Name: analysis of contact interfaces for single gan nanowire devices
Uploaded: 2013-11-15T17:00:00
Description: Watch this Scientific Journal Video about Analysis of Contact Interfaces for Single GaN Nanowire Devices at JoVE.com

笔者想承认个人标准与技术研究所在科罗拉多州博尔德的协助的量子电子学与光电子事业部。

在这些实验中使用的氮化镓奈米线通过无催化剂的分子束外延（MBE）在Si（111）衬底上生长9。从与作为生长纳米线的衬底制备洒水悬浮液的一般方法示于图1。 1。纳米线的制备暂停<ol><li>切割一个小的（&lt;5毫米×5毫米）的一块基片上的作为生长的纳米线的。 </li><li>填补小加盖小瓶约1毫升异丙醇（IPA）。 </li><li>放置在切割的片到小瓶中，盖上，超声处?...

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	<li>Lu, W., Lieber, C. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Semiconductor+nanowires.">Semiconductor nanowires.</a> J. Phys. D: Appl. Phys. 39, R387-R406 (2006).</li><li>Mater Res, A. n. n. u. R. e. v. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=.">.</a> 34, 83-122 (2004).</li><li>Pettersen, S. V., Grande, A. P., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Formation+and+electronic+properties+of+oxygen+annealed+Au/Ni+and+Pt/Ni+contacts+to+p-type.">Formation and electronic properties of oxygen annealed Au/Ni and Pt/Ni contacts to p-type.</a> 22, 186-193 (2007).</li><li>Chen, L. C., Ho, J. K., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=The+Effect+of+Heat+Treatment+on+Ni/Au+Ohmic+Contacts+to+p-Type.">The Effect of Heat Treatment on Ni/Au Ohmic Contacts to p-Type.</a> 176, 773-777 (1999).</li><li>Liday, J., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Investigation+of+NiOx-based+contacts+on+p-GaN.">Investigation of NiOx-based contacts on p-GaN.</a> J. Mater. Sci. Mater. Electron. 19, 855-862 (2008).</li><li>Narayan, J., Wang, H., Oh, T. H., Choi, H. K., Fan, J. C. C. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Formation+of+epitaxial+Au/Ni/Au+ohmic+contacts+to+p-GaN.">Formation of epitaxial Au/Ni/Au ohmic contacts to p-GaN.</a> Appl. Phys. Lett. 81 (21), 3978-3980 (2002).</li><li>Ho, J. K., Jong, C. S., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Low-resistance+ohmic+contacts+to+p-type+GaN+achieved+by+the+oxidation+of+Ni/Au+films.">Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films.</a> J. Appl. Phys. Lett. 86 (8), 4491-4497 (1999).</li><li>Herrero, A. M., Blanchard, P., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Microstructure+evolution+and+development+of+annealed+Ni/Au+contacts+to+GaN+nanowires.">Microstructure evolution and development of annealed Ni/Au contacts to GaN nanowires.</a> Nanotechnology. 23 (36), 5203.1-5203.10 (2012).</li><li>Bertness, K. A., Roshko, A., Sanford, N. A., Barker, J. M., Davydov, A. V. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Spontaneously+grown+GaN+and+AlGaN+nanowires.">Spontaneously grown GaN and AlGaN nanowires.</a> J. Crystal Growth. 287, 522-527 (2006).</li><li>Herrero, A. M., Bertness, K. A. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Optimization+of+Dispersion+and+Surface+Pretreatment+for+Single+GaN+Nanowire+Devices.">Optimization of Dispersion and Surface Pretreatment for Single GaN Nanowire Devices.</a> J. Vac. Sci. Tech. B. 30 (6), 2201.1-2201.5 (2012).</li></ol>

提出的技术允许接触/基板和单重设备的接触/净重微观结构分析。该技术的主要优点是它的低成本和简单性。它允许在大规模与基板以及在亚微米尺度与个别纳米线的接触界面的定性和定量分析。对于膜去除和SEM针存根样品安装使用碳胶带的制造尽可能使用需要洁净的低压环境的表征技术分析它。除了使用SEM成像的界面形态，众多的其它表征技术都可以使用，包括EDS，X射线光电子能谱（XPS），俄?...

