Name: use of sacrificial nanoparticles to remove the effects of shot-noise in contact holes fabricated by e-beam lithography
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Description: Watch this Scientific Journal Video about Use of Sacrificial Nanoparticles to Remove the Effects of Shot-noise in Contact Holes Fabricated by E-beam Lithography at JoVE.com

英特尔公司通过提供资金资助号414305这项工作中，和俄勒冈纳米技术与微倡议（ONAMI）提供的配套资金。我们非常感谢詹姆斯·布莱克威尔博士在这项工作中的各个阶段的支持和建议。我要特别感谢德鲁Beasau和切尔西本笃分析颗粒定位的统计数据。我们感谢霍尔教授的手稿和库尔特Langworthy博士的仔细阅读，在俄勒冈，尤金的大学，或者，对于他的电子束光刻帮助。

1.衍生和表征硅片的表面<ol><li>清洁用美国无线电公司（RCA）的清洁溶液SC1和SC2的晶片的表面上。 </li><li> 制备SC1和SC2由容积混合下述化学物： SC1：H 2 O 2：NH 4 OH：H 2 O = 1：1：5 V / V和SC2：H 2 O 2：盐酸：H 2 O = 1：1：5 V / V。 <ol><li>沉浸在SC1晶片10分钟，在70℃，然后执行一个去离子水洗涤。 </li><li>遵循SC...

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在光刻中散粒噪声（SN）是在给定的纳米区域到达光子或粒子（N）的数目统计波动的一个简单的后果;它是成反比的一些光子/粒子的平方根： <img alt="公式3" src="/files/ftp_upload/54551/eq3.jpg" />其中A和r是分别的区域和露出区域的大小。例如，当使用在52毫焦/厘米2的曝光剂量的ArF 193纳米（6.4电子伏特）受激准分子激光器，以图案50纳米孔，?...

