Name: scanning-probe single-electron capacitance spectroscopy
Uploaded: 2013-07-30T13:00:00
Description: Watch this Scientific Journal Video about Scanning-probe Single-electron Capacitance Spectroscopy at JoVE.com

这里讨论的研究由密歇根州立大学量子科学研究所和美国国家科学基金会DMR-0305461，DMR-0906939，和DMR-0605801。 KW承认生物电子学的​​跨学科教育GAANN培训计划奖学金从美国能源部的支持。

1。议定书<ol><li>显微镜和电子设备的初始设置的<ol><li>开始与相关的电子控制能够低温扫描探针显微镜。这里所描述的用于本研究的显微镜使用惯性翻译“走”的样品沿斜面13（如铜，黄铜，钢或不锈钢制成的导电材料，使它们能够发射偏置电压的从尖端朝向和远离样品）的Besocke设计，在图2中示意性地示出的STM-14的一部分。 </li><li>除了偏置电压和隧道电流的同轴电...

<ol>
	<li>Gasseller, M., DeNinno, M., Loo, R., Harrison, J. F., Caymax, M., Rogge, S., Tessmer, S. H. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Single-Electron+Capacitance+Spectroscopy+of+Individual+Dopants+in+Silicon.">Single-Electron Capacitance Spectroscopy of Individual Dopants in Silicon.</a> Nano Lett. 11, 5208-5212 (2011).</li><li>Kuljanishvili, I., Kayis, C., Harrison, J. F., Piermarocchi, C., Kaplan, T. A., Tessmer, S. H., Pfeiffer, L. N., West, K. W. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Scanning-probe+spectroscopy+of+semiconductor+donor+molecules.">Scanning-probe spectroscopy of semiconductor donor molecules.</a> Nat. Phys. 4, 227-233 (2008).</li><li>Tessmer, S. H., Kuljanishvili, I., Kayis, C., Harrison, J. F., Piermarocchi, C., Kaplan, T. A. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Nanometer-scale+capacitance+spectroscopy+of+semiconductor+donor+molecules.">Nanometer-scale capacitance spectroscopy of semiconductor donor molecules.</a> Physica B. 403, 3774-3780 (2008).</li><li>Yoo, M. J., Fulton, T. A., Hess, H. F., Willett, R. L., Dunkleberger, L. N., Chichester, R. J., Pfeiffer, L. N., West, K. W. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Scanning+Single-Electron+Transistor+Microscopy:+Imaging+Individual+Charges.">Scanning Single-Electron Transistor Microscopy: Imaging Individual Charges.</a> Science. 276, 579-582 (1997).</li><li>Urazhdin, S., Tessmer, S. H., Ashoori, R. C. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=A+simple+low-dissipation+amplifier+for+cryogenic+scanning+tunneling+microscopy.">A simple low-dissipation amplifier for cryogenic scanning tunneling microscopy.</a> Rev. Sci. Instrum. 73 (2), 310-312 (2002).</li><li>Williams, C. C., Hough, W. P., Rishton, S. A. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Scanning+capacitance+microscopy+on+a+25+nm+scale.">Scanning capacitance microscopy on a 25 nm scale.</a> Appl. Phys. Lett. 55 (2), 203-205 (1989).</li><li>Tessmer, S. H., Glicofridis, P. I., Ashoori, R. C., Levitov, L. S., Melloch, M. R. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Subsurface+charge+accumulation+imaging+of+a+quantum+Hall+liquid.">Subsurface charge accumulation imaging of a quantum Hall liquid.</a> Nature. 392, 51-54 (1998).</li><li>Tessmer, S. H., Kuljanishvili, I. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Modeling+single-+and+multiple-electron+resonances+for+electric-field-sensitive+scanning+probes.">Modeling single- and multiple-electron resonances for electric-field-sensitive scanning probes.</a> Nanotechnology. 19, 445503-445510 (2008).</li><li>Kuljanishvili, I., Chakraborty, S., Maasilta, I. J., Tessmer, S. H., Melloch, M. R. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Modeling+electric-field-sensitive+scanning+probe+measurements+for+a+tip+of+arbitrary+shape.">Modeling electric-field-sensitive scanning probe measurements for a tip of arbitrary shape.</a> Ultramicroscopy. 102, 7-12 (2004).</li><li>Martin, J., Akerman, N., Ulbricht, G., Lohmann, T., Smet, J. H., von Klitzing, K., Yacoby, A. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Observation+of+electron-hole+puddles+in+graphene+using+a+scanning+single-electron+transistor.">Observation of electron-hole puddles in graphene using a scanning single-electron transistor.</a> Nat. Phys. 4, 144-148 (2008).</li><li>Ashoori, R. C. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Electrons+in+artificial+atoms.">Electrons in artificial atoms.</a> Nature. 379, 413-419 (1996).</li><li>Ashoori, R. C., Stormer, H. L., Weiner, J. S., Pfeiffer, L. N., Pearton, S. J., Baldwin, K. W., West, K. W. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Single-electron+capacitance+spectroscopy+of+a+few+electron+box.">Single-electron capacitance spectroscopy of a few electron box.</a> Physica B. 189, 117-124 (1993).</li><li>Frohn, J., Wolf, J. F., Besocke, K., Teske, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Coarse+tip+distance+adjustment+and+positioner+for+a+scanning+tunneling+microscope.">Coarse tip distance adjustment and positioner for a scanning tunneling microscope.</a> Rev. Sci. Instrum. 60 (6), 1200-1201 (1989).</li><li>Besocke, K. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=An+easily+operable+scanning+tunneling+microscope.">An easily operable scanning tunneling microscope.</a> Surf. Sci. 181, 145-153 (1987).</li><li>Urazhdin, S., Maasilta, I. J., Chakraborty, S., Moraru, I., Tessmer, S. H. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=High-scan-range+cryogenic+scanning+probe+microscope.">High-scan-range cryogenic scanning probe microscope.</a> Rev. Sci. Instrum. 71 (11), 4170-4173 (2000).</li><li>Ashoori, R. C., Stormer, H. L., Weiner, J. S., Pfeiffer, L. N., Pearton, S. J., Baldwin, K. W., West, K. W. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Single-electron+capacitance+spectroscopy+of+discrete+quantum+levels.">Single-electron capacitance spectroscopy of discrete quantum levels.</a> Phys. Rev. Lett. 68 (20), 3088-3091 (1992).</li></ol>

