Name: fabrication of uniform nanoscale cavities via silicon direct wafer bonding
Uploaded: 2014-01-09T14:15:00
Description: Watch this Scientific Journal Video about Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding at JoVE.com

这项工作由NSF赠款DMR-0605716和DMR-1101189资助。此外，康奈尔纳米尺度科技中心被用来生长和模式氧化物。我们感谢他们的帮助。我们中的一个FMG感谢莫蒂·拉尔·鲁斯特吉教授的支持。

1. 粘结前，晶圆准备
此步骤（1.8 除外）在康奈尔纳米级设施洁净室完成。
<ol><li>使用湿氧化物工艺在标准热氧化炉中种植氧化物，以获得更好的厚度控制，实现非常薄的氧化物的干氧化过程。检查厚度，以获得与椭圆体相同的完整晶圆。</li>
	<li>为您希望蚀刻的几何形状创建一个面膜。</li>
	<li>在蚀刻的晶圆上旋转光分辨率。</li>
	<li>暴露、开发和烘烤测试晶圆，并用适当的?...

<ol>
	<li>Gasparini, F. M., Kimball, M. O., Mooney, K. P., Diaz-Avila, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Finite-size+scaling+of+He-4+at+the+superfluid+transition.">Finite-size scaling of He-4 at the superfluid transition.</a> Rev. Mod. Phys. 80, 1009-1059 (2008).</li><li>Mehta, S., Kimball, M. O., Gasparini, F. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Superfluid+transition+of+He-4+for+two-dimensional+crossover,+heat+capacity,+and+finite-size+scaling.">Superfluid transition of He-4 for two-dimensional crossover, heat capacity, and finite-size scaling.</a> J. Low Temp. Phys. 114, 467-521 (1999).</li><li>Reppy, J. D. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Superfluid-Helium+in+Porous-Media.">Superfluid-Helium in Porous-Media.</a> J. Low Temp. Phys. 87, 205-245 (1992).</li><li>Mehta, S., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Silicon+wafers+at+sub-mu+m+separation+for+confined+He-4+experiments.">Silicon wafers at sub-mu m separation for confined He-4 experiments.</a> Czech. J. Phys. 46, 133-134 (1996).</li><li>Tong, Q. Y., Cha, G. H., Gafiteanu, R., Gosele, U. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=.">.</a> Low-Temperature Wafer Direct Bonding. J. Microelectromech. S. 3, 29-35 (1994).</li><li>Tong, Q. Y., Gosele, U. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Semiconductor+Wafer+Bonding+-+Recent+Developments.">Semiconductor Wafer Bonding - Recent Developments.</a> Mater. Chem. Phys. 37, 101-127 (1994).</li><li>Gosele, U., Tong, Q. Y. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Semiconductor+wafer+bonding.">Semiconductor wafer bonding.</a> Annu. Rev. Mater. Sci. 28, 215-241 (1998).</li><li>Rhee, I., Petrou, A., Bishop, D. J., Gasparini, F. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Bonding+Si-Wafers+at+Uniform+Separation.">Bonding Si-Wafers at Uniform Separation.</a> Physica B. 165, 123-124 (1990).</li><li>Rhee, I., Gasparini, F. M., Petrou, A., Bishop, D. J. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Si+Wafers+Uniformly+Spaced+-+Bonding+and+Diagnostics.">Si Wafers Uniformly Spaced - Bonding and Diagnostics.</a> Rev. Sci. Instrum. 61, 1528-1536 (1990).</li><li>Perron, J. K., Kimball, M. O., Mooney, K. P., Gasparini, F. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Critical+behavior+of+coupled+4He+regions+near+the+superfluid+transition.">Critical behavior of coupled 4He regions near the superfluid transition.</a> Phys. Rev. B. 87, (2013).</li><li>Perron, J., Gasparini, F. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Specific+Heat+and+Superfluid+Density+of+4He+near+T+&#955;+of+a+33.6+nm+Film+Formed+Between+Si.">Specific Heat and Superfluid Density of 4He near T &#955; of a 33.6 nm Film Formed Between Si.</a> , 1-10 (2012).</li><li>Perron, J. K., Gasparini, F. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Critical+Point+Coupling+and+Proximity+Effects+in+He-4+at+the+Superfluid+Transition.+.">Critical Point Coupling and Proximity Effects in He-4 at the Superfluid Transition. .</a> Phys. Rev. Lett.. 109, (2012).</li><li>Gasparini, F. M., Kimball, M. O., Mehta, S. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Adiabatic+fountain+resonance+for+He-4+and+He-3-He-4+mixtures.">Adiabatic fountain resonance for He-4 and He-3-He-4 mixtures.</a> J. Low Temp. Phys. 125, 215-238 (2001).</li><li>Corruccini, R. J., Gniewek, J. J. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Thermal+expansion+of+technical+solids+at+low+temperatures;+a+compilation+from+the+literature.">Thermal expansion of technical solids at low temperatures; a compilation from the literature.</a> U.S. Dept. of Commerce, National Bureau of Standards. , (1961).</li><li>Kahn, H., Deeb, C., Chasiotis, I., Heuer, A. H. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Anodic+oxidation+during+MEMS+processing+of+silicon+and+polysilicon:+Native+oxides+can+be+thicker+than+you+think.">Anodic oxidation during MEMS processing of silicon and polysilicon: Native oxides can be thicker than you think.</a> J. Microelectromech. S. 14, 914-923 (2005).</li><li>Tong, Q. Y., Gosele, U. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Thickness+Considerations+in+Direct+Silicon-Wafer+Bonding.">Thickness Considerations in Direct Silicon-Wafer Bonding.</a> J. Electrochem. Soc. 142, 3975-3979 (1995).</li><li>Corbino, O. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Azioni+Elettromagnetiche+Doyute+Agli+Ioni+dei+Metalli+Deviati+Dalla+Traiettoria+Normale+per+Effetto+di+un+Campo.">Azioni Elettromagnetiche Doyute Agli Ioni dei Metalli Deviati Dalla Traiettoria Normale per Effetto di un Campo.</a> Nuovo Cim. 1, 397-420 (1911).</li><li>Diaz-Avila, M., Kimball, M. O., Gasparini, F. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Behavior+of+He-4+near+T-lambda+in+films+of+infinite+and+finite+lateral+extent.">Behavior of He-4 near T-lambda in films of infinite and finite lateral extent.</a> J. Low Temp. Phys. 134, 613-618 (2004).</li><li>Dimov, S., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Anodically+bonded+submicron+microfluidic+chambers.">Anodically bonded submicron microfluidic chambers.</a> Rev. Sci. Instrum. 81, (2010).</li><li>Duh, A., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Microfluidic+and+Nanofluidic+Cavities+for+Quantum+Fluids+Experiments.">Microfluidic and Nanofluidic Cavities for Quantum Fluids Experiments.</a> J. Low Temp. Phys. 168, 31-39 (2012).</li></ol>