计算能力的指数增长，由摩尔定律1，2（1）量化，在光学光刻逐步进步的结果。在这种自上而下图案化技术，可实现的分辨率R，是由公知的罗利定理3给出： <img alt="式（1）" src="/files/ftp_upload/54551/eq1.jpg" />这里，λ和NA是光的波长和数值孔径，分别。注意，NA =η·SINθ，其中η是透镜和晶片之间的介质的折射率; θ= TAN-1（D / 1-21）为直径d，透镜和距离，L，透镜和晶片的中心之间。在过去的五十年，光刻分辨率已通过使用（一）光源的改进S，其中包括准分子激光，以逐渐减小UV波长; （二）采用相移掩膜4聪明的光学设计; （三）高NA。在空气中（η= 1）曝光，NA为总是小于单位，但通过引入液体 与η&gt; 1 时 ，诸如水5，透镜和晶片之间，NA可以高于1升高，从而改善浸没式光刻的分辨率。目前可行路径到20纳米节点和超出包括使用多层光致抗蚀剂6，7的复杂双重和四重处理极端紫外光源（λ= 13纳米）或图案化技术。 在纳米尺度，统计的波动，引起的散粒噪声（SN），在lithogra的尺寸的纳米区域原因变化内到达的光子数<html> PHIC模式。这些效果是与暴露于高能量EUV光和E形梁，需要大小更少光子/粒子的订单相比普通光学光刻8系统更加明显。超敏化学放大（具有量子效率&gt; 1）光致抗蚀剂也引入引起的光反应性分子的数量的变化的化学SN暴露纳米区域9,10。需要更长时间的曝光灵敏度降低光致抗蚀剂抑制这些效应，但它们也减少吞吐量。 在分子尺度的贡献到线边缘粗糙度从固有的光致抗蚀剂聚合物中的分子大小分布可通过使用分子抗蚀剂11被降低。即纳米图案化这种自上而下处理互补的方法是使用自下而上的方法12，S =“外部参照”&gt; 13，关于二嵌段聚合物14的定向自组装（DSA），专门依赖。这些方法的指导核和，从而创建所需的图案，如孔或线之间的非均匀间距的能力，仍然具有挑战性。分子成分15的粒度分布，16也限制了规模和制造17，18的产率。类似的问题限制了软刻蚀19纳米微接触印刷。 本文提出了结合静电定向自组装经典的自上而下的投影光刻减少SN /线边缘粗糙度（LER）20效果的新的混合方法（ 图1）的研究。正电上的自组装单层的N（自组装膜）胺基- （2-氨基乙基）-11-氨基十一烷基甲氧基硅烷（AATMS）聚甲基丙烯酸甲酯膜底层被显影后曝光。聚甲基丙烯酸甲酯的带负电荷的光致抗蚀剂膜静电漏斗21带负电荷的金纳米颗粒（的GNP），用柠檬酸盐封端， - 24为SN影响孔25。再流的PMMA光刻胶吞没在薄膜预涂膜纳米颗粒。 <img alt="图1" src="/files/ftp_upload/54551/54551fig1.jpg" /> 图 1： 策略的示意图去除散粒噪声和线边缘粗糙度的影响为利用精确的尺寸的纳米颗粒接触孔图案化。这里，临界尺寸（CD）是孔的所需直径。该方法（步骤1）开始沉积硅烷分子的自组装单层（SAM）的轴承正电的胺基上的氧化冲浪硅晶片的王牌。接着，电子束光刻来图案的孔（步骤2和3）中的PMMA光刻胶膜，蓝色层，其产生的散粒噪声，如插图SEM图像中示出。光刻在孔的底部暴露胺基。步骤4嗣继承受控尺寸，柠檬酸盐封端（带负电）的金纳米颗粒（的GNP）在采用静电漏斗（EF）光刻图案化孔的水相沉积。在步骤5中，将晶片加热至100℃，低于PMMA，110℃的玻璃化转变温度，使周围的预沉积的纳米颗粒的光致抗蚀剂的回流。蚀刻覆盖的PMMA与暴露的粒子的氧等离子体（步骤6）公开的GNP，和随后的湿法蚀刻（碘）（步骤7）产生对应于所述的GNP的大小的孔。当与反应离子/湿蚀刻耦合，有可能在孔图案中的光致抗蚀剂转移到的 SiO 2（步骤8）31。回覆印有许可参考20。 <a href="http://ecsource.jove.com/files/ftp_upload/54551/54551fig1large.jpg" target="_blank">请点击此处查看该图的放大版本。</a> 在基板上的带相反电荷的GNP和胺基之间的静电相互作用防止在结合位点的的GNP的位移。回流步骤保持的GNP的相对位置，但擦除孔和SN / LER的影响。等离子/湿蚀刻步骤重新生成具有国民生产总值的大小的孔。反应性离子蚀刻传送他们的 SiO 2硬掩模层的图案。该方法依赖于使用更均匀尺寸的纳米颗粒比的图案化纳米孔（NH），表示为标准偏差，σ，使得σ 生产总值 &lt;σNH。本报告重点关注（ 图1描述了4和5）步骤，涉及纳米粒子的分散性，从和沉积他们周围的光致抗蚀剂的回流，以评估的优点，并且该方法的局限性。这两个步骤是，原则上可扩展到更大尺寸的基板，无需广泛在芯片上制造现代集成电路的电流流动的修饰。

