Lavtryk damp-assisteret løsningsprocessen for afstemmelige Band Gap Pinhole-fri Methylammonium bly Halogenid Perovskite film
September 8th, 2017
•Carolin M. Sutter-Fella1,2,3*, Yanbo Li1,4*, Nicola Cefarin1,5,6, Aya Buckley1,7, Quynh Phuong Ngo8,9, Ali Javey2,3, Ian D. Sharp1, Francesca M. Toma1
1Joint Center for Artificial Photosynthesis, Chemical Sciences Division, Lawrence Berkeley National Laboratory, 2Electrical Engineering and Computer Sciences, University of California, Berkeley, 3Materials Science Division, Lawrence Berkeley National Laboratory, 4Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, 5Department of Physics, Graduate School of Nanotechnology, University of Trieste, 6TASC Laboratory, IOM-CNR - Istituto Officina dei Materiali, 7Department of Chemistry, University of California, Berkeley, 8Materials Science and Engineering, University of California, Berkeley, 9Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory
Vi præsenterer her, en protokol til syntese af CH3NH3jeg og CH3NH3Br prækursorer og efterfølgende dannelse af pinhole-fri, vedvarende CH3NH3PbI3-xBrx tynde film for den anvendelse i høj effektivitet solceller og andre optoelektroniske enheder.
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