这个实验方法的理论基础的详细说明中给出的参考文献8和9，与参考文献2中的场景地下掺杂讨论，因此将简要概述和概念。的前端被当作一个电容器的一个极板，相关样本包括另一块板的导电层。如果施加直流电压，使得电子被拉向前端，并且，如果有掺杂剂的原子之间的底层的导电层，且前端，可容纳额外付费，然后将输入的电子掺杂剂，从而得到更接近小费。从静电，电子的运动引起的图像?...

地下电荷积聚（SCA）的成像是一种低温的方法，能够解决单电子充电事件。当应用到半导体中的掺杂原子的研究，该方法可以检测单个电子进入施主或受主原子，允许这些分钟系统的量子结构表征。在它的心脏中，SCA成像是当地的电容测量6非常适合低温操作。因为电容电场的基础上，它是一种远距离的效果，可以解决充电下方的绝缘表面6。低温操作允许将无法解决的常温1,2单电子运动和量子水平间距调查。这项技术可以被应用到任何系统，在该系统中，在绝缘表面以下的电子的运动是很重要的，包括充电动态埋接口7中的二维电子系统;为简洁起见，<html>这里的重点将是半导体掺杂剂的研究。 上面的最示意图的水平，这种技术将扫描的小费作为一个平行板电容器的一个极板，虽然现实的分析的尖端的曲率8,9考虑到需要更详细的描述。在这个模型中的另一块板是纳米级的区域的底层的导电层，在图1中所示。从本质上讲，作为电荷输入响应一个周期性的激励电压的掺杂剂，它越接近到顶端，这个运动诱导的尖端上的电荷，这是与传感器电路5检测到的更多的图像。同样，作为电荷离开掺杂剂，降低尖上的图像电荷。因此充电周期响应激励电压信号是所检测到的信号 - 它本质上是电容，因此该测定是通常被称为作为确定的CV特性的系统。 帐篷“&gt;在电容测量期间，净隧道底层导电层和掺杂剂层 - 电荷不会隧道直接到尖端之间。直接穿隧在测量过程中，或从前端的缺乏是一个重要的区别技术和更熟悉的扫描隧道显微镜的，尽管这样，但此系统的硬件本质上是相同的扫描隧道显微镜，同样重要的是要注意的，，SCA成像是不直接敏感的静电的静电荷。调查分布，扫描开尔文探针显微镜或静电力显微镜的适当的附加的低温方法，用于检查本地电子行为存在，也有良好的电子和空间分辨率，例如，扫描单电子晶体管显微镜的是另一种扫描探针的方法，能够检测分钟，充电SCA成像效果4,10原是由Glicofridis Tessmer，Ashoori和同工7在麻省理工学院开发，而且，这里描述的方法可以被认为是开发的Ashoori和同事11单电子电容光谱法扫描型探针版本。的一个关键要素的测量是一个十分敏感的电荷检测电路5,12使用高电子迁移率晶体管（HEMT），它可以实现0.01电子/ Hz的低噪声水平½在0.3 K低温恒温器的温度，基地在参考文献5中。这样的高灵敏度允许在地下系统中观察单电子充电。此方法适合于个人或小群体的掺杂剂在半导体的电子或空穴的动力学研究中，与典型的掺杂剂的面密度10 15在一个平面上的几何形状2米-2的顺序。 图1所示的一个例子，一个典型的这种类型的实验的示例配置</strong&gt;。掺杂层通常位于几十纳米的表面之下，重要的是要知道底层的导电层和掺杂剂层之间的掺杂层和样品表面之间的精确距离。隧道相反，电容不脱落成倍而是本质上的距离成反比减小。因此，掺杂剂的深度原则上可以更深地大于几十纳米的表面之下，只要一些合理的小部分的尖端电场的土地上。对于所有上述低温本地探针的电子的行为，包括这里描述的技术中，空间分辨率是有限的针尖大小的几何和地下特征，利益和扫描探针针尖之间的距离。

