Name: epitaxial growth of perovskite strontium titanate on germanium via atomic layer deposition
Uploaded: 2016-07-26T14:00:00
Description: Watch this Scientific Journal Video about Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition at JoVE.com

This research was supported by the National Science Foundation (Awards CMMI-1437050 and DMR-1207342), the Office of Naval Research (Grant N00014-10-10489), and the Air Force Office of Scientific Research (Grant FA9550-14-1-0090).

1. Подготовка Sr и Ti Предшественники для ALD экспериментов <ol><li> Загрузите чистую, сухую Увлажнители и новых предшественников в преддверие ящика для перчаток. Следуйте процедуре загрузки бардачке, чтобы обеспечить надлежащую очистку воздуха и влаги. Передача материалов в основную камер?...

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Чистота подложки Ge является ключом к успеху при выращивании эпитаксиального перовскита с помощью ALD. Количество времени, подложка Ge проводит между обезжиривания и раскисления, а также количество времени между раскисления и отложение STO, должно быть сведено к минимуму. Образцы по-прежн?...

<table border="0" cellpadding="0" cellspacing="0" width="963">
	<tbody>
		<tr height="20">
			<td height="20" style="height:20px;width:285px;">MBE</td>
			<td style="width:235px;">DCA</td>
			<td style="width:143px;">M600</td>
			<td style="width:301px;"></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Cryopump for MBE</td>
			<td>Brooks Automation, Inc.</td>
			<td>On-Board 8</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Residual Gas Analyzer for MBE</td>
			<td>Extorr, Inc.</td>
			<td>XT200M</td>
			<td></td>
		</tr>
		<tr height="23">
			<td height="23" style="height:23px;">ALD Reaction Chamber</td>
			<td>Huntington Mechanical Laboratories</td>
			<td>N/A</td>
			<td>Custom manufactured, hot-wall, stainless steel, rectangular (~20 cm long, 460 cm3)</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">ALD Saturator</td>
			<td>Swagelok/Larson Electronic Glass</td>
			<td>See comments</td>
			<td>Custom-built from parts supplied by Swagelok and Larson Electronic Glass. The saturator is made out of 316 stainless steel and Pyrex. All parts are connected via butt welding. Swagelok catalog numbers:SS-4-VCR-7-8VCRF, SS-4-VCR-1, SS-8-VCR-1-03816, SS-8-VCR-3-8MTW, 316L-12TB7-6-8, SS-8-VCR-9, SS-4-VCR-3-4MTW, SS-T2-S-028-20&#160; Larson Electronic Glass catalog number: SP-075-T</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Manual Valves for Saturators</td>
			<td>Swagelok</td>
			<td>SS-DLVCR4-P and 6LVV-DPFR4-P.</td>
			<td>Both diaphragm-sealed valves are used interchangably by this group. The specific connectors (VCR male/female/etc.) to use will depend on the actual system design.</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">ALD Valves</td>
			<td>Swagelok</td>
			<td>6LVV-ALD3TC333P-CV</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">ALD System Tubing</td>
			<td>Swagelok</td>
			<td></td>
			<td>316L tubing of various sizes. This group uses inner diameter of 1/4&#34;</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">ALD power supply</td>
			<td>AMETEK Programmable Power, Inc.</td>
			<td>Sorensen DCS80-13E</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">ALD Temperature Controller</td>
			<td>Schneider Electric</td>
			<td>Eurotherm 818P4</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">ALD Valve Controller&#160;</td>
			<td>National Instruments</td>
			<td>LabView</td>
			<td>Program developed within the group</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">XPS</td>
			<td>VG Scienta</td>
			<td></td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">RHEED</td>
			<td>Staib Instruments</td>
			<td>CB801420</td>
			<td>18 keV at ~3&#176; incident angle</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">RHEED Analysis System</td>
			<td>k-Space Associates</td>
			<td>kSA 400</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Digital UV Ozone System</td>
			<td>Novascan</td>
			<td>PSD-UV 6</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Ozone Elimination System</td>
			<td>Novascan</td>
			<td>PSD-UV OES-1000D</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Strontium bis(triisopropylcyclopentadienyl)</td>
			<td>Air Liquide</td>
			<td>HyperSr</td>
			<td>Mildly reactive to air and water. Further information supplied by Air Liquide can be found at https://www.airliquide.de/inc/dokument.php/standard/1148/airliquide-hypersr-datasheet.pdf</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Titanium tetraisopropoxide (TTIP)</td>
			<td>Sigma-Aldrich</td>
			<td>87560</td>
			<td>Flammable in liquid and vapor phase</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Ge (001) wafer</td>
			<td>MTI Corporation</td>
			<td>GESBA100D05C1</td>
			<td>4&#34;, single-side polished Sb-doped wafer with &#961; &#8776; 0.04 &#937;-cm</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Argon (UHP)</td>
			<td>Praxair</td>
			<td>N/A</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Deionized Water</td>
			<td>N/A</td>
			<td>N/A</td>
			<td>18.2 M&#937;-cm</td>
		</tr>
	</tbody>
</table>

epitaxial growth of perovskite strontium titanate on germanium via atomic layer deposition