单洒水装置由分散洒水悬浮在绝缘基片，并通过常规的光刻和金属淀积，导致随机形成2端器件在基板上形成的接触垫制成。在Si晶片上的厚的SiO 2膜通常用作绝缘基片1,2。用于金属沉积在SiO 2的表面上，从热处理所产生的一个常见的问题是空隙形成在金属/ SiO 2界面的发生。除了裂化和金属膜的脱层，这空隙的形成可以带负器件性能从电阻增加引起的降低的接触面积的影响。镍/金触点被氧化的N 2 / O 2个大气压的应用于p型GaN 3-7最主要的接触方式。期间在N 2 / O 2的热处理，使镍扩散到表面以形成氧化镍和金向下扩散到衬底表面。 在这项工作中，过度空洞形成在接触/净重和接触/ SiO 2的接口被证明是发生镍/金触点退火纳米线在SiO 2 8中。将退火的Ni / Au膜的表面形态，但是，并不表示空隙的存在或形成空隙已发生的程度。为了解决这个问题，我们开发了用于从的SiO 2 / Si衬底上，以分析与衬底和纳米线接触的界面中除去Ni / Au的接触和GaN纳米线的技术。这种技术可以用于去除具有粘合性差的基板接触的任何结构的。 Ni / Au的薄膜的GaN纳米线嵌在它们是从与碳胶带在SiO 2衬底除去。碳胶带粘到一个标准的针通过使用扫描电子显微镜（SEM）的沿与几个其它工具安装架，用于表征。对于晶圆厂的详细过程单氮化镓净重设备和他们的接触界面形态分析rication描述。

<table border="1">
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			<td></td>
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			<td></td>
			<td>REAGENTS and MATERIALS</td>
		</tr>
		<tr>
			<td>Lift-off resist</td>
			<td>MicroChem</td>
			<td>LOR 5A</td>
			<td>Varies according to application</td>
		</tr>
		<tr>
			<td>Photoresist</td>
			<td>Shipley</td>
			<td>1813</td>
			<td>Varies according to application</td>
		</tr>
		<tr>
			<td>Developer</td>
			<td>Rohm and Haas Electronic Materials</td>
			<td>MF CD-26</td>
			<td>Varies according to application</td>
		</tr>
		<tr>
			<td>Photoresist stripper</td>
			<td>MicroChem</td>
			<td>Nano Remover PG</td>
			<td>Varies according to application</td>
		</tr>
		<tr>
			<td>Ni source</td>
			<td>International Advanced Materials</td>
			<td>99.999% purity</td>
			<td></td>
		</tr>
		<tr>
			<td>Au source</td>
			<td>International Advanced Materials</td>
			<td>99.999% purity</td>
			<td></td>
		</tr>
		<tr>
			<td>SiO2/Si wafers</td>
			<td>Silicon Valley Microelectronics</td>
			<td>3-inch &#60;100&#62; N/As 0.001-0.005 Ohm-cm, 200 nm thermal oxide</td>
			<td></td>
		</tr>
		<tr>
			<td>Carbon tape</td>
			<td>SPI Supplies</td>
			<td>5072, 8 mm wide</td>
			<td></td>
		</tr>
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			<td></td>
			<td></td>
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			<td>Solvents are standard semiconductor or research grade. Vendor is not important for the experimental outcome.</td>
		</tr>
		<tr>
			<td></td>
			<td></td>
			<td></td>
			<td>Reactive ion etch gases and thermal annealing gases are high purity grade. Vendor is not important for the experimental outcome.</td>
		</tr>
		<tr>
			<td></td>
			<td></td>
			<td></td>
			<td>EQUIPMENT</td>
		</tr>
		<tr>
			<td>Ultrasonic cleaner</td>
			<td>Cole-Palmer</td>
			<td>EW-08849-00</td>
			<td>Low power</td>
		</tr>
		<tr>
			<td>Micropipette</td>
			<td>Rainin</td>
			<td>PR-200</td>
			<td>Metered, disposal tips</td>
		</tr>
		<tr>
			<td>Reactive ion etcher</td>
			<td>SemiGroup</td>
			<td>RIE 1000 TP</td>
			<td>Other vendors also used with different process parameters</td>
		</tr>
		<tr>
			<td>Mask aligner</td>
			<td>Karl Suss</td>
			<td>MJB3</td>
			<td>Other vendors also used with different process parameters</td>
		</tr>
		<tr>
			<td>UV ozone cleaner</td>
			<td>Jelight</td>
			<td>Model 42</td>
			<td>Other vendors also used with different process parameters</td>
		</tr>
		<tr>
			<td>E-beam evaporator</td>
			<td>CVC</td>
			<td>SC-6000</td>
			<td>Other vendors also used with different process parameters</td>
		</tr>
		<tr>
			<td></td>
			<td></td>
			<td></td>
			<td>* Manufacturers and product names are given solely for completeness. These specific citations neither constitute an endorsement of the product by NIST nor imply that similar products from other companies would be less suitable.</td>
		</tr>
	</tbody>
</table>

