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DOI :
10.3791/50581-v
November 1st, 2013
Chapters
0:05
Title
1:21
Etching of the Mesa
5:53
Fabrication of the Ohmic Contacts
8:38
Fabrication of the Titanium/Gold Schottky Leads
10:45
Fabrication of the Aluminum Gates
11:08
Fabrication of the Bonding Pads
11:54
Dicing of the Sample
12:50
Bonding
15:14
Conclusion
13:07
Results: Confirming Gate Integrity
本文提出了一个详细的制作门定义的半导体横向量子点砷化镓异质协议。这些纳米器件被用来捕获一些电子作为量子比特的量子信息处理或其他细观实验,如相干电导测量使用。
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