合适的硅光刻技术与直接晶圆粘接相结合，使我们能够在直径为 5 厘米的硅晶圆的整个区域内制造具有高度均匀小尺寸的真空紧闭外壳。这些外壳使我们能够研究液体 4He在其相位附近从正常液体向超流体过渡的行为。这些研究验证了对有限尺寸缩放的预测，并指出了仍有待探索的失败。这项工作还首次确定了一种非常强的耦合，这种耦合在两个液体区域之间，当被非常薄的~30纳米薄膜隔?...

当清洁硅晶片在 RT 被引入亲密接触时，它们会通过范德瓦尔斯的力量相互吸引，并形成薄弱的局部纽带。这种结合可以通过在5，6的高温下退化而变得更加牢固。粘接可以成功地完成与SiO2到Si或SiO2到SiO2的表面。硅晶圆的粘接最常用于绝缘器设备上的硅、硅基传感器和执行器以及光学设备7。这里描述的工作需要晶圆直接粘合在不同的方向，通过用它来实现明确定义的均匀间隔的外壳在整个晶圆面积8，9。具有明确的几何形状，其中可以引入流体，允许进行测量，以确定禁闭对流体特性的影响。水动力流可以研究，小尺寸可以控制从几十纳米到几微米。
SiO2 可在炉中使用湿或干热氧化工艺在 Si 晶圆上生长。然后，SiO2 可以使用石版画技术根据需要进行图案和蚀刻。在我们的工作中使用的模式包括一个广间隔的支持职位的模式，这些支持职位在平面或胶片几何中结合后产生（见 图1）。我们还对一维特性的通道和框阵列进行了成型，包括 （1μm）3 或 （2 μm）3 维1（ 见 图 2）。在设计一个盒子的禁闭，通常1000万至6000万的晶圆，需要有一种方法来填补所有的单个盒子。顶部晶圆的单独图案与设计，站在两个晶圆30纳米或以上允许这一点。或者，同样，浅通道可以在顶部晶圆上设计，以便所有框都连接在一起。顶部晶圆上生长的氧化物厚度与底部晶圆上的厚度不同。这为设计增加了另一种程度的灵活性和复杂性。能够对两个晶圆进行图案，可以实现更多的限制几何形状。
这些粘结晶圆或单元格中几何特征的大小可能有所不同。小至30纳米的平面薄膜细胞已经成功地制作了10，11。在下面的厚度下，可以发生过度粘接，使晶圆绕支撑柱弯曲，从而"密封"细胞。最近，对液体4的一系列测量，他用一个阵列（2μm）3个盒子进行了测量，它们之间的分离距离不同，为10，12。由于生长氧化物所需的时间长度增加，深度大于 2μm 的特征不太实用。然而，用厚达3.9微米9的氧化物进行了测量。横向维度小度的限制产生于光刻能力的限制。横向维度的大限由晶圆的大小决定。我们已经成功地创造了平面细胞，横向维度几乎跨越了整个晶圆直径，但人们可以同样容易地想象在宽度几十纳米的顺序上对几个较小的结构进行图案化。然而，这种结构需要电子光束光刻。我们目前没有这样做。
在我们所有的工作中，粘结晶圆形成了一个真空紧闭的外壳。这是通过在晶圆周围保留一个3-4 毫米宽度的SiO 2的固体环，见 图1来实现的。这，在粘接后，形成一个紧密的密封。如果对需要输入和输出的水动力学研究感兴趣，这种设计很容易修改。
保税细胞的爆裂压力也已得到测试。我们发现，375微米厚的晶圆可以施加高达约9个大气层的压力。然而，我们还没有研究如何通过在较大的氧化物区域或更厚的晶圆上粘合来改善这种状况。
将硅细胞与填充线接轨的程序以及在低温下测量密闭氦特性的技术在Mehta 等人中给予。2 和加斯帕里尼 等人。13我们注意到，在冷却电池14时，硅的线性维度变化仅为0.02%。对于 RT 形成的模式，这可以忽略不计。