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			<td height="21" style="height:21px;width:373px;">AATMS (95%)</td>
			<td style="width:71px;">Gelest Inc.</td>
			<td style="width:89px;">SIA0595.0</td>
			<td style="width:167px;">N-(2-aminoethyl)-11-aminoundecyltrimethoxysilane&#160;</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Gold colloids (Ted Pella Inc.)</td>
			<td style="width:71px;">Ted Pella</td>
			<td style="width:89px;">15705-20</td>
			<td>Gold Naoparticles</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;">hydrogen peroxide</td>
			<td style="width:71px;">Fisher Scientific&#160;</td>
			<td style="width:89px;">H325-100</td>
			<td>Analytical grade (Used to clean wafer)</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:373px;">hydrochloric acid</td>
			<td style="width:71px;">Fisher Scientific&#160;</td>
			<td style="width:89px;">S25358</td>
			<td>Analytical grade</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;">Ammonium hydroxide</td>
			<td style="width:71px;">Fisher Scientific&#160;</td>
			<td style="width:89px;">A669S-500SDS</td>
			<td>Analytical grade (Used to clean wafer)</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;">hydrogen fluoride</td>
			<td style="width:71px;">Fisher Scientific&#160;</td>
			<td style="width:89px;">AC277250250</td>
			<td>Analytical grade(used to etch SiO2)</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;">Toluene (anhydrous, 99.8 %)&#160;</td>
			<td style="width:71px;">Sigma Aldrich</td>
			<td style="width:89px;">244511</td>
			<td>Analytical grade (solvent used in Self Assembly of AATMS</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;">&#160;Isopropyl alcohol (IPA)</td>
			<td style="width:71px;">Sigma Aldrich</td>
			<td style="width:89px;">W292907</td>
			<td>Analytical grade (Used to make developer)</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;">Methyl butyl ketone (MIBK)</td>
			<td style="width:71px;">Sigma Aldrich</td>
			<td style="width:89px;">29261</td>
			<td>Analytical grade(used to make developer)</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;">1:3 MIBK:IPA developer</td>
			<td style="width:71px;">Sigma Aldrich</td>
			<td style="width:89px;"></td>
			<td>Analytical grade (Developer)</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;">950 k poly(methyl methacylate (PMMA, 4 % in Anisole)</td>
			<td style="width:71px;">Sigma Aldrich</td>
			<td style="width:89px;">182265</td>
			<td>Photoresist for E-beam lithography</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:373px;">Purified Water : Barnstead Sybron Corporation water purification Unit, resistivity of 19.0 M&#937;cm</td>
			<td style="width:71px;"></td>
			<td style="width:89px;"></td>
			<td>Water for substrate cleaning</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Gaertner ellipsometer&#160;</td>
			<td>Gaertner</td>
			<td></td>
			<td>Resist and SAM thickness measurements</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:373px;">XPS, ThermoScientifc ESCALAB 250 instrument</td>
			<td style="width:71px;">Thermo-Scientific</td>
			<td style="width:89px;"></td>
			<td>Surface composition</td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:373px;">An FEI Siron XL30</td>
			<td style="width:71px;">Fei Corporation</td>
			<td style="width:89px;"></td>
			<td>Characterize nanopatterns</td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;">Zeiss sigma VP FEG SEM</td>
			<td style="width:71px;">Zeiss Corporation</td>
			<td style="width:89px;"></td>
			<td>E-beam exposure and patterning</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">MDS 100&#160; CCD camera</td>
			<td style="width:71px;">Kodak</td>
			<td style="width:89px;"></td>
			<td>Imaging drop shapes for contact angle measurements</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:373px;">Tegal Plasmod</td>
			<td style="width:71px;">Tegal</td>
			<td style="width:89px;"></td>
			<td>Oxygen plasma to etch photoresist</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:373px;">I2</td>
			<td style="width:71px;">Sigma Aldrich</td>
			<td style="width:89px;">451045</td>
			<td>Components for gold etch solution</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:373px;">KI</td>
			<td style="width:71px;">Sigma Aldrich</td>
			<td style="width:89px;">746428</td>
			<td>Components for gold etch solution</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Ellipsometer ( LSE Stokes model L116A);</td>
			<td style="width:71px;">Gaertner</td>
			<td style="width:89px;">L116A</td>
			<td>AATMS self assembled monolayer film thickness measurements</td>
		</tr>
	</tbody>
</table>

use of sacrificial nanoparticles to remove the effects of shot-noise in contact holes fabricated by e-beam lithography

纳米图案制造极端紫外线（EUV）或电子束（电子束）的大小光刻出现意外变化。此变化被归因于统计波动在到达从散粒噪声（SN）所产生的一个给定的纳米区域光子/电子的数量。的SN成反比到光子数/电子的平方根。对于一个固定的剂量，对SN是在EUV和电子束光刻技术比传统的（193纳米）光学光刻大。自下而上和自上而下的图案形成的方法组合以最小化散粒噪声的纳米孔图案化的影响。具体地说，在硅晶片上的氨基硅烷的表面活性剂自组装，其随后旋涂有PMMA基电子束光致抗蚀剂的100纳米薄膜。暴露于电子束和随后发展露出下面的表面活性剂膜在孔的底部。将晶片浸入在悬浮液中的带负电荷的，柠檬酸盐封端的，为20nm克老纳米颗粒（GNP）存款每穴一个粒子。在孔露出的带正电荷的表面活性剂膜静电漏斗带负电的纳米粒子的露出孔，其永久地固定的位置登记的中心。接着，通过光致抗蚀剂聚合物的玻璃化转变温度附近加热，光致抗蚀剂膜重排和吞噬纳米颗粒。这个过程将删除受SN孔而是通过强烈的静电结合叶锁定到位沉积的GNP。用氧等离子体处理通过蚀刻光致抗蚀剂的薄层暴露的GNP。湿蚀刻露出的GNP与I 2的溶液/ KI产生位于由电子束光刻图案化的凹槽的中心一致的孔。实验提出表明，该方法减少了在从35％造成的SN至10％以下的孔的尺寸的变化。该方法扩展了晶体管的接触孔的图案形成限制到低于20纳米。

图2示出了沉积在通过静电漏斗驱动的60-100纳米厚的PMMA膜图案80纳米直径的孔20纳米的GNP的SEM图像。正如其他22观察，这个过程导致每穴约一个粒子。颗粒周围的孔的中心的分布为高斯（右上插图）。大多数孔（93％）包含在一个生产总值，并且这些颗粒的95％的中心为20nm内发生。进一步的优化，在其他地方所讨论的，需要改善填充馏分和的GNP...