analysis of contact interfaces for single gan nanowire devices

上制作SiO 2的单一的GaN纳米线（NW）的设备可以在退火后表现出很强的降解是由于空隙形成在接触/ SiO 2界面的发生。这个空隙的形成可导致开裂和金属膜，从而可提高电阻或引起的洒水装置的完全失败的脱层。为了解决与空洞形成相关的问题，这种技术被开发，可以消除Ni / Au的接触金属片从基底，以允许接触/基板和氮化镓单净重设备的接触/净重接口的检验和鉴定。这个过程确定的接触片与衬底和纳米线的粘合程度，并允许与衬底和纳米线的接触界面的形态和组成的表征。该技术也是用于评估残留污染，剩下西北悬浮量有用从第二对NW-SiO 2的表面之前，金属沉积光刻工艺。呈现用于去除退火Ni / Au的接触，Mg掺杂GaN纳米线在SiO 2基板这一过程的详细步骤。

在使用碳胶带的SiO 2基板退火除去Ni / Au的膜的SEM分析的一个例子示于图4。的Ni / Au的接触之前，除去表面示于图4A中 。取出后，该特定的Ni / Au膜的同一个区域的下侧， 如图4B所示。表面和底面的形态的比较可帮助确定是否存在两者之间的关系。例如，当两个图像进行比较，可以看出，（a）中的黑点的黑特性重合的（b）。在更高的放大倍率，Ni / Au的?...

Watch this Scientific Journal Video about Analysis of Contact Interfaces for Single GaN Nanowire Devices at JoVE.com

Analysis of Contact Interfaces for Single GaN Nanowire Devices

一种技术的开发，可以消除镍/金金属接触片从基底，以允许接触/基板和氮化镓单纳米线器件的接触/净重接口的检验和鉴定。

单氮化镓纳米线设备分析接触界面

Single GaN nanowire (NW) devices fabricated on SiO2 can exhibit  a strong degradation after annealing due to the  occurrence of void formation at the ...

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Flow-assisted dielectrophoresis (DEP) is an efficient self-assembly method for the controllable and reproducible positioning, alignment, and selection of ...

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Tin selenide (SnSe) belongs to the family of layered metal chalcogenide materials with a buckled structure like phosphorene, and has shown potential for ...

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The use of microfluidic devices has emerged as a defining tool for biomedical applications. When combined with modern microscopy techniques, these devices ...

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在 Cu(In、Ga)Se2薄膜太阳能电池中制造银纳米线电极与 CdS 缓冲层之间的强健纳米级接触

Silver nanowire transparent electrodes have been employed as window layers for Cu(In,Ga)Se2 thin-film solar cells. Bare silver nanowire electrodes ...

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A procedure using digital image correlation (DIC) to detect cracks on welded specimens during fatigue tests on resonance testing machines is presented. It ...