Lagedruk Vapor-bijgewoonde oplossingsproces voor afstembare Band Gap Pinhole-vrije Methylammonium lood halogenide perovskiet Films
September 8th, 2017
•Carolin M. Sutter-Fella1,2,3*, Yanbo Li1,4*, Nicola Cefarin1,5,6, Aya Buckley1,7, Quynh Phuong Ngo8,9, Ali Javey2,3, Ian D. Sharp1, Francesca M. Toma1
1Joint Center for Artificial Photosynthesis, Chemical Sciences Division, Lawrence Berkeley National Laboratory, 2Electrical Engineering and Computer Sciences, University of California, Berkeley, 3Materials Science Division, Lawrence Berkeley National Laboratory, 4Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, 5Department of Physics, Graduate School of Nanotechnology, University of Trieste, 6TASC Laboratory, IOM-CNR - Istituto Officina dei Materiali, 7Department of Chemistry, University of California, Berkeley, 8Materials Science and Engineering, University of California, Berkeley, 9Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory
Hier presenteren we een protocol voor de synthese van33NH CH I en CH3NH3Br precursoren en de daaropvolgende vorming van pinhole-vrije, continue CH3NH3PbI3-xBrx dunne lagen voor de toepassing in hoge efficiëntie zonnecellen en andere opto-elektronische apparaten.
ABOUT JoVE
Copyright © 2024 MyJoVE Corporation. All rights reserved