2,3.
A self-induced back-action (SIBA) optical trapping was proposed to trap 50 nm polystyrene spheres in the non-perturbative regime4. In a non-perturbative regime, even a small particle with little permittivity contrast to the background can influence significantly the ambient electromagnetic field and induce a large optical force. As a particle enters an illuminated aperture, light transmission increases dramatically because of dielectric loading. If the particle attempts to leave the aperture, decreased transmission causes a change in momentum outwards from the hole and, by Newton's Third Law, results in a force on the particle inwards into the hole, trapping the particle. The light transmission can be monitored; hence, the trap can become a sensor. The SIBA trapping technique can be further improved by using a double-nanohole structure.
The double-nanohole structure has been shown to give a strong local field enhancement5,6. Between the two sharp tips of the double-nanohole, a small particle can cause a large change in optical transmission, thereby inducing a large optical force. As a result, smaller nanoparticles can be trapped, such as 12 nm silicate spheres7 and 3.4 nm hydrodynamic radius bovine serum albumin proteins8. In this work, the experimental configuration used for nanoparticle trapping is outlined. First, we detail the assembly of the trapping setup which is based on a Thorlabs Optical Tweezer Kit. Next, we explain the nanofabrication procedure of the double-nanohole in a metal film, the fabrication of the microfluidic chamber and the sample preparation. Finally, we detail the data acquisition procedure and provide typical results for trapping 20 nm polystyrene nanospheres.

The following setup approach details low power optical trapping of dielectric nanoparticles using a double-nanohole in metal film.

Nanopartiküllerin Optik Yakalama

Optical trapping is a technique for immobilizing and manipulating small objects in a gentle way using light, and it has been widely applied in trapping ...

Making Record-efficiency SnS Solar Cells by Thermal Evaporation and Atomic Layer Deposition

Tin sulfide (SnS) is a candidate absorber material for Earth-abundant, non-toxic solar cells. SnS offers easy phase control and rapid growth by congruent thermal evaporation, and it absorbs visible light strongly. However, for a long time the record power conversion efficiency of SnS solar cells remained below 2%. Recently we demonstrated new certified record efficiencies of 4.36% using SnS deposited by atomic layer deposition, and 3.88% using thermal evaporation. Here the fabrication procedure for these record solar cells is described, and the statistical distribution of the fabrication process is reported. The standard deviation of efficiency measured on a single substrate is typically over 0.5%. All steps including substrate selection and cleaning, Mo sputtering for the rear contact (cathode), SnS deposition, annealing, surface passivation, Zn(O,S) buffer layer selection and deposition, transparent conductor (anode) deposition, and metallization are described. On each substrate we fabricate 11 individual devices, each with active area 0.25 cm2. Further, a system for high throughput measurements of current-voltage curves under simulated solar light, and external quantum efficiency measurement with variable light bias is described. With this system we are able to measure full data sets on all 11 devices in an automated manner and in minimal time. These results illustrate the value of studying large sample sets, rather than focusing narrowly on the highest performing devices. Large data sets help us to distinguish and remedy individual loss mechanisms affecting our devices.

Tin sulfide (SnS) is a candidate material for Earth-abundant, non-toxic solar cells. Here, we demonstrate the fabrication procedure of the SnS solar cells employing atomic layer deposition, which yields 4.36% certified power conversion efficiency, and thermal evaporation which yields 3.88%.

Termal Buharlaşma ve Atomik katman Biriktirme tarafından Record-verimlilik SNS Güneş Pilleri yapma

Tin sulfide (SnS) is a candidate absorber material for Earth-abundant, non-toxic solar cells. SnS offers easy phase control and rapid growth by congruent ...

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

A procedure to measure the bulk lifetime (&#62;100 &#181;sec) of silicon wafers by temporarily attaining a very high level of surface passivation when immersing the wafers in hydrofluoric acid (HF) is presented. By this procedure three critical steps are required to attain the bulk lifetime. Firstly, prior to immersing silicon wafers into HF, they are chemically cleaned and subsequently etched in 25% tetramethylammonium hydroxide. Secondly, the chemically treated wafers are then placed into a large plastic container filled with a mixture of HF and hydrochloric acid, and then centered over an inductive coil for photoconductance (PC) measurements. Thirdly, to inhibit surface recombination and measure the bulk lifetime, the wafers are illuminated at 0.2 suns for 1 min&#160;using a halogen lamp, the illumination is switched off, and a PC measurement is immediately taken. By this procedure, the characteristics of bulk silicon defects can be accurately determined. Furthermore, it is anticipated that a sensitive RT surface passivation technique will be imperative for examining bulk silicon defects when their concentration is low (&#60;1012 cm-3).

