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DOI :
10.3791/54268-v
July 26th, 2016
Chapters
0:05
Title
1:20
Cleaning the Germanium Substrate
2:46
Loading to the Vacuum System and Germanium Deoxidization
4:30
Thin Film ALD Growth and Annealing of the Strontium Titanate (STO) Film
7:23
Results: RHEED and X-ray Diffraction Analysis
8:41
Conclusion
この作品は、原子層堆積によりゲルマニウム基板上に直接結晶のSrTiO 3の成長と特性評価のための手順を詳しく説明しています。手順は、モノリシック金属酸化物半導体デバイスのための半導体の上に酸化物を統合するためのすべての化学的成長法の能力を示しています。
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