<table border="0" cellpadding="0" cellspacing="0" width="1111">
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	<tbody>
		<tr height="20">
			<td height="20" style="height:20px;width:215px;">SmartCut</td>
			<td style="width:192px;">North American Tool</td>
			<td style="width:104px;">FL 130</td>
			<td style="width:600px;">Not much is needed per cell. Smaller sizes are available.</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Silicon Wafers</td>
			<td>Semiconductor Processing Co</td>
			<td></td>
			<td>There are many suppliers. Pay attention to thickness and thickness variation when ordering.</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Deionized Water</td>
			<td></td>
			<td></td>
			<td>General Availability</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Peroxide</td>
			<td></td>
			<td></td>
			<td>General Availability</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Hydrochloric Acid</td>
			<td></td>
			<td></td>
			<td>General Availability</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Ammonium Hydroxide</td>
			<td></td>
			<td></td>
			<td>General Availability</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Nitrogen Gas</td>
			<td></td>
			<td></td>
			<td>General Availability</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Helium Gas</td>
			<td></td>
			<td></td>
			<td>General Availability</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Diamond Paste</td>
			<td>Beuler Metadi II</td>
			<td>e.g. 406533032</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Diamond Drills</td>
			<td>Starlite</td>
			<td>e.g. 115010</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Pyrex Dishes</td>
			<td></td>
			<td></td>
			<td>General Availability</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Filter Paper</td>
			<td>Whatman</td>
			<td>1001-110</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Acetone</td>
			<td></td>
			<td></td>
			<td>General Availability</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Methanol</td>
			<td></td>
			<td></td>
			<td>General Availability</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Quartz tubes for flushing furnace</td>
			<td></td>
			<td></td>
			<td>General Availability</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Rubber vacuum hose</td>
			<td></td>
			<td></td>
			<td>General Availability</td>
		</tr>
	</tbody>
</table>

fabrication of uniform nanoscale cavities via silicon direct wafer bonding

使用石版图案和粘结硅晶片在兰姆达过渡附近进行了热容量和超流体分数的测量。与通常用于这些类型的实验的多孔材料的密闭不同，粘结晶圆为禁闭提供了预先设计统一的空间。每个单元格的几何形状是众所周知的，这消除了数据解释中模糊性的巨大来源。
特别平坦，直径5厘米，375微米厚的Si晶圆与约1μm的变化在整个晶圆可以获得商业（例如，从半导体加工公司）。热氧化物生长在晶圆上，以定义 z 方向的禁闭维度。然后使用石版印刷技术将图案蚀刻在氧化物中，以便在粘合时创建所需的外壳。在其中一个晶圆（顶部）中钻一个孔，以便测量液体的引入。晶圆在RCA溶液中清洗2 个，然后放入微清洁室，用除离子水冲洗4。晶圆在 RT 粘合，然后在 €1，100 °C 下退化。 这形成了一种牢固而永久的纽带。这个过程可用于制作统一的外壳，用于测量从纳米到微米尺度的限制性液体的热和水动力学特性。

适当的粘结晶圆将没有未绑定区域。在退赛后尝试分割晶圆会导致细胞因粘结强度而碎成碎片。正确粘合晶圆的红外图像显示在图 5 和 图 6 中。退化通常会提高细胞的均匀性，特别是如果局部未结核区域由于晶圆缺乏平整性。图 5 中，光点和边界为保税区。中心亮点是填充细胞的孔。在黑暗区域，晶圆处于 0.321 μm 分离。 图 5 中唯一未绑定区域?...

Watch this Scientific Journal Video about Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding at JoVE.com

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

描述了永久粘合两个硅晶片以实现统一外壳的方法。这包括晶圆制备、清洁、RT 粘接和退化过程。由此产生的粘结晶圆（细胞）具有外壳均匀性~1%1，2。由此产生的几何形状允许测量封闭的液体和气体。

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Electrically assisted deformation (EAD) is increasingly being used to improve the formability of metals during processes such as sheet metal rolling and ...

Fabrication of Magnetic Nanostructures on Silicon Nitride Membranes for Magnetic Vortex Studies Using Transmission Microscopy Techniques

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Electron and x-ray magnetic microscopies allow for high-resolution magnetic imaging down to tens of nanometers. However, the samples need to be prepared ...