A RT liquid surface passivation technique to investigate the recombination activity of bulk silicon defects is described. For the technique to be successful, three critical steps are required: (i) chemical cleaning and etching of silicon, (ii) immersion of silicon in 15% hydrofluoric acid and (iii) illumination for 1 min.

Işık Geliştirilmiş Hidroflorik Asit Pasifleme: Dökme Silikon Kusurları Tespit için Hassas Tekniği

A procedure to measure the bulk lifetime (&#62;100 &#181;sec) of silicon wafers by temporarily attaining a very high level of surface passivation when ...

Printing Fabrication of Bulk Heterojunction Solar Cells and In Situ Morphology Characterization

Polymer-based materials hold promise as low-cost, flexible efficient photovoltaic devices. Most laboratory efforts to achieve high performance devices have used devices prepared by spin coating, a process that is not amenable to large-scale fabrication. This mismatch in device fabrication makes it difficult to translate quantitative results obtained in the laboratory to the commercial level, making optimization difficult. Using a mini-slot die coater, this mismatch can be resolved by translating the commercial process to the laboratory and characterizing the structure formation in the active layer of the device in real time and in situ as films are coated onto a substrate. The evolution of the morphology was characterized under different conditions, allowing us to propose a mechanism by which the structures form and grow. This mini-slot die coater offers a simple, convenient, material efficient route by which the morphology in the active layer can be optimized under industrially relevant conditions. The goal of this protocol is to show experimental details of how a solar cell device is fabricated using a mini-slot die coater and technical details of running in situ structure characterization using the mini-slot die coater.

Printing Fabrication of Bulk Heterojunction Solar Cells and In Situ Morphology Characterization

Here, we present a protocol to fabricate organic thin film solar cells using a mini-slot die coater and related in-line structure characterizations using synchrotron scattering techniques.

Toplu Heterojonksiyonlar Solar Hücre Baskı İmalatı ve<em&gt; In Situ</em&gt; Morfoloji Karakterizasyonu

Polymer-based materials hold promise as low-cost, flexible efficient photovoltaic devices. Most laboratory efforts to achieve high performance devices ...

Digital Printing of Titanium Dioxide for Dye Sensitized Solar Cells

Silicon solar cell manufacturing is an expensive and high energy consuming process. In contrast, dye sensitized solar cell production is less environmentally damaging with lower processing temperatures presenting a viable and low cost alternative to conventional production. This paper further enhances these environmental credentials by evaluating the digital printing and therefore additive production route for these cells. This is achieved here by investigating the formation and performance of a metal oxide photoelectrode using nanoparticle sized titanium dioxide. An ink-jettable material was formulated, characterized and printed with a piezoelectric inkjet head to produce a 2.6 &#181;m thick layer. The resultant printed layer was fabricated into a functioning cell with an active area of 0.25 cm2 and a power conversion efficiency of 3.5%. The binder-free formulation resulted in a reduced processing temperature of 250 &#176;C, compatible with flexible polyamide substrates which are stable up to temperatures of 350 &#730;C. The authors are continuing to develop this process route by investigating inkjet printing of other layers within dye sensitized solar cells.

This paper investigates the suitability of inkjet printing for the manufacturing of dye-sensitized solar cells. A binder-free TiO2 nanoparticle ink was formulated and printed onto a FTO glass substrate. The printed layer was fabricated into a cell with an active area of 0.25 cm2 and an efficiency of 3.5%.

Boya duyarlı güneş pilleri için Titanyum Dioksit Dijital Baskı

Silicon solar cell manufacturing is an expensive and high energy consuming process. In contrast, dye sensitized solar cell production is less ...

Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells

Here, we demonstrate the incorporation of monovalent cation additives into CH3NH3PbI3 perovskite in order to adjust the optical, excitonic, and electrical properties. The possibility of doping was investigated by adding monovalent cation halides with similar ionic radii to Pb2+, including Cu+, Na+, and Ag+. A shift in the Fermi level and a remarkable decrease of sub-bandgap optical absorption, along with a lower energetic disorder in the perovskite, was achieved. An order-of-magnitude enhancement in the bulk hole mobility and a significant reduction of transport activation energy within an additive-based perovskite device was attained. The confluence of the aforementioned improved properties in the presence of these cations led to an enhancement in the photovoltaic parameters of the perovskite solar cell. An increase of 70 mV in open circuit voltage for AgI and a 2 mA/cm2 improvement in photocurrent density for NaI- and CuBr-based solar cells were achieved compared to the pristine device. Our work paves the way for further improvements in the optoelectronic quality of CH3NH3PbI3 perovskite and subsequent devices. It highlights a new avenue for investigations on the role of dopant impurities in crystallization and controls the electronic defect density in perovskite structures.

Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells

Here, we present a protocol to adjust the properties of solution-processed CH3NH3PbI3 through the incorporation of monovalent cation additives in order to achieve highly efficient perovskite solar cells.

CH tek değerlikli katyon doping<sub&gt; 3</sub&gt; NH<sub&gt; 3</sub&gt; PBI<sub&gt; 3</sub&gt; Verimli Perovskit Güneş Pilleri için

Here, we demonstrate the incorporation of monovalent cation additives into CH3NH3PbI3 perovskite in order to adjust the optical, excitonic, and electrical ...

Challenges in Rheological Characterization of Highly Concentrated Suspensions &#8212; A Case Study for Screen-printing Silver Pastes

A comprehensive rheological characterization of highly concentrated suspensions or pastes is mandatory for a targeted product development meeting the manifold requirements during processing and application of such complex fluids. In this investigation, measuring protocols for a conclusive assessment of different process relevant rheological parameters have been evaluated. This includes the determination of yield stress, viscosity, wall slip velocity, structural recovery after large deformation and elongation at break as well as tensile force during filament stretching.
The importance of concomitant video recordings during parallel-plate rotational rheometry for a significant determination of rheological quantities is demonstrated. The deformation profile and flow field at the sample edge can be determined using appropriate markers. Thus, measurement parameter settings and plate roughness values can be identified for which yield stress and viscosity measurements are possible. Slip velocity can be measured directly and measuring conditions at which plug flow, shear banding or sample spillover occur can be identified clearly. 
Video recordings further confirm that the change in shear moduli observed during three stage oscillatory shear tests with small deformation amplitude in stage I and III but large oscillation amplitude in stage II can be directly attributed to structural break down and recovery. For the pastes investigated here, the degree of irreversible, shear-induced structural change increases with increasing deformation amplitude in stage II until a saturation is reached at deformations corresponding to the crossover of G' and G'', but the irreversible damage is independent of the duration of large amplitude shear. 
A capillary breakup elongational rheometer and a tensile tester have been used to characterize deformation and breakup behavior of highly filled pastes in uniaxial elongation. Significant differences were observed in all experiments described above for two commercial screen-printing silver pastes used for front side metallization of Si-solar cells.

A protocol for a robust and application relevant rheological characterization of highly concentrated suspensions is presented. Silver pastes used for screen-printing application in solar cell production are employed as model systems.

Son derece Konsantre Süspansiyonlarının reolojik Karakterizasyonunda Zorluklar - Ekran-baskı Gümüş Pastaları için bir Vaka Çalışması

A comprehensive rheological characterization of highly concentrated suspensions or pastes is mandatory for a targeted product development meeting the ...

In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for Cu(In,Ga)Se2 Solar Cells

The levelized cost of electricity (LCOE) of photovoltaic (PV) systems is determined by, among other factors, the PV module reliability. Better prediction of degradation mechanisms and prevention of module field failure can consequently decrease investment risks as well as increase the electricity yield. An improved knowledge level can for these reasons significantly decrease the total costs of PV electricity. 
In order to better understand and minimize the degradation of PV modules, the occurring degradation mechanisms and conditions should be identified. This should preferably happen under combined stresses, since modules in the field are also simultaneously exposed to multiple stress factors. Therefore, two 'Combined Stress test with in situ measurement' setups have been designed and constructed. These setups allow the simultaneous use of humidity, temperature, illumination, and electrical biases as independently controlled stress factors on solar cells and minimodules. The setups also allow real-time monitoring of the electrical properties of these samples. This protocol presents these setups and describes the experimental possibilities. Moreover, results obtained with these setups are also presented: various examples about the influence of both deposition and degradation conditions on the stability of thin film Cu(In,Ga)Se2 (CIGS) as well as Cu2ZnSnSe4 (CZTS) solar cells are described. Results on the temperature dependency of CIGS solar cells are also presented.

In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for CuIn,GaSe2 Solar Cells

Two &#39;Combined Stress test with in situ measurement&#39; setups, which allow real-time monitoring of accelerated degradation of solar cells and modules, were designed and constructed. These setups allow the simultaneous use of humidity, temperature, electrical biases, and illumination as independently controlled stress factors. The setups and various experiments executed are presented.

Situ Güneş hücreleri ve modüllerin hızlandırılmış performans düşüşü izleme: Cu (In, Ga) Se2 güneş hücreleri için bir örnek çalışma

The levelized cost of electricity (LCOE) of photovoltaic (PV) systems is determined by, among other factors, the PV module reliability. Better prediction ...