Watch this Scientific Journal Video about Use of Sacrificial Nanoparticles to Remove the Effects of Shot-noise in Contact Holes Fabricated by E-beam Lithography at JoVE.com

Use of Sacrificial Nanoparticles to Remove the Effects of Shot-noise in Contact Holes Fabricated by E-beam Lithography

均匀尺寸的纳米颗粒可以除去在有机玻璃图案化的接触孔尺寸（PMMA）光致抗蚀剂膜通过电子束（E-束）光刻波动。该方法包括静电漏斗中的接触孔中心并沉积的纳米颗粒，随后光致抗蚀剂回流和等离子体和湿法蚀刻步骤。

牺牲纳米颗粒使用删除散粒噪声的影响通过电子束光刻装配式接触孔

Nano-patterns fabricated with extreme ultraviolet (EUV) or electron-beam (E-beam) lithography exhibit unexpected variations in size. This variation has ...

Research

JoVE Journal

Engineering

Micropunching Lithography for Generating Micro- and Submicron-patterns on Polymer Substrates

Micropunching为微型和亚微米模式聚合物基板上生成的光刻

Conducting polymers have attracted great attention since the discovery of high conductivity in doped polyacetylene in 19771. They offer the advantages of ...

科研

工程学

Optical Trapping of Nanoparticles

纳米粒子的光学捕获

Optical trapping is a technique for immobilizing and manipulating small objects in a gentle way using light, and it has been widely applied in trapping ...

Process of Making Three-dimensional Microstructures using Vaporization of a Sacrificial Component

制作三维微结构，用牺牲部分汽化过程

Vascular structures in natural systems are able to provide high mass transport through high surface areas and optimized structure. Few synthetic material ...

Analysis of Contact Interfaces for Single GaN Nanowire Devices

单氮化镓纳米线设备分析接触界面

Single GaN nanowire (NW) devices fabricated on SiO2 can exhibit  a strong degradation after annealing due to the  occurrence of void formation at the ...

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures1. MLCD results in the formation of highly controlled, ultra ...

Analyzing the Movement of the Nauplius 'Artemia salina' by Optical Tracking of Plasmonic Nanoparticles

Analyzing the Movement of the Nauplius 'Artemia salina' by Optical Tracking of Plasmonic Nanoparticles

分析无节幼体的运动“<em&gt;卤虫</em&gt;&#39;由电浆纳米粒子的光学跟踪

We demonstrate how optical tweezers may provide a sensitive tool to analyze the fluidic vibrations generated by the movement of small aquatic organisms. A ...

Surface Enhanced Raman Spectroscopy Detection of Biomolecules Using EBL Fabricated Nanostructured Substrates

表面增强拉曼光谱检测生物分子利用EBL装配纳米衬底

Fabrication and characterization of conjugate nano-biological systems interfacing metallic nanostructures on solid supports with immobilized biomolecules ...

Electroactive Polymer Nanoparticles Exhibiting Photothermal Properties

电活性聚合物纳米粒子参展光热特性

A method for the synthesis of electroactive polymers is demonstrated, starting with the synthesis of extended conjugation monomers using a three-step ...

Scanning SQUID Study of Vortex Manipulation by Local Contact

由当地接触式扫描涡操纵SQUID研究

Local, deterministic manipulation of individual vortices in type 2 superconductors is challenging. The ability to control the position of individual ...

In Situ Synthesis of Gold Nanoparticles without Aggregation in the Interlayer Space of Layered Titanate Transparent Films

In Situ Synthesis of Gold Nanoparticles without Aggregation in the Interlayer Space of Layered Titanate Transparent Films

在没有聚集的层状钛酸盐薄膜透明的层间金纳米粒子的原位合成

Combinations of metal oxide semiconductors and gold nanoparticles (AuNPs) have been investigated as new types of materials. The in situ synthesis of AuNPs ...