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DOI :
10.3791/53614-v
January 4th, 2016
Chapters
0:05
Title
1:02
Cleaning and Etching the Silicon Wafers
4:08
Silicon Wafer Passivation and Photoconductive (PC) Measurement
7:08
Results: Silicon Wafer Photoconductive Measurement after Surface Passivation
8:10
Conclusion
バルクシリコンの欠陥の再結合活性を調べるRT液体表面パッシベーション技術が記載されています。 1分間15%のフッ酸と、(iii)照明(I)において、化学洗浄及びシリコンのエッチング、シリコンの(ii)の浸漬:技術を成功させるには、3つの重要な手順が必要です。
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