<table border="1">
		<tbody>
		 <tr>
			<td></td>
			<td></td>
			<td></td>
			<td>Equipment</td>
		 </tr>
		 <tr>
			<td>Besocke-design STM</td>
			<td>Custom</td>
			<td></td>
			<td>References 14 and 15</td>
		 </tr>
		 <tr>
			<td>Control electronics for STM</td>
			<td>RHK Technology</td>
			<td>SPM 1000 Revision 7</td>
			<td></td>
		 </tr>
		 <tr>
			<td>Lock-in amplifier</td>
			<td>Stanford Research Systems</td>
			<td>SR830</td>
			<td></td>
		 </tr>
		 <tr>
			<td>Curve tracer</td>
			<td>Tektronix</td>
			<td>Type 576</td>
			<td></td>
		 </tr>
		 <tr>
			<td>Oscilloscope</td>
			<td>Tektronix</td>
			<td>TDS360</td>
			<td></td>
		 </tr>
		 <tr>
			<td>Multimeter</td>
			<td>Tektronix</td>
			<td>DMM912</td>
			<td></td>
		 </tr>
		 <tr>
			<td>Wire bonder</td>
			<td>WEST&middot;BOND</td>
			<td>7476D</td>
			<td>with K~1200D temperature controller</td>
		 </tr>
		 <tr>
			<td>Soldering iron</td>
			<td>MPJA</td>
			<td>301-A</td>
			<td></td>
		 </tr>
		 <tr>
			<td>Cryostat</td>
			<td>Oxford Instruments</td>
			<td>Heliox</td>
			<td></td>
		 </tr>
		 <tr>
			<td></td>
			<td></td>
			<td></td>
			<td>Material</td>
		 </tr>
		 <tr>
			<td>Pt/Ir wire, 80:20</td>
			<td>nanoScience Instruments</td>
			<td>201100</td>
			<td></td>
		 </tr>
		 <tr>
			<td>GaAs wafer</td>
			<td>axt</td>
			<td>S-I</td>
			<td>For the mounting chip</td>
		 </tr>
		 <tr>
			<td>99.99% Au wire, 2 mil diameter</td>
			<td>SPM</td>
			<td></td>
			<td>For the mounting chip</td>
		 </tr>
		 <tr>
			<td>99.99% Au wire, 1 mil diameter</td>
			<td>K&amp;S</td>
			<td></td>
			<td>For wire bonding</td>
		 </tr>
		 <tr>
			<td>Indium shot</td>
			<td>Alfa Aesar</td>
			<td>11026</td>
			<td></td>
		 </tr>
		 <tr>
			<td>Silver epoxy</td>
			<td>Epo-Tek</td>
			<td>EJ2189-LV</td>
			<td>Any low-temperature-compatible conductive epoxy is acceptable</td>
		 </tr>
		 <tr>
			<td>HEMT</td>
			<td>Fujitsu</td>
			<td>Low Noise HEMT</td>
			<td></td>
		 </tr>
		</tbody>
 </table>

