Name: effect of bending on the electrical characteristics of flexible organic single crystal-based field-effect transistors
Uploaded: 2016-11-07T14:00:00
Description: Watch this Scientific Journal Video about Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors at JoVE.com

This work was supported by the Ministry of Science and Technology, Taiwan, Republic of China through Grant No. 101-2113-M-001-006-MY3.

1. TCDAP 12制备<ol><li>通过以下文献方法13合成TCDAP。 </li><li>由温度梯度升华法纯化TCDAP产物，用设定在340，270中的三个温度区，和250℃，分别10 -6乇12,14的真空压力下。 </li></ol> 2.成长TCDAP使用物理气相传输（PVT）系统14的单晶<ol><li>把TCDAP样品在船（5厘米长）的一端和船形加载到玻璃内管（长度为15厘米直径为1.2厘米）。 </li><li>加载内管?...

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	<li>Sekitani, T., Zschieschang, U., Klauk, H., Someya, T. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Flexible+Organic+Transistors+and+Circuits+with+Extreme+Bending+Stability.">Flexible Organic Transistors and Circuits with Extreme Bending Stability.</a> Nat. Mater. 9, 1015-1022 (2010).</li><li>Yang, Y., Ruan, G., Xiang, C., Wang, G., Tour, J. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Flexible+Three-Dimensional+Nanoporous+Metal-Based+Energy+Devices.">Flexible Three-Dimensional Nanoporous Metal-Based Energy Devices.</a> J. Am. Chem. Soc. 136, 6187-6190 (2014).</li><li>Zhan, Y., Mei, Y., Zheng, L. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Materials+Capability+and+Device+Performance+in+Flexible+Electronics+for+the+Internet+of+Things.">Materials Capability and Device Performance in Flexible Electronics for the Internet of Things.</a> J. Mater. Chem. C. 2, 1220-1232 (2014).</li><li>Zhang, L., Wang, H., Zhao, Y., Guo, Y., Hu, W., Yu, G., Liu, Y. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Substrate-Free+Ultra-Flexible+Organic+Field-Effect+Transistors+and+Five-Stage+Ring+Oscillators.">Substrate-Free Ultra-Flexible Organic Field-Effect Transistors and Five-Stage Ring Oscillators.</a> Adv. Mater. 25, 5455-5460 (2013).</li><li>Jedaa, A., Halik, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Toward+Strain+Resistant+Flexible+Organic+Thin+Film+Transistors.">Toward Strain Resistant Flexible Organic Thin Film Transistors.</a> Appl. Phys. Lett. 95, (2009).</li><li>Nomura, K., Ohta, H., Takagi, A., Kamiya, T., Hirano, M., Hosono, H. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Room-Temperature+Fabrication+of+Transparent+Flexible+Thin-Film+Transistors+Using+Amorphous+Oxide+Semiconductors.">Room-Temperature Fabrication of Transparent Flexible Thin-Film Transistors Using Amorphous Oxide Semiconductors.</a> Nature. 432, 488-492 (2004).</li><li>Sekitani, T., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Bending+Experiment+on+Pentacene+Field-Effect+Transistors+on+Plastic+Films.">Bending Experiment on Pentacene Field-Effect Transistors on Plastic Films.</a> Appl. Phys. Lett. 86, 073511 (2005).</li><li>Tseng, C. -. W., Huang, D. -. C., Tao, Y. -. T. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Organic+Transistor+Memory+with+a+Charge+Storage+Molecular+Double-Floating-Gate+Monolayer.">Organic Transistor Memory with a Charge Storage Molecular Double-Floating-Gate Monolayer.</a> ACS Appl. Mater. Interfaces. 7, 9767-9775 (2015).</li><li>Coropceanu, V., Cornil, J., da Silva Filjo, D. A., Olivier, Y., Silbey, R., Bredas, J. L. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Charge+Transport+in+Organic+Semiconductors.">Charge Transport in Organic Semiconductors.</a> Chem. Rev. 107, 926-952 (2007).</li><li>Briseno, A. L., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=High-Performance+Organic+Single-Crystal+Transistors+on+Flexible+Substrates.">High-Performance Organic Single-Crystal Transistors on Flexible Substrates.</a> Adv. Mater. 18, 2320-2324 (2006).</li><li>Tang, Q., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Organic+Nanowire+Crystals+Combing+Excellent+Device+Performance+and+Mechanical+Flexibility.">Organic Nanowire Crystals Combing Excellent Device Performance and Mechanical Flexibility.</a> Small. 7, 189-193 (2011).</li><li>Islam, M. M., Pola, S., Tao, Y. -. T. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=High+Mobility+N-Channel+Single-Crystal+Field-Effect+Transistors+Based+on+5,7,12,14-Tetrachloro-6,13-Diazapentacene.">High Mobility N-Channel Single-Crystal Field-Effect Transistors Based on 5,7,12,14-Tetrachloro-6,13-Diazapentacene.</a> Chem. Commun. 47, 6356-6358 (2011).</li><li>Weng, S. Z., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Diazapentacene+Derivatives+as+Thin-Film+Transistor+Materials:+Morphology+Control+in+Realizing+High-Field-Effect+Mobility.">Diazapentacene Derivatives as Thin-Film Transistor Materials: Morphology Control in Realizing High-Field-Effect Mobility.</a> ACS Appl. Mater. Interfaces. 1, 2071-2079 (2009).</li><li>Kloc, C., Simpkins, P. G., Siegrist, T., Laudise, R. A. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Physical+Vapor+Growth+of+Centimeter-Sized+Crystals+of+&#913;-Hexathiophene.">Physical Vapor Growth of Centimeter-Sized Crystals of &#913;-Hexathiophene.</a> J. Cryst. Growth. 182, 416-427 (1997).</li></ol>

