Processus de Solution assistée par vapeur basse pression pour bande accordable Gap sténopé méthylammonium plomb halogénure Perovskite Films
September 8th, 2017
•Carolin M. Sutter-Fella1,2,3*, Yanbo Li1,4*, Nicola Cefarin1,5,6, Aya Buckley1,7, Quynh Phuong Ngo8,9, Ali Javey2,3, Ian D. Sharp1, Francesca M. Toma1
1Joint Center for Artificial Photosynthesis, Chemical Sciences Division, Lawrence Berkeley National Laboratory, 2Electrical Engineering and Computer Sciences, University of California, Berkeley, 3Materials Science Division, Lawrence Berkeley National Laboratory, 4Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, 5Department of Physics, Graduate School of Nanotechnology, University of Trieste, 6TASC Laboratory, IOM-CNR - Istituto Officina dei Materiali, 7Department of Chemistry, University of California, Berkeley, 8Materials Science and Engineering, University of California, Berkeley, 9Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory
Nous présentons ici un protocole pour la synthèse de CH3NH3I et précurseurs de Br3CH3NH et la formation subséquente de continu, pinhole-free CH3NH3IBP3-xBrx minces pour la application dans les cellules solaires à haut rendement et autres dispositifs optoélectroniques.
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