scanning-probe single-electron capacitance spectroscopy

低温扫描探针技术和单电子电容光谱的整合是一个功能强大的工具，学习电子小系统 - 包括个别原子掺杂半导体量子结构。在这里，我们提出了一种基于电容的方法，被称为地下电荷积聚（SCA）的成像，这是能够解决单电子充电，同时实现足够的空间分辨率图像的各个原子掺杂。使用电容技术使观察的地下特征，如掺杂剂的掩埋许多纳米的半导体材料1,2,3的表面之下。原则上，这种技术可以被应用到任何系统，以解决在绝缘表面以下的电子的运动。 在其他电场敏感的扫描探针技术4，横向的空间分辨率的测量部分依赖于半径curvaturE探头尖端。使用具有较小的曲率半径的提示，可以使空间分辨率为几十纳米。这种精细空间分辨允许小的数字（一）调查地下掺杂1,2。决议的充电的充电检测电路的灵敏度在很大程度上依赖于使用在这样的电路在超低温下的高电子迁移率晶体管（HEMT），实现了灵敏度的约0.01电子/赫兹½在0.3 K 5。

一个成功的测量的主要指标是可重复的，就像在其他扫描探针方法。重复测量是非常重要的，因为这个原因。对于点电容光谱，在同一位置，可以采取许多连续测量的增加的信号 - 噪声比，和拣选的杂散信号。 一旦关注的功能已经确定内的电荷积累图像和电容光谱已被执行，确定电压的杠杆臂的CV数据开始解释。的电压的杠杆臂的比例因子有关的位置处的掺杂剂，所施加的V <...

Watch this Scientific Journal Video about Scanning-probe Single-electron Capacitance Spectroscopy at JoVE.com

Scanning-probe Single-electron Capacitance Spectroscopy

扫描探针单电子电容谱有利于在本地化的地下区域的单电子运动的研究。一个敏感的低温扫描探针显微镜研究半导体样品的表面下方的小系统的掺杂原子电荷检测电路纳入。

扫描探针单电子电容谱

The integration of low-temperature scanning-probe techniques and single-electron capacitance spectroscopy represents a powerful tool to study the ...

Research

Education

JoVE Core

JoVE Journal

Electrical Engineering

Engineering

Unit 1

Energy Storage Elements

SCIENTISTS IN ACTION

Angle-resolved Photoemission Spectroscopy At Ultra-low Temperatures

在极低的温度下角分辨光电子能谱

The physical properties of a material are defined by its  electronic structure. Electrons in solids are characterized by energy (&omega;)  and momentum ...

科研

工程学

Quantum State Engineering of Light with Continuous-wave Optical Parametric Oscillators

光与连续波光学参量振荡器的量子态工程

Engineering non-classical states of the electromagnetic field is a central quest for quantum optics1,2. Beyond their fundamental significance, such states ...

Investigating Single Molecule Adhesion by Atomic Force Spectroscopy

调查单分子粘附的原子力谱

Atomic force spectroscopy is an ideal tool to study molecules at surfaces and interfaces. An experimental protocol to couple a large variety of single ...

Surface Enhanced Raman Spectroscopy Detection of Biomolecules Using EBL Fabricated Nanostructured Substrates

表面增强拉曼光谱检测生物分子利用EBL装配纳米衬底

Fabrication and characterization of conjugate nano-biological systems interfacing metallic nanostructures on solid supports with immobilized biomolecules ...

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

硅金属 - 氧化物 - 半导体量子点单电子泵

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by ...

Resonance Raman Spectroscopy of Extreme Nanowires and Other 1D Systems

至尊纳米线和其他维系统的共振拉曼光谱

This paper briefly describes how nanowires with diameters corresponding to 1 to 5 atoms can be produced by melting a range of inorganic solids in the ...

High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy

高分辨率声子辅助准共振荧光光谱仪

High resolution optical spectroscopy methods are demanding in terms of either technology, equipment, complexity, time or a combination of these. Here we ...

Free-form Light Actuators &#8212; Fabrication and Control of Actuation in Microscopic Scale

Free-form Light Actuators ÃƒÂ¢Ã¢â€šÂ¬Ã¢â‚¬Â Fabrication and Control of Actuation in Microscopic Scale

自由形式的光驱动器 - 制作和开动控制在微观尺度

Liquid crystalline elastomers (LCEs) are smart materials capable of reversible shape-change in response to external stimuli, and have attracted ...

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

探测ç<sub&gt; 84</sub&gt; - 嵌入式硅衬底利用扫描探针显微镜和分子动力学

This paper reports an array-designed C84-embedded Si substrate fabricated using a controlled self-assembly method in an ultra-high vacuum chamber. The ...

Applying X-ray Imaging Crystal Spectroscopy for Use as a High Temperature Plasma Diagnostic

运用X射线成像光谱水晶的使用为高温等离子体诊断

X-ray spectra provide a wealth of information on high temperature plasmas; for example electron temperature and density can be inferred from line ...