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DOI :
10.3791/50406-v
May 13th, 2013
Chapters
0:05
Title
1:13
Preparation of a Block for Sectioning: Self-assembled Monolayers
4:12
Sectioning to Produce Nanogap Structures
5:35
Preparation for Electrical Measurements of Self-assembled Monolayer Samples
6:00
Results: Images and Electrical Measurements for Nanogaps below 5 nm
7:15
Conclusion
电寻址,高纵横比(> 1000:1)制造金属纳米线的差距可以使用铝和银的牺牲层自组装单分子膜为模板的单纳米分离。这些纳隙结构没有一个干净的房间或任何边缘光刻称为nanoskiving的的一种形式由光或电子束光刻工艺制作。
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