在本实验中，许多参数影响的场效应迁移率的成功测量。首先，在单晶应该足够大，要制造成用于特性测量的场效应装置。物理气相转移（PVT）的方法是一个允许更大的晶体生长。通过调节温度和载气的流量，尺寸的晶体最多能够获得半厘米。其次，单晶的选择是重要的。一个明显的单晶可以包含晶体包和弯曲可能导致束拆解。因此，更薄的晶体是优选的。第三，增加了一倍双面胶带必须保持在?...

软的电子设备，诸如传感器，显示器和耐磨电子，目前正在设计和研究更积极地，许多甚至已在市场近年来1,2,3,4发射。有机半导体材料发挥这些电子设备的一个重要的作用，由于其固有的优点，包括低开发成本，以便在溶液中或在低温下制备的能力，并且，特别是它们的灵活性时相比无机半导体5,6。对于这些电子的一个特别的考虑是，它们将受到频繁的弯曲。弯曲介绍的部件和在装置内的材料应变。因为这样的设备弯曲需要一个稳定和一致的性能。晶体管是大多数电子产品的重要组成部分，其下的弯曲性能感兴趣。许多研究已通过弯曲的有机牛逼解决了这一性能问题欣薄膜晶体管7,8。而在弯曲的电导的变化可以归因于在多晶薄膜中的变化中，晶粒之间的间距，更根本的问题是是否电导可以在弯曲的单晶内变化。它被广泛接受该有机分子之间的电荷传输强烈地依赖于分子和所涉及的中性和带电状态9之间的相互转换的重组能之间的电子耦合。电子耦合是邻近的分子之间和前沿分子轨道的重叠的距离高度敏感。良好有序晶体的弯曲引入应变，并且可以改变分子的晶体内的相对位置。这可以用一个单一的基于晶体的场效应晶体管进行测试。一报告中所使用的柔性基板上的红荧烯单晶在弯曲10，研究晶体厚度的效果。德与平的基底上制备的铜酞菁纳米线晶体虎钳被示出在弯曲11具有更高的迁移率。然而，对于一个FET器件弯曲不同方向的性质没有被探讨。 分子5,7,12,16四氯6,13- diazapentacene（TCDAP）是n型半导体材料12。 TCDAP的晶体具有在3.911埃的细胞长度沿着单元电池的一个轴相邻分子之间偏移的π-π堆叠单斜填料序。水晶沿着这个方向包装增长给长针。沿此方向测得的最大的n型场效应迁移达33.9 平方厘米/ V·秒。不像是脆而易碎许多有机晶体，TCDAP晶体被发现是高度灵活的。在这项工作中，我们使用TCDAP作为导电通道和制备在柔性底物邻单晶场效应晶体管˚F聚对苯二甲酸乙酯（PET）。迁移率测量为一个平的基底上的晶体，与设备弯曲朝向所述柔性基板（向下）或者朝着栅极/介电侧（向上）弯曲。依据相邻之间在堆叠/耦合距离的变化分析了IV数据分子。

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effect of bending on the electrical characteristics of flexible organic single crystal-based field-effect transistors

在有机半导体的电荷输送高度取决于晶体，这极大地影响了电子耦合在分子包装。然而，在软电子，其中有机半导体发挥关键作用，该装置将被弯曲或反复折叠。在晶体堆积，从而电荷输送弯曲的效果是该装置的性能是至关重要的。在这个手稿，我们描述了协议弯曲的场效应晶体管构造5,7,12,16四氯6,13-​​ diazapentacene（TCDAP）的单晶并在弯曲的晶体，以获得可再现的IV特性。结果表明，弯曲在挠性基板导致在电荷迁移率几乎可逆但相反的趋势制备的场效应晶体管，取决于弯曲方向。当该装置被朝向顶部栅极/介电层（向上，压缩状态）弯曲，并是当降低移动性的增加NT朝晶体/基板侧（向下，拉伸状态）。弯曲曲率的影响还观察，从更高的弯曲曲率所得更大的流动性的变化。有人建议，在弯曲时，从而影响电子耦合和随后的载流子传输能力的分子间π-π距离变化。

单晶X射线衍射分析表明，TCDAP是一个扩展的π系统，分子沿一个轴的图填料。图2表示通过粉末XRD对TCDAP晶体的扫描模式。一系列尖锐的峰被观测到，对应只对家族的（0，K，ℓ）面，由与晶体的粉末衍射图案进行比较。这意味着， 如图晶体结构取向。 3。 弯...

Watch this Scientific Journal Video about Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors at JoVE.com

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

该原稿描述了一种有机单基于晶体的场效应晶体管，以保持对电子特性测量一个运作装置的弯曲加工。结果表明，在晶体中的分子间距，从而在电荷跳频速率，这是在柔性电子重要弯曲原因的变化。

弯曲对基于晶体的柔性有机单场效应晶体管的电气特性的影响

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