Atomic layer deposition (ALD) is a commercially utilized deposition method for electronic materials. ALD growth of thin films offers thickness control and conformality by taking advantage of self-limiting reactions between vapor-phase precursors and the growing film. Perovskite oxides present potential for next-generation electronic materials, but to-date have mostly been deposited by physical methods. This work outlines a method for depositing SrTiO3 (STO) on germanium using ALD. Germanium has higher carrier mobilities than silicon and therefore offers an alternative semiconductor material with faster device operation. This method takes advantage of the instability of germanium's native oxide by using thermal deoxidation to clean and reconstruct the Ge (001) surface to the 2&#215;1 structure. 2-nm thick, amorphous STO is then deposited by ALD. The STO film is annealed under ultra-high vacuum and crystallizes on the reconstructed Ge surface. Reflection high-energy electron diffraction (RHEED) is used during this annealing step to monitor the STO crystallization. The thin, crystalline layer of STO acts as a template for subsequent growth of STO that is crystalline as-grown, as confirmed by RHEED. In situ X-ray photoelectron spectroscopy is used to verify film stoichiometry before and after the annealing step, as well as after subsequent STO growth. This procedure provides framework for additional perovskite oxides to be deposited on semiconductors via chemical methods in addition to the integration of more sophisticated heterostructures already achievable by physical methods.

На рисунках 5 и 6 показаны спектры фотоэлектронов типичный рентгеновский и ДБЭО изображения из очищенную и раскиленного Ge подложки. Успешно-раскислен Ge субстрат характеризуется &quot;смайлик&quot; 2 × 1 реконструированной картины ДБЭО. 26,39 Кроме тог?...

Watch this Scientific Journal Video about Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition at JoVE.com

Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition

Эта работа подробно описываются процедуры для роста и характеристики кристаллического SrTiO 3 непосредственно на германиевых подложках путем осаждения атомных слоев. Процедура иллюстрирует способность все-химическим методом роста интеграции оксидов на монолитно полупроводников для полупроводниковых приборов металлооксидных.

Эпитаксиального роста перовскита титаната стронция на германии с помощью атомного слоя осаждения

Atomic layer deposition (ALD) is a commercially utilized deposition method for electronic materials. ALD growth of thin films offers thickness control and ...

Research

JoVE Journal

Chemistry

Preparation of Hydrophobic Metal-Organic Frameworks via Plasma Enhanced Chemical Vapor Deposition of Perfluoroalkanes for the Removal of Ammonia

Подготовка гидрофобные Металл-органических структур через плазмостимулированного отложение химического пара перфторалканов для удаления аммиака

Plasma enhanced chemical vapor deposition (PECVD) of perfluoroalkanes has long been studied for tuning the wetting properties of surfaces. For high ...

Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films

Атомно шаблонов, для эпитаксиального роста сложного оксида тонких пленок

Atomically defined substrate surfaces are prerequisite for the epitaxial growth of complex oxide thin films. In this protocol, two approaches to obtain ...

Synthesis and Reaction Chemistry of Nanosize Monosodium Titanate

Синтез и реакции химии наноразмерных Monosodium титаната

This paper describes the synthesis and peroxide-modification of nanosize monosodium titanate (nMST), along with an ion-exchange reaction to load the ...

Layer-by-layer Synthesis and Transfer of Freestanding Conjugated Microporous Polymer Nanomembranes

Слой за слоем Синтез и передачи Корпусная сопряженных микропористых полимерных наномембран

CMP as large surface area materials have attracted growing interest recently, due to their high variability in the incorporation of functional groups in ...

Improved Heterojunction Quality in Cu2O-based Solar Cells Through the Optimization of Atmospheric Pressure Spatial Atomic Layer Deposited Zn1-xMgxO

Improved Heterojunction Quality in Cu2O-based Solar Cells Through the Optimization of Atmospheric Pressure Spatial Atomic Layer Deposited Zn1-xMgxO

Улучшение качества Гетеропереход в Cu<sub&gt; 2</sub&gt; O на основе солнечных батарей за счет оптимизации атмосферного давления пространственного атомного слоя Деп<br /&gt; Zn<sub&gt; 1-х</sub&gt; Mg<sub&gt; х</sub&gt; O

Atmospheric pressure spatial atomic layer deposition (AP-SALD) was used to deposit n-type ZnO and Zn1-xMgxO thin films onto p-type thermally oxidized Cu2O ...

Preparation of Macroporous Epitaxial Quartz Films on Silicon by Chemical Solution Deposition

Подготовка МАКРОПОРИСТОГО эпитаксиальных пленок кварца на кремнии химический раствор осаждения

This work describes the detailed protocol for preparing piezoelectric macroporous epitaxial quartz films on silicon(100) substrates. This is a three-step ...

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

Влияние гибридных методов перовскита на пленке Изготовление формирования, электронная структура и производительность солнечных батарей

Hybrid organic/inorganic halide perovskites have lately been a topic of great interest in the field of solar cell applications, with the potential to ...

Reactive Vapor Deposition of Conjugated Polymer Films on Arbitrary Substrates

Реактивная парофазное осаждение конъюгированных полимерных пленок на произвольные подложках

We demonstrate a method of conformally coating conjugated polymers on arbitrary substrates using a custom-designed, low-pressure reaction chamber. ...

Deposition of Porous Sorbents on Fabric Supports

Осаждения пористых сорбентов на ткани опоры

A microwave deposition technique for silanes, previously described for production of oleophobic fabrics, is adapted to provide a fabric support material ...

Solvothermal Synthesis of MIL-96 and UiO-66-NH2 on Atomic Layer Deposited Metal Oxide Coatings on Fiber Mats

Solvothermal Synthesis of MIL-96 and UiO-66-NH2 on Atomic Layer Deposited Metal Oxide Coatings on Fiber Mats

Solvothermal синтез MIL-96 и UiO-66-NH2 атомного слоя на хранение окиси металла покрытия волокно коврики

Metal-organic frameworks (MOFs), which contain reactive metal clusters and organic ligands allowing for large porosities and surface areas, have proven ...